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1. 发明授权

US4859304A Temperature controlled anode for plasma dry etchers for etching semiconductor 失效
标题翻译：用于蚀刻半导体的等离子体干蚀刻机的温度控制阳极
公开(公告)号：US4859304A
公开(公告)日：1989-08-22
申请号：US220749
申请日：1988-07-18
申请人： David A. Cathey , John C. Freeman , James Dale , William J. Crane , Eric A. Powell , Jeffrey V. Musser
发明人： David A. Cathey , John C. Freeman , James Dale , William J. Crane , Eric A. Powell , Jeffrey V. Musser
IPC分类号： C23C14/50 , H01J37/32
CPC分类号： H01J37/32431 , C23C14/50
摘要： A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.
摘要翻译：等离子体干蚀刻室设置有阳极板，阳极板具有从冷却芯径向向外延伸到与硅晶片工作产品的径向尺寸相对应的程度的冷却套。为了进一步减少沉积物形成，阳极的外周设计为减少聚合物沉积的影响。

2. 发明授权

US5380401A Method to remove fluorine residues from bond pads 失效
标题翻译：从接合焊盘去除氟残留物的方法
公开(公告)号：US5380401A
公开(公告)日：1995-01-10
申请号：US4371
申请日：1993-01-14
申请人： Curtis S. Jones , William J. Crane , Robin L. Gilchrist , Rod C. Langley
发明人： Curtis S. Jones , William J. Crane , Robin L. Gilchrist , Rod C. Langley
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , H01L2224/85013
摘要： The process of the present invention comprises the addition of an adequate amount of argon gas in a dry etch system to clear bond pads of residual contaminants which form an undesired oxide coating on the bond pads. Carbon dioxide may be used as a carrier gas along with the argon gas. The process of the present invention preferably takes place in situ, following the silicon nitride pad etch in which fluorine-containing chemicals are used to form the bond pads.
摘要翻译：本发明的方法包括在干蚀刻系统中加入足量的氩气以清除在接合焊盘上形成不期望的氧化物涂层的残留污染物的接合焊盘。二氧化碳可以与氩气一起用作载气。本发明的方法优选在氮化硅垫蚀刻之后就地进行，其中使用含氟化学物质形成接合焊盘。

3. 发明授权

US5169487A Anisotropic etch method 失效
标题翻译：各向异性蚀刻法
公开(公告)号：US5169487A
公开(公告)日：1992-12-08
申请号：US574340
申请日：1990-08-27
申请人： Rod C. Langley , William J. Crane
发明人： Rod C. Langley , William J. Crane
IPC分类号： H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01L21/32137
摘要： A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal, with no bowing or notching.
摘要翻译：一种在硅晶片衬底上原位各向异性蚀刻氧化物/硅化物/聚三聚结构的方法，即使用单个平行板等离子体反应器室和单个惰性阴极，在阴极和阳极之间具有可变的间隙。该方法具有氧化物蚀刻步骤和硅化物/多晶硅蚀刻步骤，它们均以等离子蚀刻步骤进行。该过程允许施加连续蚀刻，而不从晶片从等离子体反应器室移除。完全蚀刻的三明治结构具有垂直分布，与水平方向成90度或几乎不接近，没有弯曲或开槽。

4. 发明授权

US5707485A Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch 失效
标题翻译：通过等离子体蚀刻便于从晶片背面去除材料的方法和装置
公开(公告)号：US5707485A
公开(公告)日：1998-01-13
申请号：US575647
申请日：1995-12-20
申请人： J. Brett Rolfson , William J. Crane
发明人： J. Brett Rolfson , William J. Crane
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32431 , Y10S438/977
摘要： The present invention is a method and apparatus, particularly adaptable to plasma etchers having horizontal base electrodes, for removing films such as silicon nitride from the backside of semiconductor wafers without leaving unetched residue or bumps thereon. Following the loading of a wafer in a plasma etch chamber, the wafer is positioned above the base electrode and within an etchant plasma for a period of time, with all portions of the front side surface and all portions of the back side surface of the wafer being subjected to the plasma for at least a portion of the period.
摘要翻译：本发明是一种特别适用于具有水平基底电极的等离子体蚀刻器的方法和装置，用于从半导体晶片的背面去除诸如氮化硅的膜，而不会在其上留下未蚀刻的残余物或凸块。在等离子体蚀刻室中加载晶片之后，将晶片定位在基极电极的上方并在蚀刻剂等离子体内一段时间，晶片的正面和背面的所有部分的所有部分在等离子体中进行至少一段时间的处理。

5. 外观设计

USD254607S Birthday flag or banner 失效
公开(公告)号：USD254607S
公开(公告)日：1980-04-01
申请号：US816545
申请日：1977-07-18
申请人： William J. Crane
设计人： William J. Crane

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