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91. 发明申请

US20110002161A1 PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT 审中-公开
标题翻译：相变记忆体选择元件
公开(公告)号：US20110002161A1
公开(公告)日：2011-01-06
申请号：US12497995
申请日：2009-07-06
申请人： Insik Jin , Nurul Amin , Wei Tian , Young Pil Kim , Venugopalan Vaithyanathan , Ming Sun , Chulmin Jung
发明人： Insik Jin , Nurul Amin , Wei Tian , Young Pil Kim , Venugopalan Vaithyanathan , Ming Sun , Chulmin Jung
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2213/75 , G11C2213/76
摘要： A memory cell comprising a phase-change memory cell stacked in series with a resistive switch. The resistive switch has a material switchable between a high resistance state and a low resistance state by the application of a voltage. A plurality of memory cells are used to form a memory array.
摘要翻译：一种存储单元，包括与电阻开关串联堆叠的相变存储单元。电阻开关具有可通过施加电压在高电阻状态和低电阻状态之间切换的材料。使用多个存储单元来形成存储器阵列。

92. 发明申请

US20100110765A1 Non-Volatile Memory Cell with Programmable Unipolar Switching Element 有权
标题翻译：具有可编程单极性开关元件的非易失性存储单元
公开(公告)号：US20100110765A1
公开(公告)日：2010-05-06
申请号：US12497964
申请日：2009-07-06
申请人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
发明人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
IPC分类号： G11C11/14 , G11C11/00 , G11C11/40
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76
摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
摘要翻译：公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程通过在相反的第二方向上的写入电流。开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

93. 发明申请

US20100102308A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER 有权
标题翻译：具有氧化层的可编程电阻记忆体
公开(公告)号：US20100102308A1
公开(公告)日：2010-04-29
申请号：US12390711
申请日：2009-02-23
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L29/12 , H01L29/00 , H01L21/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译：可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

94. 发明申请

US20100084724A1 MEMORY CELL WITH STRESS-INDUCED ANISOTROPY 有权
标题翻译：具有应力诱导异物的记忆细胞
公开(公告)号：US20100084724A1
公开(公告)日：2010-04-08
申请号：US12418911
申请日：2009-04-06
申请人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Stricklin , Olle Gunnar Heinonen , Insik Jin
发明人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Stricklin , Olle Gunnar Heinonen , Insik Jin
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
摘要翻译：具有应力诱导的磁各向异性的磁记忆元件。存储元件具有可切换的磁化方向可转换的铁磁自由层，具有钉扎磁化取向的铁磁参考层和它们之间的非磁性间隔层。自由层可以是圆形的，基本上是圆形的或近似圆形的。

95. 发明申请

US20100032778A1 MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
标题翻译：具有独立阅读和写入功能的磁记录
公开(公告)号：US20100032778A1
公开(公告)日：2010-02-11
申请号：US12326186
申请日：2008-12-02
申请人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
发明人： Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L43/02 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
摘要翻译：公开了具有分离的读和写路径的磁存储器。磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有自由磁化方向。第一磁化取向与第二磁化取向相反。隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。位线电耦合到第二端部。源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

96. 发明申请

US20070211362A1 Readback system providing a combined sample output including multiple samples per bit 有权
标题翻译：回读系统提供组合样本输出，每位包含多个样本
公开(公告)号：US20070211362A1
公开(公告)日：2007-09-13
申请号：US11373742
申请日：2006-03-10
申请人： Shaoping Li , Insik Jin , Kaizhong Gao , Song Xue , Mike Montemorra , Housan Dakroub , Jason Jury
发明人： Shaoping Li , Insik Jin , Kaizhong Gao , Song Xue , Mike Montemorra , Housan Dakroub , Jason Jury
IPC分类号： G11B20/10
CPC分类号： G11B20/14 , G11B5/17 , G11B5/3906 , G11B20/10009 , G11B20/10037 , G11B20/10194 , G11B2005/0008 , G11B2220/2516
摘要： A readback system includes a magnetic sensor that receives a sensor current. The magnetic sensor senses magnetic bits at a bit frequency and generates a sensor output. The readback system includes a channel circuit that modulates the sensor current at a modulation frequency higher than the bit frequency. The channel circuit samples the sensor output and combines multiple samples of the sensor output per magnetic bit into a combined sample output.
摘要翻译：回读系统包括接收传感器电流的磁传感器。磁传感器以位频率感测磁位，并产生传感器输出。回读系统包括一个通道电路，该通道电路以高于位频率的调制频率调制传感器电流。通道电路对传感器输出进行采样，并将每个磁性位的传感器输出的多个样本合并成一个组合的采样输出。

