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101. 发明授权

US5953278A Data sequencing and registering in a four bit pre-fetch SDRAM 失效
标题翻译：数据排序和注册在四位预取SDRAM
公开(公告)号：US5953278A
公开(公告)日：1999-09-14
申请号：US891596
申请日：1997-07-11
申请人： Hugh P. McAdams , Paulette Thurston , Masayuki Nakamura
发明人： Hugh P. McAdams , Paulette Thurston , Masayuki Nakamura
IPC分类号： G11C7/10 , G11C11/4096 , G11C7/00
CPC分类号： G11C7/1042 , G11C11/4096 , G11C7/1018 , G11C7/1048 , G11C7/1072
摘要： A memory device uses data circuitry to connect data lines extending from memory cell arrays to data signal bond pads. The data circuitry connect four data lines to one data signal bond pad. The data circuitry include data sequencer circuits, parallel data in circuits and serial data register circuits. The parallel data in circuits operate to write data to the memory device. The serial data register circuits operate to read and write data. The data sequencer circuits operate to connect the data lines to the bond pad in a selected order in a four bit pre-fetch architecture for normal and interleaved data modes.
摘要翻译：存储器件使用数据电路将从存储单元阵列延伸的数据线连接到数据信号焊盘。数据电路将四条数据线连接到一个数据信号焊盘。数据电路包括数据定序器电路，电路中的并行数据和串行数据寄存器电路。电路中的并行数据用于将数据写入存储器件。串行数据寄存器电路用于读取和写入数据。数据定序器电路用于以正常和交织的数据模式的四位预取架构中的所选顺序将数据线连接到接合焊盘。

102. 发明授权

US5905685A Dynamic memory 失效
标题翻译：动态内存
公开(公告)号：US5905685A
公开(公告)日：1999-05-18
申请号：US951734
申请日：1997-10-15
申请人： Masayuki Nakamura , Masatoshi Hasegawa , Seiji Narui , Yousuke Tanaka , Shinichi Miyatake , Shuichi Kubouchi , Kazuhiko Kajigaya
发明人： Masayuki Nakamura , Masatoshi Hasegawa , Seiji Narui , Yousuke Tanaka , Shinichi Miyatake , Shuichi Kubouchi , Kazuhiko Kajigaya
IPC分类号： G11C11/407 , G11C11/401 , G11C11/4074 , G11C11/408 , G11C11/409 , H01L21/8242 , H01L27/108 , G11C7/00
CPC分类号： G11C11/4074 , G11C11/408 , G11C11/4087
摘要： In a dynamic RAM having a memory cell array in which a dynamic memory cell is arranged at an intersection between a word line and one of a pair of bit lines, a select level signal corresponding to a supply voltage and an unselect level signal corresponding to a negative potential lower than circuit ground potential are supplied to the word line. A signal of a memory cell read to the pair of bit lines by a sense amplifier that operates on the circuit ground potential and an internal voltage formed by dropping the supply voltage by an amount equivalent to the threshold voltage of the address select MOSFET is amplified. The dynamic RAM has an oscillator that receives the supply voltage and circuit ground potential and a circuit that receives an oscillation pulse generated by the oscillator to generate the negative potential.
摘要翻译：在具有存储单元阵列的动态RAM中，其中动态存储单元布置在字线和一对位线中的一个位线之间的交叉点处，对应于电源电压的选择电平信号和对应于低于电路接地电位的负电位被提供给字线。通过由电路接地电位进行工作的读出放大器对一对位线读取的存储单元的信号和通过将电源电压降低等于地址选择MOSFET的阈值电压的量而形成的内部电压被放大。动态RAM具有接收电源电压和电路接地电位的振荡器，以及接收由振荡器产生的振荡脉冲以产生负电位的电路。

