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111. 发明授权

US08846434B2 High efficiency micromorph tandem cells 有权
标题翻译：高效微型串联电池
公开(公告)号：US08846434B2
公开(公告)日：2014-09-30
申请号：US13496256
申请日：2010-09-17
申请人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
发明人： Evelyne Vallat-Sauvain , Daniel Borrello , Julien Bailat , Johannes Meier , Ulrich Kroll , Stefano Benagli , Castens Lucie , Giovanni Monteduro , Miguel Marmelo , Jochen Hoetzel , Yassine Djeridane , Jerome Steinhauser , Jean-Baptiste Orhan
IPC分类号： H01L31/076 , H01L31/18 , H01L31/0224 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/052
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.
摘要翻译：公开了一种制造微型串联电池的方法。微型串联电池包括μc-Si：H底电池和a-Si：H顶电池，LPCVD ZnO前接触层和与背反射器结合的ZnO背接触。该方法包括以下步骤：将AR-抗反射概念应用于微型串联电池; 在微型串联电池中实现中间反射器。微型串联电池可以实现10.6％的稳定效率。

112. 发明授权

US08772778B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08772778B2
公开(公告)日：2014-07-08
申请号：US13396717
申请日：2012-02-15
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

113. 发明授权

US08723179B2 Thin film transistor panel having an etch stopper on semiconductor 有权
标题翻译：薄膜晶体管板在半导体上具有蚀刻停止层
公开(公告)号：US08723179B2
公开(公告)日：2014-05-13
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

114. 发明申请

US20140116501A1 PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池
公开(公告)号：US20140116501A1
公开(公告)日：2014-05-01
申请号：US14055397
申请日：2013-10-16
申请人： STMICROELECTRONICS S.r.I.
发明人： Cosimo GERARDI , Cristina TRINGALI , Sebastiano RAVESI , Marina FOTI , NoemiGraziana SPARTA' , Corrado ACCARDI , Stella LOVERSO
IPC分类号： H01L31/075 , H01L31/0224 , H01L31/18 , H01L31/0376
CPC分类号： H01L31/075 , H01L31/03762 , H01L31/03926 , H01L31/1896 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.
摘要翻译：光伏电池可以包括包括n型掺杂区域和p型掺杂区域的氢化非晶硅层。 n型掺杂区域可以通过固有区域与p型掺杂区域分离。光伏电池可以包括连接到n型掺杂区域的前透明电极和连接到p型掺杂区域的后电极。可以通过调节氢化非晶硅层的H 2 / SiH 4比值来优化室内照明值的效率。

115. 发明授权

US08710505B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08710505B2
公开(公告)日：2014-04-29
申请号：US13556908
申请日：2012-07-24
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L27/1255 , H05B33/0887
摘要： Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained. After that, current flows to a load. In the semiconductor device, the potential of one terminal of the capacitor is set higher than the potential of a source line, and the potential of the source line is set lower than the potential of a power supply line and the cathode side potential of the load.
摘要翻译：降低阈值电压变化的不利影响。在半导体装置中，电荷蓄积在设置在晶体管的栅极和源极之间的电容器中，然后累积在电容器中的电荷被放电; 从而获得晶体管的阈值电压。之后，电流流向负载。在半导体器件中，将电容器的一个端子的电位设置为高于源极线的电位，并且将源极线的电位设置为低于电源线的电位和负载的阴极侧电位。

116. 发明授权

US08698155B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08698155B2
公开(公告)日：2014-04-15
申请号：US13924735
申请日：2013-06-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hajime Kimura
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G09G3/3696 , G02F1/1368
摘要： The time taken to write a signal to a pixel is shortened in a display device. Further, a signal is written at high speed even when high voltage is applied. The display device includes a pixel including a transistor and a liquid crystal element electrically connected to a source or a drain of the transistor. The transistor includes an intrinsic or substantially intrinsic oxide semiconductor as a semiconductor material and has an off-state current of 1×10−17 A/μm or less. The pixel does not include a capacitor. Since it is not necessary to provide a capacitor, the time taken to write a signal can be shortened.
摘要翻译：在显示装置中缩短向像素写入信号所花费的时间。此外，即使施加高电压，也以高速写入信号。显示装置包括像素，该像素包括晶体管和与晶体管的源极或漏极电连接的液晶元件。晶体管包括作为半导体材料的本征或本质上为本征的氧化物半导体，并且具有1×10 17 A /μm以下的截止电流。像素不包括电容器。由于不需要提供电容器，所以可以缩短写入信号所花费的时间。

