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91. 发明授权

US07527704B2 Method for preparing film structure comprising ferroelectric single crystal layer 有权
标题翻译：制备包含铁电单晶层的薄膜结构的方法
公开(公告)号：US07527704B2
公开(公告)日：2009-05-05
申请号：US10539886
申请日：2003-07-14
申请人： Jaehwan Eun , Sang-Goo Lee , Byungju Choi , Sungmin Rhim
发明人： Jaehwan Eun , Sang-Goo Lee , Byungju Choi , Sungmin Rhim
IPC分类号： B32B38/10 , H01L21/02 , H01L21/04 , H01L21/77 , H01L21/302 , H01L21/461 , B32B38/18 , H01L21/76 , H01L21/304 , H01L21/306 , H01L21/463 , H01L21/465
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.
摘要翻译：通过将导电粘合剂或金属层将铁电单晶板粘附到基板上，可以有利地用于制造高性能电气或电子部件或器件的铁电单晶的膜结构，铁电单晶板在与基底粘合之前或之后被抛光。

92. 发明授权

US07521134B2 Potassium niobate deposited body and method for manufacturing the same, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效
标题翻译：铌酸钾沉积体及其制造方法，表面声波元件，频率滤波器，振荡器，电子电路和电子设备
公开(公告)号：US07521134B2
公开(公告)日：2009-04-21
申请号：US11334712
申请日：2006-01-18
申请人： Takamitsu Higuchi , Taku Aoyama
发明人： Takamitsu Higuchi , Taku Aoyama
IPC分类号： H01L41/08 , H01L41/00 , H01R9/00 , B32B9/00
CPC分类号： C30B23/02 , C30B29/30 , H01L41/1873 , H01L41/316 , H01L41/319 , H03H9/02574 , Y10T29/42
摘要： A potassium niobate deposited body in accordance with an embodiment of the invention includes an R-plane sapphire substrate, and a potassium niobate layer or a potassium niobate solid solution layer formed above the R-plane sapphire substrate, wherein the potassium niobate layer or the potassium niobate solid solution layer epitaxially grows in a (100) orientation in a pseudo cubic system expression, and the potassium niobate layer or the potassium niobate solid solution layer has a (100) plane that tilts with a [11-20] direction vector as a rotation axis with respect to an R-plane (1-102) of the R-plane sapphire substrate.
摘要翻译：根据本发明的实施方案的铌酸钾沉积体包括R平面蓝宝石衬底和形成在R平面蓝宝石衬底上方的铌酸钾层或铌酸钾固溶体层，其中铌酸钾层或钾铌酸盐固溶体层以假立方体系表达式以（100）取向外延生长，并且铌酸钾层或铌酸钾固溶体层具有以[11-20]方向矢量倾斜的（100）面作为旋转轴相对于R平面蓝宝石衬底的R平面（1-102）。

93. 发明授权

US07507290B2 Flux assisted solid phase epitaxy 失效
标题翻译：助焊剂固相外延
公开(公告)号：US07507290B2
公开(公告)日：2009-03-24
申请号：US10593897
申请日：2005-03-22
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： C30B1/10
CPC分类号： C30B9/08 , C30B3/00 , C30B19/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01L21/3147 , H01L21/31691
摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.
摘要翻译：可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理客观和通量物质。固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

94. 发明授权

US07374612B2 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal 失效
标题翻译：单极化钽酸锂晶体和单极化钽酸锂晶体的制备方法
公开(公告)号：US07374612B2
公开(公告)日：2008-05-20
申请号：US10942960
申请日：2004-09-17
申请人： Yoshiyuki Shiono
发明人： Yoshiyuki Shiono
IPC分类号： C30B29/30
CPC分类号： C30B29/30 , C30B33/02
摘要： A method of producing a lithium-tantalate crystal comprising, at least subjecting a single-polarized lithium-tantalate crystal wherein an optical absorption coefficient at a wave number of 3480 cm−1 is 0.3 cm−1 or less to a heat treatment under a reducing atmosphere at a temperature of not lower than 250° C. and not higher than Curie temperature and a single-polarized lithium-tantalate crystal wherein an optical absorption coefficient at a wave number of 3480 cm−1 is 0.3 cm−1 or less and an electric conductivity is 1×10−12 Ω−1·cm−1 or more. There can be provided a method of producing a single-polarized lithium-tantalate crystal in a short time efficiently wherein the surface charge generated due to a pyroelectric property can be decayed quickly by improving the electric conductivity and a single-polarized lithium-tantalate crystal.
摘要翻译：一种锂钽酸锂晶体的制造方法，其特征在于，至少使波长为3480cm -1的光吸收系数为0.3cm -1的单极化锂钽酸盐晶体，在不低于250℃并且不高于居里温度的还原气氛下进行热处理的1％以下的单极化锂 - 钽酸锂晶体，其中波数的光吸收系数为3480cm -1，为0.3cm -1以下，导电率为1×10 -6Ω-1以上 > .cm ^{-1 或更多。可以提供一种在短时间内有效地制造单极化钽酸锂晶体的方法，其中由于热电性能而产生的表面电荷可以通过改善导电性和单极化的锂 - 钽酸盐晶体而快速衰变。}

