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91. 发明授权

US10081152B2 Apparatus and method for creating corrugated cardboard, in particular on the site of systems for automatically forming packaging boxes 有权
公开(公告)号：US10081152B2
公开(公告)日：2018-09-25
申请号：US15010493
申请日：2016-01-29
申请人： NEOPOST TECHNOLOGIES B.V.
发明人： Erik Huizinga , Reint Smit
IPC分类号： B32B29/08 , B31F1/28 , B31D3/00 , B65B1/28
CPC分类号： B31D3/005 , B31F1/2818 , B31F1/2822 , B31F1/285 , B31F1/2881 , B32B29/08 , B32B2250/26 , B65B1/28 , B65B2210/04 , Y10T156/1025
摘要： A apparatus for creating corrugated cardboard (20) in particular on the site of a system for automatically forming packaging boxes, said corrugated cardboard having at least one corrugated layer (10) between two flat layers (12, 18). The apparatus includes a joining station (16) for attaching a second flat layer (18) to a corrugated layer (10) provided on a first flat layer (12), means for supplying said corrugated layer (10) with the first flat layer (12) attached thereto to said joining station (16) and means for supplying said second flat layer (18) to said joining station, means for removing a protective layer (28) from the corrugated layer (10) and/or the second flat layer (18), said protective layer (28) protecting an adhesive substance provided on the corrugated layer (10) or the second flat layer (18).

92. 发明授权

US09595422B2 Plasma etching of porous substrates 有权
标题翻译：多孔基材的等离子体蚀刻
公开(公告)号：US09595422B2
公开(公告)日：2017-03-14
申请号：US15072141
申请日：2016-03-16
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Mikhaïl Baklanov , Liping Zhang , Jean-Francois de Marneffe
IPC分类号： B31D3/00 , H01J37/32 , H01L21/3105 , H01L21/311 , H01L21/768
CPC分类号： H01J37/32009 , H01J2237/334 , H01L21/3105 , H01L21/31116 , H01L21/76814 , H01L21/76826
摘要： The disclosed technology generally relates to semiconductor fabrication, and more particularly to plasma etching of dielectric materials having pores. In one aspect, a method for etching a porous material in an environment includes contacting the porous material with an organic gas at a pressure and a temperature. The organic gas is such that at the pressure and the temperature, the organic gas remains in a gas state when outside of the porous material, while the organic gas condenses into an organic liquid upon contacting the porous material. Upon contacting the porous material, the organic gas thereby fills the pores of the porous material with the organic liquid. Subsequent to contacting the porous material, the method additionally includes plasma etch-treating of the porous material having filled pores, thereby evaporating a fraction of the organic liquid filling the pores of the porous material.
摘要翻译：所公开的技术通常涉及半导体制造，更具体地涉及具有孔的电介质材料的等离子体蚀刻。一方面，在环境中蚀刻多孔材料的方法包括在压力和温度下使多孔材料与有机气体接触。有机气体使得在压力和温度下，有机气体在多孔材料外部保持为气态，而有机气体在与多孔材料接触时冷凝成有机液体。当接触多孔材料时，有机气体由此用有机液体填充多孔材料的孔隙。在多孔材料接触之后，该方法另外包括等离子体蚀刻处理具有填充孔的多孔材料，由此蒸发填充多孔材料的孔的有机液体的一部分。

