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121. 发明申请

US20120319199A1 Trench Gated Power Device With Multiple Trench Width and its Fabrication Process 有权
标题翻译：具有多个沟槽宽度的沟槽门控功率器件及其制造工艺
公开(公告)号：US20120319199A1
公开(公告)日：2012-12-20
申请号：US13525908
申请日：2012-06-18
申请人： Jun Zeng , Mohamed N. Darwish
发明人： Jun Zeng , Mohamed N. Darwish
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66719 , H01L29/66727 , H01L29/66734
摘要： Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.
摘要翻译：功率器件和相关工艺，其中栅极和场板沟槽都具有多个阶梯宽度，采用自对准工艺步骤。

122. 发明授权

US08310007B2 Integrated power supplies and combined high-side plus low-side switches 有权
标题翻译：集成电源和组合式高端加低端开关
公开(公告)号：US08310007B2
公开(公告)日：2012-11-13
申请号：US12834573
申请日：2010-07-12
申请人： Mohamed N. Darwish , Jun Zeng
发明人： Mohamed N. Darwish , Jun Zeng
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L21/823418 , H01L21/823814 , H01L27/088 , H01L27/0922 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/4175 , H01L29/41766 , H01L29/42368 , H01L29/4933 , H01L29/7816 , H01L29/7835
摘要： The present application discloses new approaches to integrated power. Two new classes of structures each provide an integrated phase leg, in a process which can easily be integrated with low-voltage and/or peripheral circuits: in one class of disclosed structures, a lateral PMOS device is combined with an NMOS device which has predominantly vertical current flow. In another class of embodiments, a predominantly vertical n-channel device is used for the low-side switch, in combination with a lateral n-channel device. In either case, the common output node is preferably brought out at a backside contact. This device structure is advantageously used to construct complete power supply and/or voltage conversions circuits on a single chip (perhaps connected to external passive reactances).
摘要翻译：本申请公开了集成电力的新方法。两个新类别的结构每个都提供一个集成的相位支路，在一个可以容易地与低电压和/或外围电路集成的过程中：在一类公开的结构中，横向PMOS器件与NMOS器件组合，主要垂直电流。在另一类实施例中，主要垂直的n沟道器件与横向n沟道器件组合用于低侧开关。在任一种情况下，公共输出节点优选地在背面接触处被拉出。该器件结构有利地用于在单个芯片（可能连接到外部被动电抗）上构建完整的电源和/或电压转换电路。

123. 发明授权

US08294235B2 Edge termination with improved breakdown voltage 有权
标题翻译：边缘端接，具有改善的击穿电压
公开(公告)号：US08294235B2
公开(公告)日：2012-10-23
申请号：US13085317
申请日：2011-04-12
申请人： Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
发明人： Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/41741 , H01L29/4238
摘要： A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
摘要翻译： MOSFET开关，其在边缘终端区域具有低表面电场，并且还具有增加的击穿电压。 MOSFET开关具有采用N-P-N夹层结构的新边缘端接结构。 MOSFET开关还具有可操作地增强位于N-P-N夹层结构的主PN结的边缘处的任何耗尽层的任何扩展的多晶硅场板结构。

124. 发明申请

US20120043602A1 Power MOSFET and Its Edge Termination 有权
标题翻译：功率MOSFET及其边缘端接
公开(公告)号：US20120043602A1
公开(公告)日：2012-02-23
申请号：US12806203
申请日：2010-01-11
申请人： Jun Zeng , Mohamed N. Darwish , Richard A. Blanchard
发明人： Jun Zeng , Mohamed N. Darwish , Richard A. Blanchard
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.
摘要翻译：改进的MOSFET结构和工艺，其中多个多晶硅嵌入区域被引入到n +源极接触区域。顶部聚场板用于屏蔽电场穿透通道，使得可以使用非常短的通道，而不会危及器件漏源漏电流。底部多场板用于调制漂移区域中的电场分布，使得可以获得更均匀的场分布。

125. 发明申请

US20120032258A1 Semiconductor Device Structures and Related Processes 有权
标题翻译：半导体器件结构及相关工艺
公开(公告)号：US20120032258A1
公开(公告)日：2012-02-09
申请号：US13212747
申请日：2011-08-18
申请人： Jun Zeng , Mohamed N. Darwish
发明人： Jun Zeng , Mohamed N. Darwish
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
摘要翻译：改进了高可靠性的功率RFP结构和制造和操作过程。该结构包括在RFP沟槽下面的多个局部掺杂浓缩区域，浮动或延伸并与MOSFET的体层合并或者通过垂直掺杂区域的区域与源层连接。该局部掺杂剂区域降低器件体二极管的少数载流子注入效率，并改变体二极管反向恢复期间的电场分布。

126. 发明授权

US07989293B2 Trench device structure and fabrication 有权
标题翻译：沟槽装置结构和制造
公开(公告)号：US07989293B2
公开(公告)日：2011-08-02
申请号：US12391450
申请日：2009-02-24
申请人： Richard A. Blanchard , Jun Zeng
发明人： Richard A. Blanchard , Jun Zeng
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/2257 , H01L29/086 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42356 , H01L29/4236 , H01L29/456 , H01L29/4933 , H01L29/66734
摘要： A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer.
摘要翻译：垂直电流装置包括沟槽，该沟槽包括绝缘栅极并向下延伸到第一导电型半导体材料中。磷硅酸盐玻璃层位于绝缘栅极之上，多晶硅层位于聚硅酸盐玻璃层之上。相反导电类型的源极和体扩散定位成与沟槽的侧壁相邻。漂移区域被定位成接收已经被源注入并已经通过身体扩散的多数载体。漏极区域被定位成接收已经通过漂移区域的多数载流子。栅极电容耦合以控制身体区域的一部分的反转。作为替代，可以使用电介质层代替在电介质层中定位永久电荷的掺杂玻璃。

