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1. 发明申请

US20100110764A1 PROGRAMMABLE METALLIZATION CELL SWITCH AND MEMORY UNITS CONTAINING THE SAME 有权
标题翻译：可编程金属化单元开关和包含其的存储单元
公开(公告)号：US20100110764A1
公开(公告)日：2010-05-06
申请号：US12497767
申请日：2009-07-06
申请人： Ming Sun , Nurul Amin , Insik Jin , Young Pil Kim , Chulmin Jung , Venugopalan Vaithyanathan , Wei Tian , Hai Li
发明人： Ming Sun , Nurul Amin , Insik Jin , Young Pil Kim , Chulmin Jung , Venugopalan Vaithyanathan , Wei Tian , Hai Li
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/1233 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C13/0011 , G11C13/003 , G11C2213/74 , G11C2213/76 , H01L27/2463 , H01L45/085 , H01L45/1266 , H01L45/14 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.
摘要翻译：一种电子设备，包括：包括有源电极的第一可编程金属化单元（PMC）; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层; 和包括有源电极的第二PMC; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层，其中所述第一和第二PMC以反平行电连接。

2. 发明授权

US08446752B2 Programmable metallization cell switch and memory units containing the same 有权
标题翻译：可编程金属化电池开关和含有相同的存储单元
公开(公告)号：US08446752B2
公开(公告)日：2013-05-21
申请号：US12497767
申请日：2009-07-06
申请人： Ming Sun , Nurul Amin , Insik Jin , Young Pil Kim , Chulmin Jung , Venugopalan Vaithyanathan , Wei Tian , Hai Li
发明人： Ming Sun , Nurul Amin , Insik Jin , Young Pil Kim , Chulmin Jung , Venugopalan Vaithyanathan , Wei Tian , Hai Li
IPC分类号： G11C11/00
CPC分类号： H01L45/1233 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C13/0011 , G11C13/003 , G11C2213/74 , G11C2213/76 , H01L27/2463 , H01L45/085 , H01L45/1266 , H01L45/14 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel.
摘要翻译：一种电子设备，包括：包括有源电极的第一可编程金属化单元（PMC）; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层; 和包括有源电极的第二PMC; 惰性电极; 以及设置在所述有源电极和所述惰性电极之间的固体电解质层，其中所述第一和第二PMC以反平行电连接。

3. 发明申请

US20110002161A1 PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT 审中-公开
标题翻译：相变记忆体选择元件
公开(公告)号：US20110002161A1
公开(公告)日：2011-01-06
申请号：US12497995
申请日：2009-07-06
申请人： Insik Jin , Nurul Amin , Wei Tian , Young Pil Kim , Venugopalan Vaithyanathan , Ming Sun , Chulmin Jung
发明人： Insik Jin , Nurul Amin , Wei Tian , Young Pil Kim , Venugopalan Vaithyanathan , Ming Sun , Chulmin Jung
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2213/75 , G11C2213/76
摘要： A memory cell comprising a phase-change memory cell stacked in series with a resistive switch. The resistive switch has a material switchable between a high resistance state and a low resistance state by the application of a voltage. A plurality of memory cells are used to form a memory array.
摘要翻译：一种存储单元，包括与电阻开关串联堆叠的相变存储单元。电阻开关具有可通过施加电压在高电阻状态和低电阻状态之间切换的材料。使用多个存储单元来形成存储器阵列。

4. 发明授权

US08248836B2 Non-volatile memory cell stack with dual resistive elements 有权
标题翻译：具有双电阻元件的非易失性存储单元堆叠
公开(公告)号：US08248836B2
公开(公告)日：2012-08-21
申请号：US12501751
申请日：2009-07-13
申请人： Insik Jin , YoungPil Kim , Ming Sun , Chulmin Jung , Venugopalan Vaithyanathan , Nurul Amin , Wei Tian , Yong Lu
发明人： Insik Jin , YoungPil Kim , Ming Sun , Chulmin Jung , Venugopalan Vaithyanathan , Nurul Amin , Wei Tian , Yong Lu
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/76
摘要： A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.
摘要翻译：一种非易失性存储单元及其使用方法。在一些实施例中，独立可编程电阻感测存储器（RSM）元件与可编程金属化单元（PMC）开关元件串联连接。在操作中，当开关元件被编程为第一电阻状态时，没有电流通过RSM元件，并且当第二电阻状态被编程到RSM元件时，电流通过RSM元件。

5. 发明申请

US20110007545A1 Non-Volatile Memory Cell Stack with Dual Resistive Elements 有权
标题翻译：具有双电阻元件的非易失性存储单元堆栈
公开(公告)号：US20110007545A1
公开(公告)日：2011-01-13
申请号：US12501751
申请日：2009-07-13
申请人： Insik Jin , YoungPil Kim , Ming Sun , Chulmin Jung , Venugopalan Vaithyanathan , Nurul Amin , Wei Tian , Yong Lu
发明人： Insik Jin , YoungPil Kim , Ming Sun , Chulmin Jung , Venugopalan Vaithyanathan , Nurul Amin , Wei Tian , Yong Lu
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/76
摘要： A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element.
摘要翻译：一种非易失性存储单元及其使用方法。在一些实施例中，独立可编程电阻感测存储器（RSM）元件与可编程金属化单元（PMC）开关元件串联连接。在操作中，当开关元件被编程为第一电阻状态时，没有电流通过RSM元件，并且当第二电阻状态被编程到RSM元件时，电流通过RSM元件。