93. 发明授权

US09559355B2 Particulate anode materials and methods for their preparation 有权
标题翻译：颗粒阳极材料及其制备方法
公开(公告)号：US09559355B2
公开(公告)日：2017-01-31
申请号：US14345786
申请日：2012-09-19
申请人： Hydro-Quebec
发明人： Karim Zaghib , Abdelbast Guerfi , Dominic Leblanc
IPC分类号： B31D3/00 , H01M4/36 , C01B33/113 , H01M4/38 , H01M4/48 , H01M4/62 , H01M4/04 , H01M4/1395 , H01M4/1391 , H01M10/052 , H01M4/02 , H01M4/131 , H01M4/134
CPC分类号： H01M4/366 , C01B33/113 , H01M4/0402 , H01M4/043 , H01M4/0471 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/386 , H01M4/48 , H01M4/483 , H01M4/583 , H01M4/625 , H01M10/052 , H01M10/0525 , H01M2004/021 , Y02E60/122
摘要： Method for preparing a particulate material including particles of an element of group IVa, an oxide thereof or an alloy thereof, the method including: (a) dry grinding particles from an ingot of an element of group IVa, an oxide thereof or an alloy thereof to obtain micrometer size particles; and (b) wet grinding the micrometer particles dispersed in a solvent carrier to obtain nanometer size particles having a size between 10 to 100 nanometers, optionally a stabilizing agent is added during or after the wet grinding. Method can include further steps of (c) drying the nanometer size particles, (d) mixing the nanometer size particles with a carbon precursor; and (e) pyrolyzing the mixture, thereby forming a coat of conductive carbon on at least part of the surface of the particles. The particulate material can be used in fabrication of an anode in an electrochemical cell or electrochemical storage energy apparatus.
摘要翻译：制备包含Ⅳa族元素，其氧化物或其合金的颗粒的颗粒材料的方法，该方法包括：（ⅰ）从Ⅳa族元素的锭，其氧化物或其合金以获得微米尺寸的颗粒; 和（b）湿式研磨分散在溶剂载体中的微米颗粒，得到尺寸在10至100纳米之间的纳米尺寸颗粒，任选地在湿研磨期间或之后加入稳定剂。方法可以包括以下步骤：（c）干燥纳米尺寸的颗粒，（d）将纳米尺寸颗粒与碳前体混合; 和（e）热解混合物，从而在颗粒的至少部分表面上形成导电碳涂层。颗粒材料可用于在电化学电池或电化学储存能量装置中制造阳极。

94. 发明授权

US09413002B2 Particulate anode materials and methods for their preparation 有权
公开(公告)号：US09413002B2
公开(公告)日：2016-08-09
申请号：US14345786
申请日：2012-09-19
申请人： Hydro-Quebec
发明人： Karim Zaghib , Abdelbast Guerfi , Dominic Leblanc
IPC分类号： B31D3/00 , H01M4/36 , C01B33/113 , H01M4/38 , H01M4/48 , H01M4/62 , H01M4/04 , H01M4/1395 , H01M4/1391 , H01M10/052 , H01M4/02 , H01M4/131 , H01M4/134
摘要： Method for preparing a particulate material including particles of an element of group IVa, an oxide thereof or an alloy thereof, the method including: (a) dry grinding particles from an ingot of an element of group IVa, an oxide thereof or an alloy thereof to obtain micrometer size particles; and (b) wet grinding the micrometer particles dispersed in a solvent carrier to obtain nanometer size particles having a size between 10 to 100 nanometers, optionally a stabilizing agent is added during or after the wet grinding. Method can include further steps of (c) drying the nanometer size particles, (d) mixing the nanometer size particles with a carbon precursor; and (e) pyrolyzing the mixture, thereby forming a coat of conductive carbon on at least part of the surface of the particles. The particulate material can be used in fabrication of an anode in an electrochemical cell or electrochemical storage energy apparatus.

95. 发明授权

US09371250B2 Method for structuring a surface by means of ion-beam etching, structured surface and uses 有权
标题翻译：通过离子束蚀刻，结构化表面和用途构造表面的方法
公开(公告)号：US09371250B2
公开(公告)日：2016-06-21
申请号：US13513117
申请日：2010-11-24
申请人： Elin Sondergard , Sébastien Le Roy , Alban Letailleur , Etienne Barthel , Constance Magne
发明人： Elin Sondergard , Sébastien Le Roy , Alban Letailleur , Etienne Barthel , Constance Magne
IPC分类号： B31D3/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , C03C14/00 , C03C21/00
CPC分类号： C03C14/004 , C03C15/00 , C03C21/005 , C03C2214/08 , C03C2217/77 , Y10T428/24355
摘要： A process for forming an array of irregularities or features that are submicron-size in height and that have a characteristic lateral dimension that is micron- or submicron-size, over a surface of a material, by ion erosion, the process including: supplying the material with a thickness at least equal to 100 nm, the material being a solid hybrid material that includes: a simple oxide or a mixed oxide of one or more elements, an oxide molar percentage in the material being at least 40%; and a species, of a different nature to the one or more elements of the oxide, a molar percentage of the species in the material ranging from 6 mol % up to 50 mol % while remaining below the percentage of the oxide, most of the species having a largest characteristic dimension smaller than 50 nm, optionally heating the hybrid material before the erosion; structuring the surface of the hybrid material with an erosion that lasts less than one hour over an erosion area greater than 1 cm2, until the array of features is formed, the structuring optionally being accompanied by heating of the hybrid material.
摘要翻译：一种用于在材料的表面上通过离子侵蚀形成高度亚微米尺寸并且具有微米或亚微米尺寸的特征横向尺寸的不规则或特征阵列的方法，所述方法包括：厚度至少等于100nm的材料，该材料是固体杂化材料，其包括：单一氧化物或一种或多种元素的混合氧化物，所述材料中的氧化物摩尔百分比为至少40％; 和与氧化物的一种或多种元素不同性质的物质，材料中物质的摩尔百分比范围为6mol％至50mol％，同时保持低于氧化物的百分比，大多数物种具有小于50nm的最大特征尺寸，任选在侵蚀之前加热杂化材料; 在侵蚀面积大于1cm 2的情况下，侵蚀持续时间小于1小时，直到形成特征阵列，结构化可选地伴随加热混合材料。

