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121. 发明授权

US06586121B2 Spin-valve thin-film magnetic element 有权
公开(公告)号：US06586121B2
公开(公告)日：2003-07-01
申请号：US09862738
申请日：2001-05-22
申请人： Yosuke Ide , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Kenichi Tanaka , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F41/325 , Y10S428/90 , Y10T428/1129 , Y10T428/1186 , Y10T428/12438 , Y10T428/12465 , Y10T428/12542 , Y10T428/12576 , Y10T428/1259 , Y10T428/12611 , Y10T428/1266 , Y10T428/12674 , Y10T428/12806 , Y10T428/12875 , Y10T428/12931
摘要： A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization direction of the free magnetic layer being aligned in a direction perpendicular to the magnetization direction of the pinned magnetic layer; and a back layer composed of a nonmagnetic conductive material formed in contact with the free magnetic layer at the opposite side of the nonmagnetic conductive layer. The back layer is composed of at least one metal selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Os, and Cr.

122. 发明授权

US08476899B2 Magnetic sensor and magnetic balance type current sensor including the same 有权
标题翻译：磁传感器和磁平衡式电流传感器包括相同的
公开(公告)号：US08476899B2
公开(公告)日：2013-07-02
申请号：US13038307
申请日：2011-03-01
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Kenji Ichinohe , Yoshihiro Nishiyama
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Kenji Ichinohe , Yoshihiro Nishiyama
IPC分类号： G01R33/09
CPC分类号： H01L43/08 , G01R15/205 , G01R15/207 , G01R33/091
摘要： A magnetic sensor includes a magnetoresistance effect element and a hard bias layer. The magnetoresistance effect element is configured to have a striped form which has a sensitivity axis in a predetermined direction, and configured to have a structure in which a free magnetic layer, in which magnetization varies with respect to an external magnetic field, a non-magnetic layer, and a fixed magnetic layer, in which the magnetization is fixed, are laminated. The hard bias layer is disposed in a longitudinal direction of the striped form, disposed outside of the magnetoresistance effect element to be separated from the magnetoresistance effect element.
摘要翻译：磁传感器包括磁阻效应元件和硬偏置层。磁阻效应元件被配置为具有沿预定方向具有灵敏度轴的条纹形状，并且被配置为具有其中磁化相对于外部磁场变化的自由磁性层，非磁性的结构层和固定磁化层的固定磁性层。硬偏置层设置在带状形式的纵向方向上，设置在磁阻效应元件的外侧以与磁阻效应元件分离。

123. 发明授权

US08952689B2 Magnetic sensor and magnetic balance type current sensor utilizing same 有权
标题翻译：磁传感器和磁平衡式电流传感器
公开(公告)号：US08952689B2
公开(公告)日：2015-02-10
申请号：US13607467
申请日：2012-09-07
申请人： Yosuke Ide , Masamichi Saito
发明人： Yosuke Ide , Masamichi Saito
IPC分类号： G01R33/09 , B82Y25/00 , G01R15/20
CPC分类号： G01R33/093 , B82Y25/00 , G01R15/205
摘要： A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero.
摘要翻译：磁传感器包括磁阻元件，其电阻由于施加来自被测量电流的感应磁场而变化，以及固定电阻元件。固定电阻元件具有自固定的铁磁性固定层，其包括第一铁磁性膜和第二铁磁膜，其与反并联耦合并且其间插入反平行耦合膜。反平行耦合膜是具有第一峰值厚度的反铁磁耦合效应的钌膜。第一铁磁膜和第二铁磁膜的磁化强度之间的差异实质上为零。

124. 发明授权

US08487612B2 Current sensor 有权
标题翻译：电流传感器
公开(公告)号：US08487612B2
公开(公告)日：2013-07-16
申请号：US13038312
申请日：2011-03-01
申请人： Kenji Ichinohe , Masamichi Saito , Akira Takahashi , Yosuke Ide
发明人： Kenji Ichinohe , Masamichi Saito , Akira Takahashi , Yosuke Ide
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R15/205 , G01R19/0092
摘要： A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point.
摘要翻译：一种电流传感器，包括磁检测桥电路，其由具有通过施加来自待测电流的感应磁场而变化的电阻值的四个磁阻效应元件构成，并且具有两个磁阻效应元件之间的输出。四个磁阻效应元件具有相同的电阻变化率，并且包括通过其间的反平行耦合膜将第一铁磁膜和第二铁磁膜反铁磁耦合形成的自固定型铁磁性固定层，非磁性中间层和软磁性层。提供输出的两个磁阻效应元件的铁磁固定层的磁化方向彼此相差180°。磁检测桥电路具有与电源点对称的布线。

125. 发明授权

US07268978B2 Self-pinned magnetic detecting element 有权
标题翻译：自锁磁检测元件
公开(公告)号：US07268978B2
公开(公告)日：2007-09-11
申请号：US11156980
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer is disposed between nonmagnetic metal magnetostriction-enhancing layers. CPP magnetic detecting elements allow this structure without degrading the GMR effect. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below to produce an appropriate magnetoelasticity. Consequently, the magnetization of the pinned magnetic layer can be more firmly fixed.
摘要翻译：一种CPP磁检测元件，其具有以CIP磁检测元件不允许的结构的磁化被其单轴各向异性固定的钉扎磁性层。在CPP磁检测元件中，被钉扎的磁性层的上表面和下表面设置在非磁性金属磁致伸缩增强层之间。 CPP磁检测元件允许这种结构而不降低GMR效应。因此，可以从上方和下方增加钉扎磁性层的磁致伸缩系数，以产生适当的磁弹性。因此，可以更牢固地固定被钉扎的磁性层的磁化。

