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91. 发明申请

US20120312430A1 COPPER ALLOY HAVING HIGH STRENGTH AND HIGH CONDUCTIVITY, AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：具有高强度和高电导率的铜合金及其制备方法
公开(公告)号：US20120312430A1
公开(公告)日：2012-12-13
申请号：US13577512
申请日：2010-10-28
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： C22C9/00 , C22C9/01 , C22C9/04 , C22C9/06 , C22F1/08 , C22C9/02
CPC分类号： C22C9/00 , C22C9/10 , C22F1/08 , H01L23/49579 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a copper alloy having particular benefits for electronic parts and a method for making the same. The alloy having the composition of 0.05 wt % of Fe, 0.025˜0.15 wt % P, 0.01˜0.25 wt % Cr, 0.01˜0.15 wt %, Si 0.01˜0.25 wt % Mg, and the balance of Cu and minor impurities. The method of making the copper alloy includes: forming the molten alloy, casting to obtain an ingot, hot rolling the ingot at 850˜1,000° C., cooling, cold rolling the hot rolled product (after cooling the same), annealing the cold rolled product at 400˜600° C. for 1˜10 hours, intermediate rolling the annealed product with a reduction ratio of 30˜70%, heat treating the intermediate rolled product at 500˜800° C. for 30˜600 seconds, and finishing rolling the heat treated product with a reduction ratio of 20˜40%.
摘要翻译：本发明涉及对电子部件具有特别益处的铜合金及其制造方法。合金的组成为Fe的0.05重量％，P：0.025〜0.15重量％，Cr：0.01〜0.25重量％，0.01〜0.15重量％，Si：0.01〜0.25重量％的Mg，余量的Cu和微量的杂质。制造铜合金的方法包括：形成熔融合金，铸造以获得锭，在850〜1000℃下热轧锭，冷却，冷轧热轧产品（冷却后），退火冷轧制产品在400〜600℃下进行1〜10小时，对退火产物进行中间轧制，减压比为30〜70％，在500〜800℃下热处理30〜600秒，以20〜40％的压下率对热处理产品进行精轧。

92. 发明授权

US08063471B2 Copper alloy sheet for electric and electronic parts 有权
标题翻译：铜合金板用于电气和电子零件
公开(公告)号：US08063471B2
公开(公告)日：2011-11-22
申请号：US12441904
申请日：2007-09-26
申请人： Yasuhiro Aruga , Ryoichi Ozaki , Yosuke Miwa
发明人： Yasuhiro Aruga , Ryoichi Ozaki , Yosuke Miwa
IPC分类号： H01L23/495 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C22C9/04 , C22C9/00 , C22C9/02 , C22F1/08 , H01L23/49579 , H01L2924/0002 , H01L2924/00
摘要： A Cu—Fe—P alloy sheet that is provided with the high strength and with the improved resistance of peel off of oxidation film, in order to deal with problems such as package cracks and peeling, is provided. A copper alloy sheet for electric and electronic parts according to the present invention is a copper alloy sheet containing Fe: 0.01 to 0.50 mass % and P: 0.01 to 0.15 mass %, respectively, with the remainder of Cu and inevitable impurities. A centerline average roughness Ra is 0.2 μm or less and a maximum height Rmax is 1.5 μm or less, and Kurtosis (degree peakedness) Rku of roughness curve is 5.0 or less, in measurement of the surface roughness of the copper alloy sheet in accordance with JIS B0601.
摘要翻译：提供具有高强度并且具有改善的氧化膜剥离性的Cu-Fe-P合金板，以解决诸如包装裂纹和剥离等问题。本发明的电气电子部件用铜合金板是含有Fe：0.01〜0.50质量％，P：0.01〜0.15质量％，余量为Cu和不可避免的杂质的铜合金板。中心线平均粗糙度Ra为0.2μm以下，最大高度Rmax为1.5μm以下，粗糙度曲线的峰值（度峰值）Rku为5.0以下，在根据 JIS B0601。