117. 发明授权

US08674363B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08674363B2
公开(公告)日：2014-03-18
申请号：US13315568
申请日：2011-12-09
申请人： Sun Park , Do-Hyung Ryu
发明人： Sun Park , Do-Hyung Ryu
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L27/3276 , H01L27/3246 , H01L27/3248
摘要： An organic light emitting display apparatus includes a substrate on which a display area and a non-display area are defined, a first electrode on the substrate, an intermediate layer on the first electrode, the intermediate layer includes an organic emission layer, a second electrode on the intermediate layer, a plurality of pad units on the non-display area, and an insulating layer on the pad units. The insulating layer includes contact holes overlapping upper surfaces of the pad units and grooves adjacent to the contact holes.
摘要翻译：一种有机发光显示装置，包括：基板，其上限定有显示区域和非显示区域;基板上的第一电极;第一电极上的中间层;中间层包括有机发光层，第二电极在所述中间层上，在所述非显示区域上的多个垫单元以及所述垫单元上的绝缘层。绝缘层包括与焊盘单元的上表面和邻近接触孔的槽重叠的接触孔。

118. 发明授权

US08624245B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08624245B2
公开(公告)日：2014-01-07
申请号：US12957441
申请日：2010-12-01
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/78648 , H01L29/78693 , H01L29/78696
摘要： A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
摘要翻译：半导体器件包括氧化物半导体层，其包括绝缘表面上的结晶区域，与氧化物半导体层接触的源极电极层和漏极电极层，覆盖氧化物半导体层的栅极绝缘层，源极电极层和漏极电极层以及与晶体区域重叠的区域上的栅极绝缘层上的栅极电极层。结晶区域包括其c轴在基本上垂直于氧化物半导体层的表面的方向上排列的晶体。

119. 发明授权

US08618544B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08618544B2
公开(公告)日：2013-12-31
申请号：US13167762
申请日：2011-06-24
申请人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
发明人： Koji Dairiki , Takayuki Ikeda , Hidekazu Miyairi , Yoshiyuki Kurokawa , Hiromichi Godo , Daisuke Kawae , Takayuki Inoue , Satoshi Kobayashi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

120. 发明申请

US20130312828A1 PHOTOVOLTAIC DEVICE WITH BAND-STOP FILTER 审中-公开
标题翻译：具有带阻滤光片的光电器件
公开(公告)号：US20130312828A1
公开(公告)日：2013-11-28
申请号：US13900588
申请日：2013-05-23
申请人： International Business Machines Corporation
发明人： Nasser D. Afify , Wanda Andreoni , Alessandro Curioni , Petr Khomyakov , Jeehwan Kim , Devendra K. Sadana
IPC分类号： H01L31/0376
CPC分类号： H01L31/0376 , H01L31/02165 , H01L31/02168 , Y02E10/52
摘要： Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ωmin≧0 to an upper limiting angular frequency ωmax where ωmax>ωmin. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ω* in the stopband, so that ωmin
摘要翻译：具有带阻滤波器的光伏器件。该光伏器件包括非晶形光伏材料和带阻滤波器结构，其具有从较低限制角频率ω= 0延伸到ωgamax> omegaamin的上限极角ωωmax的阻带。带阻滤波器结构相对于光伏材料被布置在光伏器件中，以便衰减到达光伏材料的电磁辐射，其中阻挡带上的ω*的角频率，使得蛋黄质

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