96. 发明授权

US09096027B2 Manufacturing method for honeycomb-like structural body, and the honeycomb-like structural body 有权
标题翻译：蜂窝状结构体的制造方法以及蜂窝状结构体
公开(公告)号：US09096027B2
公开(公告)日：2015-08-04
申请号：US13133185
申请日：2009-12-14
申请人： Hiroyuki Oyama
发明人： Hiroyuki Oyama
IPC分类号： B29D24/00 , B29C70/30 , B32B38/00 , B32B27/04 , B31D3/02 , B29C33/48 , B29D99/00 , B31D3/00
CPC分类号： B29D24/005 , B29C33/485 , B29C70/30 , B29D99/0089 , B31D3/002 , B31D3/0223 , B32B27/04 , B32B38/0036 , B32B2305/076 , B32B2307/736 , Y10T428/24149
摘要： A preform is formed by stacking core elements that are coated with prepregs. By heating the preform at a temperature at which the core elements do not thermally shrink, the prepregs are preliminarily hardened, and prepregs that are in contact with each other are caused to adhere to each other. Then, the prepregs are definitively hardened and the core elements are thermally shrunk by heating the preform at a temperature at which the core elements thermally shrink.
摘要翻译：通过堆叠涂覆有预浸料的芯元件形成预制件。通过在核心元件不热收缩的温度下加热预成型体，预浸料坯被预先硬化，并且使彼此接触的预浸料彼此粘合。然后，通过在核心元件热收缩的温度下加热预成型件，将预浸料固化硬化并且芯部元件热收缩。

97. 发明授权

US08685855B2 Tray for CVD and method for forming film using same 有权
标题翻译：用于CVD的托盘和使用其形成膜的方法
公开(公告)号：US08685855B2
公开(公告)日：2014-04-01
申请号：US13513610
申请日：2010-11-29
申请人： Takashi Nakayama , Tomoyuki Kabasawa , Takayuki Kihara
发明人： Takashi Nakayama , Tomoyuki Kabasawa , Takayuki Kihara
IPC分类号： H01L21/44 , B31D3/00 , C23C16/00
CPC分类号： C23C16/4585
摘要： A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.
摘要翻译：用于通过CVD法成膜的托盘包括托盘主体（2）和安装在用于支撑硅晶片（5）的托盘主体（2）上的支撑构件（3）。支撑构件（3）具有保持部（3c），硅晶片（5）直接放置在该保持部分上。保持部（3c）的下表面（3d）与托盘主体的与支撑硅晶片（5）相对且分开的表面（2a）分开，由此形成在氧化膜上的厚度分布可以使硅晶片均匀。托盘具有用于减小支撑构件（3）和托盘主体（2）之间的接触面积的结构，其中保持部分（3c）具有倾斜表面，其内周侧更接近托盘主体表面（ 2a），其与硅晶片相对。

