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    • 112. 发明授权
    • Dynamic surface annealing using addressable laser array with pyrometry feedback
    • 使用具有高温测量反馈的可寻址激光器阵列进行动态表面退火
    • US07494272B2
    • 2009-02-24
    • US11469684
    • 2006-09-01
    • Timothy N. ThomasDean JenningsBruce E. AdamsAbhilash J. Mayur
    • Timothy N. ThomasDean JenningsBruce E. AdamsAbhilash J. Mayur
    • G01N3/28G01J5/08H01L21/477
    • F27B17/0025B23K26/03B23K26/032B23K26/034B23K26/0665B23K26/0738H01L21/67115
    • Apparatus for dynamic surface annealing of a semiconductor wafer includes a source of laser radiation emitting at a laser wavelength and comprising an array of lasers arranged in rows and columns, the optical power of each the laser being individual adjustable and optics for focusing the radiation from the array of lasers into a narrow line beam in a workpiece plane corresponding to a workpiece surface, whereby the optics images respective columns of the laser array onto respective sections of the narrow line beam. A pyrometer sensor is provided that is sensitive to a pyrometer wavelength. An optical element in an optical path of the optics is tuned to divert radiation emanating from the workpiece plane to the pyrometry sensor. As a result, the optics images each of the respective section of the narrow line beam onto a corresponding portion of the pyrometer sensor. The apparatus further includes a controller responsive to the pyrometry sensor and coupled to adjust individual optical outputs of respective columns of the laser array in accordance with outputs of corresponding portions of the pyrometry sensor.
    • 用于半导体晶片的动态表面退火的装置包括以激光波长发射的激光辐射源,并且包括排列成行和列的激光阵列,每个激光器的光功率是单独调节的,并且用于将来自 激光器阵列在对应于工件表面的工件平面中变成窄线束,由此光学器件将激光阵列的相应列映射到窄线束的相应部分上。 提供对高温计波长敏感的高温计传感器。 调整光学器件的光路中的光学元件以将从工件平面发出的辐射转移到高温测量传感器。 结果,光学器件将窄线束的各个部分的每一个图像映射到高温计传感器的相应部分上。 该装置还包括响应于高温测量传感器并耦合以根据高温测量传感器的对应部分的输出调节激光器阵列的各列的各个光学输出的控制器。
    • 115. 发明授权
    • Via hole depth detector
    • 通孔深度检测器
    • US07471384B2
    • 2008-12-30
    • US11896336
    • 2007-08-31
    • Keiji NomaruHiroshi MorikazuYasuomi KaneuchiKouichi NehashiYutaka Kobayashi
    • Keiji NomaruHiroshi MorikazuYasuomi KaneuchiKouichi NehashiYutaka Kobayashi
    • G01N21/00
    • G01B11/22B23K26/03B23K26/034B23K26/0643B23K26/382B23K26/40B23K2103/50
    • A via hole depth detector for detecting the depth of a via hole formed in a workpiece held on a chuck table, comprising: a first surface position detection means which comprises a first detection laser beam oscillation means for oscillating a first detection laser beam having a predetermined wavelength and detects the height position of an illuminated portion of the workpiece based on the reflected light of the first detection laser beam; a second surface position detection means which comprises a second detection laser beam oscillation means for oscillating a second detection laser beam having a wavelength different from the wavelength of the first detection laser beam and detects the height position of an illuminated portion of the workpiece based on the reflected light of the second detection laser beam; and a control means for obtaining the depth of the via hole formed in the workpiece based on a detection value obtained by the first surface position detection means and a detection value obtained by the second surface position detection means.
    • 一种通孔深度检测器,用于检测形成在保持在卡盘台上的工件中的通孔的深度,包括:第一表面位置检测装置,包括第一检测激光束振荡装置,用于振荡具有预定 基于第一检测激光束的反射光检测被照射部分的高度位置; 第二表面位置检测装置,其包括用于振荡具有与第一检测激光束的波长不同的波长的第二检测激光束的第二检测激光束振荡装置,并且基于该第二检测激光束振荡装置检测工件的被照射部分的高度位置 第二检测激光束的反射光; 以及控制装置,用于基于由第一表面位置检测装置获得的检测值和由第二表面位置检测装置获得的检测值来获得形成在工件中的通孔的深度。
    • 118. 发明申请
    • METHOD AND SYSTEM FOR LASER PROCESSING
    • 用于激光加工的方法和系统
    • US20080223836A1
    • 2008-09-18
    • US11684697
    • 2007-03-12
    • William A. Miller
    • William A. Miller
    • B23K26/02
    • B23K26/032B23K26/03B23K26/042B23K26/351H05K3/0026
    • A laser processing system has a platform to support a work piece to be processed, a laser to operate on the work piece, a laser control system to control operation of the laser, and a system control to provide instructions to the laser control system based upon at least the work piece to be processed. A method of manufacture includes identifying at least a portion of a structure to be laser processed, creating a set of instructions to direct a laser to process the portion of the structure, operating the laser in accordance with the set of instructions to laser process the portion of the structure, measuring at least one of an electrical characteristic or a mechanical characteristic to obtain an actual electrical characteristic value, comparing the actual value to a target value to determine if further processing is needed, if further processing is needed, automatically adjusting operation of the laser to reprocess the portion of the structure, and repeating the measuring, comparing and adjusting until the actual value matches the target value within a given tolerance.
    • 激光处理系统具有支撑要处理的工件的平台,用于在工件上操作的激光器,用于控制激光器的操作的激光控制系统以及基于以下操作的系统控制以向激光控制系统提供指令 至少要加工的工件。 一种制造方法包括识别要被激光处理的结构的至少一部分,创建一组指令以指导激光器处理结构的该部分,根据该组指令来操作激光器以激光处理该部分 测量电特性或机械特性中的至少一个以获得实际电特性值,将实际值与目标值进行比较以确定是否需要进一步处理,如果需要进一步处理,则自动调整操作 激光器重新处理结构的部分,并重复测量,比较和调整,直到实际值与给定公差内的目标值匹配。
    • 120. 发明申请
    • Wafer processing method and laser processing apparatus
    • 晶圆加工方法和激光加工装置
    • US20080200012A1
    • 2008-08-21
    • US12068459
    • 2008-02-06
    • Ryugo Oba
    • Ryugo Oba
    • H01L21/00
    • H01L21/67132B23K26/03B23K26/032B23K26/40B23K2103/50H01L21/78H01L22/12
    • In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface. The wafer processing method comprises irradiating a predetermined processing region of the wafer held on the chuck table with the laser beam to perform the penetration in a predetermined manner, then lighting the light emitting body, with the wafer being held on the chuck table, imaging the processing region by the imaging means, and determining acceptance or rejection of the penetration based on whether or not light has passed through the processing region.
    • 在通过使用包括用于保持晶片的卡盘台的激光加工装置贯穿晶片的晶片处理方法中,用激光束照射保持在卡盘台上的晶片的激光束照射装置,以及用于对晶片进行成像的成像装置 卡盘台包括卡盘台主体,设置在卡盘台主体的上表面上并具有用于保持晶片整个表面的保持表面的保持件,保持件包括透明的 或半透明构件,以及发光体,其布置在与保持表面相对的保持构件的侧面的侧面。 晶片处理方法包括用激光束照射保持在卡盘台上的晶片的预定处理区域,以预定方式进行穿透,然后点亮发光体,晶片保持在卡盘台上,对 通过成像装置处理区域,并且基于光是否通过处理区域来确定穿透的接受或拒绝。