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1. 发明授权

US09023585B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09023585B2
公开(公告)日：2015-05-05
申请号：US13922758
申请日：2013-06-20
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hideto Nito , Hiroaki Shimizu
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/38 , Y10S430/12 , Y10S430/121
摘要： A resist composition which generates a base upon exposure and exhibits increased solubility in an alkali developing solution under the action of acid, and the resist composition including: a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid; an acidic compound component (G1) including a nitrogen-containing cation having a pKa value of 7 or less and a counteranion; and a buffer component (K) including a nitrogen-containing cation and a counteranion being a conjugate base for the acid having a pKa value of 0 to 5.
摘要翻译：一种抗蚀剂组合物，其在曝光时产生碱，并且在酸的作用下在碱显影液中表现出增加的溶解性，并且所述抗蚀剂组合物包括：在酸性作用下在碱性显影液中显示出增加的溶解度的碱成分（A） ; 包含pKa值为7以下的含氮阳离子和抗衡阴离子的酸性化合物成分（G1）和包含含氮阳离子和抗衡阴离子的缓冲组分（K）是pKa值为0至5的酸的共轭碱。

2. 发明授权

US08900795B2 Resist composition, method of forming resist pattern and novel compound 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法和新型化合物
公开(公告)号：US08900795B2
公开(公告)日：2014-12-02
申请号：US13738438
申请日：2013-01-10
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Yoshiyuki Utsumi , Hiroaki Shimizu , Jiro Yokoya
IPC分类号： G03F7/004 , C07C309/06 , C07C309/17
CPC分类号： G03F7/004 , C07C309/06 , C07C309/17 , G03F7/0045 , G03F7/0392
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X1 represents divalent linking group; X2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q1 and Q2 represents F or fluorinated alkyl group; and W+ represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H2N+(X2)—X1—Y—O-A-C(Q1)(Q2)—SO3− generated by decomposition upon exposure].
摘要翻译：包含在显影液中显示出改变的溶解度的碱成分（A）和通过曝光分解的酸性化合物成分（J）表现出酸性降低的抗蚀剂组合物，其中，酸性化合物成分（J）含有由式（J1）[式中，R1表示H，OH，卤素原子，烷氧基，烃基或硝基; m表示0-4; n表示0-3; Rx表示H或烃基; X1表示二价连接基团; X2表示H或烃基; Y表示单键或C（O）; A表示可以被氧原子取代的亚烷基，可以具有氟原子的羰基或亚烷基; Q1和Q2表示F或氟化烷基; W +表示pKa小于曝光时分解产生的H2N +（X2）-X1-Y-O-A-C（Q1）（Q2）-SO3-的pKa的伯，仲或叔铵的配位。

3. 发明申请

US20130177853A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20130177853A1
公开(公告)日：2013-07-11
申请号：US13732632
申请日：2013-01-02
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Hiroaki Shimizu , Jiro Yokoya , Tsuyoshi Nakamura , Hideto Nito
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/027 , G03F7/0045 , G03F7/0392 , G03F7/20 , G03F7/40
摘要： A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): wherein R1 represents a group which forms an aromatic ring together with the two carbon atoms bonded to the R1 group; R2 represents a hydrogen atom or a hydrocarbon group; and R3 represents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中将含有在碱性显影液中显示出增加的溶解度的碱成分（A）的抗蚀剂组合物和由通式（C1）表示的化合物施加到基材形成抗蚀剂膜，其中抗蚀剂膜曝光的步骤（2），步骤（2）之后进行烘烤的步骤（3）和其中抗蚀剂膜经受碱的步骤（4）从而形成负色调抗蚀剂图案; 和步骤（1）中使用的抗蚀剂组合物：其中R1表示与键合到R1基团的两个碳原子一起形成芳环的基团; R2表示氢原子或烃基; R 3表示氢原子，羧基或碳原子数1〜15的烃基。

