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    • 1. 发明授权
    • Methods for detecting damage to magnetoresistive sensors
    • 检测磁阻传感器损坏的方法
    • US08810241B2
    • 2014-08-19
    • US13186341
    • 2011-07-19
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • G01R33/12
    • G11B27/36G11B5/3948G11B5/40G11B2220/90
    • A system and method for detecting a damaged magnetoresistive sensor includes measuring a median DiffPN value of a group of GMR sensors on a module, the sensors characterized as having been deposited on a same wafer and having been lapped as a single unit; comparing the DiffPN values to the median; determining that physical and/or magnetic damage has occurred to an individual sensor if the difference in the DiffPN value of the individual sensor from the median is greater than a statistically predetermined value for the group of sensors; where the difference is at least one times the average of the standard deviations of a large number of normal modules or the average of the standard deviations of a large number of modules, wherein at least the largest and the smallest DiffPN value within the module is not included in the calculation of the module's standard deviation.
    • 用于检测损坏的磁阻传感器的系统和方法包括测量模块上的一组GMR传感器的中值DiffPN值,所述传感器被表征为已经沉积在相同的晶片上并且已被研磨为单个单元; 将DiffPN值与中位数进行比较; 如果单个传感器的DiffPN值与中值的差异大于传感器组的统计预定值,则确定个体传感器已经发生物理和/或磁损伤; 其中差异是大量正常模块的标准偏差的平均值的平均值或大量模块的标准偏差的平均值的至少一倍,其中模块中至少最大和最小的DiffPN值不是 包含在模块标准偏差的计算中。
    • 3. 发明申请
    • METHODS FOR DETECTING DAMAGE TO MAGNETORESISTIVE SENSORS
    • 检测磁传感器损坏的方法
    • US20110276287A1
    • 2011-11-10
    • US13186341
    • 2011-07-19
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • Icko E. Tim IbenDarrell G. FollettGuillermo Paniagua
    • G06F19/00
    • G11B27/36G11B5/3948G11B5/40G11B2220/90
    • A system and method for detecting a damaged magnetoresistive sensor includes measuring a median DiffPN value of a group of GMR sensors on a module, the sensors characterized as having been deposited on a same wafer and having been lapped as a single unit; comparing the DiffPN values to the median; determining that physical and/or magnetic damage has occurred to an individual sensor if the difference in the DiffPN value of the individual sensor from the median is greater than a statistically predetermined value for the group of sensors; where the difference is at least one times the average of the standard deviations of a large number of normal modules or the average of the standard deviations of a large number of modules, wherein at least the largest and the smallest DiffPN value within the module is not included in the calculation of the module's standard deviation.
    • 用于检测损坏的磁阻传感器的系统和方法包括测量模块上的一组GMR传感器的中值DiffPN值,所述传感器被表征为已经沉积在相同的晶片上并且已被研磨为单个单元; 将DiffPN值与中位数进行比较; 如果单个传感器的DiffPN值与中值的差异大于传感器组的统计预定值,则确定个体传感器已经发生物理和/或磁损伤; 其中差异是大量正常模块的标准偏差的平均值的平均值或大量模块的标准偏差的平均值的至少一倍,其中模块中至少最大和最小的DiffPN值不是 包含在模块标准偏差的计算中。