专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20120282754A1 Methods of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 有权
标题翻译：形成具有包含多种金属氧化物的材料的介电区域的电容器的方法
公开(公告)号：US20120282754A1
公开(公告)日：2012-11-08
申请号：US13550340
申请日：2012-07-16
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
IPC分类号： H01L21/02
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译：公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

102. 发明申请

US20120241714A1 Non-Volatile Resistive Oxide Memory Cells And Methods Of Forming Non-Volatile Resistive Oxide Memory Cells 有权
标题翻译：非挥发性电阻氧化物记忆单元和形成非易失性电阻氧化物记忆单元的方法
公开(公告)号：US20120241714A1
公开(公告)日：2012-09-27
申请号：US13488190
申请日：2012-06-04
申请人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
发明人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material. The forming thereof includes etching through the conductive material to form opposing laterally outermost conductive edges of said conductive material in the one planar cross section at the conclusion of said etching which are received laterally outward of the opposing laterally outermost edges of the first conductive electrode in the one planar cross section.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。第一导电电极在一个平面横截面中具有垂直最外表面和在最外表面处的相对的横向最外边缘。在第一导电电极上形成包含多电阻态金属氧化物的材料。导电材料沉积在多电阻状态的含金属氧化物的材料上。包含导电材料的存储单元的第二导电电极被接收在多电阻状态的含金属氧化物的材料上。其形成包括通过导电材料的蚀刻，以在所述蚀刻结束时在一个平面截面中形成所述导电材料的相对的横向最外面的导电边缘，其在第一导电电极的相对的横向最外边缘的横向外侧接收一个平面截面。

103. 发明授权

US08211743B2 Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes 有权
标题翻译：在导电电极之间形成具有多电阻状态材料的非易失性存储单元的方法
公开(公告)号：US08211743B2
公开(公告)日：2012-07-03
申请号：US12114096
申请日：2008-05-02
申请人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
发明人： Bhaskar Srinivasan , Gurtej Sandhu , John Smythe
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material. The forming thereof includes etching through the conductive material to form opposing laterally outermost conductive edges of said conductive material in the one planar cross section at the conclusion of said etching which are received laterally outward of the opposing laterally outermost edges of the first conductive electrode in the one planar cross section.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。第一导电电极在一个平面横截面中具有垂直最外表面和在最外表面处的相对的横向最外边缘。在第一导电电极上形成包含多电阻态金属氧化物的材料。导电材料沉积在多电阻状态的含金属氧化物的材料上。包含导电材料的存储单元的第二导电电极被接收在多电阻状态的含金属氧化物的材料上。其形成包括通过导电材料的蚀刻，以在所述蚀刻结束时在一个平面截面中形成所述导电材料的相对的横向最外面的导电边缘，其在第一导电电极的相对的横向最外边缘的横向外侧接收一个平面截面。

104. 发明授权

US08114468B2 Methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US08114468B2
公开(公告)日：2012-02-14
申请号：US12141559
申请日：2008-06-18
申请人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
发明人： Gurtej Sandhu , John Smythe , Bhaskar Srinivasan
IPC分类号： B05D5/12 , B28B19/00 , B29B15/00 , C23C18/00 , C23C20/00 , C23C24/00 , C23C26/00 , C23C28/00 , C23C30/00 , H01C17/06 , H05K3/00 , H01L47/00 , H01L29/08 , H01L35/24 , H01L51/00 , H01L29/02 , H01L21/00 , H01L21/16 , H01L21/20 , H01L21/36 , G11C11/00
CPC分类号： H01L27/101 , H01L21/0271 , Y10S438/947
摘要： A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.
摘要翻译：形成非易失性电阻氧化物存储器阵列的方法包括在衬底上形成多个导电字线或导电位线。含金属氧化物的材料形成在多条所述一条字线或位线中。在多个所述一条字线或位线之间提供一系列细长的沟槽。多个自组装嵌段共聚物线形成在沟槽中的各个内，与沟槽侧壁之间对准并且在沟槽侧壁之间形成。从所述多个自组装嵌段共聚物线路提供多个导电字线或导电位线，以形成包含所述金属氧化物的材料的单独可编程的结，其中字线和位线彼此交叉。

105. 发明申请

US20110237042A1 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions 有权
标题翻译：在半导体结构形成过程中利用微波辐射的方法
公开(公告)号：US20110237042A1
公开(公告)日：2011-09-29
申请号：US13154598
申请日：2011-06-07
申请人： John Smythe , Bhaskar Srinivasan , Ming Zhang
发明人： John Smythe , Bhaskar Srinivasan , Ming Zhang
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
摘要翻译：一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

106. 发明申请

US20110210423A1 INTEGRATED CIRCUIT DEVICES HAVING A STRONTIUM RUTHENIUM OXIDE INTERFACE 有权
标题翻译：具有氧化钌界面的集成电路设备
公开(公告)号：US20110210423A1
公开(公告)日：2011-09-01
申请号：US13103162
申请日：2011-05-09
申请人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
发明人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