93. 发明申请

US20100326573A1 COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电/电子元件用铜合金材料及其制造方法
公开(公告)号：US20100326573A1
公开(公告)日：2010-12-30
申请号：US12865451
申请日：2009-01-30
申请人： Kuniteru Mihara , Ryosuke Matsuo , Tatsuhiko Eguchi
发明人： Kuniteru Mihara , Ryosuke Matsuo , Tatsuhiko Eguchi
IPC分类号： C22F1/08 , C22C9/06 , C22C9/02 , C22C9/04
CPC分类号： C22F1/08 , C22C9/06 , C22C9/10 , H01B1/026 , H01L23/49579 , H01L23/49866 , H01L2924/0002 , H05K1/09 , H05K3/202 , H01L2924/00
摘要： An copper alloy material for electric/electronic components containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities, characterized in that its grain size is 3 to 35 μm and size of precipitate containing the both of Co and Si is 5 to 50 nm, electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.
摘要翻译：一种含有0.2〜2质量％Co的Co和0.05〜0.5质量％的Si的电气电子部件用铜合金材料，其余部分由Cu和不可避免的杂质构成，其特征在于，其粒径为3〜35μm，粒径为含有Co和Si两者的析出物为5〜50nm，导电率为50％IACS以上，拉伸强度为500MPa以上，弯曲加工性（R / t）为2以下。

94. 发明授权

US07824963B2 Inkjet printed leadframe 有权
标题翻译：喷墨印刷引线框
公开(公告)号：US07824963B2
公开(公告)日：2010-11-02
申请号：US12626440
申请日：2009-11-25
申请人： Randall L. Walberg , Luu T. Nguyen , Anindya Poddar
发明人： Randall L. Walberg , Luu T. Nguyen , Anindya Poddar
IPC分类号： H01L21/44 , H01L23/495
CPC分类号： H01L21/4821 , H01L21/6835 , H01L23/49579 , H01L24/97 , H01L2221/68345 , H01L2924/14 , H01L2924/00
摘要： Apparatuses and methods for inkjet printing electrical interconnect patterns such as leadframes for integrated circuit devices are disclosed. An apparatus for packaging includes a thin substrate adapted for high temperature processing, and an attach pad and contact regions that are inkjet printed to the thin substrate using a metallic nanoink. The nanoink is then cured to remove liquid content. The residual metallic leadframe or electrical interconnect pattern has a substantially consistent thickness of about 10 to 50 microns or less. An associated panel assembly includes a conductive substrate panel having multiple separate device arrays comprising numerous electrical interconnect patterns each, a plurality of integrated circuit devices mounted on the conductive substrate panel, and a molded cap that encapsulates the integrated circuit devices and associated electrical interconnect patterns. The molded cap is of substantially uniform thickness over each separate device array, and extends into the space between separate device arrays.
摘要翻译：公开了用于集成电路装置的用于喷墨印刷电互连图案的引线框架的装置和方法。一种用于包装的装置包括适于高温处理的薄基板，以及使用金属纳米接头喷墨印刷到薄基板上的连接焊盘和接触区域。然后将nanoink固化以除去液体内容物。剩余的金属引线框架或电互连图案具有约10至50微米或更小的基本一致的厚度。相关联的面板组件包括导电衬底面板，该导电衬底面板具有多个单独的器件阵列，每个单独的器件阵列包括多个电互连图案，每个均包括安装在导电衬底面板上的多个集成电路器件，以及封装集成电路器件和相关联的电互连图案的模制帽。模制帽在每个分离的装置阵列上具有基本均匀的厚度，并且延伸到分离的装置阵列之间的空间中。

95. 发明申请

US20100000637A1 Cu-ni-si system alloy 审中-公开
标题翻译：铜镍系合金
公开(公告)号：US20100000637A1
公开(公告)日：2010-01-07
申请号：US12311401
申请日：2007-09-21
申请人： Takaaki Hatano
发明人： Takaaki Hatano
IPC分类号： C22F1/08 , C22C9/06 , C22C9/04
CPC分类号： H01L23/49579 , C21D1/25 , C22C9/06 , C22F1/00 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides Cu—Ni—Si system alloys for electronic material that with the addition of other alloy elements minimized, simultaneously exhibits enhanced electric conductivity, strength, bendability and stress relaxation performance. There are provided Cu—Ni—Si system alloys comprising 1.2 to 3.5 mass % Ni, Si in a concentration (mass %) of ⅙ to ¼ of Ni concentration (mass %) and the balance Cu and impurities whose total amount is 0.05 mass % or less, the Cu—Ni—Si system alloys having its configuration of crystal grains and width of a precipitate-free zone regulated so as to fall within appropriate ranges by controlling solution treatment conditions, aging treatment conditions and degree of a reduction ratio. Thus, there can be provided copper alloys strip of 55 to 62% IACS electric conductivity and 550 to 700 MPa tensile strength, being free from cracking at 180° bending test of 0 radius and exhibiting a stress relaxation ratio, as measured on heating at 150° C. for 1000 hr, of 30% or less.
摘要翻译：本发明提供了一种用于电子材料的Cu-Ni-Si系合金，其中通过添加其它合金元素最小化，同时表现出增强的导电性，强度，弯曲性和应力松弛性能。提供了Cu-Ni-Si系合金，其含有1.2〜3.5质量％的Ni，Si，其浓度（质量％）为Ni浓度的1/6〜¼（质量％），余量为Cu和总量为0.05的杂质质量％以下，通过控制溶液处理条件，时效处理条件和缩小比例，将其晶粒结构和无沉淀区域宽度的Cu-Ni-Si系合金调节为适当范围。因此，可以提供55〜62％IACS电导率和550〜700MPa拉伸强度的铜合金条，在180°弯曲试验下不发生0°半径的破裂，并显示应力松弛率，如在150℃加热 ℃，1000小时，30％以下。

