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111. 发明授权

US07002896B2 Information recording medium and method for producing the same, and method for recording/reproducing information thereon 有权
公开(公告)号：US07002896B2
公开(公告)日：2006-02-21
申请号：US10637842
申请日：2003-08-08
申请人： Takashi Nishihara , Rie Kojima , Noboru Yamada
发明人： Takashi Nishihara , Rie Kojima , Noboru Yamada
IPC分类号： G11B7/24
CPC分类号： G11B7/253 , G11B7/0045 , G11B7/126 , G11B7/1263 , G11B7/24 , G11B7/24038 , G11B7/243 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/26 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10T428/21 , Y10T428/24942
摘要： An information recording medium includes a first information layer and a second information layer. The first information layer includes a first recording layer in which a reversible phase change is caused between a crystalline phase and an amorphous phase by irradiation of a laser beam or application of current. The second information layer includes a second recording layer in which a reversible phase change is caused between a crystalline phase and an amorphous phase by the irradiation of the laser beam or the application of the current. The first recording layer is made of a first material, the second recording layer is made of a second material, and the first material is different from the second material.

112. 发明申请

US20050093043A1 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20050093043A1
公开(公告)日：2005-05-05
申请号：US10980309
申请日：2004-11-04
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： G11C16/02 , H01L27/11 , H01L27/24 , H01L45/00 , H01L29/76 , H01L21/48
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

113. 发明申请

US20050082162A1 Information recording medium, method of manufacturing the same, and sputtering target 审中-公开
标题翻译：信息记录介质，其制造方法和溅射靶
公开(公告)号：US20050082162A1
公开(公告)日：2005-04-21
申请号：US10947187
申请日：2004-09-23
申请人： Mayumi Uno , Rie Kojima , Noboru Yamada
发明人： Mayumi Uno , Rie Kojima , Noboru Yamada
IPC分类号： C23C14/00 , C23C14/08 , C23C14/34 , G11B7/243 , G11B7/26 , B32B3/02 , G11B7/24
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/08 , G11B7/243 , G11B7/26 , G11B2007/24316 , G11B2007/2432
摘要： When manufacturing a write-once recording medium which contains an oxide having a lower oxygen content as a main component, if film formation of a recording layer is performed by introducing a large amount of oxygen into the film forming gas and the sputtering target does not contain oxygen, each medium produced has different properties, because a variation of oxygen flow in the gas easily occurs and the composition ratio of oxygen which is contained in the recording layer easily varies. To solve the problems above, an information recording medium, having at least a recording layer on a substrate and being able to record and reproduce information, contains an oxide A-O or A-O-M (A is a material which contains at least any one of Te, Sb, Ge, Sn, In, Zn, Mo and W, and M is a material which contains at least any one of a metal element, a semi-metal element, and a semiconductor-metal element), and a sputtering target used in the process of producing the layer contains at least A-O and, A and/or M. In this way, a recording layer having high reproducibility and stable properties can be produced, even in a mass production line.
摘要翻译：当制造含有氧含量较低的氧化物作为主要成分的一次写入记录介质时，如果通过向成膜气体中引入大量的氧而进行记录层的成膜，并且溅射靶不含有氧，每种产生的介质具有不同的性质，因为气体中的氧气流的变化容易发生，并且包含在记录层中的氧的组成比容易变化。为了解决上述问题，在基板上至少具有记录层并且能够记录和再现信息的信息记录介质包含氧化物AO或AOM（A是包含Te，Sb中的至少一种的材料，Ge，Sn，In，Zn，Mo和W中的至少任一种的材料，M是含有金属元素，半金属元素和半导体金属元素中的至少任一种的材料），以及用于生产该层的方法至少包含AO和A和/或M.这样，即使在大规模生产线中也可以生产具有高重现性和稳定性能的记录层。

114. 发明授权

US06858278B2 Information recording medium and method for producing the same 有权
标题翻译：信息记录介质及其制造方法
公开(公告)号：US06858278B2
公开(公告)日：2005-02-22
申请号：US10400432
申请日：2003-03-28
申请人： Rie Kojima , Takashi Nishihara , Haruhiko Habuta , Noboru Yamada
发明人： Rie Kojima , Takashi Nishihara , Haruhiko Habuta , Noboru Yamada
IPC分类号： G11B7/243 , G11B7/257 , B32B3/02
CPC分类号： G11B7/2578 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/256 , G11B7/259 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/2432 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1625 , Y10T428/21
摘要： An information recording medium which ensures high reliability and favorable overwrite cycle-ability is provided, even when an interface layer is not provided between a recording layer and a dielectric layer. The recording layer 4 and the dielectric layers 2 and 6 are formed on the surface of the substrate 1. In the recording layer 4, a phase change is generated between a crystal phase and an amorphous phase by irradiation of light or application of an electric energy. The dielectric layers 2 and 6 are Zr/Hf—Cr—O-based material layers comprising at least one of Zr and Hf, Cr and O, preferably consisting essentially of material expressed, for example, with the formula (MO2)N(Cr2O3)100−N (mol %) wherein M is either or both of Zr and Hf, and 20≦N≦80.
摘要翻译：即使在记录层和电介质层之间没有设置界面层的情况下，也提供确保高可靠性和良好的重写循环性的信息记录介质。记录层4和电介质层2和6形成在基板1的表面上。在记录层4中，通过照射光或施加电能在结晶相和非晶相之间产生相变。电介质层2和6是包括Zr和Hf中的至少一种的Cr / O的Zr / Hf-Cr-O基材料层，优选由例如由式（MO 2）N表示的材料（Cr 2 O 3））100-N（摩尔％）其中M是Zr和Hf中的一种或两种，20≤N＆LE; 80。

