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91. 发明授权

US07915151B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件和制造这样的器件
公开(公告)号：US07915151B2
公开(公告)日：2011-03-29
申请号：US11543353
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01G9/20 , H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸，具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，甚至小于5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

92. 发明申请

US20110003698A1 MODIFICATION OF SELECTIVITY FOR SENSING FOR NANOSTRUCTURE SENSING DEVICE ARRAYS 有权
标题翻译：用于感应神经传感装置阵列的选择性修改
公开(公告)号：US20110003698A1
公开(公告)日：2011-01-06
申请号：US11938180
申请日：2007-11-09
申请人： Jean-Christophe P. Gabriel , Philip G. Collins , Keith Bradley , George Gruner
发明人： Jean-Christophe P. Gabriel , Philip G. Collins , Keith Bradley , George Gruner
IPC分类号： C40B30/00 , C40B60/12 , C25B1/00
CPC分类号： G01N27/4146 , G01N2035/00158 , Y10S977/70 , Y10S977/701 , Y10S977/84 , Y10S977/882 , Y10S977/883 , Y10S977/902 , Y10S977/92 , Y10S977/953 , Y10S977/957 , Y10T29/49 , Y10T29/49002 , Y10T436/11
摘要： An electronic system for selectively detecting and identifying a plurality of chemical species, which comprises an array of nanostructure sensing devices, is disclosed. Within the array, there are at least two different selectivities for sensing among the nanostructure sensing devices. Methods for fabricating the electronic system are also disclosed. The methods involve modifying nanostructures within the devices to have different selectivity for sensing chemical species. Modification can involve chemical, electrochemical, and self-limiting point defect reactions. Reactants for these reactions can be supplied using a bath method or a chemical jet method. Methods for using the arrays of nanostructure sensing devices to detect and identify a plurality of chemical species are also provided. The methods involve comparing signals from nanostructure sensing devices that have not been exposed to the chemical species of interest with signals from nanostructure sensing devices that have been exposed to the chemical species of interest.
摘要翻译：公开了一种用于选择性地检测和识别包括纳米结构感测装置阵列的多种化学物质的电子系统。在阵列内，在纳米结构感测装置中有至少两种用于感测的不同选择性。还公开了用于制造电子系统的方法。这些方法包括修改装置内的纳米结构以具有感测化学物质的不同选择性。修饰可能涉及化学，电化学和自限制点缺陷反应。这些反应的反应物可以使用浴法或化学喷射法提供。还提供了使用纳米结构感测装置的阵列来检测和识别多种化学物种的方法。该方法涉及将未暴露于感兴趣的化学物质的纳米结构感测装置的信号与已经暴露于感兴趣的化学物质的纳米结构感测装置的信号进行比较。

93. 发明授权

US07781050B2 Ultrathin polymer film using cucurbituril derivative and method of forming the same 有权
标题翻译：使用葫芦素衍生物的超薄聚合物膜及其形成方法
公开(公告)号：US07781050B2
公开(公告)日：2010-08-24
申请号：US11587046
申请日：2005-04-21
申请人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Hyun Oh , Sang Yong Jon
发明人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Hyun Oh , Sang Yong Jon
IPC分类号： C08J5/22 , B32B27/32
CPC分类号： C08J5/18 , B82Y30/00 , C08J2329/02 , Y10S977/882 , Y10S977/883 , Y10S977/897 , Y10T428/31504 , Y10T428/31678
摘要： Provided are an ultrathin polymer film formed by homopolymerization or copolymerization of a cucurbituril derivative with an organic monomer and a method of forming the same. The ultrathin polymer film has a thickness of 10 nm or less, and can retain its film shape even after being separated from a substrate.
摘要翻译：提供了通过葫芦巴衍生物与有机单体的均聚或共聚形成的超薄聚合物膜及其形成方法。超薄聚合物膜的厚度为10nm以下，即使在与基板分离后也能够保持其膜形状。