103. 发明授权

US5835445A Semiconductor integrated circuit device having a synchronous output function with a plurality of external clocks 失效
标题翻译：具有同步输出功能的多个外部时钟的半导体集成电路器件
公开(公告)号：US5835445A
公开(公告)日：1998-11-10
申请号：US714465
申请日：1996-09-16
申请人： Masayuki Nakamura
发明人： Masayuki Nakamura
IPC分类号： G11C11/407 , G11C5/06 , G11C7/00 , G11C7/10 , G11C7/22 , G11C8/00 , G11C11/34 , G11C11/401 , G11C29/00
CPC分类号： G11C7/1072 , G11C29/80 , G11C29/84 , G11C7/22
摘要： The present invention is a method and apparatus for reducing the effects of transmission line impedance on the clock signal in a semiconductor device. In a departure from the prior art, the present invention includes multiple clock inputs, located near the device's synchronous input/output ports, reducing the maximum distance that any single internal clock signal must travel and thereby reducing the amount of delay caused by the effects of transmission line impedance on the internal clock signals. The present invention also includes a read only memory ("ROM") to improve the speed of the device and to provide additional space in the highly congested areas between the column decoder and address ports of the device. The ROM is programmed to decipher row address for information that would be beneficial in a redundant column access.
摘要翻译：本发明是一种降低半导体器件中传输线阻抗对时钟信号的影响的方法和装置。与现有技术不同，本发明包括位于设备同步输入/输出端口附近的多个时钟输入，减少了任何单个内部时钟信号必须行进的最大距离，从而减少了由于传输线阻抗对内部时钟信号的影响。本发明还包括一个只读存储器（“ROM”），用于提高设备的速度并且在列解码器和设备的地址端口之间的高度拥塞的区域中提供额外的空间。 ROM被编程为解密行地址以获得在冗余列访问中有益的信息。

104. 发明授权

US5796187A Electric actuator 失效
标题翻译：电动执行器
公开(公告)号：US5796187A
公开(公告)日：1998-08-18
申请号：US855448
申请日：1997-05-13
申请人： Shigekazu Nagai , Shuuzou Sakurai , Masayuki Nakamura
发明人： Shigekazu Nagai , Shuuzou Sakurai , Masayuki Nakamura
IPC分类号： H02K7/06 , B23Q5/40 , B23Q11/08 , F16H25/20
CPC分类号： B23Q5/40 , B23Q11/08 , F16H25/20 , F16H2025/2075
摘要： Disclosed is an electric actuator which makes it possible to prevent a driving force-transmitting shaft from adhesion of dust or the like, and eliminate any fear for deterioration of driving force-transmitting function. A hole is defined in a body which is arranged to extend in a vertical direction. A motor is secured to one end of the body. A feed screw is coaxially connected to a rotary shaft of the motor. The feed screw is rotatably supported by angular contact ball bearings. A feed nut is engaged with the feed screw. The hole is slidably engaged with a cylinder member which is formed to be cylindrical and lengthy. The cylinder member surrounds the feed screw. The feed nut is secured to one end of the cylinder member, and a bracket is secured to the other end thereof.
摘要翻译：公开了一种电致动器，其能够防止驱动力传递轴粘附灰尘等，并且消除对驱动力传递功能的劣化的任何恐惧。在主体中限定了一个孔，该主体被布置为在垂直方向上延伸。马达固定在身体的一端。进给螺杆与电机的旋转轴同轴连接。进给螺杆由角接触球轴承可转动地支承。进给螺母与进给螺杆啮合。该孔与形成为圆柱形和冗长的圆筒构件可滑动地接合。气缸构件围绕进给螺杆。进给螺母固定在缸体的一端，支架固定在其另一端。