96. 发明申请

US20090212430A1 CARBON NANOTUBE-BASED CONDUCTIVE CONNECTIONS FOR INTEGRATED CIRCUIT DEVICES 有权
标题翻译：用于集成电路设备的基于碳纳米管的导电连接
公开(公告)号：US20090212430A1
公开(公告)日：2009-08-27
申请号：US11718712
申请日：2005-11-04
申请人： Christopher Wyland
发明人： Christopher Wyland
IPC分类号： H01L23/532 , H01L23/52 , H05K3/10
CPC分类号： B82Y30/00 , B82Y10/00 , H01L23/49579 , H01L23/49877 , H01L24/48 , H01L24/81 , H01L2224/45193 , H01L2224/48091 , H01L2224/48247 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , Y10T29/49162 , H01L2924/00014 , H01L2924/00012
摘要： Electrical connection in an integrated circuit arrangement is facilitated with carbon nanotubes. According to various example embodiments, a carbon nanotube material (120, 135) is associated with another material (130, 125) such as a metal. The carbon nanotube material facilitates the electrical connection between different circuit components.
摘要翻译：利用碳纳米管促进集成电路布置中的电连接。根据各种示例性实施例，碳纳米管材料（120,135）与诸如金属的另一材料（130,125）相关联。碳纳米管材料有助于不同电路部件之间的电连接。

97. 发明授权

US07528485B2 Semiconductor device, power converter device using it, and hybrid vehicle using the power converter device 失效
标题翻译：半导体装置，使用它的功率转换装置，以及使用该功率转换装置的混合动力车辆
公开(公告)号：US07528485B2
公开(公告)日：2009-05-05
申请号：US11191942
申请日：2005-07-29
申请人： Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki
发明人： Toshiaki Morita , Hiroshi Hozoji , Kazuhiro Suzuki
IPC分类号： H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H01L24/84 , H01L23/4928 , H01L23/49579 , H01L24/33 , H01L24/37 , H01L24/40 , H01L2224/27505 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37298 , H01L2224/3754 , H01L2224/37599 , H01L2224/37666 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/351 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor device which uses a semiconductor element having main current input/output electrodes, one and the other of which are extended up to a one surface and a remaining surface of a semiconductor chip respectively for causing one of the input/output electrodes to be contacted with a conductive layer of a insulating substrate, whereby the semiconductor element is supported on or above the insulating substrate. A conductive strip which is made of a composite material of carbon and aluminum or a composite material of carbon and copper is used for connection between the remaining input/output electrode of the semiconductor chip and the conductive layer of the insulating substrate.
摘要翻译：一种半导体器件，其使用具有主电流输入/输出电极的半导体元件，一个并且另一个半导体元件分别延伸到半导体芯片的一个表面和剩余表面，以使得一个输入/输出电极被接触具有绝缘基板的导电层，由此半导体元件被支撑在绝缘基板上或上方。由碳和铝的复合材料或碳和铜的复合材料制成的导电带用于半导体芯片的剩余输入/输出电极和绝缘基板的导电层之间的连接。

