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91. 发明授权

US4539473A Optically excitable luminescent sensor elements 失效
标题翻译：光学可激发的发光传感元件
公开(公告)号：US4539473A
公开(公告)日：1985-09-03
申请号：US625619
申请日：1984-06-28
申请人： Torgny Brogardh , Christer Ovren
发明人： Torgny Brogardh , Christer Ovren
IPC分类号： G01J5/08 , G01J5/58 , G01K11/20 , G01L1/00 , G01L1/24 , G01L11/02 , H01L31/10 , H01L31/14 , H01L33/00
CPC分类号： G01L11/02 , G01K11/20 , G01L1/24
摘要： A sensor element adaptable for measurement of a physical parameter formed of a crystalline material and emitting luminescent spectra upon excitation by light spectra and the influence of said physical parameter. A first layer emitting luminescent spectra is formed of a semiconductor material containing dopant providing shallow energy levels and recombination centers with a concentration between 10.sup.15 to 10.sup.18 cm.sup.-3, and sandwiched between second and third layers of semiconductor material having low absorption for light excitation of the first layer, and the respective lattice constants of the second and third layers being substantially coincidental with the lattice constant of the first layer. The sensor element is formed of GaAs for the substrate and AlGaAs for the semiconductor layers, with appropriate variation in the concentration Al, Ga, and As for the various layers. Generally, the energy band gap of the layers sandwiching the luminescent emitting layer are higher than that of the emitting layer. In a modified embodiment, GaAs is used as the luminescence emitting layer with covering semiconductor layers of AlGaAs, with appropriate variation in the concentration of Al, Ga and As. In a further modification an additional semiconductor layer of AlGaAs is sandwiched between the active semiconductor layer and a non-active semiconductor layer to reduce or eliminate a shift in the wavelength emission of the sensor element.
摘要翻译：一种传感器元件，适用于测量由结晶材料形成的物理参数，并通过光谱激发后发射发光光谱以及所述物理参数的影响。发射发光光谱的第一层由含有提供浅能级的掺杂剂的半导体材料和浓度在1015至1018cm-3之间的复合中心形成，并且被夹在具有低吸收的第二和第三半导体层之间，用于光激发第一层和第二层和第三层的各自的晶格常数基本上与第一层的晶格常数一致。传感器元件由用于衬底的GaAs和用于半导体层的AlGaAs形成，并且各层的浓度Al，Ga和As的适当变化。通常，夹着发光层的层的能带隙高于发光层的能带隙。在修改实施例中，GaAs被用作具有AlGaAs覆盖半导体层的发光发射层，Al，Ga和As的浓度具有适当的变化。在另外的修改中，将AlGaAs的附加半导体层夹在有源半导体层和非有源半导体层之间以减少或消除传感器元件的波长发射的偏移。

92. 发明授权

US4432239A Apparatus for measuring deformation 失效
标题翻译：用于测量变形的装置
公开(公告)号：US4432239A
公开(公告)日：1984-02-21
申请号：US328477
申请日：1981-12-08
申请人： Anatoly P. Bykov
发明人： Anatoly P. Bykov
IPC分类号： G01B11/16 , G01L1/24
CPC分类号： G01B11/16 , G01L1/24
摘要： Arranged in succession on a common optical axis is a laser, a modulator for shifting the frequency of light produced by the laser, an optical system for forming two light beams, a system of markers formed on the surface of a specimen being tested and a recorder of an interference pattern resulting from the interference of light scattered by the markers.
摘要翻译：在公共光轴上连续排列的是激光器，用于移动由激光器产生的光的频率的调制器，用于形成两个光束的光学系统，形成在被测试样品的表面上的标记系统和记录器由于由标记散射的光的干扰而产生的干涉图案。

