专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明申请

US20120275870A1 SURFACE-COATED CUTTING TOOL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：表面涂层切割工具及其制造方法
公开(公告)号：US20120275870A1
公开(公告)日：2012-11-01
申请号：US13392713
申请日：2011-07-04
申请人： Anongsack Paseuth , Yoshio Okada , Hideaki Kanaoka , Chikako Kojima , Erika Iwai
发明人： Anongsack Paseuth , Yoshio Okada , Hideaki Kanaoka , Chikako Kojima , Erika Iwai
IPC分类号： B26D7/00 , B23P15/28
CPC分类号： C23C30/005 , C23C16/0272 , C23C16/36 , C23C16/52 , C23C28/042 , C23C28/044 , Y10T407/27 , Y10T428/265
摘要： A surface-coated cutting tool according to the present invention includes a base material and a coating film formed on the base material. The coating film includes at least one TiCN layer. The TiCN layer has a columnar crystal region. The columnar crystal region is characterized by having a composition of TiCxNy (in which 0.65≦x/(x+y)≦0.90) and having a (422) plane having a plane spacing of 0.8765 Å to 0.8790 Å.
摘要翻译：根据本发明的表面涂层切削工具包括基材和形成在基材上的涂膜。涂膜包括至少一个TiCN层。 TiCN层具有柱状晶体区域。柱状晶体区域的特征在于具有TiC x N y的组成（其中0.65和nlE; x /（x + y）＆nlE; 0.90）并且具有平面间距为0.8765至0.8790的（422）面。

102. 发明授权

US08030341B2 Dmt-derivative compounds and related compositions and methods of use 失效
标题翻译： Dmt衍生化合物及相关组合物和使用方法
公开(公告)号：US08030341B2
公开(公告)日：2011-10-04
申请号：US12065121
申请日：2006-08-30
申请人： Lawrence H. Lazarus , Yoshio Okada , Tingyou Li
发明人： Lawrence H. Lazarus , Yoshio Okada , Tingyou Li
IPC分类号： C07D401/12 , A61K31/4725
CPC分类号： C07K14/005 , A61K38/00 , C12N2730/10122
摘要： The present invention relates to symmetric and asymmetric dimeric Dmt (2′,6′-ditnethyl) compounds and Dmt derivative compounds with dual δ and μ opioid receptor antagonist activity. Also, the present invention provides compositions comprising these compounds and it provides methods of using these compounds.
摘要翻译：本发明涉及具有双重δ和μ阿片受体拮抗剂活性的对称和不对称二聚Dmt（2'，6'-二甲基）化合物和Dmt衍生化合物。此外，本发明提供包含这些化合物的组合物，并提供使用这些化合物的方法。

103. 发明申请

US20090056837A1 MAGNESIUM ALLOY MATERIAL AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：镁合金材料及其制造方法
公开(公告)号：US20090056837A1
公开(公告)日：2009-03-05
申请号：US12293489
申请日：2007-03-20
申请人： Mamoru Nakata , Yuiichi Yamada , Koji Itakura , Takahiro Mibe , Yoshio Okada , Yoshihito Kawamura , Michiaki Yamasaki
发明人： Mamoru Nakata , Yuiichi Yamada , Koji Itakura , Takahiro Mibe , Yoshio Okada , Yoshihito Kawamura , Michiaki Yamasaki
IPC分类号： C21D11/00 , C22C23/00
CPC分类号： C22C28/00 , B22D21/007 , C22C23/04 , C22C23/06 , C22F1/00 , C22F1/06
摘要： The present invention provides a magnesium alloy material excellent in high mechanical characteristics without using special manufacturing facilities or processes and a method for manufacturing the magnesium alloy material. The magnesium alloy material is an Mg—Zn—RE alloy containing Zn as an essential component, at least one of Gd, Tb, and Tm as RE, and the rest including Mg and unavoidable impurities and contains a needle-like precipitate or a board-like precipitate (lengthy precipitate: X-phase=β-phase, β′-phase, and β1-phase).
摘要翻译：本发明提供一种在不使用特殊制造设备或工艺的情况下具有优异的高机械特性的镁合金材料以及镁合金材料的制造方法。镁合金材料是以Zn为主要成分的Mg-Zn-RE合金，Gd，Tb，Tm中的至少一种为RE，其余为Mg和不可避免的杂质，含有针状沉淀物或板样沉淀物（长时间沉淀：X相=β相，β'相和β1相）。

