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91. 发明申请

US20020025277A1 Solid state membrane channel device for the measurement and characterization of atomic and molecular sized samples 失效
标题翻译：用于测量和表征原子和分子大小样品的固态膜通道器件
公开(公告)号：US20020025277A1
公开(公告)日：2002-02-28
申请号：US09815461
申请日：2001-03-23
发明人： Matthew P. Dugas , Gregory L. Wagner
IPC分类号： G01N027/00
CPC分类号： G01N33/48721 , B81C1/00087 , Y10S977/721 , Y10S977/781
摘要： A solid state device is formed through thin film deposition techniques which results in a self-supporting thin film layer that can have a precisely defined channel bored therethrough. The device is useful in the chacterization of polymer molecules by measuring changes in various electrical characteristics as molecules pass through the channel. To form the device, a thin film layer having various patterns of electrically conductive leads are formed on a silicon substrate. Using standard lithography techniques, a relatively large or micro-scale aperture is bored through the silicon substrate which in turn exposes a portion of the thin film layer. This process does not affect the thin film. Subsequently, a high precision material removal process is used (such as a focused ion beam) to bore a precise nano-scale aperture through the thin film layer that coincides with the removed section of the silicon substrate.
摘要翻译：通过薄膜沉积技术形成固态器件，其产生可以具有穿过其中的精确定义的通道的自支撑薄膜层。该装置通过在分子通过通道时测量各种电特性的变化来用于聚合物分子的特征。为了形成器件，在硅衬底上形成具有各种导电引线图案的薄膜层。使用标准光刻技术，相对较大或微尺度的孔径穿过硅衬底，硅衬底又暴露薄膜层的一部分。该过程不影响薄膜。随后，使用高精度的材料去除工艺（例如聚焦的离子束）来穿过与硅衬底的去除部分重合的薄膜层的精确的纳米尺度孔。

92. 发明申请

US20010001681A1 Method of forming a heterojunction of a carbon nanotube and a different material, method of working a filament of a nanotube 审中-公开
公开(公告)号：US20010001681A1
公开(公告)日：2001-05-24
申请号：US09736220
申请日：2000-12-15
发明人： Yuegang Zhang , Sumio Iijima
IPC分类号： B32B003/02 , B32B031/00 , D02G003/00
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/956 , H01L51/0015 , H01L51/002 , H01L51/0587 , H01L51/0595 , H01L51/42 , Y10S977/721 , Y10S977/742 , Y10S977/744 , Y10S977/842 , Y10S977/844 , Y10T428/21 , Y10T428/2902
摘要： A carbon nanotube is contacted with a reactive substance which is a metal or a semiconductor. The reactive substance is heated to diffuse atoms of the reactive substance into the carbon nanotube so that the carbon nanotube is partially transformed or converted into carbide as a reaction product. Thus, a heterojunction of the reaction product and the carbon nanotube is formed. For example, the carbon nanotube (2) is contacted with a silicon substrate (1). The silicon substrate (1) is heated to cause solid-solid diffusion of Si. As a result, SiC (3) is formed as the heterojunction. At least a part of a filament material of a carbon nanotube is irradiated with electromagnetic wave to deform the filament material.

93. 发明授权

US5871650A Supported zeolite membranes with controlled crystal width and preferred orientation grown on a growth enhancing layer 失效
标题翻译：在生长增强层上生长的具有受控晶体宽度和优选取向的支撑沸石膜
公开(公告)号：US5871650A
公开(公告)日：1999-02-16
申请号：US272361
申请日：1994-07-08
申请人： Wenyih Frank Lai , Harry William Deckman , James Alexander McHenry , Johannes Petrus Verduijn
发明人： Wenyih Frank Lai , Harry William Deckman , James Alexander McHenry , Johannes Petrus Verduijn
IPC分类号： B01D71/02 , B01J37/02 , B01D61/00
CPC分类号： B01D67/0083 , B01D67/0051 , B01D67/0097 , B01D71/028 , B01J37/0244 , B01J37/0246 , B01D2323/08 , B01J2229/64 , B01J2229/66 , Y10S977/701 , Y10S977/721
摘要： The present invention is directed toward a new zeolite membrane which exhibits a columnar cross-sectional morphology and preferred crystallographic orientation comprising a porous substrate having coated thereon a mesoporous growth enhancing layer and a layer of columnar zeolite crystals on said mesoporous growth enhancing layer, and wherein said mesoporous growth enhancing layer comprises nanocrystalline or colloidal sized zeolites, nanocrystalline or colloidal zeolite and metal oxide, or nanocrystalline or colloidal zeolite and colloidal metal, or nanocrystalline or colloidal zeolite, colloidal metal and metal oxide, and wherein said mesoporous growth enhancing layer has interstices of about 20 to about 2000 .ANG., and wherein said columnar zeolite layer is a polycrystalline layer wherein 99.9% of said columnar zeolite crystals have at least one point between adjacent crystals that is .ltoreq.20 .ANG.. The invention is further directed to a process of producing a zeolite membrane exhibiting a columnar crystallographic orientation.
摘要翻译：本发明涉及一种新的沸石膜，其显示出柱状横截面形态和优选的结晶取向，其包括在其上涂覆介孔生长增强层的多孔基材和所述介孔生长增强层上的柱状沸石晶体层，其中所述介孔生长增强层包括纳米晶体或胶体大小的沸石，纳米晶体或胶体沸石和金属氧化物，或纳米晶体或胶体沸石和胶体金属，或纳米晶体或胶体沸石，胶体金属和金属氧化物，并且其中所述介孔生长增强层具有间隙约20至约2000，并且其中所述柱状沸石层是多晶层，其中99.9％的所述柱状沸石晶体在相邻晶体之间具有至少一个点，为20。本发明进一步涉及一种制备呈现柱状结晶取向的沸石膜的方法。