98. 发明申请

US20090010797A1 COPPER ALLOY PLATE FOR ELECTRIC AND ELECTRONIC PARTS HAVING BENDING WORKABILITY 有权
标题翻译：具有弯曲工作性能的电气和电子部件的铜合金板
公开(公告)号：US20090010797A1
公开(公告)日：2009-01-08
申请号：US11573041
申请日：2005-08-11
申请人： Yasuhiro Aruga , Katsura Kajihara
发明人： Yasuhiro Aruga , Katsura Kajihara
IPC分类号： C22C9/02 , C22C9/06 , C22C9/04
CPC分类号： H01L23/49579 , C22C9/00 , C22C9/02 , H01L2924/0002 , H01L2924/3011 , H05K1/09 , H05K2201/0355 , H01L2924/00
摘要： A Cu—Fe—P copper alloy sheet which has the high strength and the high electrical conductivity compatible with excellent bendability is provided. The Cu—Fe—P copper alloy sheet contains 0.01% to 3.0% of Fe and 0.01% to 0.3% of P on a percent by mass basis wherein the orientation density of the Brass orientation is 20 or less and the sum of the orientation densities of the Brass orientation, the S orientation, and the Copper orientation is 10 or more and 50 or less in the microstructure of the copper alloy sheet.
摘要翻译：提供了具有高强度和高导电性的Cu-Fe-P铜合金板，具有优异的弯曲性。 Cu-Fe-P铜合金板含有0.01％〜3.0％的Fe和0.01〜0.3％的P，其中黄铜取向的取向密度为20以下，取向密度之和黄铜取向，S取向和铜取向在铜合金板的组织中为10以上且50以下。

99. 发明授权

US07182823B2 Copper alloy containing cobalt, nickel and silicon 有权
标题翻译：含钴，镍和硅的铜合金
公开(公告)号：US07182823B2
公开(公告)日：2007-02-27
申请号：US10610433
申请日：2003-06-30
申请人： Frank N. Mandigo , Peter W. Robinson , Derek E. Tyler , Andreas Boegel , Hans-Achim Kuhn , Frank M. Keppeler , Joerg Seeger
发明人： Frank N. Mandigo , Peter W. Robinson , Derek E. Tyler , Andreas Boegel , Hans-Achim Kuhn , Frank M. Keppeler , Joerg Seeger
IPC分类号： C22C9/06
CPC分类号： C22F1/08 , C22C9/06 , H01L23/49579 , H01L2924/0002 , H01R13/03 , H01L2924/00
摘要： A copper alloy having an improved combination of yield strength and electrical conductivity consists essentially of, by weight, from 1% to 2.5% of nickel, from 0.5% to 2.0% of cobalt, from 0.5% to 1.5% of silicon, and the balance is copper and inevitable impurities. Further, the total nickel plus cobalt content is from 1.7% to 4.3%, the ratio of nickel to cobalt is from 1.01:1 to 2.6:1, the amount of (Ni+Co)/Si is between 3.5 and 6, the electrical conductivity is in excess of 40% IACS and the yield strength is in excess of 95 ksi. An optional inclusion is up 1% of silver. A process to manufacture the alloy includes the sequential steps of (a). casting; (b). hot working; (c). solutionizing; (d). first age annealing; (e). cold working; and (f). second age annealing wherein the second age annealing temperature is less than the first age annealing temperature.
摘要翻译：具有改进的屈服强度和电导率组合的铜合金基本上由重量计包含镍的1％至2.5％，钴的0.5％至2.0％，硅的0.5％至1.5％，其余量是铜和不可避免的杂质。此外，镍和钴的总含量为1.7％〜4.3％，镍与钴的比例为1.01:1〜2.6:1，（Ni + Co）/ Si的含量为3.5〜6，电电导率超过40％IACS，屈服强度超过95ksi。一个可选的包含是银的1％。制造合金的方法包括（a）的顺序步骤。铸件; （b）。热点工作（C）。解决问题（d）。第一次退役; （e）。冷工和（f）。其中第二退火温度低于第一老化退火温度。

100. 发明申请

US20050205953A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050205953A1
公开(公告)日：2005-09-22
申请号：US10874306
申请日：2004-06-24
申请人： Mitsutoshi Nakamura , Hirotaka Amakawa
发明人： Mitsutoshi Nakamura , Hirotaka Amakawa
IPC分类号： H01L23/50 , H01L21/00 , H01L21/02 , H01L21/8242 , H01L21/8244 , H01L23/495 , H01L23/552 , H01L23/556 , H01L27/10 , H01L27/108 , H01L27/11 , H01L29/06 , H01L31/00
CPC分类号： H01L23/556 , H01L23/49579 , H01L27/10805 , H01L27/11 , H01L29/0603 , H01L29/0684 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a silicon substrate having a film thickness smaller than a maximum range of a particle generated by a nuclear reaction between a fast neutron and a silicon atom, and a semiconductor element formed on a surface of the silicon substrate.
摘要翻译：半导体器件包括具有小于由快中子和硅原子之间的核反应产生的粒子的最大范围的膜厚度的硅衬底以及形成在硅衬底的表面上的半导体元件。

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