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121. 发明授权

US5001085A Process for creating a metal etch mask which may be utilized for halogen-plasma excavation of deep trenches 失效
标题翻译：用于制造可用于深沟槽的卤素等离子体挖掘的金属蚀刻掩模的方法
公开(公告)号：US5001085A
公开(公告)日：1991-03-19
申请号：US554630
申请日：1990-07-17
申请人： David A. Cathey , Trung T. Doan
发明人： David A. Cathey , Trung T. Doan
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/3081 , H01L21/3065 , Y10S148/105 , Y10S438/945
摘要： A process for creating a metal etch mask from either cobalt, nickel, palladium, iron or copper which may be utilized for halogen-plasma excavation of deep trenches. The process begins by creating a thin isolation layer of either silicon nitride or silicon dioxide on top of the layer to be trenched. A thin layer of one of the metals selected from the aforementioned list of five is then created on top of the isolation layer. A layer of polysilicon is then blanket deposited on top of the refractory metal layer. Photoresist masking is then performed as though the photoresist were the actual pattern for the trench etch. Exposed portions of the polysilicon layer are then etched away with an anisotropic etch. Following a photoresist strip, the substrate and overlying layers are subjected to an elevated temperature step, which causes the polysilicon to react with the underlying metal layer to form metal silicide. In substrate regions where no polysilicon overlies the metal layer, no silicide is formed. Next, the metal silicide is removed with a wet etch. A metal mask remains that is essentially an exact image of the original photoresist mask. Trenches may be etched to any desired depth with virtually no consumption of the metal mask. Once the trench etch is complete, the metal etch mask may be stripped utilizing a wet etch reagent such as aqua regia.
摘要翻译：用于从钴，镍，钯，铁或铜制造金属蚀刻掩模的方法，其可用于深沟槽的卤素等离子体挖掘。该过程开始于在待沟槽的层的顶部上形成氮化硅或二氧化硅的薄隔离层。然后在隔离层的顶部上形成从上述五个列表中选出的金属之一的薄层。然后将多晶硅层覆盖在难熔金属层的顶部。然后进行光刻胶掩模，就像光致抗蚀剂是沟槽蚀刻的实际图案一样。然后用各向异性蚀刻蚀刻掉多晶硅层的暴露部分。在光致抗蚀剂条之后，使衬底和覆盖层经受高温步骤，这使得多晶硅与下面的金属层反应形成金属硅化物。在没有多晶硅覆盖金属层的衬底区域中，不形成硅化物。接下来，用湿蚀刻去除金属硅化物。残留的金属掩模基本上是原始光刻胶掩模的精确图像。沟槽可以蚀刻到任何所需的深度，几乎不消耗金属掩模。一旦沟槽蚀刻完成，就可以使用湿蚀刻剂如王水去除金属蚀刻掩模。

122. 发明授权

US4859304A Temperature controlled anode for plasma dry etchers for etching semiconductor 失效
标题翻译：用于蚀刻半导体的等离子体干蚀刻机的温度控制阳极
公开(公告)号：US4859304A
公开(公告)日：1989-08-22
申请号：US220749
申请日：1988-07-18
申请人： David A. Cathey , John C. Freeman , James Dale , William J. Crane , Eric A. Powell , Jeffrey V. Musser
发明人： David A. Cathey , John C. Freeman , James Dale , William J. Crane , Eric A. Powell , Jeffrey V. Musser
IPC分类号： C23C14/50 , H01J37/32
CPC分类号： H01J37/32431 , C23C14/50
摘要： A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.
摘要翻译：等离子体干蚀刻室设置有阳极板，阳极板具有从冷却芯径向向外延伸到与硅晶片工作产品的径向尺寸相对应的程度的冷却套。为了进一步减少沉积物形成，阳极的外周设计为减少聚合物沉积的影响。