98. 发明授权

US08652340B2 Fabricate self-formed nanometer pore array at wafer scale for DNA sequencing 有权
标题翻译：制造晶圆规模的自制纳米孔阵列进行DNA测序
公开(公告)号：US08652340B2
公开(公告)日：2014-02-18
申请号：US13490618
申请日：2012-06-07
申请人： Gustavo A. Stolovitzky , Deqiang Wang
发明人： Gustavo A. Stolovitzky , Deqiang Wang
IPC分类号： B31D3/00
CPC分类号： C12Q1/6874 , B81C1/00087 , B82Y5/00 , B82Y15/00 , B82Y40/00 , C12Q1/6869 , G01N33/48721 , Y10S977/723 , Y10S977/74 , Y10S977/742 , Y10S977/781 , Y10S977/904 , Y10S977/92 , Y10S977/953 , Y10S977/958 , C12Q2565/631
摘要： A technique is provided for a structure. A substrate has a nanopillar vertically positioned on the substrate. A bottom layer is formed beneath the substrate. A top layer is formed on top of the substrate and on top of the nanopillar, and a cover layer covers the top layer and the nanopillar. A window is formed through the bottom layer and formed through the substrate, and the window ends at the top layer. A nanopore is formed through the top layer by removing the cover layer and the nanopillar.
摘要翻译：为结构提供了一种技术。衬底具有垂直定位在衬底上的纳米柱。在基底下方形成底层。在衬底的顶部和纳米柱的顶部上形成顶层，并且覆盖层覆盖顶层和纳米柱。通过底层形成窗口并形成穿过基底，并且窗口在顶层结束。通过去除覆盖层和纳米柱，通过顶层形成纳米孔。

99. 发明授权

US08585916B2 Micropores and methods of making and using thereof 有权
标题翻译：微孔及其制造和使用方法
公开(公告)号：US08585916B2
公开(公告)日：2013-11-19
申请号：US12812986
申请日：2009-01-21
申请人： Thomas D. Perroud , Kamlesh D. Patel , Robert J. Meagher
发明人： Thomas D. Perroud , Kamlesh D. Patel , Robert J. Meagher
IPC分类号： B31D3/00
CPC分类号： G01N33/5005 , B01F3/0807 , B01F5/0471 , B01F13/0059 , B01L3/502707 , B01L3/502753 , B01L3/502761 , B01L3/502776 , B01L3/502784 , B01L2200/0668 , B01L2300/0816 , B01L2300/0864 , B01L2400/0688 , B81B2201/058 , B81C1/00047 , B81C1/00087 , B81C1/00119 , B81C1/00404 , B81C2201/0133 , B81C2201/0142 , Y10T137/9464 , Y10T428/24479
摘要： Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.
摘要翻译：本文公开的方法是在衬底中的两个各向同性湿蚀刻特征之间制造所需高度和/或宽度的微孔的方法，其包括使用蚀刻剂和小于2×一组的掩模距离的单层各向同性湿蚀刻两个特征蚀刻深度。本文还公开了使用包括微孔的微孔和微流体装置的方法。

100. 发明申请

US20120318049A1 COLUMN FOR CHROMATOGRAPHY, METHOD FOR PRODUCING SAME, AND ANALYSIS DEVICE 审中-公开
标题翻译：色谱柱，其生产方法和分析装置
公开(公告)号：US20120318049A1
公开(公告)日：2012-12-20
申请号：US13581418
申请日：2010-12-24
申请人： Seokhyoung Hong , Tomofumi Kiyomoto , Hiroshi Kobayashi
发明人： Seokhyoung Hong , Tomofumi Kiyomoto , Hiroshi Kobayashi
IPC分类号： B01D15/22 , B31D3/00 , G01N30/60
CPC分类号： G01N30/6095 , B01L3/502761 , B01L2400/0487 , B01L2400/086 , G01N30/6069
摘要： A column for chromatography includes a flow path for allowing a mobile phase, the flow path including mutually-opposing sidewalls and a bottom wall joined to the sidewalls and arranged at bottom ends of the sidewalls; and a plurality of pillars provided to extend along the sidewalls from the bottom wall and regularly arranged at a specified interval. The column is configured to separate individual components from a mixture sample containing multiple kinds of components by using the pillars as a stationary phase. Each of the pillars includes a curved outer surface and the sidewalls partially include a curved surface conforming to the outer surface of each of the pillars. The shortest distance between each of the sidewalls and a pillar positioned closest to said each of the sidewalls is equal to the shortest distance between the pillars in a flow direction of the mobile phase.
摘要翻译：用于层析的柱包括用于允许流动相的流动路径，流动路径包括相互相对的侧壁和连接到侧壁并且布置在侧壁的底端处的底壁; 以及设置成沿着所述侧壁从所述底壁延伸并且以规定的间隔规则地布置的多个柱。该柱被配置为通过使用柱作为固定相从单独的组分与含有多种组分的混合物样品分离。每个支柱包括弯曲的外表面，并且侧壁部分地包括符合每个支柱的外表面的弯曲表面。每个侧壁和最靠近所述每个侧壁的柱之间的最短距离等于在流动相的流动方向上柱之间的最短距离。

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