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101. 发明申请

US20130169862A1 ELECTRONIC DEVICE WITH CAMERA SHELTER 有权
标题翻译：具有摄像机的电子设备
公开(公告)号：US20130169862A1
公开(公告)日：2013-07-04
申请号：US13407778
申请日：2012-02-29
申请人： PING HAN , YANG-LIANG WU
发明人： PING HAN , YANG-LIANG WU
IPC分类号： H04N5/225
CPC分类号： G06F1/1686 , G06F1/1656 , H04M1/0264
摘要： An electronic device includes a first housing defining a first hole, a second housing, a camera, and a camera shelter. The second housing includes a receiving part and a fixing part. The camera is fixed to the second housing. The camera shelter includes a body, an operation part, and a connection part. The body and the operation part are received in the receiving part. The connection part engages the fixing part to connect the camera shelter to the second housing. The body is sandwiched between the first housing and the second housing. When the operation part positions in a first position, the first hole defined in the first housing overlaps a second hole defined on the body to expose the camera. When the operation part is moved to a second position, the body of the camera shelter shelters the camera.
摘要翻译：电子设备包括限定第一孔的第一壳体，第二壳体，照相机和照相机遮蔽物。第二壳体包括接收部分和固定部分。相机固定在第二个外壳上。照相机防护罩包括主体，操作部和连接部。主体和操作部分被接收在接收部分中。连接部分接合固定部分以将照相机遮蔽物连接到第二壳体。主体夹在第一壳体和第二壳体之间。当操作部分位于第一位置时，限定在第一壳体中的第一孔与限定在身体上的第二孔重叠以暴露相机。当操作部件移动到第二位置时，照相机防护罩的主体遮住相机。

102. 发明申请

US20130044495A1 LIGHTING FIXTURE EQUIPPED WITH A SHAPED REFLECTOR 审中-公开
标题翻译：配有形状反射器的灯具
公开(公告)号：US20130044495A1
公开(公告)日：2013-02-21
申请号：US13213232
申请日：2011-08-19
申请人： Ping-Han CHUANG , Chia-Mei PENG
发明人： Ping-Han CHUANG , Chia-Mei PENG
IPC分类号： F21V7/09
CPC分类号： F21V7/09 , F21V5/02 , F21V13/04 , F21W2131/103 , F21Y2115/10
摘要： A lighting fixture includes a light source, a lamp case, a power supply device, a shaped reflector and a prism. The shaped reflector has inwardly curved front and back walls each consisting of multiple conical faces abutted against one another and sloping at different angles. The angle of inclination of one lower conical face is relatively closer toward the center of the shaped reflector than that of the adjacent upper conical face. Thus, the shaped reflector effectively and evenly reflects the light emitted by the light source onto a predetermined rectangular or particularly shaped illumination area. Therefore, the lighting fixture is practical for road illumination, lounge illumination, advertizing light box and streamline table light applications to effectively and evenly illuminate the desired area, saving much power consumption.
摘要翻译：照明器具包括光源，灯壳，电源装置，成形反射器和棱镜。成形的反射器具有向内弯曲的前壁和后壁，每个顶部和后壁由彼此抵靠并以不同角度倾斜的多个锥形面组成。一个下锥形面的倾斜角相对于成形反射器的中心比相邻的上锥形面的倾斜角更接近。因此，成形反射器将由光源发射的光有效地均匀地反射到预定的矩形或特别形状的照明区域上。因此，照明灯具实用于道路照明，休息室照明，广告灯箱和流线型桌面照明应用，有效均匀地照亮所需区域，节省大量功耗。