105. 发明授权

US5276648A Testing method for a semiconductor memory device 失效
标题翻译：半导体存储器件的测试方法
公开(公告)号：US5276648A
公开(公告)日：1994-01-04
申请号：US818274
申请日：1992-01-08
申请人： Kazumasa Yanagisawa , Tatsuyuki Ohta , Tetsu Udagawa , Kyoko Ishii , Hitoshi Miwa , Atsushi Nozoe , Masayuki Nakamura , Tetsurou Matsumoto , Yoshitaka Kinoshita , Yoshiaki Ouchi , Hiromi Tsukada , Shoji Wada , Kazuo Mihashi , Yutaka Kobayashi , Goro Kitsukawa
发明人： Kazumasa Yanagisawa , Tatsuyuki Ohta , Tetsu Udagawa , Kyoko Ishii , Hitoshi Miwa , Atsushi Nozoe , Masayuki Nakamura , Tetsurou Matsumoto , Yoshitaka Kinoshita , Yoshiaki Ouchi , Hiromi Tsukada , Shoji Wada , Kazuo Mihashi , Yutaka Kobayashi , Goro Kitsukawa
IPC分类号： G11C11/409 , G05F3/24 , G11C11/401 , G11C11/403 , G11C11/407 , G11C11/408 , G11C29/00 , G11C29/28 , G11C29/34 , G11C29/46 , G11C29/50 , H01L21/82 , H01L21/822 , H01L21/8242 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/10 , H01L27/108 , G11C13/00
CPC分类号： G11C29/80 , G11C11/4085 , G11C29/28 , G11C29/34 , G11C29/46 , G11C29/50 , G11C11/401
摘要： A Bi.CMOS semiconductor memory device is provided which includes an arrangement to simultaneously select a plurality of memory cells, followed by using a 3 bit Z addressing arrangement to determine a read or write operation for the simultaneously selected memory cells. To speed up the word line selection, a static selection type operation is used with the word line selecting voltage being greater than signal amplitude of the data lines during the write operation. Also, to speed up the read operation, separate common I/O lines are provided for the read and write operations. Read signals are transmitted as current signals, and then converted to voltage signals for improving reading speed. Also, improved arrangements are provided for resistance structure, logic circuitry, input circuitry, fuse cutting circuitry, drive circuitry, power circuitry, electrostatic protection circuitry, layout structure and testing methods for the semiconductor device.
摘要翻译：提供了一种Bi.CMOS半导体存储器件，其包括同时选择多个存储器单元的布置，随后使用3位Z寻址布置来确定对所选择的存储单元的读取或写入操作。为了加速字线选择，在写入操作期间使用静态选择类型操作，字线选择电压大于数据线的信号幅度。此外，为了加快读取操作，提供单独的公共I / O线用于读取和写入操作。读取信号作为电流信号传输，然后转换为电压信号，以提高读取速度。此外，为电阻结构，逻辑电路，输入电路，熔丝切割电路，驱动电路，电源电路，静电保护电路，布局结构和半导体器件的测试方法提供了改进的布置。