93. 发明授权

US4063282A TV fatigue crack monitoring system 失效
标题翻译：电视疲劳裂纹监测系统
公开(公告)号：US4063282A
公开(公告)日：1977-12-13
申请号：US707125
申请日：1976-07-20
申请人： Reginald J. Exton
发明人： Reginald J. Exton
IPC分类号： G01L1/24 , G01N3/32 , H04N7/18
CPC分类号： G01N3/32 , G01L1/24 , G01N2203/0064 , G01N2203/0066 , G01N2203/027
摘要： An apparatus is disclosed for monitoring the development and growth of fatigue cracks in a test specimen subjected to a pulsating tensile load. A plurality of television cameras photograph a test specimen which is illuminated at the point of maximum tensile stress. The television cameras have a modified vidicon tube which has an increased persistence time thereby eliminating flicker in the displayed images.
摘要翻译：公开了一种用于监测经受脉动拉伸载荷的试样中的疲劳裂纹的发展和生长的装置。多个电视摄像机拍摄在最大拉伸应力点照射的试样。电视摄像机具有改进的视频管，其具有增加的持续时间，从而消除所显示的图像中的闪烁。

94. 发明授权

US3517999A Optical strain gauge 失效
公开(公告)号：US3517999A
公开(公告)日：1970-06-30
申请号：US3517999D
申请日：1966-01-07
申请人： ITT
发明人： WEAVER DAVID P
IPC分类号： A61B5/024 , A61B5/08 , A61B5/113 , G01B11/16 , G01L1/24 , G01B11/18
CPC分类号： G01L1/24 , A61B5/02427 , A61B5/0816 , A61B5/1135 , A61B2562/0266 , G01B11/16

95. 发明申请

US20190091872A1 ROBOTS WITH COMPLIANT CONTACT AND GEOMETRY SENSORS HAVING VARYING TOUCH SENSITIVITY AND METHODS FOR PROVIDING THE SAME 审中-公开
公开(公告)号：US20190091872A1
公开(公告)日：2019-03-28
申请号：US15913603
申请日：2018-03-06
申请人： Toyota Research Institute, Inc.
发明人： Alexander Alspach , Russell L. Tedrake , Kunimatsu Hashimoto , Erik C. Sobel
IPC分类号： B25J13/08 , G01L5/00 , G01L1/04
CPC分类号： B25J13/084 , B25J9/1633 , B25J13/085 , B25J18/06 , G01B11/16 , G01L1/04 , G01L1/24 , G01L5/0061 , G01L5/009 , G05B19/18 , G05B2219/39319 , G05B2219/40201 , G05B2219/40253 , Y10S901/09 , Y10S901/30 , Y10S901/46 , Y10S901/47
摘要： Robots having varying touch sensitivity are provided. A robot may include a plurality of deformable sensors with differing levels of depth resolution and spatial resolution for detecting a pose and force associated with an object. Each deformable sensor may have an enclosure comprising a deformable membrane, the enclosure configured to be filled with a medium. Each deformable sensor may further include an optical sensor, disposed within the enclosure, having a field of view configured to be directed toward a bottom surface of the deformable membrane. The robot may also include a first portion and a second portion, each comprising at least one deformable sensor of the plurality of deformable sensors.

96. 发明申请

US20180306658A1 SURFACE REFRACTIVE INDEX MEASUREMENT METHOD AND SURFACE STRESS MEASUREMENT METHOD USING THE SAME 审中-公开
公开(公告)号：US20180306658A1
公开(公告)日：2018-10-25
申请号：US16020195
申请日：2018-06-27
申请人： ORIHARA INDUSTRIAL CO., LTD. , Asahi Glass Company, Limited
发明人： Shuji Orihara , Yoshio Orihara , Satoshi Ogami
IPC分类号： G01L1/24 , G01N21/41 , G01B11/16
CPC分类号： G01L1/241 , G01B11/18 , G01L1/00 , G01L1/24 , G01N21/41
摘要： Disclosed is a method of measuring a surface refractive index of a strengthened glass including causing light to enter a surface layer of the strengthened glass through a liquid provided with a refractive index equivalent to that of a surface of the surface layer; a process of causing the light to be emitted from the strengthened glass through the liquid; converting two types of light components into two types of emission line sequences; capturing an image of the two types of emission line sequences; measuring positions of respective emission lines of the two types of emission line sequences from the image; and calculating refractive indexes of a surface of the strengthened glass corresponding to the two types of light components, or refractive index distributions of the strengthened glass in a depth direction from the surface corresponding to the two types of light components.

