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111. 发明申请

US20070137780A1 Method of fabricating micro actuator having media stage 失效
标题翻译：具有介质载物台的微型致动器的制造方法
公开(公告)号：US20070137780A1
公开(公告)日：2007-06-21
申请号：US11595876
申请日：2006-11-13
申请人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
发明人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
IPC分类号： B32B37/00
CPC分类号： H02K41/0354 , B81B3/0062 , B81B2201/038 , B81B2201/11 , B81B2203/051 , B82Y10/00 , G11B9/1436 , H02K2201/18
摘要： A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
摘要翻译：提供了一种制造微型致动器的方法，包括：介质台，其具有介质装载表面和用于驱动介质载物台的线圈，其形成在介质载台的相对表面上至介质装载表面。该方法包括在第一基板的第一表面上形成凹槽，在第二基板的第一表面上形成线圈，将第一基板的第一表面接合到第二基板的第一表面，并且形成介质装载表面在第二基板的与第二基板的第一表面相对的第二表面上。

112. 发明申请

US20070042522A1 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US20070042522A1
公开(公告)日：2007-02-22
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

113. 发明申请

US20070040116A1 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US20070040116A1
公开(公告)日：2007-02-22
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G12B21/02
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

114. 发明授权

US07170843B2 High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus 有权
标题翻译：高密度数据存储介质，数据存储介质的制造方法，数据存储装置以及通过使用数据存储装置向数据存储介质写入数据和读取和擦除数据的方法
公开(公告)号：US07170843B2
公开(公告)日：2007-01-30
申请号：US10610540
申请日：2003-07-02
申请人： Seung-bum Hong , In-kyeong Yoo , Ju-hwan Jung
发明人： Seung-bum Hong , In-kyeong Yoo , Ju-hwan Jung
IPC分类号： H01J3/14
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/14 , G11B9/1409 , G11B9/1472 , G11B9/149 , G11B11/08 , G11B13/06
摘要： A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.
摘要翻译：提供高密度数据存储介质，数据存储介质的制造方法，高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法。数据存储介质包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞而从其中发射光电子;以及电介质层沉积在光电子发射层上并存储从光电子发射层发射的光电子。该数据存储装置包括支持数据存储介质的载台，该载台包括下电极，沉积在下电极上的绝缘层，沉积在绝缘层上的光电子发射层，并且具有多个突起，由于突起和光子之间的碰撞，以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层，驱动载物台的扫描仪，放置在数据存储介质上的探针，并且包括形成电场的尖端数据存储介质和悬臂支撑设置在其一端的尖端，以便保持数据存储介质和尖端之间的预定距离，施加驱动信号的电路单元，数据写入信号和数据擦除信号扫描仪和探头，并检测数据读取信号，以及光源照射数据存储介质。

115. 发明申请

US20060226733A1 Actuator and method of driving the same 有权
标题翻译：执行器及其驱动方法
公开(公告)号：US20060226733A1
公开(公告)日：2006-10-12
申请号：US11397717
申请日：2006-04-05
申请人： Dong-ki Min , Jin-ho Lee , Seung-bum Hong
发明人： Dong-ki Min , Jin-ho Lee , Seung-bum Hong
IPC分类号： H02N1/00
CPC分类号： H02N1/008
摘要： An electrostatic actuator and a method of driving the same are provided. The actuator controls the displacement of a target object by adjusting a voltage between fixed comb electrodes and a moving comb electrode. The actuator includes an actuator control signal generator generating an actuator control signal by pulse-width modulating an actuator driving signal and a carrier signal; and an actuator unit including the fixed comb electrodes and the moving comb electrode and adjusting the voltage according to the actuator control signal. Accordingly, the displacement can be easily controlled using the pulse-width-modulated actuator driving signal even when both the voltage of the actuator driving signal and the frequency of the carrier signal are high.
摘要翻译：提供静电致动器及其驱动方法。致动器通过调节固定梳状电极和移动梳状电极之间的电压来控制目标物体的位移。致动器包括致动器控制信号发生器，其通过脉冲宽度调制致动器驱动信号和载波信号来产生致动器控制信号; 以及致动器单元，其包括固定梳状电极和移动梳状电极，并根据致动器控制信号调节电压。因此，即使在致动器驱动信号的电压和载波信号的频率都高的情况下，也可以容易地利用脉冲宽度调制的致动器驱动信号控制位移。

116. 发明申请

US20060157440A1 Semiconductor probe with resistive tip and method of fabricating the same 有权
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060157440A1
公开(公告)日：2006-07-20
申请号：US11322340
申请日：2006-01-03
申请人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
发明人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： C23F1/00 , B44C1/22 , G01N23/00
CPC分类号： G01Q70/16 , G01Q70/14 , G01Q80/00 , G11B9/1409
摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
摘要翻译：具有电阻尖端的半导体探针和制造半导体探针的方法。掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区。半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层，位置对应于电阻区域。

117. 发明申请

US20060145806A1 Magnetic logic device and methods of manufacturing and operating the same 有权
公开(公告)号：US20060145806A1
公开(公告)日：2006-07-06
申请号：US11320898
申请日：2005-12-30
申请人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
发明人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
IPC分类号： H01F5/00
CPC分类号： H03K19/16 , H01L43/08
摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

118. 发明申请

US20060060779A1 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060060779A1
公开(公告)日：2006-03-23
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：具有电阻尖端的半导体探针及其制造方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

119. 发明申请

US20050040730A1 Two-axis actuator with large area stage 失效
标题翻译：具有大面积舞台的双轴执行器
公开(公告)号：US20050040730A1
公开(公告)日：2005-02-24
申请号：US10922861
申请日：2004-08-23
申请人： Kyoung-lock Baeck , Jong-up Jun , Ju-hwan Jung , Seung-bum Hong
发明人： Kyoung-lock Baeck , Jong-up Jun , Ju-hwan Jung , Seung-bum Hong
IPC分类号： H02N1/06 , H02N1/00 , B60N2/02
CPC分类号： H02N1/008
摘要： Provided is a two-axis actuator having a large stage area. The two-axis actuator includes a stage moving in two directions and connected to an upper part of an inertial part. The two-axis actuator is configured to maximize a stage area relative to the overall area of the actuator, thereby increasing the data storage capacity of the stage.
摘要翻译：提供了具有大台阶面积的双轴致动器。双轴致动器包括在两个方向上移动并连接到惯性部件的上部的台架。双轴致动器被配置为使得相对于致动器的总体区域最大化舞台区域，从而增加舞台的数据存储容量。

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