104. 发明申请

US20080269143A1 Dmt-Derivative Compounds and Related Compositions and Methods of Use 失效
标题翻译： Dmt衍生化合物及其相关组合物和使用方法
公开(公告)号：US20080269143A1
公开(公告)日：2008-10-30
申请号：US12065121
申请日：2006-08-30
申请人： Lawrence H. Lazarus , Yoshio Okada , Tingyou Li
发明人： Lawrence H. Lazarus , Yoshio Okada , Tingyou Li
IPC分类号： A61K38/07 , A61K31/4725 , C07D401/12 , C07K5/117
CPC分类号： C07K14/005 , A61K38/00 , C12N2730/10122
摘要： The present invention relates to symmetric and asymmetric dimeric Dmt (2′,6′-ditnethyl) compounds and Dmt derivative compounds with dual δ and μ opioid receptor antagonist activity. Also, the present invention provides compositions comprising these compounds and it provides methods of using these compounds.
摘要翻译：本发明涉及具有双重δ和μ阿片受体拮抗剂活性的对称和不对称二聚Dmt（2'，6'-二甲基）化合物和Dmt衍生化合物。此外，本发明提供包含这些化合物的组合物，并提供使用这些化合物的方法。

105. 发明授权

US07087295B2 Surface-coated cutting tool 有权
标题翻译：表面切割工具
公开(公告)号：US07087295B2
公开(公告)日：2006-08-08
申请号：US10501527
申请日：2003-01-14
申请人： Yoshio Okada , Hideki Moriguchi
发明人： Yoshio Okada , Hideki Moriguchi
IPC分类号： B23B27/14
CPC分类号： C23C16/30 , C23C30/005 , Y10T428/24942 , Y10T428/24975 , Y10T428/265
摘要： A coated cutting tool can suppress film spalling due to adhesion. The tool has on its substrate an inner layer, intermediate layer, and outer layer. The inner layer is composed of at least one material selected from the group consisting of the carbide, nitride, carbonitride, boride, boronitride, borocarbonitride, oxide, oxycarbide, oxynitride, and oxycarbonitride of the elements belonging to the IVa, Va, and VIa groups. The inner layer includes at least one layer having a columnar-crystal structure. The outer layer is composed of at least one oxide selected from the group consisting of aluminum oxide, zirconium oxide, hafnium oxide, and their solid solutions. The intermediate layer is composed of titanium boronitride, TiBxNy (x, y: atomic %), that satisfies 0.001
摘要翻译：涂覆的切削工具可以抑制由于粘附而产生的膜剥落。该工具在其衬底上具有内层，中间层和外层。内层由选自属于IVa，Va和VIa族的元素的碳化物，氮化物，碳氮化物，硼化物，氮化硼，硼碳氮化物，氧化物，碳氧化物，氧氮化物和碳氮氧化物中的至少一种材料组成。内层包括具有柱状晶体结构的至少一层。外层由选自氧化铝，氧化锆，氧化铪及其固溶体中的至少一种氧化物构成。中间层由满足0.001