94. 发明授权

US08650749B2 Method for manufacturing graphene electronics 有权
标题翻译：制造石墨烯电子的方法
公开(公告)号：US08650749B2
公开(公告)日：2014-02-18
申请号：US13461696
申请日：2012-05-01
申请人： Ernesto E. Marinero
发明人： Ernesto E. Marinero
IPC分类号： H05K3/02 , H05K3/10
CPC分类号： H05K1/09 , H01L23/53276 , H01L2924/0002 , H05K3/107 , H05K2201/0323 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： An electrical circuit structure employing graphene as a charge carrier transport layer. The structure includes a plurality of graphene layers. Electrical contact is made with one of the layer of the plurality of graphene layers, so that charge carriers travel only through that one layer. By constructing the active graphene layer within or on a plurality of graphene layers, the active graphene layer maintains the necessary planarity and crystalline integrity to ensure that the high charge carrier mobility properties of the active graphene layer remain intact.
摘要翻译：使用石墨烯作为电荷载流子传输层的电路结构。该结构包括多个石墨烯层。电接触由多个石墨烯层中的一个层制成，使得电荷载流子仅行进该层。通过在多个石墨烯层之内或之上构建活性石墨烯层，活性石墨烯层保持必要的平面性和晶体完整性，以确保活性石墨烯层的高电荷载流子迁移率性质保持不变。

95. 发明授权

US08395202B2 Nanoscale floating gate 有权
标题翻译：纳米级浮动门
公开(公告)号：US08395202B2
公开(公告)日：2013-03-12
申请号：US13231371
申请日：2011-09-13
申请人： Gurtej S. Sandhu , D. V. Nirmal Ramaswamy
发明人： Gurtej S. Sandhu , D. V. Nirmal Ramaswamy
IPC分类号： H01L21/336 , H01L29/788 , H01L21/8247
CPC分类号： H01L29/788 , B82Y10/00 , B82Y99/00 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42324 , H01L29/66825 , H01L29/7881 , Y10S977/721 , Y10S977/762
摘要： A memory cell is provided including a tunnel dielectric layer overlying a semiconductor substrate. The memory cell also includes a floating gate having a first portion overlying the tunnel dielectric layer and a second portion in the form of a nanorod extending from the first portion. In addition, a control gate layer is separated from the floating gate by an intergate dielectric layer.
摘要翻译：提供了包括覆盖在半导体衬底上的隧道电介质层的存储单元。存储单元还包括具有覆盖隧道介电层的第一部分的浮动栅极和从第一部分延伸的纳米棒形式的第二部分。此外，控制栅极层通过隔间电介质层与浮置栅极分离。

96. 发明授权

US08394657B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08394657B2
公开(公告)日：2013-03-12
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

97. 发明授权

US08238704B2 Light coupler between an optical fiber and a waveguide made on an SOI substrate 有权
标题翻译：在SOI衬底上制造的光纤和波导之间的光耦合器
公开(公告)号：US08238704B2
公开(公告)日：2012-08-07
申请号：US12569417
申请日：2009-09-29
申请人： Badhise Ben Bakir , Jean-Marc Fedeli
发明人： Badhise Ben Bakir , Jean-Marc Fedeli
IPC分类号： G02B6/30 , G02B6/26 , H01L21/00 , C23F1/00
CPC分类号： G02B6/1228 , G02B6/305 , Y10S977/721 , Y10S977/932
摘要： A light coupler between an optical fiber (6) and a waveguide is made on a semiconductor-on-insulator substrate (1), this substrate (1) comprising a thin layer of semiconducting material in which the waveguide is made. The coupler comprises a light injector (5) and an adiabatic collector (4) made up with an inverted nanotip formed from the thin layer of semiconducting material. The injector (5) is formed on the insulator (3) and has a face (7) for receiving an end of the optical fiber (6). The adiabatic collector (4) has a cross-section which increases from a first end located on the side of said end of the optical fiber (6) right up to a second end which is connected to the waveguide, the injector (5) covering the adiabatic collector (4) and having a rib waveguide shape.
摘要翻译：在绝缘体上半导体衬底（1）上制造光纤（6）和波导管之间的光耦合器，该衬底（1）包括其中制成波导的半导体材料薄层。耦合器包括光注射器（5）和由半导体材料薄层形成的倒置的纳米尖管构成的绝热收集器（4）。喷射器（5）形成在绝缘体（3）上并且具有用于接收光纤（6）的端部的面（7）。绝热收集器（4）具有从位于光纤（6）的所述端部侧的第一端直到连接到波导的第二端部的横截面，所述喷射器（5）覆盖绝热收集器（4）并具有肋波导形状。