4. 发明申请

US20130137047A1 METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：形成电阻图案的方法
公开(公告)号：US20130137047A1
公开(公告)日：2013-05-30
申请号：US13626549
申请日：2012-09-25
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Hideto Nito , Tsuyoshi Nakamura , Hiroaki Shimizu , Jiro Yokoya
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A method of forming a resist pattern including: step (1) in which a resist composition including a base component and a photobase generator component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to immersion exposure; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, wherein a receding angle of water on the resist film is 65° or more.
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中将包含基底组分和光碱产生剂组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤（2），其中抗蚀剂膜经受浸渍曝光; 步骤（3），其中在步骤（2）之后进行烘烤，使得在抗蚀剂膜的暴露部分，预先从光碱产生剂组分产生的碱和提供给抗蚀剂膜的酸被中和，并且在抗蚀剂膜的未曝光部分，通过酸的作用，碱成分在碱性显影液中的溶解度增加; 以及其中抗蚀剂膜进行碱显影的步骤（4），从而形成抗蚀剂图案，其中抗蚀剂膜上的水的后退角为65°以上。

5. 发明授权

US09405200B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09405200B2
公开(公告)日：2016-08-02
申请号：US13624639
申请日：2012-09-21
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/004 , G03F7/38 , G03F7/20 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including: a step (1) in which a resist film is formed by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; a step (2) in which the resist film is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, and a resist composition used in the step (1).
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中通过涂覆抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中表现出增加的溶解度的碱性组分（A），光产生剂组分（C），酸性供给成分（Z）和含有选自氟原子和硅原子中的至少一种的化合物（F），并且不含显示出极性增加的酸分解基团通过酸在基底上的作用; 其中抗蚀剂膜被曝光的步骤（2）; 步骤（3），其中在步骤（2）之后进行烘烤; 以及步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案，以及在步骤（1）中使用的抗蚀剂组合物。

6. 发明申请

US20150147702A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20150147702A1
公开(公告)日：2015-05-28
申请号：US14608887
申请日：2015-01-29
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/38
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：一种形成抗蚀剂图案的方法，包括通过涂布抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中显示增加的溶解度的基础组分（A），在曝光时产生碱的光产生剂组分（C），酸性供给成分（Z）和含有选自由氟原子和硅原子组成的组中的至少一种的化合物（F），并且不含有通过酸作用而在基材上显示出极性增加的酸分解基团; 对抗蚀剂膜进行曝光烘烤曝光的抗蚀剂膜; 并对抗蚀剂膜进行碱显影，从而形成负色调抗蚀剂图案。

7. 发明授权

US09494866B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09494866B2
公开(公告)日：2016-11-15
申请号：US14608887
申请日：2015-01-29
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Tsuyoshi Nakamura , Jiro Yokoya , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/004 , G03F7/38 , G03F7/20 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/38 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0755 , G03F7/0758 , G03F7/20
摘要： A method of forming a resist pattern, including forming a resist film by coating a resist composition including a base component (A) that exhibits increased solubility in an alkali developing solution, a photo-base generator component (C) that generates a base upon exposure, an acid supply component (Z) and a compound (F) containing at least one selected from the group consisting of a fluorine atom and a silicon atom and containing no acid decomposable group which exhibits increased polarity by the action of acid on a substrate; subjecting the resist film to exposure baking the exposed resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：一种形成抗蚀剂图案的方法，包括通过涂布抗蚀剂组合物形成抗蚀剂膜，所述抗蚀剂组合物包括在碱性显影液中显示增加的溶解度的基础组分（A），在曝光时产生碱的光产生剂组分（C），酸性供给成分（Z）和含有选自由氟原子和硅原子组成的组中的至少一种的化合物（F），并且不含有通过酸作用而在基材上显示出极性增加的酸分解基团; 对抗蚀剂膜进行曝光烘烤曝光的抗蚀剂膜; 并对抗蚀剂膜进行碱显影，从而形成负色调抗蚀剂图案。