107. 发明授权

US08010091B2 System, method and apparatus employing tone and/or tone patterns to indicate the message type in wireless sensor networks 有权
标题翻译：使用音调和/或音调模式的系统，方法和装置来指示无线传感器网络中的消息类型
公开(公告)号：US08010091B2
公开(公告)日：2011-08-30
申请号：US12725076
申请日：2010-03-16
申请人： Abtin Keshavarzian , Lakshmi Venkatraman , Dhananjay Lal , Arati Manjeshwar , Bhaskar Srinivasan
发明人： Abtin Keshavarzian , Lakshmi Venkatraman , Dhananjay Lal , Arati Manjeshwar , Bhaskar Srinivasan
IPC分类号： H04L12/28 , H04L29/08 , H04M3/42
CPC分类号： H04M3/02 , H04Q11/02 , H04Q2213/13098 , H04W52/0235 , H04W88/027 , Y02D70/00
摘要： A system and method for operating a wireless network provides for sending a wakeup tone, periodically waking up from a sleep mode to listen for the wakeup tone, upon receiving the wakeup tone, listening for at least one second tone, the at least one second tone being one of (i) a tone in a frequency different from the wakeup tone and (ii) a pattern of tones including at least one frequency different from the wakeup tone, and upon receiving the at least one second tone, performing an action based on the at least one second tone.
摘要翻译：用于操作无线网络的系统和方法提供发送唤醒音，周期性地从睡眠模式唤醒以监听唤醒音，接收到唤醒音，收听至少一个第二音调，至少一个第二音调是（i）不同于唤醒音的频率的音调和（ii）包括与唤醒音不同的至少一个频率的音调模式，并且在接收到至少一个第二音调时，基于至少一个第二音调。

108. 发明授权

US07892964B2 Vapor deposition methods for forming a metal-containing layer on a substrate 有权
标题翻译：在基板上形成含金属层的气相沉积方法
公开(公告)号：US07892964B2
公开(公告)日：2011-02-22
申请号：US11705992
申请日：2007-02-14
申请人： Bhaskar Srinivasan , John Smythe
发明人： Bhaskar Srinivasan , John Smythe
IPC分类号： H01L21/4763
CPC分类号： C23C16/405 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01G4/085 , H01G4/1227 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31691
摘要： Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
摘要翻译：本文所述的原子层沉积方法可有利地用于在基底上形成含金属的层。例如，如本文所述的某些方法可以形成具有低碳含量（例如低碳酸锶含量）的钛酸锶层，其可导致具有高介电常数的层。

109. 发明申请

US20110021001A1 Vapor Deposition Methods for Forming a Metal-Containing Layer on a Substrate 有权
标题翻译：在基材上形成含金属层的气相沉积方法
公开(公告)号：US20110021001A1
公开(公告)日：2011-01-27
申请号：US12893807
申请日：2010-09-29
申请人： Bhaskar Srinivasan , John Smythe
发明人： Bhaskar Srinivasan , John Smythe
IPC分类号： H01L21/02
CPC分类号： C23C16/405 , C23C16/409 , C23C16/45529 , C23C16/45531 , H01G4/085 , H01G4/1227 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31691
摘要： Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.
摘要翻译：本文所述的原子层沉积方法可有利地用于在基底上形成含金属的层。例如，如本文所述的某些方法可以形成具有低碳含量（例如低碳酸锶含量）的钛酸锶层，其可导致具有高介电常数的层。

110. 发明申请

US20100315981A1 SYSTEM, METHOD AND APPARATUS EMPLOYING TONE AND/OR TONE PATTERNS TO INDICATE THE MESSAGE TYPE IN WIRELESS SENSOR NETWORKS 有权
标题翻译：系统，方法和设备使用音调和/或音色图案来显示无线传感器网络中的消息类型
公开(公告)号：US20100315981A1
公开(公告)日：2010-12-16
申请号：US12725076
申请日：2010-03-16
申请人： Abtin Keshavarzian , Lakshmi Venkatraman , Dhananjay Lal , Arati Manjeshwar , Bhaskar Srinivasan
发明人： Abtin Keshavarzian , Lakshmi Venkatraman , Dhananjay Lal , Arati Manjeshwar , Bhaskar Srinivasan
IPC分类号： H04W52/02
CPC分类号： H04M3/02 , H04Q11/02 , H04Q2213/13098 , H04W52/0235 , H04W88/027 , Y02D70/00
摘要： A system and method for operating a wireless network provides for sending a wakeup tone, periodically waking up from a sleep mode to listen for the wakeup tone, upon receiving the wakeup tone, listening for at least one second tone, the at least one second tone being one of (i) a tone in a frequency different from the wakeup tone and (ii) a pattern of tones including at least one frequency different from the wakeup tone, and upon receiving the at least one second tone, performing an action based on the at least one second tone.
摘要翻译：用于操作无线网络的系统和方法提供发送唤醒音，周期性地从睡眠模式唤醒以监听唤醒音，接收到唤醒音，收听至少一个第二音调，至少一个第二音调是（i）不同于唤醒音的频率的音调和（ii）包括与唤醒音不同的至少一个频率的音调模式，并且在接收到至少一个第二音调时，基于至少一个第二音调。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式