106. 发明授权

US5260257A Thermal transfer sheet 失效
标题翻译：热转印片
公开(公告)号：US5260257A
公开(公告)日：1993-11-09
申请号：US841640
申请日：1992-02-27
申请人： Hiroshi Eguchi , Koumei Kafuku , Masayuki Nakamura
发明人： Hiroshi Eguchi , Koumei Kafuku , Masayuki Nakamura
IPC分类号： B41M5/39 , C09B53/02 , B41M5/035 , B41M5/38
CPC分类号： B41M5/39 , C09B53/02 , Y10S428/913 , Y10S428/914
摘要： A thermal transfer sheet including a substrate sheet and a dye supporting layer formed on one surface of said substrate sheet, characterized in that the dye contained in said dye supporting layer is represented by the following general formula ##STR1## wherein R.sub.1 stands for a substituted or unsubstituted alkyl group, cycloalkyl group, aralkyl group or aryl group or an atom or atom group which combines with X to form a five- or six-membered ring; R.sub.2 stands for a substituted or unsubstituted alkyl group, a cycloalkyl group, an aralkyl group or an aryl group, provided that R.sub.1 and R.sub.2 may combine with each other to form a five- or six-membered ring which may have an oxygen or nitrogen atom; R.sub.3 stands for a hydrogen atom, a halogen atom, a cyano group, a substituted or unsubstituted alkyl group, cycloalkyl group, alkoxy group, aralkyl group, aryl group, acyl group, acylamino group, sulfonylamino group, ureido group, carbamoyl group, sulfamoyl group or amino group; R.sub.4 stands for a substituted or unsubstituted three- to five-membered cycloalkyl group or thienyl group bonded at the .beta.-position, or a substituted or unsubstituted five- or six-membered cycloalkenyl group, or a group represented by the following formula ##STR2## R.sub.5 and R.sub.6 which may be the same or different stand for a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, alkoxy group, acylamino group, sulfonylamino group or ureido group; X stands for a hydrogen atom or an atom or atom group which combines with R.sub.1 to form a five- or six-membered ring; n is 1 or 2; R.sub.7 and R.sub.8 stand for a hydrogen atom, a halogen atom or a lower alkyl group; Z stand for CH.sub.2, O, S or NR.sub.9 ; and R.sub.9 stands for a hydrogen atom or a lower alkyl group.
摘要翻译：一种热转印片，其包括在所述基片的一个表面上形成的基片和染料支持层，其特征在于，所述染料支持层中所含的染料由以下通式表示：其中R1代表取代或未取代的烷基，环烷基，芳烷基或芳基或与X结合形成五元或六元环的原子或原子基团; R 2表示取代或未取代的烷基，环烷基，芳烷基或芳基，条件是R 1和R 2可以彼此结合形成可具有氧或氮原子的五元或六元环 ; R 3表示氢原子，卤素原子，氰基，取代或未取代的烷基，环烷基，烷氧基，芳烷基，芳基，酰基，酰氨基，磺酰基氨基，脲基，氨基甲酰基，氨磺酰基团或氨基; R4表示在β-位上键合的取代或未取代的三元至五元环烷基或噻吩基，或取代或未取代的五元或六元环烯基或由下式表示的基团可以相同或不同的R5和R6代表氢原子，卤素原子，取代或未取代的烷基，烷氧基，酰氨基，磺酰基氨基或脲基; X代表与R1结合以形成五元或六元环的氢原子或原子或原子团; n为1或2; R7和R8代表氢原子，卤原子或低级烷基; Z代表CH2，O，S或NR9; R9代表氢原子或低级烷基。

107. 发明授权

US5150325A Bi-CMOS semiconductor memory device, including improved layout structure and testing method 失效
标题翻译： Bi-CMOS半导体存储器件，包括改进的布局结构和测试方法
公开(公告)号：US5150325A
公开(公告)日：1992-09-22
申请号：US496227
申请日：1990-03-20
申请人： Kazumasa Yanagisawa , Tatsuyuki Ohta , Tetsu Udagawa , Kyoko Ishii , Hitoshi Miwa , Atsushi Nozoe , Masayuki Nakamura , Tetsurou Matsumoto , Yoshitaka Kinoshita , Yoshiaki Ouchi , Hiromi Tsukada , Shoji Wada , Kazuo Mihashi , Yutaka Kobayashi , Goro Kitsukawa
发明人： Kazumasa Yanagisawa , Tatsuyuki Ohta , Tetsu Udagawa , Kyoko Ishii , Hitoshi Miwa , Atsushi Nozoe , Masayuki Nakamura , Tetsurou Matsumoto , Yoshitaka Kinoshita , Yoshiaki Ouchi , Hiromi Tsukada , Shoji Wada , Kazuo Mihashi , Yutaka Kobayashi , Goro Kitsukawa
IPC分类号： G11C11/409 , G05F3/24 , G11C11/401 , G11C11/403 , G11C11/407 , G11C11/408 , G11C29/00 , G11C29/28 , G11C29/34 , G11C29/46 , G11C29/50 , H01L21/82 , H01L21/822 , H01L21/8242 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/10 , H01L27/108
CPC分类号： G11C29/80 , G11C11/4085 , G11C29/28 , G11C29/34 , G11C29/46 , G11C29/50 , G11C11/401
摘要： A Bi.CMOS semiconductor memory device is provided which includes an arrangement to simultaneously select a plurality of memory cells, followed by using a 3 bit Z addressing arrangement to determine a read or write operation for the simultaneously selected memory cells. To speed up the word line selection, a static selection type operation is used with the word line selecting voltage being greater than signal amplitude of the data lines during the write operation. Also, to speed up the read operation, separate common I/O lines are provided for the read and write operations. Read signals are transmitted as curent signals, and then converted to voltage signals for improving reading speed. Also, improved arrangements are provided for resistance structure, logic circuitry, input circuitry, fuse cutting circuitry, drive circuitry, power circuitry, electrostatic protection circuitry, layout structure and testing methods for the semiconductor device.
摘要翻译：提供了一种Bi.CMOS半导体存储器件，其包括同时选择多个存储器单元的布置，随后使用3位Z寻址布置来确定对所选择的存储单元的读取或写入操作。为了加速字线选择，在写入操作期间使用静态选择类型操作，字线选择电压大于数据线的信号幅度。此外，为了加快读取操作，提供单独的公共I / O线用于读取和写入操作。读信号作为固化信号传输，然后转换为电压信号以提高读取速度。此外，为电阻结构，逻辑电路，输入电路，熔丝切割电路，驱动电路，电源电路，静电保护电路，布局结构和半导体器件的测试方法提供了改进的布置。