103. 发明申请

US20120177595A1 MULTIMERIC IL-15 SOLUBLE FUSION MOLECULES AND METHODS OF MAKING AND USING SAME 有权
标题翻译：多种IL-15可溶融合分子及其制备方法和使用方法
公开(公告)号：US20120177595A1
公开(公告)日：2012-07-12
申请号：US13238925
申请日：2011-09-21
申请人： Hing C. Wong , Peter Rhode , Bai Liu , Xiaoyun Zhu , Kai-ping Han
发明人： Hing C. Wong , Peter Rhode , Bai Liu , Xiaoyun Zhu , Kai-ping Han
IPC分类号： A61K39/395 , C12N15/62 , C12N15/63 , C12P21/00 , C12N1/21 , G01N33/53 , A61P37/02 , A61P37/04 , A61P35/00 , C12N5/10 , C07K19/00 , C12N5/071
CPC分类号： C07K14/7155 , A61K38/00 , A61K38/1793 , A61K38/2086 , A61K39/3955 , A61K45/06 , C07K14/5443 , C07K16/18 , C07K16/2887 , C07K2317/622 , C07K2317/732 , C07K2319/00 , C07K2319/21 , C07K2319/22 , C07K2319/30 , C12N15/09 , C12N15/62 , C12P21/00 , A61K2300/00
摘要： The invention provides soluble fusion protein complexes having at least two soluble fusion proteins. The first fusion protein is a biologically active polypeptide covalently linked to an interleukin-15 (IL-15) polypeptide or a functional fragment thereof. The second fusion protein is a second biologically active polypeptide covalently linked to a soluble interleukin-15 receptor alpha (IL-15Rα) polypeptide or a functional fragment thereof. In the complexes of the invention, one or both of the first and second fusion proteins further includes an immunoglobulin Fc domain or a functional fragment thereof; and the first fusion protein binds to the soluble IL-15Rα domain of the second fusion protein to form a soluble fusion protein complex. The invention further provides methods for making and using the complexes of the invention.
摘要翻译：本发明提供具有至少两种可溶性融合蛋白的可溶性融合蛋白复合物。第一融合蛋白是与白细胞介素-15（IL-15）多肽或其功能片段共价连接的生物活性多肽。第二融合蛋白是与可溶性白介素-15受体α（IL-15Rα）多肽或其功能片段共价连接的第二生物活性多肽。在本发明的复合物中，第一和第二融合蛋白中的一个或两个还包括免疫球蛋白Fc结构域或其功能片段; 并且第一融合蛋白结合第二融合蛋白的可溶性IL-15Rα结构域以形成可溶性融合蛋白复合物。本发明还提供了制备和使用本发明复合物的方法。

104. 发明授权

US08198194B2 Methods of forming p-channel field effect transistors having SiGe source/drain regions 有权
标题翻译：形成具有SiGe源极/漏极区域的p沟道场效应晶体管的方法
公开(公告)号：US08198194B2
公开(公告)日：2012-06-12
申请号：US12729486
申请日：2010-03-23
申请人： Jong Ho Yang , Hyung-rae Lee , Jin-Ping Han , Chung Woh Lai , Henry K. Utomo , Thomas W. Dyer
发明人： Jong Ho Yang , Hyung-rae Lee , Jin-Ping Han , Chung Woh Lai , Henry K. Utomo , Thomas W. Dyer
IPC分类号： H01L21/311
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/7848
摘要： Methods of forming p-channel MOSFETs use halo-implant steps that are performed relatively early in the fabrication process. These methods include forming a gate electrode having first sidewall spacers thereon, on a semiconductor substrate, and then forming a sacrificial sidewall spacer layer on the gate electrode. A mask layer then patterned on the gate electrode. The sacrificial sidewall spacer layer is selectively etched to define sacrificial sidewall spacers on the first sidewall spacers, using the patterned mask layer as an etching mask. A PFET halo-implant of dopants is then performed into portions of the semiconductor substrate that extend adjacent the gate electrode, using the sacrificial sidewall spacers as an implant mask. Following this implant step, source and drain region trenches are etched into the semiconductor substrate, on opposite sides of the gate electrode. These source and drain region trenches are then filled by epitaxially growing SiGe source and drain regions therein.
摘要翻译：形成p沟道MOSFET的方法使用在制造过程中相对较早执行的光晕注入步骤。这些方法包括在半导体衬底上形成其上具有第一侧壁间隔物的栅电极，然后在栅电极上形成牺牲侧壁间隔层。然后在栅电极上图案化掩模层。选择性地蚀刻牺牲侧壁间隔层，以使用图案化掩模层作为蚀刻掩模在第一侧壁间隔物上限定牺牲侧壁间隔物。然后使用牺牲侧壁间隔件作为植入物掩模，将掺杂剂的PFET晕注入物执行到邻近栅电极延伸的部分半导体衬底。在该注入步骤之后，源极和漏极区沟槽在栅电极的相对侧被蚀刻到半导体衬底中。然后通过在其中外延生长SiGe源极和漏极区域来填充这些源极和漏极区沟槽。