123. 发明授权

US08675827B2 Real-time analytics payment information screening 有权
标题翻译：实时分析支付信息筛选
公开(公告)号：US08675827B2
公开(公告)日：2014-03-18
申请号：US12888728
申请日：2010-09-23
申请人： Juan Vasquez , Prashant Desai , David A. Cathey
发明人： Juan Vasquez , Prashant Desai , David A. Cathey
IPC分类号： H04M1/64
CPC分类号： G06Q20/00 , G06Q20/305 , G06Q20/382 , G06Q20/405 , H04M3/42221 , H04M2201/40
摘要： A method including receiving a voice call; analyzing speech in real-time to determine whether payment information is included in the voice call; omitting to record the voice call when it is determined that the voice call includes the payment information; and recording the voice call when it is determined that the voice call does not include the payment information.
摘要翻译：一种包括接收语音呼叫的方法; 实时分析语音，确定支付信息是否包含在语音通话中; 当确定语音呼叫包括支付信息时，省略记录语音呼叫; 并且当确定语音呼叫不包括支付信息时，记录语音呼叫。

124. 发明授权

US08134467B2 Automated antenna trim for transmitting and receiving semiconductor devices 失效
标题翻译：用于发射和接收半导体器件的自动天线装饰
公开(公告)号：US08134467B2
公开(公告)日：2012-03-13
申请号：US11754841
申请日：2007-05-29
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： G08B13/14
CPC分类号： H01Q1/2208 , G06K19/0723 , G06K19/0726 , G06K19/07749 , H01Q1/2225 , H01Q9/30
摘要： A radio frequency communication device and methods of testing and tuning an antenna attached thereto are described. A radio frequency communication device comprises internal circuitry and an antenna having a plurality of antenna segments associated therewith. Each antenna segment is associated with the antenna in either series or parallel relation through at least one of a fuse and an antifuse. In testing and tuning, a comparison is made to indicate whether the antenna is too short or too long.
摘要翻译：一种射频通信装置及其附着天线的测试和调谐方法。射频通信设备包括内部电路和具有与其相关联的多个天线段的天线。每个天线段通过熔丝和反熔丝中的至少一个与串联或并联的天线相关联。在测试和调谐中，比较天线是否太短或太长。

125. 发明授权

US07812728B2 Methods and apparatuses for radio frequency identification (RFID) tags configured to allow antenna trim 有权
标题翻译：用于射频识别（RFID）标签的方法和装置，其被配置为允许天线修整
公开(公告)号：US07812728B2
公开(公告)日：2010-10-12
申请号：US11845308
申请日：2007-08-27
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： G08B13/14
CPC分类号： H01Q1/2208 , G06K19/0723 , G06K19/0726 , G06K19/07749 , H01Q1/2225 , H01Q9/30
摘要： A radio frequency communication device and method are disclosed. In one aspect, an RFID tag includes an adjustable antenna having a main segment and one or more additional segments that are short relative to the main segment; and the antenna is adjustable to electrically isolate one or more of the additional segments from the main segment. In another aspect, an RFID tag includes an antenna having a first section and a second section short relative to the first section; and the antenna is adjustable to disconnect the first and second sections from each other at a predetermined location. In a further aspect, an RFID tag includes an antenna having a first section and a second section; and the first section is adjustable to decrease the first length of the first section and the second section adjustable to increase the second length of the second section.
摘要翻译：公开了射频通信装置和方法。在一个方面，RFID标签包括可调节天线，其具有主段和相对于主段短的一个或多个附加段; 并且天线是可调节的，以将一个或多个附加段与主段电隔离。另一方面，RFID标签包括具有相对于第一部分缩短的第一部分和第二部分的天线; 并且天线是可调节的，以在预定位置彼此断开第一和第二部分。另一方面，RFID标签包括具有第一部分和第二部分的天线; 并且第一部分可调节以减小第一部分的第一长度，并且第二部分可调节以增加第二部分的第二长度。

126. 发明授权

US06995504B2 Spacers for field emission displays 失效
公开(公告)号：US06995504B2
公开(公告)日：2006-02-07
申请号：US10320238
申请日：2002-12-16
申请人： David A. Cathey , James J. Alwan
发明人： David A. Cathey , James J. Alwan
IPC分类号： H01J1/62 , H01J9/24
CPC分类号： H01J9/242 , H01J9/18 , H01J9/185 , H01J29/028 , H01J29/864 , H01J31/123 , H01J2329/864 , H01J2329/8645
摘要： The disclosed method for forming a field emission display includes forming a cathode and an anode, forming a plurality of photoresist posts over the cathode, and coating the posts with a coating material. The coating material forms sidewalls around the posts. The photoresist posts may then be removed from within the sidewalls. The anode may then be fitted onto the sidewalls so that the sidewalls function as spacers in the field emission display.