108. 发明授权

US5117953A Hydraulically controllable transmission 失效
标题翻译：液压可控变速器
公开(公告)号：US5117953A
公开(公告)日：1992-06-02
申请号：US556338
申请日：1990-07-20
申请人： Satoshi Machida , Muneji Okamoto , Akio Hattori , Masayuki Nakamura
发明人： Satoshi Machida , Muneji Okamoto , Akio Hattori , Masayuki Nakamura
IPC分类号： B60W30/18 , F16D48/06
CPC分类号： B60W30/18 , B60W10/02 , B60W10/10 , F16D48/02 , B60Y2200/22 , F16D2048/0209 , F16D2048/0263 , F16D2048/0272 , F16D2500/1024 , F16D2500/1045 , F16D2500/5014 , F16D2500/525 , F16D2500/70406 , F16D2500/7041
摘要： A hydraulically operable transmission comprises a hydraulic clutch, a change speed control valve, change speed actuators controllable by the control valve, a pilot oil line for varying pressure states in response to operation of the actuators, an oil supply line extending to the hydraulic clutch, a clutch control valve operable with a pilot pressure applied from the pilot oil line to close the oil supply line, and a pressure buildup device mounted on the oil supply line. The pressure buildup device includes an oil chamber for producing predetermined pressure increase characteristics with a pilot pressure applied from the oil supply line and a spring load, a drain line extending from the oil chamber, and a drain control valve mounted on the drain line for opening and closing the drain line in response to the pilot pressure applied from the pilot oil line.
摘要翻译：液压可操作的变速器包括液压离合器，变速控制阀，由控制阀控制的变速致动器，用于响应于致动器的操作而改变压力状态的先导油管线，延伸到液压离合器的供油管线，离合器控制阀，其可从先导油管线施加的先导压力操作，以关闭供油管线;以及压力累积装置，安装在供油管路上。压力累积装置包括用于通过从供油管线施加的先导压力和弹簧负载产生预定的增压特性的油室，从油室延伸的排水管，以及安装在排水管路上的排水控制阀，用于打开并且响应于从先导油管线施加的先导压力而关闭排水管线。

