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91. 发明授权

US07645711B2 Semiconductor device fabrication method 失效
公开(公告)号：US07645711B2
公开(公告)日：2010-01-12
申请号：US11106468
申请日：2005-04-15
申请人： Isao Kamioka , Yoshio Ozawa
发明人： Isao Kamioka , Yoshio Ozawa
IPC分类号： H01L21/31
CPC分类号： H01L27/11524 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11529 , H01L2924/0002 , H01L2924/00
摘要： According to the present invention, there is provided a semiconductor device fabrication method comprising: forming a first insulating film on a semiconductor substrate; forming a conductive layer on the first insulating film; exposing the first insulating film by removing a portion of the conductive layer; forming a second insulating film on the exposed surface of the first insulating film in a first processing chamber isolated from an outside; performing a modification process on the second insulating film in the first processing chamber, and then unloading the semiconductor substrate from the first processing chamber to the outside; and annealing the second insulating film in a second processing chamber.

92. 发明申请

US20090308089A1 Control System, Integrated Control Apparatus, And Control Program 有权
标题翻译：控制系统，集成控制装置和控制程序
公开(公告)号：US20090308089A1
公开(公告)日：2009-12-17
申请号：US12485490
申请日：2009-06-16
申请人： Yoshinori Tanabe , Atsushi Ouchi , Yoshio Ozawa
发明人： Yoshinori Tanabe , Atsushi Ouchi , Yoshio Ozawa
IPC分类号： F25D21/06 , G05B15/00
CPC分类号： F25D21/002 , F25B5/02 , F25B2347/021 , F25B2400/22 , F25B2600/2513
摘要： An object of the present invention is to provide a control system, an integrated control apparatus, and a control program that are capable of well maintaining freshness and quality of food articles, by reducing time for performing a recovery operation following a frost removing operation of cooling devices. In response to a start of the frost removing operation of a first showcase, an integrated control apparatus provides a second device controller (device control unit) with a “lower limit cooling instruction (increase instruction)” to increase the refrigerant supplied to a second showcase to an amount larger than that before the frost removing operation starts. In response to the “lower limit cooling instruction (increase instruction),” the second device controller (device control unit) increases the amount of the refrigerant supplied to the second showcase.
摘要翻译：本发明的目的是提供一种控制系统，综合控制装置和控制程序，其能够通过在冷却除霜操作之后减少执行恢复操作的时间来保持食品的新鲜度和质量设备。响应于第一展示柜的霜除去操作的开始，集成控制装置向第二设备控制器（设备控制单元）提供“下限冷却指令（增加指令）”，以增加供应到第二陈列柜的制冷剂达到大于除霜操作开始之前的量。响应于“下限制冷指令（增加指令）”，第二设备控制器（设备控制单元）增加供给第二陈列柜的制冷剂量。

93. 发明申请

US20090294828A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090294828A1
公开(公告)日：2009-12-03
申请号：US12405474
申请日：2009-03-17
申请人： Yoshio Ozawa , Fumiki Aiso
发明人： Yoshio Ozawa , Fumiki Aiso
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L27/11578 , H01L21/8221 , H01L27/11568 , H01L27/11582
摘要： A nonvolatile semiconductor memory device includes: a semiconductor member; a memory film provided on a surface of the semiconductor member and being capable of storing charge; and a plurality of control gate electrodes provided on the memory film, spaced from each other, and arranged along a direction parallel to the surface. Average dielectric constant of a material interposed between one of the control gate electrodes and a portion of the semiconductor member located immediately below the control gate electrode adjacent to the one control gate electrode is lower than average dielectric constant of a material interposed between the one control gate electrode and a portion of the semiconductor member located immediately below the one control gate electrode.
摘要翻译：非易失性半导体存储器件包括：半导体部件; 记录膜，设置在所述半导体构件的表面上并能够存储电荷; 以及设置在所述存储膜上的多个控制栅电极，彼此间隔开并且沿着与所述表面平行的方向布置。插入在一个控制栅电极之间的材料和位于与控制栅电极相邻的控制栅电极正下方的部分的平均介电常数低于介于一个控制栅之间的材料的平均介电常数电极和位于一个控制栅电极正下方的半导体部件的一部分。

94. 发明申请

US20090273021A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090273021A1
公开(公告)日：2009-11-05
申请号：US12432453
申请日：2009-04-29
申请人： Katsuyuki SEKINE , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Katsuaki Natori , Takashi Nakao
发明人： Katsuyuki SEKINE , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Katsuaki Natori , Takashi Nakao
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/4234 , H01L29/7887
摘要： A semiconductor device includes a semiconductor substrate, a tunnel insulating film on the semiconductor substrate, a charge storage layer on the tunnel insulating film, a block insulating film on the charge storage layer, and a control gate electrode on the block insulating film, the charge storage layer including a plurality of layers including first and second charge storage layers, the second charge storage layer being provided on a nearest side of the block insulating film, the first charge storage layer being provided between the tunnel insulating film and the second charge storage layer, the second charge storage layer having a higher trap density than the first charge storage layer, the second charge storage layer having a smaller band gap than the first charge storage layer, and the second charge storage layer having a higher permittivity than the first charge storage layer and a silicon nitride film.
摘要翻译：半导体器件包括半导体衬底，半导体衬底上的隧道绝缘膜，隧道绝缘膜上的电荷存储层，电荷存储层上的块绝缘膜和块绝缘膜上的控制栅电极，电荷存储层，包括包括第一和第二电荷存储层的多个层，所述第二电荷存储层设置在所述块绝缘膜的最近侧，所述第一电荷存储层设置在所述隧道绝缘膜和所述第二电荷存储层之间所述第二电荷存储层具有比所述第一电荷存储层高的陷阱密度，所述第二电荷存储层具有比所述第一电荷存储层更小的带隙，并且所述第二电荷存储层具有比所述第一电荷存储层高的介电常数层和氮化硅膜。