127. 发明授权

US06987352B2 Method of preventing junction leakage in field emission devices 失效
公开(公告)号：US06987352B2
公开(公告)日：2006-01-17
申请号：US10191653
申请日：2002-07-08
申请人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
发明人： James J. Hofmann , John K. Lee , David A. Cathey , Glen E. Hush
IPC分类号： H01J1/304
CPC分类号： H01J3/022 , H01J9/241 , H01J29/04 , H01J29/06 , H01J29/89 , H01J31/127 , H01J2201/319
摘要： An apparatus for stabilizing the threshold voltage in an active matrix field emission device is disclosed. The apparatus includes the formation of radiation-blocking elements between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED.

128. 发明授权

US06846739B1 MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer 失效
标题翻译：使用臭氧作为反应物沉积金属氧化物阻挡层的MOCVD方法
公开(公告)号：US06846739B1
公开(公告)日：2005-01-25
申请号：US09031617
申请日：1998-02-27
申请人： David A. Cathey , Trung T. Doan
发明人： David A. Cathey , Trung T. Doan
IPC分类号： C23C16/40 , H01L21/4763 , H01L21/76 , H01L21/768
CPC分类号： H01L21/76829 , C23C16/403 , H01L21/76831 , H01L21/76834
摘要： An inventive process is disclosed for creating a barrier layer on a silicon substrate of an in-process integrated circuit. The process uses MOCVD to form a metal oxide film. The source gas is preferably an organometallic compound. Ozone is used as an oxidizing agent in order to react with the source gas at a low temperature and fully volatilize carbon from the source gas. The high reactivity of ozone at a low temperature provides a more uniform step coverage on contact openings. The process is used to create etch stop layers and diffusion barriers.
摘要翻译：公开了用于在过程中集成电路的硅衬底上形成阻挡层的发明方法。该方法使用MOCVD形成金属氧化物膜。源气体优选为有机金属化合物。使用臭氧作为氧化剂，以便在低温下与原料气反应并使源自气体的碳完全挥发。臭氧在低温下的高反应性在接触开口上提供更均匀的步骤覆盖。该方法用于产生蚀刻停止层和扩散阻挡层。

129. 发明授权

US06638445B2 Silicon dioxide etch process which protects metals 有权
标题翻译：保护金属的二氧化硅蚀刻工艺
公开(公告)号：US06638445B2
公开(公告)日：2003-10-28
申请号：US09149474
申请日：1998-09-08
申请人： Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
发明人： Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
IPC分类号： C09K1300
CPC分类号： H01L21/31111 , H01L21/02071 , Y10S148/051 , Y10T428/24802
摘要： The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
摘要翻译：本发明涉及一种用于半导体材料的新型蚀刻工艺，其抑制金属腐蚀，包括预处理材料，优选用表面活性剂，然后将材料暴露于包含盐，缓冲氧化物蚀刻和任选的表面活性剂。

130. 发明授权

US06555896B2 Etch stop for use in etching of silicon oxide 有权
标题翻译：蚀刻停止用于蚀刻氧化硅
公开(公告)号：US06555896B2
公开(公告)日：2003-04-29
申请号：US09745848
申请日：2000-12-21
申请人： David A. Cathey , J. Brett Rolfson , Valerie A. Ward , Karen M. Winchester
发明人： David A. Cathey , J. Brett Rolfson , Valerie A. Ward , Karen M. Winchester
IPC分类号： H01L2358
CPC分类号： H01L21/31116 , H01L21/3185 , Y10S438/97
摘要： A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N—H bonds, Si—H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
摘要翻译：用于氧化硅干氟蚀刻工艺中的蚀刻停止层由氮化物制成，其中以N-H键，Si-H键或截留的游离氢的形式掺入氢。蚀刻停止层是通过在标准PECVD氮化硅制造工艺中增加NH 3流，降低SiH4流量，降低氮气流量或全部三种来制备的。替代地，蚀刻停止可以通过在PECVD工艺或LPCVD工艺中脉冲RF场来制造。

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