115. 发明授权

US06858277B1 Information recording medium and method for manufacturing the same 有权
公开(公告)号：US06858277B1
公开(公告)日：2005-02-22
申请号：US09936601
申请日：2000-03-10
申请人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
发明人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
IPC分类号： G11B7/2433 , G03G5/02 , G11B7/26 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B13/00 , G11C16/02 , H01L45/00 , B32B3/02 , G11B7/24
CPC分类号： G11B13/00 , G03G5/02 , G11B7/243 , G11B7/2433 , G11B7/2585 , G11B7/26 , G11B7/266 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/2571 , G11B2007/25713 , G11C13/0004 , G11C13/04 , G11C2029/0403 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683 , Y10T428/21
摘要： An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.

116. 发明申请

US20050018593A1 Information recording medium and method for producing the same 有权
标题翻译：信息记录介质及其制造方法
公开(公告)号：US20050018593A1
公开(公告)日：2005-01-27
申请号：US10898709
申请日：2004-07-23
申请人： Yukako Doi , Rie Kojima , Noboru Yamada
发明人： Yukako Doi , Rie Kojima , Noboru Yamada
IPC分类号： G11B7/243 , G11B7/257 , G11B7/2578 , G11B7/258 , G11B7/259 , G11B7/26 , G11B11/00 , H01L45/00 , G11B7/24
CPC分类号： G11B7/266 , G11B7/252 , G11B7/256 , G11B7/2578 , G11B7/259 , G11B2007/24308 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , G11B2007/25718 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1625
摘要： In an information recording medium of the present invention, a recording layer and first and second dielectric layers are formed on a surface of a substrate. In the recording layer, at least one of recording and reproduction is caused by irradiation of light or application of electric energy. The dielectric layers are oxide-based material layers or oxide-nitride-based material layers containing an oxide of at least one element selected from the group GM consisting of Sn, Ga and Zn, and at least one of an oxide and a nitride of at least one element selected from the group GL consisting of Al, Si and B, or oxide-fluoride-based material layers containing a fluoride of at least one element selected from La and Ce, and one example of at least one of element selected from the group GM.
摘要翻译：在本发明的信息记录介质中，在基板的表面上形成记录层和第一和第二介质层。在记录层中，通过照射光或施加电能引起记录和再现中的至少一种。电介质层是含有选自由Sn，Ga和Zn组成的组中的至少一种元素的氧化物的氧化物基材料层或氧化物 - 氮化物基材料层，以及至少一种氧化物和氮化物选自由Al，Si和B组成的组GL中的至少一种元素，或含有选自La和Ce中的至少一种元素的氟化物的氧化物氟化物基材料层，以及选自以下的至少一种元素的一个实例：集团总经理

117. 发明授权

US06751184B2 Information recording medium, method for producing the same, and recording/reproducing method using the same 失效
标题翻译：信息记录介质，其制造方法以及使用其的记录/再现方法
公开(公告)号：US06751184B2
公开(公告)日：2004-06-15
申请号：US09903285
申请日：2001-07-11
申请人： Rie Kojima , Takashi Nishihara , Noboru Yamada
发明人： Rie Kojima , Takashi Nishihara , Noboru Yamada
IPC分类号： G11B700
CPC分类号： G11B7/24038 , G11B7/00454 , G11B7/0052 , G11B7/007 , G11B7/24 , G11B7/243 , G11B7/2542 , G11B7/256 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/26 , G11B2007/0013 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： An information recording medium of the present invention includes a first substrate, a second substrate disposed so as to be opposed to the first substrate, a first information layer disposed between the first substrate and the second substrate, a second information layer disposed between the first information layer and the second substrate, and an intermediate layer disposed between the first information layer and the second information layer. The first information layer includes a first recording layer that is transformed in phase reversibly between a crystal phase and an amorphous phase with a laser beam, and the second information layer includes a second recording layer that is transformed in phase reversibly between a crystal phase and an amorphous phase. The first recording layer contains, Ge, Sn, Sb, and Te, and has a thickness of 9 nm or less.
摘要翻译：本发明的信息记录介质包括第一基板，与第一基板相对设置的第二基板，设置在第一基板和第二基板之间的第一信息层，设置在第一信息之间的第二信息层层和第二基板，以及设置在第一信息层和第二信息层之间的中间层。第一信息层包括第一记录层，该第一记录层在具有激光束的晶相和非晶相之间可逆地相变地转换，并且第二信息层包括第二记录层，该第二记录层在晶相和非晶相。第一记录层包含Ge，Sn，Sb和Te，其厚度为9nm以下。