94. 发明授权

US07700520B2 Methods of making platinum and platinum alloy catalysts with nanonetwork structures 失效
标题翻译：制备具有纳米网络结构的铂和铂合金催化剂的方法
公开(公告)号：US07700520B2
公开(公告)日：2010-04-20
申请号：US10907950
申请日：2005-04-22
申请人： Chun Ching Chien , King Tsai Jeng , Shean Du Chiou , Su Hsine Lin
发明人： Chun Ching Chien , King Tsai Jeng , Shean Du Chiou , Su Hsine Lin
IPC分类号： B01J37/34 , B01J31/00 , B01J21/00
CPC分类号： B01J37/0018 , B01J23/42 , B01J37/16 , B01J37/18 , H01M4/8621 , H01M4/8814 , H01M4/8842 , H01M4/885 , H01M8/1011 , H01M2008/1095 , Y02E60/523 , Y10S977/883
摘要： This invention relates to the preparations of noble metal catalysts, i.e., platinum and platinum alloys, on suitable supports with nanonetwork structures and high catalytic efficiencies. A compact structure of a monolayer or a few layers is formed by self-assembly of organic polymer, e.g., polystyrene (PS), nanospheres or inorganic, i.e., silicon dioxide (SiO2), nanospheres on a support surface. In the void spaces of such a compact arrangement, catalyst is formed by filling with catalyst metal ion-containing aqueous solution and reduced by chemical reduction, or formed by vacuum sputtering. When using organic polymer nanospheres as the starting or structure-directing material, the polymer particles are removed by burning at a high temperature and the catalyst having a nanonetwork structure is obtained. In the case of using silicon dioxide nanospheres as the starting material, silicon dioxide particles are dissolved with hydrofluoric acid solution and evaporated away leading to formation of a similar nanonetwork structure made of catalyst. The catalysts prepared by these methods possess characteristics of robust in structure, uniform in hole size and high in catalytic surface area. Their main applications include uses as catalysts in direct methanol and proton exchange membrane fuel cells, as well as in chemical reactors, fuel reformers, catalytic converters, etc.
摘要翻译：本发明涉及贵金属催化剂即铂和铂合金在具有纳米网络结构和高催化效率的合适载体上的制备。通过在载体表面上自组装有机聚合物，例如聚苯乙烯（PS），纳米球或无机即二氧化硅（SiO 2）纳米球，形成单层或几层的致密结构。在这种紧凑结构的空隙空间中，通过填充含催化剂金属离子的水溶液并通过化学还原减少或通过真空溅射形成催化剂。当使用有机聚合物纳米球作为起始或结构导向材料时，通过在高温下燃烧除去聚合物颗粒，并获得具有纳米网络结构的催化剂。在使用二氧化硅纳米球作为起始材料的情况下，二氧化硅颗粒用氢氟酸溶液溶解并蒸发掉，导致形成由催化剂制成的类似的纳米网络结构。通过这些方法制备的催化剂具有结构坚固，孔尺寸均匀，催化表面积高的特点。其主要应用包括用作直接甲醇和质子交换膜燃料电池中的催化剂，以及化学反应器，燃料重整器，催化转化器等。

95. 发明授权

US07666708B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件，以及制造这样的器件
公开(公告)号：US07666708B2
公开(公告)日：2010-02-23
申请号：US11543352
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L51/40 , D01C5/00 , D01F9/12
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：一种体积掺杂半导体，其为以下至少一种：单晶，细长体和体掺杂半导体，其沿着其纵向的任何点为轴线，具有小于500纳米的最大横截面尺寸，以及具有至少一个具有小于500纳米的最小宽度的部分的独立且体积掺杂的半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，或甚至更小的5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组合技术来从这样的半导体制造设备。

96. 发明授权

US07531218B2 Methods and apparatuses for fluidic self assembly 有权
标题翻译：流体自组装的方法和装置
公开(公告)号：US07531218B2
公开(公告)日：2009-05-12
申请号：US11639858
申请日：2006-12-15
申请人： John Stephen Smith , Mark A. Hadley , Gordon S. W. Craig , Frank Lowe
发明人： John Stephen Smith , Mark A. Hadley , Gordon S. W. Craig , Frank Lowe
IPC分类号： B05D3/12
CPC分类号： H01L24/32 , B82Y30/00 , H01L21/31122 , H01L21/32136 , H01L21/84 , H01L24/24 , H01L24/82 , H01L24/95 , H01L24/97 , H01L25/0655 , H01L25/50 , H01L27/1214 , H01L28/55 , H01L2224/24225 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/95085 , H01L2224/95092 , H01L2224/95122 , H01L2224/95136 , H01L2224/95144 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/01084 , H01L2924/10158 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15153 , H01L2924/15155 , H01L2924/15157 , H01L2924/15165 , H01L2924/15788 , Y10S977/882 , Y10S977/883 , H01L2224/82 , H01L2924/00
摘要： Methods and apparatuses for assembling a structure onto a substrate. A method according to one aspect of the invention includes dispensing a slurry onto a substrate wherein the slurry includes a first plurality of elements, each of which is designed to mate with a receptor region on said substrate and each of which comprises a functional element, and wherein the slurry also includes a second plurality of elements which are not designed to mate with receptor regions on the substrate. Typically, these second plurality of elements help movement of the first plurality of elements.
摘要翻译：将结构组装到基板上的方法和装置。根据本发明的一个方面的方法包括将浆料分配到基底上，其中所述浆料包括第一多个元件，每个元件设计成与所述基底上的受体区域配合，并且每个元件包括功能元件，以及其中所述浆料还包括不被设计成与所述基底上的受体区域配合的第二多个元件。通常，这些第二多个元件有助于第一多个元件的移动。