105. 发明申请

US20120033093A1 IMAGE STABILIZER CONTROL DEVICE 审中-公开
标题翻译：图像稳定器控制装置
公开(公告)号：US20120033093A1
公开(公告)日：2012-02-09
申请号：US12890702
申请日：2010-09-26
申请人： PING-HAN KU
发明人： PING-HAN KU
IPC分类号： H04N5/225
CPC分类号： H04N5/2328 , H04N5/23258
摘要： An image stabilizer control device includes a biaxial gyroscope, a processing unit and an actuator unit. The biaxial gyroscope senses movement of an imaging module and detects a first angular velocity of the imaging module in two reference planes perpendicular to each other. The processing unit generates a first driving signal in response to the first angular velocity. The actuator unit moves the imaging module to compensate the movement in response to the first driving signal. The biaxial gyroscope detects a second angular velocity of the imaging module in the two reference planes upon completing movement compensation associated with the first driving signal. The processing unit converts the second angular velocity into a second angle, compares the second angle with a predetermined angle range and generates a second driving signal in response to the comparison result. The actuator unit moves the imaging module in response to the second driving signal.
摘要翻译：图像稳定器控制装置包括双轴陀螺仪，处理单元和致动器单元。双轴陀螺仪感测成像模块的运动并且检测成像模块在彼此垂直的两个参考平面中的第一角速度。处理单元响应于第一角速度产生第一驱动信号。致动器单元移动成像模块以补偿响应于第一驱动信号的运动。完成与第一驱动信号相关联的运动补偿时，双轴陀螺仪检测成像模块在两个参考平面中的第二角速度。处理单元将第二角速度转换成第二角度，将第二角度与预定角度范围进行比较，并且响应于比较结果产生第二驱动信号。致动器单元响应于第二驱动信号移动成像模块。

106. 发明申请

US20110269250A1 GROWTH METHOD OF FE3N MATERIAL 有权
标题翻译： FE3N材料的生长方法
公开(公告)号：US20110269250A1
公开(公告)日：2011-11-03
申请号：US12772508
申请日：2010-05-03
申请人： Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
发明人： Rong Zhang , Zili Xie , Bin Liu , Xiangqian Xiu , Henan Fang , Hong Zhao , Xuemei Hua , Ping Han , Peng Chen , Youdou Zheng
IPC分类号： H01L21/3205
CPC分类号： C23C16/0272 , C23C16/34 , C30B25/02 , C30B29/38 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0262
摘要： A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.
摘要翻译：一种Fe3N的生长方法，并且生长在MOCVD系统中，包括以下过程：1）。将制作蓝宝石衬底的表面氮化; 2）。泵送载气N2，氨和有机镓源，并在底物上生长低温GaN缓冲液; 3）。温度升高并生长GaN支撑层; 4）。泵浦FeCp2作为Fe源，然后在GaN支撑层上生长Fe3N; 可以获得Fe3N颗粒膜和Fe3N单晶膜。本发明实现了生长高品质的Fe3N膜。根据难以生长材料的问题，通过控制和调节有机镓源和铁源的通量条件，生长温度，生长时间，氨通量和N和Ga的摩尔比来解决问题。在本发明中，该方法容易，可以控制生长过程，因此生长方法和生长技术的过程控制有所进步。