126. 发明授权

US07106559B2 Exchange coupling film and magnetoresistive element using the same 有权
标题翻译：交换耦合膜和使用其的磁阻元件
公开(公告)号：US07106559B2
公开(公告)日：2006-09-12
申请号：US11208368
申请日：2005-08-17
申请人： Naoya Hasegawa , Masamichi Saito
发明人： Naoya Hasegawa , Masamichi Saito
IPC分类号： G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/325 , Y10T428/11 , Y10T428/1107 , Y10T428/1143 , Y10T428/12465 , Y10T428/12826 , Y10T428/12854 , Y10T428/265 , Y10T428/32
摘要： An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.
摘要翻译：提供了包括与反铁磁层接触的反铁磁层和铁磁层以产生交换耦合磁场的交换耦合膜。使用PtMn合金作为反铁磁层的材料。反铁磁性层和铁磁性层平行于界面优先取向的晶面是晶体学上相同的，位于这些晶面的晶体学相同的轴至少部分地在反铁磁层和铁磁层之间的不同方向上取向。因此，作为热处理的结果，在反铁磁性层中发生适当的顺序变换，并且可以获得增加的交换耦合磁场。

127. 发明申请

US20060023374A1 Exchange coupling film and magnetoresistive element using the same 有权
公开(公告)号：US20060023374A1
公开(公告)日：2006-02-02
申请号：US11208368
申请日：2005-08-17
申请人： Naoya Hasegawa , Masamichi Saito
发明人： Naoya Hasegawa , Masamichi Saito
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/325 , Y10T428/11 , Y10T428/1107 , Y10T428/1143 , Y10T428/12465 , Y10T428/12826 , Y10T428/12854 , Y10T428/265 , Y10T428/32
摘要： An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

128. 发明申请

US20050280956A1 Exchange coupling film and magnetoresistive element using the same 有权
标题翻译：交换耦合膜和使用其的磁阻元件
公开(公告)号：US20050280956A1
公开(公告)日：2005-12-22
申请号：US11207702
申请日：2005-08-17
申请人： Naoya Hasegawa , Masamichi Saito
发明人： Naoya Hasegawa , Masamichi Saito
IPC分类号： G01R33/09 , G11B5/39 , H01F10/12 , H01F10/30 , H01F10/32 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/325 , Y10T428/11 , Y10T428/1107 , Y10T428/1143 , Y10T428/12465 , Y10T428/12826 , Y10T428/12854 , Y10T428/265 , Y10T428/32
摘要： An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.
摘要翻译：提供了包括与反铁磁层接触的反铁磁层和铁磁层以产生交换耦合磁场的交换耦合膜。使用PtMn合金作为反铁磁层的材料。反铁磁性层和铁磁性层平行于界面优先取向的晶面是晶体学上相同的，位于这些晶面的晶体学相同的轴至少部分地在反铁磁层和铁磁层之间的不同方向上取向。因此，作为热处理的结果，在反铁磁性层中发生适当的顺序变换，并且可以获得增加的交换耦合磁场。

129. 发明授权

US06628483B1 Dual spin-valve magnetoresistive thin film element 有权
标题翻译：双自旋阀磁阻薄膜元件
公开(公告)号：US06628483B1
公开(公告)日：2003-09-30
申请号：US10346768
申请日：2003-01-17
申请人： Masamichi Saito , Naoya Hasegawa
发明人： Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3951 , G11B2005/3996 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49055 , Y10T29/49067
摘要： A dual spin-valve magnetoresistive thin film element includes a free magnetic layer, first and second nonmagnetic electrically conductive layers residing below and above the composite free magnetic layer, respectively, first and second dual pinned magnetic layers each having first and second pinned magnetic layers, and first and second antiferromagnetic layers. In the first dual pinned magnetic layer, the first pinned magnetic layer of contacts the first antiferromagnetic layer and the second pinned magnetic layer contacts the first nonmagnetic electrically conductive layer. In the second dual pinned magnetic layer, the first pinned magnetic layer of contacts the second antiferromagnetic layer and the second pinned magnetic layer contacts the second nonmagnetic electrically conductive layer, and the magnetic moment of the first pinned magnetic layer is greater than the second pinned magnetic layer.
摘要翻译：双自旋阀磁阻薄膜元件包括分别位于复合自由磁性层下方和上方的自由磁性层，第一和第二非磁性导电层，分别具有第一和第二固定磁性层的第一和第二双重固定磁性层，以及第一和第二反铁磁层。在第一双引脚磁性层中，与第一反铁磁层接触的第一固定磁性层和第二固定磁性层接触第一非磁性导电层。在第二双钉扎磁性层中，与第二反铁磁层接触的第一固定磁性层与第二非磁性导电层接触，第一固定磁性层的磁矩大于第二固定磁性层层。

130. 发明授权

US06496338B2 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias 失效
标题翻译：旋转阀磁阻传感器包括用于增加矫顽力的第一反铁磁层和用于施加纵向偏压的第二反铁磁层
公开(公告)号：US06496338B2
公开(公告)日：2002-12-17
申请号：US09891327
申请日：2001-06-25
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , H01L43/12
摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.
摘要翻译：本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。

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