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101. 发明授权

US07651730B2 Method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US07651730B2
公开(公告)日：2010-01-26
申请号：US11180620
申请日：2005-07-14
申请人： Kazuhide Hasebe
发明人： Kazuhide Hasebe
IPC分类号： C23C16/00 , C23C14/10 , C23C16/40
CPC分类号： C23C16/402 , C03C17/245 , C03C2217/213 , C03C2218/152 , C23C16/45546 , C23C16/52 , H01L21/02164 , H01L21/0228 , H01L21/3141 , H01L21/31608
摘要： A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and a deoxidizing gas. This method alternately includes first to fourth steps. The first step is arranged to perform supply of the Si-containing gas to the process field while stopping supply of the oxidizing and deoxidizing gases to the process field. The second step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field. The third step is arranged to perform supply of the oxidizing and deoxidizing gases to the process field at the same time, while stopping supply of the Si-containing gas to the process field. The fourth step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field.
摘要翻译：在配置为选择性地供给含有Si的气体，氧化气体和脱氧气体的工艺区域中，通过CVD在目标衬底上形成氧化硅膜。该方法交替地包括第一至第四步骤。第一步设置为在工艺过程中提供含Si气体，同时停止将氧化和脱氧气体供应给工艺现场。第二步设置为停止向工艺场供应含Si，氧化和脱氧气体。第三步是在停止向工艺场供给含Si气体的同时，同时向工艺场提供氧化和脱氧气体。第四步设置为停止向工艺场供应含Si，氧化和脱氧气体。

102. 发明授权

US07520937B2 Thin film forming apparatus and method of cleaning the same 有权
标题翻译：薄膜形成装置及其清洗方法
公开(公告)号：US07520937B2
公开(公告)日：2009-04-21
申请号：US10927415
申请日：2004-08-26
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Hiromichi Kotsugai
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： C23C16/4405 , B08B7/0035 , C23C16/4404 , Y10S438/905
摘要： The present invention relates to a technique for cleaning a thin film forming apparatus. In a typical embodiment, deposits originating from process gases for forming a thin film and deposited on the inner surface of a reaction tube are removed by etching by supplying a cleaning gas into the reaction tube while heating the interior of the reaction tube at a predetermined temperature. The inner surface of the reaction tube roughened by etching is subjected to a planarizing step. The planarizing step is performed by supplying a gas containing hydrogen fluoride into the reaction tube while keeping the interior of the reaction tube 2 at a low temperature, such as a room temperature. The planarizing step is effective in preventing the reduction of deposition rate in a thin film forming process.
摘要翻译：本发明涉及清洗薄膜形成装置的技术。在典型的实施方案中，通过在反应管内部以预定温度加热反应管的同时，通过蚀刻将清洗气体加入到反应管中，通过蚀刻来除去源自用于形成薄膜并沉积在反应管内表面上的工艺气体的沉积物。对通过蚀刻粗糙化的反应管的内表面进行平坦化步骤。通过在将反应管2的内部保持在室温等低温的同时，向反应管内供给含有氟化氢的气体来进行平坦化工序。平面化步骤在防止薄膜形成工艺中沉积速率的降低方面是有效的。

103. 发明授权

US07479619B2 Thermal processing unit 有权
标题翻译：热处理单元
公开(公告)号：US07479619B2
公开(公告)日：2009-01-20
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

104. 发明授权

US07452826B2 Oxidation method and oxidation system 有权
标题翻译：氧化法和氧化体系
公开(公告)号：US07452826B2
公开(公告)日：2008-11-18
申请号：US11502503
申请日：2006-08-11
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译：氧化法能够以改善的膜间厚度均匀性形成氧化膜。氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛处理容器22通过氧化气体与还原气体的相互作用。将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

105. 发明授权

US07273818B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07273818B2
公开(公告)日：2007-09-25
申请号：US10965819
申请日：2004-10-18
申请人： Masaki Kurokawa , Norifumi Kimura , Takehiko Fujita , Yoshikazu Furusawa , Katsuhiko Komori , Kazuhide Hasebe
发明人： Masaki Kurokawa , Norifumi Kimura , Takehiko Fujita , Yoshikazu Furusawa , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C23C16/0272 , C23C16/24 , C23C16/42 , C23C16/56 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/2807 , H01L21/324 , H01L29/4966
摘要： In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.
摘要翻译：在半导体工艺的成膜方法中，在反应容器内的工艺场中通过CVD在靶基板上形成硅锗膜。然后，在工艺领域中通过CVD覆盖硅锗膜，同时将工艺场的温度从第一温度升至第二温度。然后，通过CVD法在涂膜上形成硅膜。

106. 发明授权

US07220461B2 Method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US07220461B2
公开(公告)日：2007-05-22
申请号：US10961025
申请日：2004-10-12
申请人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
发明人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
IPC分类号： H05H1/24
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/3105
摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
摘要翻译：形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

107. 发明授权

US07211514B2 Heat-processing method for semiconductor process under a vacuum pressure 失效
标题翻译：在真空压力下半导体工艺的热处理方法
公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
发明人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译：目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

108. 发明申请

US20060257568A1 Vapor-phase growing unit 有权
标题翻译：气相生长装置
公开(公告)号：US20060257568A1
公开(公告)日：2006-11-16
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体吐出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

109. 发明申请

US20060099805A1 Heat treating system and heat treating method 审中-公开
标题翻译：热处理系统和热处理方法
公开(公告)号：US20060099805A1
公开(公告)日：2006-05-11
申请号：US10532878
申请日：2003-10-29
申请人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
发明人： Takehiko Fujita , Mitsuhiro Okada , Kota Umezawa , Kazuhide Hasebe , Koichi Sakamoto
IPC分类号： H01L21/44 , C23C16/00 , H05B3/02
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
摘要翻译：本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部。控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。

110. 发明申请

US20050284575A1 Processing system and operating method of processing system 审中-公开
标题翻译：处理系统和处理系统的操作方法
公开(公告)号：US20050284575A1
公开(公告)日：2005-12-29
申请号：US11196398
申请日：2005-08-04
申请人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
发明人： Kazuhide Hasebe , Atsushi Endo , Mitsuhiro Okada , Jun Ogawa , Akihito Yamamoto , Takashi Nakao , Masaki Kamimura , Yukihiro Ushiku
IPC分类号： C23C16/44 , H01L21/00 , C23F1/00 , B44C1/22
CPC分类号： H01L21/67248 , C23C16/4405 , H01L21/67109
摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.
摘要翻译：本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件，温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元，改变单元，其在过程到基板和清洁过程之间改变目标温度。通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度在清洗过程中可能会抑制特定部分的腐蚀。

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