106. 发明申请

US20050149217A1 Semiconductor manufacturing system, work manufacturing system, and conveyance system 审中-公开
标题翻译：半导体制造系统，工作制造系统和输送系统
公开(公告)号：US20050149217A1
公开(公告)日：2005-07-07
申请号：US11030154
申请日：2005-01-07
申请人： Yoshio Okada , Takayuki Wakabayashi , Atsuyoshi Koike , Naoki Takehara
发明人： Yoshio Okada , Takayuki Wakabayashi , Atsuyoshi Koike , Naoki Takehara
IPC分类号： H01L21/02 , G06F19/00 , G06Q10/00 , H01L21/00 , H01L21/677 , H01L21/68
CPC分类号： G06Q10/06 , H01L21/67276 , H01L21/67727
摘要： A semiconductor manufacturing system in a clean room is composed of a combination of a flow shop section and a job shop section. The flow shop section is composed of a quasi flow shop section and a quasi job shop section. In the quasi flow shop section, manufacturing apparatuses are arranged respectively so that a difference between processing ability of the manufacturing apparatuses is taken into consideration and a balance in productivity is achieved. In the quasi job shop section, manufacturing apparatuses are arranged respectively so that the balance in productivity is not achieved due to low or high processing ability of the manufacturing apparatuses, and are provided so as to be shared by the quasi flow shop section. Accordingly, a difference between the processing ability of the manufacturing apparatuses can be reduced and the cycle time can be significantly reduced.
摘要翻译：无尘室中的半导体制造系统由流动车间部和作业车间部的组合构成。流动车间部分由准流动车间部分和准作业车间部分组成。在准流动车间部分，分别配置制造装置，从而考虑到制造装置的处理能力之间的差异，并且实现了生产率的平衡。在准作业车间部分中，分别配置制造装置，由于制造装置的低或高处理能力而不能实现生产率的平衡，并且被设置为由准流动车间部分共享。因此，可以减少制造装置的处理能力之间的差异，并且可以显着地减少循环时间。

107. 发明授权

US5710323A Process for producing monocarboxylic and/or dicarboxylic acids 失效
标题翻译：一元羧酸和/或二羧酸的制备方法
公开(公告)号：US5710323A
公开(公告)日：1998-01-20
申请号：US809701
申请日：1997-03-27
申请人： Ryoichi Okuda , Tadashi Kato , Yoshio Okada
发明人： Ryoichi Okuda , Tadashi Kato , Yoshio Okada
IPC分类号： B01J31/02 , C07C51/10 , C07C51/12 , C07C51/14
CPC分类号： B01J31/0227 , C07C51/10 , C07C51/12 , C07C51/14
摘要： A process for producing a monocarboxylic acid and/or a dicarboxylic acid by the reaction of a starting compound selected from among saturated hydrocarbons, .alpha.-olefins of 6 to 20 carbon atoms, saturated monocarboxylic acids and esters of the acids either with both of carbon monoxide and water at the same time or first with carbon monoxide and then with water, wherein the reaction of the starting compound either with both of carbon monoxide and water or with carbon monoxide alone is conducted in a strong acid solution containing a trifluoromethane-sulfonic acid catalyst and an alcohol and/or an olefin of 3 to 5 carbon atoms.
摘要翻译： PCT No.PCT / JP95 / 01444 Sec。 371日期1997年3月27日 102（e）日期1997年3月27日PCT提交1995年7月20日PCT公布。公开号WO96 / 10006 日本1996年4月4日一种通过使饱和烃，碳原子数为6〜20的α-烯烃，饱和一元羧酸和酸的酯的起始化合物的反应生成单羧酸和/或二羧酸的方法，同时使用一氧化碳和水，或者先用一氧化碳，然后与水反应，其中起始化合物与一氧化碳和水的二氧化碳或单独的一氧化碳的反应在含有三氟甲磺酸催化剂和醇和/或3至5个碳原子的烯烃。

108. 发明授权

US5295117A Semiconductor memory device and method for controlling an output buffer utilizing an address transition detector 失效
标题翻译：半导体存储器件和利用地址转换检测器来控制输出缓冲器的方法
公开(公告)号：US5295117A
公开(公告)日：1994-03-15
申请号：US884276
申请日：1992-05-13
申请人： Yoshio Okada
发明人： Yoshio Okada
IPC分类号： G11C11/41 , G11C7/22 , G11C8/18 , G11C11/413 , G11C7/02 , G11C11/34
CPC分类号： G11C7/22 , G11C8/18
摘要： When data read out from a memory cell array is output to an external device through an output buffer, a first and a second address transition detector generate a first read control pulse signal and a second read control pulse signal in response to a change in an address signal. An operation for reading out data is controlled using the first and second read control pulse signals, such that when noise generated by a change in power source potential, due to a change in output, causes a possible detected change in the address signal, the first and second address transition detectors control the output buffer so erroneous operation is prevented.
摘要翻译：当从存储单元阵列读出的数据通过输出缓冲器输出到外部设备时，第一和第二地址转换检测器响应于地址的变化产生第一读取控制脉冲信号和第二读取控制脉冲信号信号。使用第一和第二读取控制脉冲信号来控制用于读出数据的操作，使得当由于输出变化而由电源电位变化产生的噪声导致地址信号中可能检测到的变化时，第一并且第二地址转换检测器控制输出缓冲器，从而防止错误的操作。

