会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 102. 发明授权
    • Filtered cathodic arc deposition method and apparatus
    • 过滤阴极电弧沉积方法和装置
    • US07252745B2
    • 2007-08-07
    • US10713529
    • 2003-11-13
    • Vladimir I. Gorokhovsky
    • Vladimir I. Gorokhovsky
    • C23C14/34
    • C23C14/0605C23C14/022C23C14/0641C23C14/0647C23C14/16C23C14/325C23C14/355C23C14/48C23C16/36H01J37/32055H01J37/3266
    • An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow. In a further embodiment a second arc source is activated to coat the substrates while a first arc source is activated, and the magnetic deflecting system for the first arc source is deactivated to confine plasma to the cathode chamber but permit electrons to flow into the coating chamber for plasma immersed treatment of the substrates. A load lock shutter may be provided between the plasma duct and the coating chamber further confine the plasma from the first arc source.
    • 一种用于在真空中施加涂层的装置,包括由与第一等离子体源连通的磁偏转系统所围绕的等离子体管道和其中衬底保持器布置在等离子体源的光轴之外的涂覆室,至少具有 一个偏转电极安装在等离子体管道的一个或多个壁上。 在一个实施例中,隔离的排斥或排斥电极位于偏转电极下游的等离子体管道中,其中偏转磁场的切向分量最强,连接到电流源的正极,其允许隔离电极电流变化 独立地增加到高于阳极电流的水平。 偏转电极可以用作吸气泵,以提高泵送效率并从金属离子流中转移金属离子。 在另一实施例中,激活第二电弧源以在第一电弧源被激活时涂覆基板,并且用于第一电弧源的磁偏转系统被去激活以将等离子体限制到阴极室,但允许电子流入涂覆室 用于等离子体浸渍处理的基板。 可以在等离子体管道和涂覆室之间设置负载锁定闸门,进一步限制来自第一电弧源的等离子体。
    • 105. 发明授权
    • Process for reducing particle formation during etching
    • 在蚀刻期间减少颗粒形成的方法
    • US07182880B2
    • 2007-02-27
    • US10813785
    • 2004-03-30
    • Wen-Chi ChouKuang-Ya Li
    • Wen-Chi ChouKuang-Ya Li
    • B44C1/22
    • H01L21/67069B08B7/0035C23C14/022H01J37/32082H01J2237/022H01L21/67253
    • A process for reducing the formation of potential device-contaminating particles in a process chamber, particularly an etch chamber or a pre-clean chamber used to pre-clean substrates prior to a PVD or other process. The process chamber conventionally includes multiple antennae, the purpose of which is to conduct bias power from a bias power source to a substrate supported on a pedestal assembly. According to the process of the invention, the antennae are removed from the pedestal assembly. Accordingly, the antennae, no longer present in the chamber during substrate processing, are capable of neither generating potential device-contaminating particles nor causing electrical arcing between the pedestal assembly and the chamber wall or other elements in the process chamber, leading to operational power loss.
    • 一种用于减少处理室中的潜在器件污染颗粒形成的方法,特别是用于在PVD或其它工艺之前预清洁衬底的蚀刻室或预清洁室。 处理室通常包括多个天线,其目的是将偏置功率从偏压电源传导到支撑在基座组件上的基板。 根据本发明的方法,天线从基座组件移除。 因此,在衬底处理期间不再存在于腔室中的天线能够既不会产生潜在的器件污染粒子,也不会在基座组件与腔室壁或处理室中的其它元件之间产生电弧,导致操作功率损耗 。
    • 109. 发明申请
    • Insulated pallet in cleaning chamber
    • 绝缘托盘在清洁室内
    • US20060231389A1
    • 2006-10-19
    • US11107111
    • 2005-04-14
    • Ravi MullapudiDean Smith
    • Ravi MullapudiDean Smith
    • C23C14/00
    • C23C14/022C23C14/505C23C14/56H01J37/32743H01L21/67069H01L21/67109
    • A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.
    • 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。