107. 发明授权

US07909485B2 Light distribution board 有权
标题翻译：配电板
公开(公告)号：US07909485B2
公开(公告)日：2011-03-22
申请号：US12285899
申请日：2008-10-16
申请人： Ping-Han Chuang
发明人： Ping-Han Chuang
IPC分类号： F21V3/00 , F21V5/00 , F21S8/10
CPC分类号： G02B5/189 , G02B27/095
摘要： A light distribution board used as an illuminating cover for a lamp set and having on a transparent board of it saw toothed light gratings, each saw toothed light grating is composed of a convex lens surface and a bevel plane lens surface the saw toothed light gratings are arranged at two lateral sides of a central line of the transparent board to form mirror images one side to the other side, the bevel plane lens surfaces are arranged to face respectively to two lateral sides of the transparent board, while the convex lens surfaces are arranged to face to the central line; the top surface is a light receiving surface of the lamp set. The bottom surface of the transparent board is formed thereon a plurality of convex-lens strip like light gratings and the bottom surface is an illuminating surface of the lamp set. With this structure, light beams can be uniformly distributed and can avoid the phenomenon of Gauss distribution that makes the area below the lamp especially bright, and avoid the phenomenon of dazzling of eyes during looking at the light emitting member in the lamp set, and the light beams become more tender under the condition that lose of brightness is minimum.
摘要翻译：用作灯组的照明罩并配有透光板的配光板锯齿形光栅，每个锯齿光栅由凸透镜表面和斜面平面透镜表面组成，锯齿光栅为布置在透明板的中心线的两个侧面，以形成一侧到另一侧的镜像，斜面平面透镜表面分别布置成面对透明板的两个侧面，而凸透镜表面布置面对中线; 顶表面是灯组的光接收表面。透明板的底面形成有多个凸透镜条状的光栅，底面是灯具的照明面。通过这种结构，光束可以均匀分布，并且可以避免高斯分布的现象，使得灯下方的区域特别亮，并且避免在观察灯组中的发光构件时眼睛的眩目现象，并且在亮度损失最小的条件下，光束变得更柔嫩。

108. 发明授权

US07892939B2 Threshold voltage consistency and effective width in same-substrate device groups 有权
标题翻译：同基板器件组中的阈值电压一致性和有效宽度
公开(公告)号：US07892939B2
公开(公告)日：2011-02-22
申请号：US12043384
申请日：2008-03-06
申请人： Roland Hampp , Manfred Eller , Jin-Ping Han , Matthias Lipinski
发明人： Roland Hampp , Manfred Eller , Jin-Ping Han , Matthias Lipinski
IPC分类号： H01L21/76 , H01L21/311
CPC分类号： H01L21/76262 , H01L21/76278
摘要： The prevention of active area loss in the STI model is disclosed which results in an improved device performance in devices manufactured according to the process flow. The process generally shared among the multiple various embodiments inverts the current conventional STI structure towards a process flow where an insulator is patterned with tapered trenches. A segregation layer is formed beneath the surface of the insulator in the tapered trenches. The tapered trenches are then filled with a semiconductor material which is further processed to create a number of active devices. Therefore, the active devices are created in patterned dielectric instead of the STI being created in the semiconductor substrate of the active devices.
摘要翻译：公开了STI模型中的有源面积损耗的防止，这导致根据工艺流程制造的器件中的器件性能提高。多个不同实施例中通常共享的方法将当前常规STI结构转换为绝缘体用锥形图案化的工艺流程。在锥形沟槽中的绝缘体的表面下方形成偏析层。然后用半导体材料填充锥形沟槽，半导体材料被进一步处理以产生多个有源器件。因此，有源器件是在图案化电介质中产生的，而不是在有源器件的半导体衬底中产生的STI。