97. 发明申请

US20180283942A1 Methods to Correct Spectrum Distortion of FFPI Sensors Induced by Dynamic Wavelength Dependent Attenuation 审中-公开
公开(公告)号：US20180283942A1
公开(公告)日：2018-10-04
申请号：US15524379
申请日：2014-12-23
申请人： Halliburton Energy Services, Inc.
发明人： Mikko Jaaskelainen , Yunmiao Wang
IPC分类号： G01J3/02 , G01J3/26 , G01J3/42 , G01K11/32 , G01L1/24
CPC分类号： G01J3/0218 , G01D5/35312 , G01J3/26 , G01J3/28 , G01J3/42 , G01K11/32 , G01L1/24
摘要： Methods are proposed for compensation of distortion in fiber Fabry-Perot interferometric (FFPI) sensors induced by dynamic wavelength dependent attenuation in subsurface wells. The methods involve measurement techniques that correct the reflective spectrum from one or more FFPI sensors utilizing a background low frequency spectrum for normalization.

98. 发明授权

US10072991B2 Lanthanide and silicon-based nanoparticle pressure sensor and system 有权
公开(公告)号：US10072991B2
公开(公告)日：2018-09-11
申请号：US15073406
申请日：2016-03-17
申请人： The United States of America as Represented by The Secretary of The Army
发明人： Munir H. Nayfeh , Charles P. Marsh , Ghassan K. Al-Chaar
IPC分类号： G01B11/16 , G01L1/24 , G01N21/70
CPC分类号： G01L1/24 , G01L1/247 , G01N21/70
摘要： A nanoparticle sensor apparatus includes a silicon-based nanoparticle having a centrosymmetric crystalline structure. A lanthanide atom embedded within the silicon-based nanoparticle provides light emission when the sensor apparatus undergoes pressure loading. This sensor apparatus may be encapsulated in a polymer matrix to form a nanoparticle sensor matrix apparatus which may be located on or in a structure. To measure the pressure on such a structure, a UV light source illuminates the sensor apparatus. An optical emission detector detects the intensity of light emitted from the sensor in response, while a processor correlates that intensity to the pressure loading.

99. 发明授权

US10067012B2 Stress measurement method and system for optical materials 有权
公开(公告)号：US10067012B2
公开(公告)日：2018-09-04
申请号：US15618145
申请日：2017-06-09
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Wei-Chung Wang , Po-Chi Sung , Zheng-Yong Lu , Yu-Liang Yeh , Po-Yu Chen
IPC分类号： G01L1/24 , G03F1/32 , G01L5/00
CPC分类号： G01L1/24 , G01L1/241 , G01L5/0047 , G03F1/32 , G03F1/82
摘要： A stress measurement method is provided of the present disclosure. The stress measurement method includes an image capturing procedure, a phase shift calculation procedure, an isochromatic intensifying procedure and a transformation procedure. The image capturing procedure is used to capture four light intensity images with four different phase angles of a sample. The phase shift calculation procedure is used to obtain an isochromatic retardation of the sample when the four light intensity images have sufficient light intensity values. The isochromatic intensifying procedure is used to calculate two enhanced light intensity values, the background of intensified isochromatic light intensity value and the amplitude of intensified isochromatic light intensity value to obtain an isochromatic retardation when the sample is in a low stress condition. The transformation procedure is used to transform the isochromatic retardation to a stress value of the sample.

100. 发明授权

US10031089B2 Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer 有权
公开(公告)号：US10031089B2
公开(公告)日：2018-07-24
申请号：US15023254
申请日：2014-05-30
申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Kiyoshi Kojima , Masashi Nakabayashi , Kota Shimomura , Yukio Nagahata
IPC分类号： G01N21/95 , G01N21/65 , G01L1/24 , C30B23/00 , C30B29/36 , C30B33/00 , H01L21/66
CPC分类号： G01N21/9505 , C30B23/00 , C30B29/36 , C30B33/00 , G01L1/24 , G01N21/65 , G01N2201/06113 , H01L22/12
摘要： Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.

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