109. 发明授权

US4962320A Input protection circuit for MOS device 失效
标题翻译： MOS器件的输入保护电路
公开(公告)号：US4962320A
公开(公告)日：1990-10-09
申请号：US379279
申请日：1989-07-13
申请人： Yoshio Okada , Sadao Imada , Mitsuru Shimizu
发明人： Yoshio Okada , Sadao Imada , Mitsuru Shimizu
IPC分类号： H01L29/78 , H01L27/02 , H01L27/06 , H03K17/0812 , H03K19/003
CPC分类号： H03K19/00315 , H03K17/08122 , H01L27/0251
摘要： An input protection circuit for MOS devices includes a first resistor and a first parasitic bipolar transistor connected between an input pad and an input buffer circuit of a MOS device. The input protection circuit for MOS devices further includes a second resistor and a second parasitic bipolar transistor connected at a preceding stage of the input buffer circuit so that the gate oxide film of the input buffer circuit can be protected from being damaged by static charges or a voltage which is accidentally generated, without increasing the pattern size of the first parasitic bipolar transistor.

110. 发明授权

US4849654A Semiconductor integrated circuit with input protection circuit 失效
标题翻译：半导体集成电路与输入保护电路
公开(公告)号：US4849654A
公开(公告)日：1989-07-18
申请号：US158728
申请日：1988-02-22
申请人： Yoshio Okada
发明人： Yoshio Okada
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8238 , H01L27/02 , H01L27/092 , H01L29/78 , H03K17/08 , H03K17/16
CPC分类号： H01L27/0251 , H03K17/08 , H03K17/16
摘要： A semiconductor device having an input protection circuit is disclosed. The semiconductor device includes a power-on reset circuit which generates a pulse having a pulse width determined according to an input surge, applied to an input terminal when an input voltage has risen to a preset level. In response to a pulse generated by the power-on reset circuit, a CMOS inverter supplies a predetermined voltage to the base of a bipolar transistor and controls the bipolar transistor so that it clamps an input voltage supplied thereto to a voltage level lower than the withstanding voltage of the internal circuit in a period corresponding to the pulse width. Thus, the input protection circuit constituted by the bipolar transistor clamps an input voltage, supplied by the input terminal to the internal circuit, to a predetermined level. In this invention, the control circuit activates the bipolar transistor at the time the input voltage rises and keeps it active while the power-on reset circuit is generating a pulse, causing an input surge to be bypassed through the bipolar transistor, during this period of time. Thus, the input voltage can be clamped to a level lower than the withstanding voltage of the internal circuit, protecting the internal circuit, even when a surge voltage higher than the withstanding voltage is generated.
摘要翻译：公开了一种具有输入保护电路的半导体器件。半导体器件包括上电复位电路，其产生具有根据输入浪涌确定的脉冲宽度的脉冲，当输入电压上升到预设电平时，该电源施加到输入端子。响应于由上电复位电路产生的脉冲，CMOS反相器向双极晶体管的基极提供预定的电压并控制双极晶体管，使得它将所提供的输入电压钳位到低于耐受电压的电压电平内部电路的电压在与脉冲宽度对应的周期内。因此，由双极晶体管构成的输入保护电路将由输入端提供的输入电压钳位到内部电路，达到预定的电平。在本发明中，控制电路在输入电压升高时激活双极晶体管，并且在上电复位电路产生脉冲时保持其活动，从而在该时间段期间使输入浪涌被旁路通过双极晶体管时间。因此，即使当产生高于耐受电压的浪涌电压时，输入电压也可以被钳位到比内部电路的耐受电压低的水平，保护内部电路。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式