127. 发明申请

US20110169894A1 ELECTROSTATIC LIQUID-EJECTION ACTUATION MECHANISM 有权
标题翻译：静电液滴喷射机构
公开(公告)号：US20110169894A1
公开(公告)日：2011-07-14
申请号：US13119601
申请日：2008-10-31
申请人： Adel Jilani , Jun Zeng , Kenneth James Faase , Tony S. Cruz-Uribe , Michael G. Monroe
发明人： Adel Jilani , Jun Zeng , Kenneth James Faase , Tony S. Cruz-Uribe , Michael G. Monroe
IPC分类号： B41J2/04
CPC分类号： B41J2/14314
摘要： An electrostatic liquid-ejection actuation mechanism includes a membrane, a frame, and one or more deformable beams. The frame has two sides and a number of cross members that are non-parallel to the two sides. The two sides and the cross members define one or more areas individually corresponding to one or more liquid chambers. The deformable beams are disposed between the membrane and the frame. The deformable beams individually correspond to the liquid chambers, and define a number of slits. Each slit is adjacent to one of the two sides of the frame. The deformable beams have a width that is less than a width of the liquid chambers, due at least to the slits.
摘要翻译：静电液体喷射致动机构包括膜，框架和一个或多个可变形梁。框架具有两侧和多个与两侧不平行的横向构件。两侧和横向构件限定一个或多个单独对应于一个或多个液体室的区域。可变形梁设置在膜和框架之间。可变形梁单独对应于液体室，并且限定许多狭缝。每个狭缝与框架的两侧之一相邻。至少对于狭缝，可变形梁的宽度小于液体室的宽度。

128. 发明授权

US07911021B2 Edge termination for semiconductor devices 有权
标题翻译：半导体器件的边缘端接
公开(公告)号：US07911021B2
公开(公告)日：2011-03-22
申请号：US12418808
申请日：2009-04-06
申请人： Amit Paul , Mohamed N. Darwish , Jun Zeng
发明人： Amit Paul , Mohamed N. Darwish , Jun Zeng
IPC分类号： H01L29/02
CPC分类号： H01L29/0649 , H01L29/0692 , H01L29/408 , H01L29/7811 , H01L29/8611
摘要： A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.
摘要翻译：高压端接结构包括外围电压分布网络。一个或多个沟槽结构至少部分地串联连接在第一和第二电源电压之间。沟槽结构包括与半导体材料串联连接的第一和第二限流结构，并且还包括在沟槽壁电介质中的永久电荷。沟槽结构中的电流限制结构以串联 - 并联梯形结构共同连接。与半导体材料组合的限流结构提供了芯部分和边缘部分之间的电压分布。

129. 发明授权

US07910439B2 Super self-aligned trench MOSFET devices, methods, and systems 有权
标题翻译：超自对准沟槽MOSFET器件，方法和系统
公开(公告)号：US07910439B2
公开(公告)日：2011-03-22
申请号：US12392131
申请日：2009-02-25
申请人： Mohamed N. Darwish , Jun Zeng
发明人： Mohamed N. Darwish , Jun Zeng
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/66348 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： A manufacturing process and design structure for a super self-aligned trench power MOSFET. A plurality of super self-aligned trenches of different depths are formed into the body layer and epitaxial layers, preferably by using a multilayer stack of dielectric material etched to form spacers. Respective trenches contain gate conductors, body-contact conductors, and preferably a third trench containing a recessed field plate. This results in a MOSFET structure having high cell density and low gate charges and gate-drain charges.
摘要翻译：超自对准沟槽功率MOSFET的制造工艺和设计结构。优选地，通过蚀刻以形成间隔物的电介质材料的多层堆叠，将不同深度的多个超自对准沟槽形成为主体层和外延层。相应的沟槽包含门导体，体接触导体，并且优选地包含含有凹陷场板的第三沟槽。这导致具有高电池密度和低栅极电荷和栅极 - 漏极电荷的MOSFET结构。

130. 发明授权

US07872660B2 Electro-wetting-on-dielectric printing 有权
标题翻译：电润湿电介质印刷
公开(公告)号：US07872660B2
公开(公告)日：2011-01-18
申请号：US12390662
申请日：2009-02-23
申请人： Jun Zeng , Haggai Karlinski
发明人： Jun Zeng , Haggai Karlinski
IPC分类号： B41J2/39 , B41J2/41
CPC分类号： B41J2/39 , B41J2/0057 , B41J2/14 , B41J2/3855 , B41J2002/14395
摘要： An electro-wetting-on-dielectric printing system includes a drum and an electrode array disposed on a surface of the drum, which is made up of individually addressable electrodes and an ink-phobic coating overlaying the electrodes. Electrically charging a portion of the electrodes allows ink to adhere to a portion of the ink-phobic coating in proximity to the charged electrodes. A method for electro-wetting-on-dielectric printing includes selectively charging individually addressable electrodes within an electrode array, and passing the electrode array through an ink bath, wherein ink adheres areas proximate to charged electrodes to form an image. The image is then transferred to the substrate.
摘要翻译：一种电润湿电介质印刷系统，包括一个鼓和一个设置在滚筒表面上的电极阵列，该表面由独立寻址的电极和覆盖电极的墨迹涂层构成。对电极的一部分进行电荷充电允许墨水附着到邻近带电电极的墨滴涂层的一部分上。一种用于电润湿介电印刷的方法包括对电极阵列内的单独可寻址电极进行选择性充电，并使电极阵列通过墨槽，其中墨附着靠近带电电极的区域形成图像。然后将图像转移到基底。

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