8. 发明授权

US09377685B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09377685B2
公开(公告)日：2016-06-28
申请号：US13624638
申请日：2012-09-21
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Hiroaki Shimizu , Tsuyoshi Nakamura , Jiro Yokoya , Hideto Nito
IPC分类号： G03F7/004 , G03F7/38 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/38
摘要： A resist composition used in a method of forming a resist pattern including applying a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component to a substrate to form a resist film; subjecting the resist film to exposure; baking after subjecting the resist film to exposure, wherein at an exposed portion of the resist film, the base generated from the photo-base generator component upon exposure and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of acid provided to the resist film in advance; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：在形成抗蚀剂图案的方法中使用的抗蚀剂组合物，包括将包含在碱性显影液中显示出增加的溶解度的碱成分和光产生剂成分的抗蚀剂组合物施加到基板上以形成抗蚀剂膜; 使抗蚀剂膜曝光; 在抗蚀剂膜曝光之后烘烤，其中在抗蚀剂膜的暴露部分，曝光时由光产生剂组分产生的碱和预先提供给抗蚀剂膜的酸被中和，并且在未曝光部分通过预先提供给抗蚀剂膜的酸的作用，抗蚀剂膜，碱成分在碱性显影液中的溶解度增加; 并对抗蚀剂膜进行碱显影，从而形成负色调抗蚀剂图案。

9. 发明授权

US09029070B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US09029070B2
公开(公告)日：2015-05-12
申请号：US13667237
申请日：2012-11-02
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Hiroaki Shimizu , Tsuyoshi Nakamura , Jiro Yokoya , Hideto Nito
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , C08F220/18 , C08F220/28 , C08F220/36 , G03F7/004 , G03F7/095
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/28 , C08F220/36 , G03F7/0045 , G03F7/095 , G03F7/2041 , G03F7/38 , Y10S430/106 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).
摘要翻译：提供形成抗蚀剂图案的方法包括：步骤（1），其中涂覆含有在曝光时产生碱并在酸性显影液中显示增加的溶解度的基础组分（A）的抗蚀剂组合物到基板以形成抗蚀剂膜; 其中抗蚀剂膜2被曝光的步骤（2）; 步骤（3），其中在步骤（2）之后进行烘烤; 和抗蚀剂膜2进行碱显影的步骤（4），从而形成抗蚀剂膜2的未曝光部分2b已被溶解并除去的负色调抗蚀剂图案，并且将抗蚀剂组合物用于步骤（1）。

10. 发明申请

US20130177854A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND NOVEL COMPOUND 有权
标题翻译：耐蚀组合物，形成耐蚀图案和新型化合物的方法
公开(公告)号：US20130177854A1
公开(公告)日：2013-07-11
申请号：US13738438
申请日：2013-01-10
申请人： Tokyo Ohka Kogyo Co., Ltd.
发明人： Yoshiyuki Utsumi , Hiroaki Shimizu , Jiro Yokoya
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , C07C309/06 , C07C309/17 , G03F7/0045 , G03F7/0392
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X1 represents divalent linking group; X2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q1 and Q2 represents F or fluorinated alkyl group; and W+ represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H2N+(X2)—X1—Y—O-A-C(Q1)(Q2)—SO3− generated by decomposition upon exposure].
摘要翻译：包含在显影液中显示出改变的溶解度的碱成分（A）和通过曝光分解的酸性化合物成分（J）表现出酸性降低的抗蚀剂组合物，其中，酸性化合物成分（J）含有由式（J1）[式中，R1表示H，OH，卤素原子，烷氧基，烃基或硝基; m表示0-4; n表示0-3; Rx表示H或烃基; X1表示二价连接基团; X2表示H或烃基; Y表示单键或C（O）; A表示可以被氧原子取代的亚烷基，可以具有氟原子的羰基或亚烷基; Q1和Q2表示F或氟化烷基; W +表示pKa小于曝光时分解产生的H2N +（X2）-X1-Y-O-A-C（Q1）（Q2）-SO3-的pKa的伯，仲或叔铵的配位。

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