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121. 发明申请

US20110239038A1 MANAGEMENT APPARATUS, MANAGEMENT METHOD, AND PROGRAM 审中-公开
标题翻译：管理设备，管理方法和程序
公开(公告)号：US20110239038A1
公开(公告)日：2011-09-29
申请号：US13132243
申请日：2009-01-06
申请人： Takayuki Ito
发明人： Takayuki Ito
IPC分类号： G06F11/20
CPC分类号： G06F11/203 , G06F9/45558 , G06F9/485 , G06F11/1484 , G06F11/2028 , G06F2009/4557
摘要： When a fault occurs in a guest machine 2b of a virtual machine system 100b, a stop control part 5a of a guest machine 2a of a virtual machine system 100a requests a stop control part 4b of a host machine 1b to stop operation of the guest machine 2b. If the guest machine 2b does not stop operation normally, the stop control part 5a requests a BMC 8b to stop operation of the host machine 1b. The BMC 8b stops the host machine 1b, so that the machine where the fault occurs can be stopped.
摘要翻译：当虚拟机系统100b的客机2b出现故障时，虚拟机系统100a的客机2a的停止控制部分5a请求主机1b的停止控制部分4b停止客机的操作 2b。如果客机2b不能正常停止操作，则停止控制部5a请求BMC 8b停止主机1b的动作。 BMC 8b停止主机1b，从而可以停止发生故障的机器。

122. 发明申请

US20110202752A1 SEMICONDUCTOR DEVICE INCLUDING ENCRYPTION SECTION, SEMICONDUCTOR DEVICE INCLUDING EXTERNAL INTERFACE, AND CONTENT REPRODUCTION METHOD 有权
标题翻译：包括加密部分的半导体器件，包括外部接口的半导体器件和内容再现方法
公开(公告)号：US20110202752A1
公开(公告)日：2011-08-18
申请号：US13091882
申请日：2011-04-21
申请人： Makoto FUJIWARA , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
发明人： Makoto FUJIWARA , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
IPC分类号： G06F9/00 , G06F12/14
CPC分类号： G06F21/72 , G06F9/4401 , G06F21/123 , G06F21/85 , G06F2221/2105
摘要： A secure LSI device 1 includes an encryption section 2 for encrypting a program, and an external I/F 50 for inputting/outputting a program or data from/to an external memory 100. In the encryption section 2, the operation of a private key arithmetic processing section 20 is prohibited with respect to a sequence whose execution is determined by a key-generation/update sequencer 30 to be impermissible. In the external I/F 50, a program processing section 51 and a data processing section 55 are structured independently from each other.
摘要翻译：安全LSI装置1包括用于加密程序的加密部分2和用于从外部存储器100输入/输出程序或数据的外部I / F50。在加密部分2中，私钥的操作关于执行由密钥生成/更新排序器30确定的序列是不允许的，算术处理部分20被禁止。在外部I / F50中，程序处理部51和数据处理部55彼此独立地构成。

123. 发明授权

US07907867B2 Creep resistant cleaning device and image forming device having the same 有权
标题翻译：具有抗蠕变性的清洁装置及其成像装置
公开(公告)号：US07907867B2
公开(公告)日：2011-03-15
申请号：US11418215
申请日：2006-05-05
申请人： Fuminori Moro , Shoichi Yoshikawa , Toshiyuki Sakai , Hiroshi Ibaraki , Takayuki Ito
发明人： Fuminori Moro , Shoichi Yoshikawa , Toshiyuki Sakai , Hiroshi Ibaraki , Takayuki Ito
IPC分类号： G03G15/16
CPC分类号： G03G15/161 , G03G2215/1661
摘要： There is provided a cleaning device capable of maintaining a sufficient cleaning effect by preventing creep deformation of a cleaning member. The cleaning device of the present invention for cleaning a transfer body in an image forming apparatus includes a first cleaning member whose top end is brought into pressure contact with the transfer body, and a second cleaning member which is placed downstream from the first cleaning member with respect to a moving direction of the transfer body and whose top end is brought into pressure contact with the transfer body, wherein the second cleaning member is provided rotatably with respect to the first cleaning member.
摘要翻译：提供了一种能够通过防止清洁构件的蠕变变形来保持足够的清洁效果的清洁装置。用于清洁图像形成装置中的转印体的本发明的清洁装置包括：第一清洁部件，其顶端与转印体压力接触;以及第二清洁部件，其设置在第一清洁部件的下游，相对于转印体的移动方向，其顶端与转印体压力接触，其中第二清洁部件相对于第一清洁部件可旋转地设置。