97. 发明申请

US20080020141A1 METHOD TO APPLY MEMBRANE-LIPIDS TO A SUBSTRATE 有权
标题翻译：将薄膜脂质体应用于基材的方法
公开(公告)号：US20080020141A1
公开(公告)日：2008-01-24
申请号：US11779351
申请日：2007-07-18
申请人： Steven Lenhert , Harald Fuchs
发明人： Steven Lenhert , Harald Fuchs
IPC分类号： B05D7/00 , B05D7/02 , B05D7/06 , B05D7/14
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/713 , Y10S977/783 , Y10S977/849 , Y10S977/855 , Y10S977/857 , Y10S977/883
摘要： A method for applying membrane lipids to a substrate includes providing a substrate and an ink reservoir having an ink including a membrane lipid. The tip of a scanning probe microscope is dipped into the ink so as to dispose the membrane lipid on the tip. The tip of the scanning probe microscope is brought into contact with a surface of the substrate. The tip is moved over regions of the surface so that the membrane lipid migrates from the tip of the scanning probe microscope onto the surface of the substrate in the regions and the membrane lipid organizes itself in the regions in a form of a single lipid layer or in a form of one or a plurality of mutually superposed lipid bilayers. The tip is removed from the surface of the substrate.
摘要翻译：将膜脂质施用于基材的方法包括提供基材和具有包含膜脂质的油墨的油墨储存器。将扫描探针显微镜的尖端浸入墨水中，以将膜脂质置于尖端上。使扫描探针显微镜的尖端与基板的表面接触。尖端在表面的区域上移动，使得膜脂质从扫描探针显微镜的尖端迁移到区域中的基底表面上，并且膜脂质在单个脂质层形式的区域中组织其自身或以一个或多个相互重叠的脂双层的形式。尖端从衬底的表面移除。

98. 发明申请

US20080006888A1 Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines 失效
标题翻译：使用纳米板的纳米机械部件，其制造方法和制造纳米机械的方法
公开(公告)号：US20080006888A1
公开(公告)日：2008-01-10
申请号：US11263476
申请日：2005-10-31
申请人： Yong Yun , Chil Ah , Dong Ha , Hyung Park , Wan Yun , Kwang-Cheol Lee , Gwang Park
发明人： Yong Yun , Chil Ah , Dong Ha , Hyung Park , Wan Yun , Kwang-Cheol Lee , Gwang Park
IPC分类号： H01L21/00
CPC分类号： B81C99/0095 , B81B2201/035 , B81C2201/0143 , Y10S977/883 , Y10S977/888
摘要： Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.
摘要翻译：本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。与其它常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

99. 发明申请

US20070224403A1 Ultrathin Polymer Film Using Cucurbituril Derivative and Method of Forming the Same 有权
标题翻译：使用葫芦素衍生物的超薄聚合物膜及其形成方法
公开(公告)号：US20070224403A1
公开(公告)日：2007-09-27
申请号：US11587046
申请日：2005-04-21
申请人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Oh , Sang Jon
发明人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Oh , Sang Jon
IPC分类号： C08J5/22
CPC分类号： C08J5/18 , B82Y30/00 , C08J2329/02 , Y10S977/882 , Y10S977/883 , Y10S977/897 , Y10T428/31504 , Y10T428/31678
摘要： Provided are an ultrathin polymer film formed by homopolymerization or copolymerization of a cucurbituril derivative with an organic monomer and a method of forming the same. The ultrathin polymer film has a thickness of 10 nm or less, and can retain its film shape even after being separated from a substrate.
摘要翻译：提供了通过葫芦巴衍生物与有机单体的均聚或共聚形成的超薄聚合物膜及其形成方法。超薄聚合物膜的厚度为10nm以下，即使在与基板分离后也能够保持其膜形状。

100. 发明申请

US20070032052A1 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 审中-公开
公开(公告)号：US20070032052A1
公开(公告)日：2007-02-08
申请号：US11543746
申请日：2006-10-04
申请人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

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