6. 发明授权

US08289751B2 Non-volatile memory cell with programmable unipolar switching element 有权
标题翻译：具有可编程单极开关元件的非易失性存储单元
公开(公告)号：US08289751B2
公开(公告)日：2012-10-16
申请号：US13117849
申请日：2011-05-27
申请人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
发明人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76
摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
摘要翻译：公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程通过在相反的第二方向上的写入电流。开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

7. 发明申请

US20110228599A1 Non-Volatile Memory Cell with Programmable Unipolar Switching Element 有权
标题翻译：具有可编程单极性开关元件的非易失性存储单元
公开(公告)号：US20110228599A1
公开(公告)日：2011-09-22
申请号：US13117849
申请日：2011-05-27
申请人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
发明人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
IPC分类号： G11C11/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76
摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
摘要翻译：公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程通过在相反的第二方向上的写入电流。开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

8. 发明申请

US20100110765A1 Non-Volatile Memory Cell with Programmable Unipolar Switching Element 有权
标题翻译：具有可编程单极性开关元件的非易失性存储单元
公开(公告)号：US20100110765A1
公开(公告)日：2010-05-06
申请号：US12497964
申请日：2009-07-06
申请人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
发明人： Wei Tian , Nurul Amin , Insik Jin , Ming Sun , Venu Vaithyanathan , YoungPil Kim , Chulmin Jung
IPC分类号： G11C11/14 , G11C11/00 , G11C11/40
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/56 , G11C2213/76
摘要： A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
摘要翻译：公开了一种具有可编程单极开关元件的非易失性存储单元，以及编程存储器元件的方法。在一些实施例中，存储单元包括与可编程单极性电阻感测开关元件串联连接的可编程双极性电阻读出存储元件。通过在所选择的方向上通过单元施加选择的写入电流将存储元件编程为所选择的电阻状态，其中通过沿第一方向的写入电流来编程第一电阻电平，并且其中第二电阻电平被编程通过在相反的第二方向上的写入电流。开关元件被编程为所选择的电阻水平以便于访问存储元件的所选择的电阻状态。

9. 发明申请

US20100124106A1 MAGNETIC MEMORY WITH MAGNETIC TUNNEL JUNCTION CELL SETS 有权
标题翻译：磁性记忆与磁性隧道连接电池组
公开(公告)号：US20100124106A1
公开(公告)日：2010-05-20
申请号：US12272896
申请日：2008-11-18
申请人： Young Pil Kim , Chulmin Jung , Hyung-Kew Lee , Insik Jin , Michael Xuefei Tang
发明人： Young Pil Kim , Chulmin Jung , Hyung-Kew Lee , Insik Jin , Michael Xuefei Tang
IPC分类号： G11C11/14 , G11C7/00 , G11C11/409
CPC分类号： G11C11/1673 , G11C11/161
摘要： A memory apparatus having at least one memory cell set comprising a first spin torque memory cell electrically connected in series to a second spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The memory cell set itself is configured to switch between a high resistance state and a low resistance state. The memory apparatus also has at least one reference cell set comprising a third spin torque memory cell electrically connected in anti-series to a fourth spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The reference cell set itself has a reference resistance that is a midpoint of the high resistance state and the low resistance state of the memory cell set.
摘要翻译：一种存储装置，具有至少一个存储单元组，其包括与第二自旋转矩存储单元串联电连接的第一自旋转矩存储单元，每个自旋转矩存储单元被配置为在高电阻状态和低电阻状态之间切换。存储单元组自身被配置为在高电阻状态和低电阻状态之间切换。存储装置还具有至少一个参考单元组，其包括与第四自旋转矩存储单元反串联电连接的第三自旋转矩存储单元，每个自旋转矩存储单元被配置为在高电阻状态和低电阻之间切换州。参考单元组本身具有作为存储单元组的高电阻状态和低电阻状态的中点的参考电阻。

10. 发明授权

US07800941B2 Magnetic memory with magnetic tunnel junction cell sets 有权
标题翻译：具有磁性隧道结电池组的磁存储器
公开(公告)号：US07800941B2
公开(公告)日：2010-09-21
申请号：US12272896
申请日：2008-11-18
申请人： Young Pil Kim , Chulmin Jung , Hyung-Kew Lee , Insik Jin , Michael Xuefei Tang
发明人： Young Pil Kim , Chulmin Jung , Hyung-Kew Lee , Insik Jin , Michael Xuefei Tang
IPC分类号： G11C11/15
CPC分类号： G11C11/1673 , G11C11/161
摘要： A memory apparatus having at least one memory cell set comprising a first spin torque memory cell electrically connected in series to a second spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The memory cell set itself is configured to switch between a high resistance state and a low resistance state. The memory apparatus also has at least one reference cell set comprising a third spin torque memory cell electrically connected in anti-series to a fourth spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The reference cell set itself has a reference resistance that is a midpoint of the high resistance state and the low resistance state of the memory cell set.
摘要翻译：一种存储装置，具有至少一个存储单元组，其包括与第二自旋转矩存储单元串联电连接的第一自旋转矩存储单元，每个自旋转矩存储单元被配置为在高电阻状态和低电阻状态之间切换。存储单元组自身被配置为在高电阻状态和低电阻状态之间切换。存储装置还具有至少一个参考单元组，其包括与第四自旋转矩存储单元反串联电连接的第三自旋转矩存储单元，每个自旋转矩存储单元被配置为在高电阻状态和低电阻之间切换州。参考单元组本身具有作为存储单元组的高电阻状态和低电阻状态的中点的参考电阻。

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