124. 发明授权

US07849331B2 Program update method and server 有权
标题翻译：程序更新方法和服务器
公开(公告)号：US07849331B2
公开(公告)日：2010-12-07
申请号：US12081889
申请日：2008-04-23
申请人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
发明人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
IPC分类号： G06F21/00
CPC分类号： G06F21/123 , G06F21/572 , G06F21/72
摘要： A system including a secure LSI 1 establishes a communication path to/from a server 3 (UD1), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server 3 (UD6 and UD7). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.
摘要翻译：包括安全LSI1的系统建立到服务器3（UD1）的通信路径，并且从服务器3（UD6和UD7）接收通过公共密钥通过加密生成的公共密钥加密程序。对所接收的公用密钥加密程序进行解密以生成原始程序，并且用固有密钥重新加密原始程序，以新生成存储在外部存储器中的固有密钥加密程序。

125. 发明授权

US07781848B2 Semiconductor device with extension structure and method for fabricating the same 有权
标题翻译：具有延伸结构的半导体器件及其制造方法
公开(公告)号：US07781848B2
公开(公告)日：2010-08-24
申请号：US11704924
申请日：2007-02-12
申请人： Takayuki Ito , Kyoichi Suguro , Kouji Matsuo
发明人： Takayuki Ito , Kyoichi Suguro , Kouji Matsuo
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823814 , H01L21/823842
摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.
摘要翻译：半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。栅电极形成在第二栅绝缘膜上。

126. 发明申请

US20100193874A1 SEMICONDUCTOR DEVICE WITH EXTENSION STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有延伸结构的半导体器件及其制造方法
公开(公告)号：US20100193874A1
公开(公告)日：2010-08-05
申请号：US12757658
申请日：2010-04-09
申请人： Takayuki Ito , Kyoichi Suguro , Kouji Matsuo
发明人： Takayuki Ito , Kyoichi Suguro , Kouji Matsuo
IPC分类号： H01L27/092
CPC分类号： H01L21/823857 , H01L21/823814 , H01L21/823842
摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.
摘要翻译：半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。栅电极形成在第二栅绝缘膜上。

127. 发明授权

US07746207B2 Coil device 有权
标题翻译：线圈装置
公开(公告)号：US07746207B2
公开(公告)日：2010-06-29
申请号：US10571771
申请日：2004-11-05
申请人： Mitsuhiro Yamashita , Takashi Nagasaka , Hideki Miura , Yasuhiro Matsukawa , Kazuo Sato , Akira Sato , Hironori Sato , Takayuki Ito , Yasuhiko Kitajima
发明人： Mitsuhiro Yamashita , Takashi Nagasaka , Hideki Miura , Yasuhiro Matsukawa , Kazuo Sato , Akira Sato , Hironori Sato , Takayuki Ito , Yasuhiko Kitajima
IPC分类号： H01F5/00
CPC分类号： H01F27/292 , H01F17/045 , H01F27/027 , H01F27/33 , H01F41/082
摘要： A coil apparatus having a divided winding conformation and a manufacturing method of the coil apparatus which can prevent a winding from collapsing while achieving a reduction in size of a core and simplification of a structure. A coil apparatus includes a ferrite core and a coil provided around the core. The coil includes at least a first coil portion and a second coil portion, and a boundary end surface of the first coil portion on the second coil portion side is inclined in such a manner that its inner peripheral side is closer to the second coil portion than its outer peripheral side. Further, a boundary end surface of the second coil portion on the first coil portion side is inclined in such a manner that its outer peripheral side is closer to the first coil portion than its inner peripheral side.
摘要翻译：具有分割绕组结构的线圈装置和线圈装置的制造方法，其可以防止绕组塌陷同时实现芯的尺寸的减小并且简化结构。线圈装置包括铁氧体磁芯和设置在磁芯周围的线圈。线圈至少包括第一线圈部分和第二线圈部分，并且第二线圈部分侧的第一线圈部分的边界端面以其内周侧比第二线圈部分更靠近第二线圈部分的方式倾斜，其外围边。此外，第一线圈部分侧的第二线圈部分的边界端面以其外周侧比其内周侧更靠近第一线圈部分的方式倾斜。

