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    • 130. 发明授权
    • Resist composition and method of forming resist pattern
    • 抗蚀剂图案的抗蚀剂组成和方法
    • US09405200B2
    • 2016-08-02
    • US13624639
    • 2012-09-21
    • Tokyo Ohka Kogyo Co., Ltd.
    • Tsuyoshi NakamuraJiro YokoyaHiroaki ShimizuHideto Nito
    • G03F7/004G03F7/38G03F7/20G03F7/038G03F7/039G03F7/075
    • G03F7/38G03F7/004G03F7/0045G03F7/0046G03F7/0382G03F7/0397G03F7/0755G03F7/0758G03F7/20
    • A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).
    • 一种形成抗蚀剂图案的方法,包括:步骤(1),其中通过涂覆抗蚀剂组合物形成抗蚀剂膜,所述抗蚀剂组合物包括在碱性显影液中表现出增加的溶解度的碱性组分(A),光产生剂组分 (C),酸性供给成分(Z)和含有选自氟原子和硅原子中的至少一种的化合物(F),并且不含显示出极性增加的酸分解基团 通过酸在基底上的作用; 其中抗蚀剂膜被曝光的步骤(2); 步骤(3),其中在步骤(2)之后进行烘烤; 以及步骤(4),其中抗蚀剂膜经受碱显影,从而形成负色调抗蚀剂图案,以及在步骤(1)中使用的抗蚀剂组合物。