109. 发明授权

US5102859A Heat transfer sheet 失效
标题翻译：传热片
公开(公告)号：US5102859A
公开(公告)日：1992-04-07
申请号：US604296
申请日：1990-10-26
申请人： Jumpei Kanto , Masayuki Nakamura
发明人： Jumpei Kanto , Masayuki Nakamura
IPC分类号： B41M5/385 , B41M5/035 , B41M5/26 , B41M5/388 , B41M5/39
CPC分类号： B41M5/39 , Y10S428/913 , Y10S428/914
摘要： A heat transfer sheet comprising a substrate sheet and a dye carrier layer formed on its one major side, characterized in that a dye included in said dye carrier layer is expressed by the following general formula (I): ##STR1## wherein: R.sub.1 stands for a substituted or unsubstituted alkyl, cycloalkyl, aralkyl or aryl group, or an atom or atomic gorup which forms a five- or six-membered ring with Y,R.sub.2 denotes a substituted or unsubstituted alkyl, cycloalkyl, aralkyl or aryl group,said R.sub.1 and R.sub.2 may form together a five- or six-membered ring which may include an oxygen, nitrogen or sulfur atom,R.sub.3 represents a hydrogen atom, a halogen atom or a cyano group, or an alkyl, cycloalkyl, aryl, aralkyl, alkoxy, alkylthio, aryloxy, arylthio, acylamino, sulfonylamino, ureido, carbamoyl, sulfamoyl, acyl or amino group which may contain a substituent,X.sub.1 represents a hydrogen atom, a halogen atom or a cyano group, or an alkyl, cycloalkyl, alkoxy, aryl, aralkyl, acylamino, sulfonylamino, ureido, carbamoyl, sulfamoyl, acyl or amino group which may contain a substituent,X.sub.2 represents a hydrogen atom, a halogen atom or a cyano, nitro, alkyl, alkoxy, aryl, aralkyl, acylamino, ureido, acyl or amino group,Y stands for a hydrogen atom, or an atom or atomic group which form a five- or six-membered ring with R.sub.1, andm and n each are 1 or 2.
摘要翻译：一种传热片，其特征在于，包括基片和在其一侧形成的染料载体层，其特征在于，所述染料载体层中包含的染料由下列通式（I）表示：其中： R1代表取代或未取代的烷基，环烷基，芳烷基或芳基，或与Y形成五元或六元环的原子或原子，R2表示取代或未取代的烷基，环烷基，芳烷基或芳基，所述R 1和R 2可以一起形成可包括氧，氮或硫原子的五元或六元环，R 3表示氢原子，卤素原子或氰基，或烷基，环烷基，芳基，芳烷基，烷氧基，烷硫基，芳氧基，芳硫基，酰氨基，磺酰氨基，脲基，氨基甲酰基，氨磺酰基，酰基或可含有取代基的氨基，X1表示氢原子，卤素原子或氰基，或烷基，环烷基，烷氧基，芳基，芳烷基，酰氨基，磺酰基氨基，脲基，氨基甲酰基，氨磺酰基，酰基或可含有取代基的氨基，X2表示氢原子，卤素原子或氰基，硝基，烷基，烷氧基，芳基，芳烷基，酰氨基，脲基，酰基或氨基，Y表示氢原子或与R1形成五元或六元环的原子或原子团，m和n各自为1或2。

110. 发明授权

US4990484A Heat transfer sheets 失效
标题翻译：换热片
公开(公告)号：US4990484A
公开(公告)日：1991-02-05
申请号：US404408
申请日：1989-09-08
申请人： Masayuki Nakamura
发明人： Masayuki Nakamura
IPC分类号： B41M5/035 , B41M5/26 , B41M5/39 , C09B53/02
CPC分类号： B41M5/39 , C09B53/02 , Y10S428/913 , Y10S428/914 , Y10T428/31786
摘要： A heat transfer sheet is provided, which includes a base sheet and a dye carrier layer formed on one side of said base sheet, said dye carrier layer carrying a mixture of at least one dye expressed by the following general formula (I) with at least one other sublimable dye showing a maximum adsorption wavelength at from 560 to 700 nm and having a molecular weight of at least 345: ##STR1## wherein: R.sub.1 to R.sub.4 each are a C.sub.1 to C.sub.6 alkyl group, a cycloalkyl group or a phenyl group, provided that R.sub.2 may be a hydrogen atom or an alkoxy group and R.sub.3 and R.sub.4 may form together a ring.

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