109. 发明申请

US20100308418A1 Semiconductor Devices and Methods of Manufacture Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100308418A1
公开(公告)日：2010-12-09
申请号：US12481373
申请日：2009-06-09
申请人： Knut Stahrenberg , Roland Hampp , Jin-Ping Han , Klaus von Arnim
发明人： Knut Stahrenberg , Roland Hampp , Jin-Ping Han , Klaus von Arnim
IPC分类号： H01L27/088 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/82345 , H01L21/823462 , H01L21/823842
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a gate dielectric and a cap layer disposed over the gate dielectric. The first transistor includes a gate including a metal layer disposed over the cap layer and a semiconductive material disposed over the metal layer. The semiconductor device includes a second transistor in a second region of the workpiece, which includes the gate dielectric and the cap layer disposed over the gate dielectric. The second transistor includes a gate that includes the metal layer disposed over the cap layer and the semiconductive material disposed over the metal layer. A thickness of the metal layer, a thickness of the semiconductive material, an implantation region of a channel region, or a doped region of the gate dielectric of the first transistor achieves a predetermined threshold voltage for the first transistor.
摘要翻译：公开了半导体器件及其制造方法。在一个实施例中，半导体器件包括具有栅极电介质的第一晶体管和设置在栅极电介质上的覆盖层。第一晶体管包括包括设置在盖层上的金属层的栅极和设置在金属层上的半导体材料。半导体器件包括在工件的第二区域中的第二晶体管，其包括设置在栅极电介质上的栅极电介质和盖层。第二晶体管包括栅极，其包括设置在覆盖层上的金属层和设置在金属层上的半导体材料。第一晶体管的金属层的厚度，半导体材料的厚度，沟道区的注入区域或栅极电介质的掺杂区域实现了第一晶体管的预定阈值电压。

110. 发明申请

US20100289088A1 THRESHOLD VOLTAGE IMPROVEMENT EMPLOYING FLUORINE IMPLANTATION AND ADJUSTMENT OXIDE LAYER 有权
标题翻译：使用荧光植入和调整氧化层的阈值电压改进
公开(公告)号：US20100289088A1
公开(公告)日：2010-11-18
申请号：US12465908
申请日：2009-05-14
申请人： Weipeng Li , Dae-Gyu Park , Melanie J. Sherony , Jin-Ping Han , Yong Meng Lee
发明人： Weipeng Li , Dae-Gyu Park , Melanie J. Sherony , Jin-Ping Han , Yong Meng Lee
IPC分类号： H01L27/088 , H01L21/8236
CPC分类号： H01L21/823807
摘要： An epitaxial semiconductor layer may be formed in a first area reserved for p-type field effect transistors. An ion implantation mask layer is formed and patterned to provide an opening in the first area, while blocking at least a second area reserved for n-type field effect transistors. Fluorine is implanted into the opening to form an epitaxial fluorine-doped semiconductor layer and an underlying fluorine-doped semiconductor layer in the first area. A composite gate stack including a high-k gate dielectric layer and an adjustment oxide layer is formed in the first and second area. P-type and n-type field effect transistors (FET's) are formed in the first and second areas, respectively. The epitaxial fluorine-doped semiconductor layer and the underlying fluorine-doped semiconductor layer compensate for the reduction of the decrease in the threshold voltage in the p-FET by the adjustment oxide portion directly above.
摘要翻译：可以在为p型场效应晶体管保留的第一区域中形成外延半导体层。形成离子注入掩模层并图案化以在第一区域中提供开口，同时阻挡至少为n型场效应晶体管保留的第二区域。将氟注入到开口中以在第一区域中形成外延氟掺杂半导体层和下面的掺氟半导体层。在第一和第二区域中形成包括高k栅极电介质层和调整氧化物层的复合栅极堆叠。 P型和n型场效应晶体管（FET）分别形成在第一和第二区域中。外延氟掺杂半导体层和下面的掺氟半导体层通过直接在上面的调整氧化物部分来补偿p-FET中阈值电压的降低。

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