95. 发明授权

US07541233B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07541233B2
公开(公告)日：2009-06-02
申请号：US12007751
申请日：2008-01-15
申请人： Yoshio Ozawa , Shigehiko Saida , Yuji Takeuchi , Masanobu Saito
发明人： Yoshio Ozawa , Shigehiko Saida , Yuji Takeuchi , Masanobu Saito
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/42324 , H01L29/66825
摘要： A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括隧道绝缘膜，所述隧道绝缘膜具有在非易失性的沟道宽度方向周期性且连续变化的膜厚度存储单元，设置在隧道绝缘膜上的浮置栅电极，设置在浮置栅电极上方的控制栅电极，以及设置在控制栅电极和浮栅之间的电极间绝缘膜。

96. 发明授权

US07485918B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07485918B2
公开(公告)日：2009-02-03
申请号：US11797670
申请日：2007-05-07
申请人： Akihito Yamamoto , Yoshio Ozawa
发明人： Akihito Yamamoto , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device including a gate dielectric film provided on at least one site on a surface of a semiconductor substrate, at least one first gate electrode provided on the gate dielectric film, an inter-electrode dielectric film provided while covering a surface of the first gate electrode, at least partial film thickness of a portion covering a portion other than a corner portion that does not come into contact with the gate dielectric film from among a plurality of corner portions of the first gate electrode being formed to be smaller than at least partial film thickness of a portion covering the corner portion that does not come into contact with the gate dielectric film, and a second gate electrode provided while covering a surface of the inter-electrode dielectric film.
摘要翻译：一种半导体器件，包括设置在半导体衬底的表面上的至少一个位置处的栅极电介质膜，设置在栅极电介质膜上的至少一个第一栅电极，设置在覆盖第一栅极的表面的电极间电介质膜所述第一栅电极的多个角部中的与所述栅电介质膜不接触的角部以外的部分的至少部分膜厚成形为小于至少部分覆盖与栅极电介质膜不接触的角部的部分的膜厚度以及覆盖电极间电介质膜的表面的第二栅电极。

97. 发明授权

US07414285B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US07414285B2
公开(公告)日：2008-08-19
申请号：US11870793
申请日：2007-10-11
申请人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
发明人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
IPC分类号： H01L27/108
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.
摘要翻译：非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜，第四绝缘膜和控制栅，并含有硅和氧。

98. 发明申请

US20080087937A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20080087937A1
公开(公告)日：2008-04-17
申请号：US11870793
申请日：2007-10-11
申请人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
发明人： Hiroshi Akahori , Wakako Takeuchi , Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.
摘要翻译：非易失性半导体存储器件包括设置在半导体衬底的表面上的第一绝缘膜，设置在第一绝缘膜上的电荷累积层，设置在电荷累积层上方并含有硅和氮的第二绝缘膜，第三绝缘膜设置在第二绝缘膜上，并且由包含氧的单层绝缘膜或至少其顶层和底层上的膜含有氧的多层堆叠绝缘膜组成，其相对介电常数大于氧化硅膜，设置在第三绝缘膜上并含有硅和氮的第四绝缘膜，设置在第四绝缘膜上方的控制栅极和设置在电荷累积层和第二绝缘膜之间的第五绝缘膜，第四绝缘膜和控制栅，并含有硅和氧。

99. 发明申请

US20070145470A1 Semiconductor device and method of manufacturing the same 审中-公开
公开(公告)号：US20070145470A1
公开(公告)日：2007-06-28
申请号：US11709161
申请日：2007-02-22
申请人： Yoshio Ozawa
发明人： Yoshio Ozawa
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/42336 , H01L29/7883
摘要： A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film provided on the semiconductor substrate, a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in the height direction of the non-volatile memory cell in channel width or length direction there, and being thinnest between a region above the bottom surface of the floating gate electrode and a region below the upper surface thereof, a control gate electrode above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

100. 发明申请

US20070117314A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070117314A1
公开(公告)日：2007-05-24
申请号：US11598053
申请日：2006-11-13
申请人： Yoshio Ozawa
发明人： Yoshio Ozawa
IPC分类号： H01L21/8242
CPC分类号： H01L21/28273 , H01L27/115 , H01L27/11519 , H01L27/11521
摘要： A method of manufacturing a semiconductor device, comprises forming a gate insulating film on a surface of a semiconductor substrate, forming a first group of at least one strip-like gate electrode and a second group of strip-like gate electrodes on a surface of the gate insulating film, each strip-like gate electrode having a first face contacting the gate insulating film, a second face vertically extending from a long side of the first face and a third face curved and extending between the first and second faces, and a gap between the third faces of the adjacent gate electrode being narrower, at the surface of the gate insulating film, than a gap between the second faces of the adjacent gate electrode, and introducing dopant atoms into the surface of the semiconductor substrate through the gaps between the gate electrodes, thereby forming diffusion layers in the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底的表面上形成栅极绝缘膜，在所述半导体衬底的表面上形成第一组至少一个带状栅电极和第二组带状栅极电极栅极绝缘膜，每个带状栅电极具有与栅极绝缘膜接触的第一面，从第一面的长边垂直延伸的第二面和在第一和第二面之间弯曲并延伸的第三面，相邻栅电极的第三面之间的栅极绝缘膜的表面比邻近的栅电极的第二面之间的间隙窄，并且通过这些间隙之间的间隙将掺杂剂原子引入到半导体衬底的表面中从而在半导体衬底中形成扩散层。

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