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    • 105. 发明授权
    • Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers
    • 电流垂直于平面的磁阻读取传感器,带有沟槽接触和自由层
    • US09099121B2
    • 2015-08-04
    • US14293199
    • 2014-06-02
    • International Business Machines Corporation
    • Giovanni CherubiniSimeon FurrerJens JelittoMark A. Lantz
    • G11B5/39
    • G11B5/39G11B5/3909G11B5/3912G11B5/3929G11B5/3948G11B5/3958G11B2005/3996Y10T428/1114Y10T428/1121Y10T428/1129
    • A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.
    • 电流垂直于平面的磁阻读取传感器包括沿堆叠方向延伸的层叠层,以及平行于层叠方向的边缘表面,其形成读取传感器的支承表面的至少一部分,该轴承表面被设计为 面对记录介质。 层叠层包括第一接触层,铁磁自由层,其磁取向根据所施加的磁场而变化,在第一接触层上方,铁磁层上方的非磁性层,非磁性层上方的铁磁自旋注入层, 磁性层和自旋注入层上方的第二接触层,使得电流可以沿平行于堆叠方向的电流垂直于平面的方向在第二接触层和第一接触层之间流动。 层叠层还包括沿着平行于支承表面并垂直于层叠方向的方向延伸的一系列结构。
    • 107. 发明授权
    • Multi-read sensor having a narrow read gap structure
    • 具有窄读取间隙结构的多读传感器
    • US08953284B1
    • 2015-02-10
    • US14085734
    • 2013-11-20
    • HGST Netherlands B.V.
    • Hideki MashimaNobuo YoshidaMasashi HattoriTutomu Yasuda
    • G11B5/39
    • G11B5/3912G11B5/3948
    • In one embodiment, a magnetic head includes a lower shield layer positioned at a media-facing surface of the magnetic head, at least two magnetoresistive (MR) elements positioned above the lower shield layer, each MR element extending in an element height direction away from the media-facing surface of the magnetic head, back wiring layers positioned above at least one lower layer of each of the MR elements at a position away from the media-facing surface of the magnetic head in the element height direction, wherein the back wiring layers are configured to electrically communicate with the MR elements and configured to separately extract signals from each MR element during a read operation, and an upper shield layer positioned above the MR elements that is configured to electrically communicate with the MR elements.
    • 在一个实施例中,磁头包括位于磁头的面向介质表面的下屏蔽层,位于下屏蔽层上方的至少两个磁阻(MR)元件,每个MR元件沿元件高度方向延伸远离 所述磁头的面向介质的表面,背面布线层位于远离所述磁头的与所述介质相对表面在元件高度方向上的位置的每个所述MR元件的至少一个下层之上,其中所述背面布线 层被配置为与MR元件电通信并且被配置为在读取操作期间单独提取来自每个MR元件的信号,以及位于配置为与MR元件电连通的MR元件之上的上屏蔽层。
    • 110. 发明申请
    • METHODS FOR DETECTING DAMAGE TO MAGNETORESISTIVE SENSORS
    • 检测磁传感器损坏的方法
    • US20110276287A1
    • 2011-11-10
    • US13186341
    • 2011-07-19
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • G06F19/00
    • G11B27/36G11B5/3948G11B5/40G11B2220/90
    • A system and method for detecting a damaged magnetoresistive sensor includes measuring a median DiffPN value of a group of GMR sensors on a module, the sensors characterized as having been deposited on a same wafer and having been lapped as a single unit; comparing the DiffPN values to the median; determining that physical and/or magnetic damage has occurred to an individual sensor if the difference in the DiffPN value of the individual sensor from the median is greater than a statistically predetermined value for the group of sensors; where the difference is at least one times the average of the standard deviations of a large number of normal modules or the average of the standard deviations of a large number of modules, wherein at least the largest and the smallest DiffPN value within the module is not included in the calculation of the module's standard deviation.
    • 用于检测损坏的磁阻传感器的系统和方法包括测量模块上的一组GMR传感器的中值DiffPN值,所述传感器被表征为已经沉积在相同的晶片上并且已被研磨为单个单元; 将DiffPN值与中位数进行比较; 如果单个传感器的DiffPN值与中值的差异大于传感器组的统计预定值,则确定个体传感器已经发生物理和/或磁损伤; 其中差异是大量正常模块的标准偏差的平均值的平均值或大量模块的标准偏差的平均值的至少一倍,其中模块中至少最大和最小的DiffPN值不是 包含在模块标准偏差的计算中。