97. 发明授权

US09341686B2 Single-package power meter 有权
标题翻译：单包功率计
公开(公告)号：US09341686B2
公开(公告)日：2016-05-17
申请号：US13882133
申请日：2011-10-26
申请人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
发明人： James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue
IPC分类号： G01R33/09 , G01R21/00 , G01R21/06 , G01R22/10 , G01R15/20
CPC分类号： G01R33/098 , G01R15/205 , G01R21/00 , G01R21/06 , G01R22/10
摘要： A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption.
摘要翻译：公开了一种用于测量连接到电导体的负载消耗的功率的单封装功率计。功率计通过使用磁传感器或通过磁传感器和电容器的组合与电导体电隔离。在负载和其他所需参数下消耗的瞬时功率通过测量负载和电流通过电导体的电流来确定。使用磁传感器测量电流，以检测与流过电导体的电流相关的磁场。电压通过涉及磁传感器的两种可能技术之一来测量，以测量流过与负载并联连接的线圈的电流，或通过使用与负载并联连接的电容耦合分压器。还公开了一种专用集成电路，其控制用于自动量程目的的传感器的偏置电流并且还用于计算期望的参数，例如功率消耗。

98. 发明授权

US09123877B2 Single-chip bridge-type magnetic field sensor and preparation method thereof 有权
标题翻译：单片桥式磁场传感器及其制备方法
公开(公告)号：US09123877B2
公开(公告)日：2015-09-01
申请号：US14009834
申请日：2012-04-01
申请人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
发明人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
IPC分类号： H01L29/82 , H01L43/02 , G01B7/30 , G01R33/09 , G11B5/39 , B82Y10/00
CPC分类号： H01L43/12 , B82Y10/00 , G01B7/30 , G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3993 , G11B2005/3996 , H01L43/02 , H01L43/08
摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
摘要翻译：本发明公开了一种单芯片磁传感器桥的设计和制造方法。传感器桥包括四个磁阻元件。四个磁阻元件中的每一个的钉扎层的磁化被设定在相同的方向上，但是桥的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层的磁化被设定在不同的角度方向。所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。

99. 发明授权

US09123876B2 Single-package bridge-type magnetic-field angle sensor 有权
标题翻译：单封装桥式磁场角传感器
公开(公告)号：US09123876B2
公开(公告)日：2015-09-01
申请号：US14002738
申请日：2012-03-02
申请人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： H01L27/22 , H01L43/02 , G01B7/30 , G01R33/09 , H01L43/08 , G01D5/14
CPC分类号： H01L43/02 , G01B7/30 , G01D5/145 , G01R33/098 , H01L43/08
摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
摘要翻译：公开了一种单包装桥式磁场角传感器，其包括相对于彼此相对旋转90度的一对或多对磁性隧道结传感器芯片，以分别检测正交方向上的两个磁场分量。磁场角传感器可以包括与半导体封装引线互连的一对MTJ全桥或半桥。磁场角传感器可以封装成各种低成本的标准半导体封装。

100. 发明授权

US08872292B2 Push-pull magnetoresistive sensor bridges and mass fabrication method 有权
标题翻译：推挽磁阻传感器桥梁和大量制造方法
公开(公告)号：US08872292B2
公开(公告)日：2014-10-28
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L27/22 , H01L25/04 , G01R33/09 , H01L43/02
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

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