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1. 发明授权

US06822892B2 Resistive memory element sensing using averaging 有权
标题翻译：电阻式存储元件感应使用平均
公开(公告)号：US06822892B2
公开(公告)日：2004-11-23
申请号：US10290297
申请日：2002-11-08
申请人： R. Jacob Baker
发明人： R. Jacob Baker
IPC分类号： G11C1121
CPC分类号： G01R27/02 , G11C11/16 , G11C11/1659 , G11C11/1673 , G11C13/004 , G11C13/0061 , G11C2013/0054
摘要： A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter. The controlled voltage supply is connected to the resistive memory cell element to maintain a constant voltage across the resistive element. The charge reservoir is connected to the voltage supply to provide a current through the resistive element. The current source is connected to the charge reservoir repeatedly supply a pulse of current to recharge the reservoir upon depletion of electronic charge from the reservoir, and the pulse counter provides a count of the number of pulses supplied by the current source over a predetermined time. The count represents a logic state of the memory cell element.
摘要翻译：一种用于确定电阻性存储单元元件（例如MRAM电阻单元元件）的逻辑状态的系统。该系统包括受控电压源，电子充电储存器，电流源和脉冲计数器。受控电压源连接到电阻存储单元元件，以在电阻元件两端保持恒定的电压。电荷储存器连接到电压源以提供通过电阻元件的电流。电流源连接到充电储存器，在从储存器耗尽电荷时，重复地提供电流脉冲以对储存器再充电，并且脉冲计数器在预定时间内提供由电流源提供的脉冲数量的计数。计数表示存储单元元件的逻辑状态。

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