128. 发明授权

US07685435B2 Program development method, program development supporting system, and program installation method 有权
标题翻译：程序开发方法，程序开发支持系统和程序安装方法
公开(公告)号：US07685435B2
公开(公告)日：2010-03-23
申请号：US10624481
申请日：2003-07-23
申请人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
发明人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
IPC分类号： G06F11/30
CPC分类号： G06F21/72 , G06F8/60 , G06F21/575 , G06F2221/2105
摘要： An development environment of a high security level is provided for a key-installed system. Development of a program for a system having an LSI device which includes a secure memory is performed by providing another LSI device having the same structure and setting the provided LSI device to a development mode which is different from a product operation mode. Alternatively, the provided LSI device is set to an administrator mode to perform development and encryption of a key-generation program. The LSI device is set to a key-generation mode to execute the encrypted key-generation program, thereby generating various keys.
摘要翻译：为安装密钥的系统提供了高安全级别的开发环境。通过提供具有相同结构的另一LSI器件和将所提供的LSI器件设置为与产品操作模式不同的开发模式来执行具有包括安全存储器的LSI器件的系统的程序的开发。或者，将所提供的LSI设备设置为管理员模式，以执行密钥生成程序的开发和加密。 LSI设备被设置为执行加密密钥生成程序的密钥生成模式，从而生成各种密钥。

129. 发明授权

US07501332B2 Doping method and manufacturing method for a semiconductor device 有权
标题翻译：掺杂方法和半导体器件的制造方法
公开(公告)号：US07501332B2
公开(公告)日：2009-03-10
申请号：US11097259
申请日：2005-04-04
申请人： Takayuki Ito , Kyoichi Suguro
发明人： Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L21/823814 , Y10S438/918 , Y10S438/964
摘要： A doping method includes implanting first impurity ions into a semiconductor substrate, so as to form a damaged region in the vicinity of a surface of the semiconductor substrate, the first impurity ions not contributing to electric conductivity; implanting second impurity ions into the semiconductor substrate through the damaged region, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and heating the surface of the semiconductor substrate with a light having a pulse width of about 0.1 ms to about 100 ms, so as to activate the second impurity ions.
摘要翻译：掺杂方法包括将第一杂质离子注入到半导体衬底中，以在半导体衬底的表面附近形成损伤区域，不对导电性有贡献的第一杂质离子; 通过损伤区域将第二杂质离子注入到半导体衬底中，第二杂质离子的原子量大于第一杂质离子并有助于导电性; 并用脉冲宽度为约0.1ms至约100ms的光来加热半导体衬底的表面，以激活第二杂质离子。

130. 发明申请

US20090026178A1 Apparatus for annealing, method for annealing, and method for manufacturing a semi conductor device 有权
标题翻译：退火装置，退火方法以及半导体器件的制造方法
公开(公告)号：US20090026178A1
公开(公告)日：2009-01-29
申请号：US12232443
申请日：2008-09-17
申请人： Takayuki Ito
发明人： Takayuki Ito
IPC分类号： B23K26/00
CPC分类号： H01L21/67115 , H01L21/324 , H01L21/67103
摘要： An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a plurality areas defined laterally in the substrate through a bottom surface of the substrate; and a light source facing a top surface of the substrate, configured to irradiate a pulsed light at a pulse width of about 0.1 ms to about 100 ms on the entire top surface of the substrate.
摘要翻译：用于退火衬底的设备包括：衬底台，其具有被配置为安装衬底的衬底安装部; 热源，其具有设置在所述基板安装部下方的多个加热器，所述加热器通过所述基板的底面单独地预热在所述基板中横向限定的多个区域; 以及面向衬底的顶表面的光源，被配置为在衬底的整个顶表面上以约0.1ms至约100ms的脉冲宽度照射脉冲光。

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