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    • 93. 发明授权
    • Semiconductor device production method and semiconductor device
    • 半导体装置的制造方法及半导体装置
    • US08525238B2
    • 2013-09-03
    • US13198773
    • 2011-08-05
    • Eiji Yoshida
    • Eiji Yoshida
    • H01L29/76
    • H01L29/1033H01L29/4238H01L29/665H01L29/6653H01L29/6659H01L29/783
    • A semiconductor device production method includes: forming a semiconductor region including a first region, a second region connecting with the first region and having a width smaller than that of the first region, and a third region connecting with the second region and having a width smaller than that of the second region; forming a gate electrode including a first part crossing the third region and a second part extending from the first part across the first region; forming a side wall insulation film on the gate electrode to cover part of the second region while exposing the remaining part of the second region; implanting a second conductivity type impurity into the first region and the remaining part of the second region; performing heat treatment; removing part of the side wall insulation film, and forming a silicide layer on the first region and the remaining part of the second region.
    • 半导体器件制造方法包括:形成包括第一区域的半导体区域,与第一区域连接并且具有比第一区域的宽度小的第二区域,以及与第二区域连接并且具有较小的宽度的第三区域 比第二个地区; 形成包括与所述第三区域交叉的第一部分的栅电极和从所述第一部分延伸穿过所述第一区域的第二部分; 在所述栅电极上形成侧壁绝缘膜以覆盖所述第二区域的一部分,同时暴露所述第二区域的剩余部分; 将第二导电型杂质注入第一区域和第二区域的剩余部分; 进行热处理; 去除所述侧壁绝缘膜的一部分,并且在所述第一区域和所述第二区域的剩余部分上形成硅化物层。
    • 94. 发明授权
    • Connection terminal and AC adapter
    • 连接端子和AC适配器
    • US08391019B2
    • 2013-03-05
    • US12875275
    • 2010-09-03
    • Masatoshi KurodaToru YoshinoEiji YoshidaHirotaka Yamamoto
    • Masatoshi KurodaToru YoshinoEiji YoshidaHirotaka Yamamoto
    • H05K7/14
    • H01R13/111H01R13/24H01R13/6658H01R31/065
    • A connection terminal includes a frame body including first and second support parts positioned to face each other; and a third support part having first and second ends connected to an end of the first support part and an end of the second support part, respectively; first elastic contact pieces provided on the first support part on a first side from which a terminal is to be inserted and having respective first contact parts configured to contact a peripheral surface of the terminal; second elastic contact pieces provided on the second support part on the first side and having respective second contact parts configured to contact the peripheral surface of the terminal and positioned to face the first contact parts; and a third elastic contact piece provided on the frame body on a second side opposite to the first side and configured to contact an end portion of the terminal.
    • 连接端子包括:框架体,其包括被定位成彼此面对的第一和第二支撑部; 以及第三支撑部分,其第一和第二端分别连接到所述第一支撑部分的端部和所述第二支撑部分的端部; 第一弹性接触片,设置在第一支撑部分上,在其第一侧上插入有端子,并且具有构造成接触端子的外周表面的相应的第一接触部分; 第二弹性接触片设置在第一侧上的第二支撑部分上,并且具有相应的第二接触部分,其构造成接触终端的周边表面并定位成面对第一接触部分; 以及第三弹性接触片,其在与所述第一侧相对的第二侧上设置在所述框体上并且被配置为接触所述端子的端部。
    • 99. 发明申请
    • DOI TYPE RADIATION DETECTOR
    • DOI型辐射探测器
    • US20110101229A1
    • 2011-05-05
    • US12999041
    • 2008-10-08
    • Naoko InadamaHideo MurayamaKengo ShibuyaFumihiko NishikidoTaiga YamayaEiji Yoshida
    • Naoko InadamaHideo MurayamaKengo ShibuyaFumihiko NishikidoTaiga YamayaEiji Yoshida
    • G01T1/202
    • G01T1/1644G01T1/2008
    • This aims to provide a DOI type radiation detector in which scintillation crystals arranged two-dimensionally on a light receiving surface to form rectangular section groups in extending directions of the light receiving surface of a light receiving element are stacked up to make a three-dimensional arrangement and responses of the crystals that have detected radiation are made possible to identify at response positions on the light receiving surface, so that a three-dimensional radiation detection position can be obtained. In the DOI type radiation detector, scintillation crystals are right triangle poles extending upwards from the light receiving surface and the response positions on the light receiving surface are characterized. With this structure, DOI identification of a plurality of layers can be carried out by simply performing an Anger calculation of a light receiving element signal.
    • 其目的在于提供一种DOI型放射线检测器,其中,在光接收表面上二维布置的闪烁晶体在光接收元件的光接收表面的延伸方向上形成矩形截面组,以形成三维布置 并且能够检测到辐射的晶体的响应可以在光接收表面上的响应位置处识别,从而可以获得三维辐射检测位置。 在DOI型辐射检测器中,闪烁晶体是从光接收表面向上延伸的直角三角形磁极,并且在光接收表面上的响应位置被表征。 利用这种结构,可以通过简单地执行光接收元件信号的愤怒计算来执行多个层的DOI识别。