95. 发明申请

US20080060381A1 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device 审中-公开
标题翻译：铁电体膜，其制造方法，铁电存储器和压电装置
公开(公告)号：US20080060381A1
公开(公告)日：2008-03-13
申请号：US11976293
申请日：2007-10-23
申请人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
发明人： Takeshi Kijima , Hiromu Miyazawa , Yasuaki Hamada , Eiji Natori
IPC分类号： C03B8/00
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1254 , C23C30/00 , C30B5/00 , C30B29/30 , C30B29/32 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L41/0805 , H01L41/1876 , H01L41/1878 , H01L41/318
摘要： A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要翻译：在Pb（Zr，Ti）O 3 Fe铁电体的B位置中包含至少包含至少一种Nb，V和W中的至少一种的5〜40mol％的铁电体膜，其至少包括浓度为1％以上的铁电体钙钛矿材料的A位离子中的4重配位Si 4+或4+ 4+。这使得能够显着提高铁电体膜的可靠性。

96. 发明授权

US07317859B2 Periodically poled optical crystals and process for the production thereof 有权
标题翻译：定期极化的光学晶体及其生产方法
公开(公告)号：US07317859B2
公开(公告)日：2008-01-08
申请号：US11210590
申请日：2005-08-24
申请人： Henry G. Giesber, III
发明人： Henry G. Giesber, III
IPC分类号： G02B6/10
CPC分类号： C30B7/10 , C30B29/30
摘要： Periodically poled crystals and a hydrothermal growth method for making such are disclosed. Electronically periodically poled crystals are employed as seed crystals in a hydrothermal growth process in order to produce novel crystals having deep ferroelectric domains.
摘要翻译：公开了周期性极化晶体及其制造方法。电子周期性极化晶体在水热生长过程中用作晶种，以产生具有深铁电畴的新晶体。

97. 发明申请

US20070209571A1 Flux Assisted Solid Phase Epitaxy 失效
标题翻译：助焊剂固相外延
公开(公告)号：US20070209571A1
公开(公告)日：2007-09-13
申请号：US10593897
申请日：2005-03-22
申请人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
发明人： Hideomi Koinuma , Yuji Matsumoto , Ryota Takahashi
IPC分类号： C30B19/02
CPC分类号： C30B9/08 , C30B3/00 , C30B19/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01L21/3147 , H01L21/31691
摘要： A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.
摘要翻译：可以提供能够使具有与本体晶体相当的结晶完整性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和在物质的共晶点以下的温度下，在基板上沉积与目标物质共生而不产生任何化合物的物质，并且在不低于该物质的共晶点的温度下对基材进行热处理客观和通量物质。固相反应，即固相扩散，使目标物质和助熔剂物质混合在一起形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

98. 发明申请

US20070199505A1 Optical Medium, An Optical Lens And A Prism 失效
标题翻译：光学介质，光学透镜和棱镜
公开(公告)号：US20070199505A1
公开(公告)日：2007-08-30
申请号：US10599452
申请日：2005-06-22
申请人： Kazuo Fujiura , Tadayuki Imai , Masahiro Sasaura , Kouichirou Nakamura
发明人： Kazuo Fujiura , Tadayuki Imai , Masahiro Sasaura , Kouichirou Nakamura
IPC分类号： C30B15/00
CPC分类号： G03F7/70958 , C30B29/30 , G02B1/02 , Y10S117/902 , Y10S117/918 , Y10T117/1068
摘要： An optical medium having a high refractive index without anisotropy and a wide transmission wavelength is obtained. The cubic crystal material is αβO3, where α is at least one of K, Ba, Sr, Ca, and β is at least one of Ta, Ti. Optimally, the cubic crystal material is KTa1-xNbxO3, where composition x is 0≦x≦0.35. This composition enables to raise refractive index while its phase transition temperature is below a room temperature.
摘要翻译：获得具有高折射率而不具有各向异性和宽的透射波长的光学介质。立方晶体材料是字母a 3，其中α是K，Ba，Sr，Ca和β中的至少一个是Ta，Ti中的至少一种。最佳地，立方晶体材料是组成x为0 <= x <= 0.35的KTa 1-x N x N O 3 3。该组合物能够提高折射率，同时其相变温度低于室温。

99. 发明申请

US20070122337A1 Lithium tantalate substrate and process for its manufacture 有权
标题翻译：钽酸锂基板及其制造工艺
公开(公告)号：US20070122337A1
公开(公告)日：2007-05-31
申请号：US10574277
申请日：2004-10-07
申请人： Tomio Kajigaya , Takashi Kakuta
发明人： Tomio Kajigaya , Takashi Kakuta
IPC分类号： C01G35/00
CPC分类号： C30B29/30 , C30B33/02
摘要： A lithium tantalate substrate obtained by working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment carried out at a temperature kept to from 350 to 600° C., to manufacture a lithium tantalate substrate having volume resistivity which has been controlled within the range of from 1010 to 1013 Ωcm. The substrate obtained has a very low pyroelectricity or no pyroelectricity, and it can be made colored and opaque from a colorless and transparent state and also sufficiently has the properties required as a piezoelectric material.
摘要翻译：通过在基板状态下工作而获得的钽酸锂基板通过Czochralski法生长的钽酸锂晶体被埋入Al和Al 2 O 3 3的混合粉末中，然后在保持在350〜600℃的温度下进行热处理，制造体积电阻率为10〜10℃的钽酸锂基材 > 13 Omegacm。所得到的基板具有非常低的热电性或不具有热电性，并且可以由无色和透明状态制成着色和不透明，并且还充分具有作为压电材料所需的性质。

100. 发明申请

US20060283375A1 Lithium tantalate substrate and method of manufacturing same 审中-公开
公开(公告)号：US20060283375A1
公开(公告)日：2006-12-21
申请号：US11508104
申请日：2006-08-22
申请人： Tomio Kajigaya , Tokashi Kakuta
发明人： Tomio Kajigaya , Tokashi Kakuta
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02
CPC分类号： C30B15/00 , C30B29/30 , C30B33/00 , C30B33/02 , G02F1/3551 , G02F2202/20
摘要： In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.

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