118. 发明授权

US06743496B2 Information recording medium and method for producing the same, and method for recording/reproducing information thereon 有权
公开(公告)号：US06743496B2
公开(公告)日：2004-06-01
申请号：US10637919
申请日：2003-08-08
申请人： Takashi Nishihara , Rie Kojima , Noboru Yamada
发明人： Takashi Nishihara , Rie Kojima , Noboru Yamada
IPC分类号： B32B302
CPC分类号： G11B7/253 , G11B7/0045 , G11B7/126 , G11B7/1263 , G11B7/24 , G11B7/24038 , G11B7/243 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/2534 , G11B7/26 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , Y10T428/21 , Y10T428/24942
摘要： An information recording medium includes a first information layer and a second information layer. The first information layer includes a first recording layer in which a reversible phase change is caused between a crystalline phase and an amorphous phase by irradiation of a laser beam or application of current. The second information layer includes a second recording layer in which a reversible phase change is caused between a crystalline phase and an amorphous phase by the irradiation of the laser beam or the application of the current. The first recording layer is made of a first material, the second recording layer is made of a second material, and the first material is different from the second material.

119. 发明授权

US06610380B2 Optical information recording medium, manufacturing method, recording and reproduction method, and recording/reproduction device 有权
公开(公告)号：US06610380B2
公开(公告)日：2003-08-26
申请号：US09923190
申请日：2001-08-06
申请人： Hideki Kitaura , Noboru Yamada
发明人： Hideki Kitaura , Noboru Yamada
IPC分类号： B32B302
CPC分类号： G11B7/00454 , G11B7/0052 , G11B7/243 , G11B7/2534 , G11B7/26 , G11B2007/24316 , G11B2007/2432 , G11B2007/25706 , G11B2007/2571 , G11B2007/25711 , G11B2007/25713 , G11B2007/25715 , Y10T428/21
摘要： An optical information recording medium comprises a transparent substrate on which an information layer is disposed, the information layer comprising a recording layer and a dielectric layer, and the recording layer containing Te, O and M (wherein M is one or more elements selected from Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Au and Bi), wherein a content ratio of O-atom in the recording layer ranges from 25 atomic percent to 60 atomic percent, and a content ratio of M-atom therein ranges from 1 atomic percent to 35 atomic percent, and a refractive index n of the dielectric layer is not less than 1.5. Accordingly, a write-once optical information recording medium, from which excellent recording reproduction characteristics with a high C/N ratio can be obtained even for recording and reproduction of high density information using a violet laser beam, is provided as well as a manufacturing method, a recording and reproduction method and a recording/reproduction device for the same.

120. 发明授权

US06432502B1 Optical recording medium and method of manufacturing the same 有权
标题翻译：光记录介质及其制造方法
公开(公告)号：US06432502B1
公开(公告)日：2002-08-13
申请号：US09711622
申请日：2000-11-13
申请人： Hideki Kitaura , Rie Kojima , Noboru Yamada
发明人： Hideki Kitaura , Rie Kojima , Noboru Yamada
IPC分类号： B32B302
CPC分类号： G11B7/266 , G11B7/00454 , G11B7/24 , G11B7/243 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/26 , G11B7/268 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , Y10T428/21
摘要： An optical recording medium having stable recording and reproducing characteristics even after a long term storage and a method of manufacturing the same are provided. The optical recording medium includes a substrate and a recording layer positioned above the substrate. The recording layer includes a phase change layer changing in phase reversibly between a crystalline state and an amorphous state by an irradiation of an optical beam, and a crystalline nucleation layer positioned adjacent to the phase change layer for facilitating crystallization of the phase change layer. The phase change layer is in the amorphous state, and the crystalline nucleation layer contains Te in a range between 33 atom % and 67 atom %.
摘要翻译：提供了即使在长期存储之后也具有稳定的记录和再现特性的光记录介质及其制造方法。光记录介质包括基板和位于基板上方的记录层。记录层包括通过光束的照射在结晶状态和非晶状态之间可逆地相位变化的相变层以及位于相变层附近的用于促进相变层结晶的结晶成核层。相变层处于非晶状态，结晶成核层含有Te在33原子％〜67原子％的范围内。

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