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    • 102. 发明授权
    • Resistive memory element sensing using averaging
    • 电阻式存储元件感应使用平均
    • US07577044B2
    • 2009-08-18
    • US12049426
    • 2008-03-17
    • R. Jacob Baker
    • R. Jacob Baker
    • G11C11/02G01R27/14
    • G01R27/02G11C11/16G11C11/1659G11C11/1673G11C13/004G11C13/0061G11C2013/0054
    • A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir to repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.
    • 一种用于确定电阻性存储单元元件(例如MRAM电阻单元元件)的逻辑状态的系统。 该系统包括受控电压源,电子充电储存器,电流源和脉冲计数器。 受控电压源连接到电阻存储单元元件,以在电阻元件两端保持恒定的电压。 电荷储存器连接到电压源以提供通过电阻元件的电流。 电流源连接到电荷储存器,以在从储存器耗尽电荷时重复地提供电流脉冲以对储存器再充电,并且脉冲计数器在预定时间内提供由电流源提供的脉冲数的计数 。 计数表示存储单元元件的逻辑状态。
    • 108. 发明授权
    • Resistive memory element sensing using averaging
    • 电阻式存储元件感应使用平均
    • US06822892B2
    • 2004-11-23
    • US10290297
    • 2002-11-08
    • R. Jacob Baker
    • R. Jacob Baker
    • G11C1121
    • G01R27/02G11C11/16G11C11/1659G11C11/1673G11C13/004G11C13/0061G11C2013/0054
    • A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.
    • 一种用于确定电阻性存储单元元件(例如MRAM电阻单元元件)的逻辑状态的系统。 该系统包括受控电压源,电子充电储存器,电流源和脉冲计数器。 受控电压源连接到电阻存储单元元件,以在电阻元件两端保持恒定的电压。 电荷储存器连接到电压源以提供通过电阻元件的电流。 电流源连接到充电储存器,在从储存器耗尽电荷时,重复地提供电流脉冲以对储存器再充电,并且脉冲计数器在预定时间内提供由电流源提供的脉冲数量的计数。 计数表示存储单元元件的逻辑状态。
    • 109. 发明授权
    • Method and apparatus for sensing resistance values of memory cells
    • 用于感测存储单元的电阻值的方法和装置
    • US06785156B2
    • 2004-08-31
    • US10345384
    • 2003-01-16
    • R. Jacob Baker
    • R. Jacob Baker
    • G11C1100
    • G11C7/065G11C11/16
    • A method for sensing the resistance value of a resistor-based memory cell. A current is driven through all unused row lines of a memory array while grounding the row line associated with the selected cell, thereby forcing the current through a comparatively low equivalent resistance formed by the parallel coupling of all unselected memory cells and also through a comparatively high resistance of the selected memory cell. The voltage on a column line corresponding to the selected memory cell is then measured to ground. The voltage level corresponds to either one of two resistance values (i.e., signifying either a logic “HIGH” or a logic “LOW”).
    • 一种用于感测基于电阻器的存储单元的电阻值的方法。 电流通过存储器阵列的所有未使用的行线驱动,同时将与所选择的单元相关联的行线接地,从而迫使电流通过由所有未选择的存储器单元的并联耦合形成的相对较低的等效电阻,并且还通过相对较高的 所选存储单元的电阻。 然后将对应于所选存储单元的列线上的电压测量为接地。 电压电平对应于两个电阻值中的任一个(即,表示逻辑“HIGH”或逻辑“LOW”)。