98. 发明授权

US08216364B1 System and method for low-power nanotube growth using direct resistive heating 有权
标题翻译：使用直接电阻加热的低功率纳米管生长的系统和方法
公开(公告)号：US08216364B1
公开(公告)日：2012-07-10
申请号：US12102302
申请日：2008-04-14
申请人： Delmar L. Barker , Mead M. Jordan , William R. Owens
发明人： Delmar L. Barker , Mead M. Jordan , William R. Owens
IPC分类号： C30B25/22
CPC分类号： C01B21/0602 , B82Y30/00 , B82Y40/00 , C01B21/064 , C01B32/16 , C01B32/956 , C01B33/02 , C01B35/023 , C01B2202/08 , C01P2004/13 , C30B11/12 , C30B25/00 , C30B29/602 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/734 , Y10S977/742 , Y10S977/743 , Y10S977/75 , Y10S977/751 , Y10S977/752 , Y10S977/813 , Y10S977/814 , Y10S977/822 , Y10T117/10 , Y10T117/1016 , Y10T117/102
摘要： Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.
摘要翻译：直接电阻加热用于从碳和其他材料中生长纳米管。使用CVD或离子注入工艺提供了生长起始的纳米管阵列。这些方法使用间接加热来加热催化剂以引发生长。一旦生长开始，电源连接在基板和纳米管上方的板之间，以通过电流和电阻加热纳米管及其催化剂。材料源为加热的催化剂提供碳或其他材料，以继续纳米管阵列的生长。一旦直接加热开始，可以去除或至少减少间接加热的来源。由于直接电阻加热比间接加热更有效，因此总功耗显着降低。

99. 发明申请

US20120107213A1 Energy Storage Devices Having Electrodes Comprising Nanowires 审中-公开
标题翻译：具有包含纳米线的电极的储能装置
公开(公告)号：US20120107213A1
公开(公告)日：2012-05-03
申请号：US13339214
申请日：2011-12-28
申请人： Jiguang Zhang , Jun Liu , Zhenguo Yang , Guanguang Xia , Leonard S. Fifield , Donghai Wang , Daiwon Choi , Gordon L. Graff , Larry R. Pederson
发明人： Jiguang Zhang , Jun Liu , Zhenguo Yang , Guanguang Xia , Leonard S. Fifield , Donghai Wang , Daiwon Choi , Gordon L. Graff , Larry R. Pederson
IPC分类号： C01B33/00 , C01B21/068 , C01B31/36 , C01B33/113 , B82Y30/00 , B82Y40/00
CPC分类号： H01M4/134 , B82Y30/00 , B82Y40/00 , C01B33/02 , C01B33/113 , H01M4/386 , H01M4/485 , H01M4/58 , H01M10/052 , H01M2004/021 , Y10S977/721 , Y10S977/722 , Y10S977/762 , Y10S977/775 , Y10S977/843
摘要： Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.
摘要翻译：本发明的方法可用于合成具有可控组合物和/或具有多种元素的纳米线。所述方法可以包括用催化剂涂覆包含第一元素的固体粉末颗粒。当加热液体，具有共晶或包晶点的混合相时，催化剂和第一元素应形成。已经涂覆有催化剂的颗粒然后可以被加热到大于或等于共晶或包晶点的温度。在加热期间，引入包括第二元件的蒸气源。蒸汽源与液体，混合相化学相互作用以消耗第一元素并诱导包含纳米线形式的第一和第二元素的产物的冷凝。

100. 发明授权

US08119434B2 Fast p-i-n photodetector with high responsitivity 有权
标题翻译：快速p-i-n光电探测器，具有高响应能力
公开(公告)号：US08119434B2
公开(公告)日：2012-02-21
申请号：US12541235
申请日：2009-08-14
申请人： Guy M. Cohen
发明人： Guy M. Cohen
IPC分类号： H01L29/72
CPC分类号： H01L31/03529 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S977/712 , Y10S977/721 , Y10S977/749 , Y10S977/762 , Y10S977/763 , Y10S977/932 , Y10S977/954
摘要： A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.
摘要翻译：提供了一种横向p-i-n光电探测器，其包括在第一导电类型的半导体衬底上生长的第一导电类型的垂直半导体纳米线阵列。第一导电类型的每个垂直生长的半导体纳米线被厚的外延本征半导体膜包围。现在形成的垂直生长的半导体纳米线 - 本征半导体膜柱（由本征半导体膜包围的半导体纳米线芯构成）之间的间隙然后通过形成与第一导电类型不同的第二导电类型的外延半导体材料来填充。在优选实施例中，第一导电类型的垂直生长的半导体纳米线是n +硅纳米线，本征外延半导体层由本征外延硅组成，并且第二导电类型的外延半导体材料由p +硅组成。

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