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    • 92. 发明授权
    • Method of storing data in blocks per operation
    • 每个操作以块的形式存储数据的方法
    • US07239573B2
    • 2007-07-03
    • US11111729
    • 2005-04-22
    • David HoWei Yang
    • David HoWei Yang
    • G11C8/00
    • G06F3/0656G06F3/0613G06F3/0679G11C5/04
    • The present invention is to provide a method of storing data for driving an MMC or SD under an operating system (e.g., Linux), which comprises the steps of collecting data in a plurality of discreet blocks of a high-speed buffer for each writing request made by a device driver under the OS; temporarily storing data in a plurality of continuous blocks of another buffer; and writing data from the continuous blocks of another buffer into a continuous block of the MMC or the SD in one operation in the form of multiple blocks in due time. By utilizing this method, data writing speed is significantly increased.
    • 本发明提供一种在操作系统(例如Linux)下存储用于驱动MMC或SD的数据的方法,其包括以下步骤:在每个写入请求的高速缓冲器的多个离散块中收集数据 由操作系统下的设备驱动程序制作; 将数据临时存储在另一缓冲器的多个连续块中; 并且在一段时间内以多个块的形式将数据从另一缓冲器的连续块写入到MMC或SD的连续块中。 通过利用该方法,数据写入速度显着增加。
    • 94. 发明申请
    • Method of storing data in blocks per operation
    • 每个操作以块的形式存储数据的方法
    • US20060136675A1
    • 2006-06-22
    • US11111729
    • 2005-04-22
    • David HoWei Yang
    • David HoWei Yang
    • G06F12/00
    • G06F3/0656G06F3/0613G06F3/0679G11C5/04
    • The present invention is to provide a method of storing data for driving an MMC or SD under an operating system (e.g., Linux), which comprises the steps of collecting data in a plurality of discreet blocks of a high-speed buffer for each writing request made by a device driver under the OS; temporarily storing data in a plurality of continuous blocks of another buffer; and writing data from the continuous blocks of another buffer into a continuous block of the MMC or the SD in one operation in the form of multiple blocks in due time. By utilizing this method, data writing speed is significantly increased.
    • 本发明提供一种在操作系统(例如Linux)下存储用于驱动MMC或SD的数据的方法,其包括以下步骤:在每个写入请求的高速缓冲器的多个离散块中收集数据 由操作系统下的设备驱动程序制作; 将数据临时存储在另一缓冲器的多个连续块中; 并且在一段时间内以多个块的形式将数据从另一缓冲器的连续块写入到MMC或SD的连续块中。 通过利用该方法,数据写入速度显着增加。
    • 100. 发明授权
    • Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making
    • 高取向磁性薄膜,记录介质,换能器,由其制成的装置和制造方法
    • US06248416B1
    • 2001-06-19
    • US08967669
    • 1997-11-10
    • David N. LambethDavid E. LaughlinWei YangHeng GongJie Ziou
    • David N. LambethDavid E. LaughlinWei YangHeng GongJie Ziou
    • G11B566
    • G11B5/667G11B5/7325Y10T428/12611Y10T428/265
    • The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The recording medium includes a magnetic recording layer comprised of Co-based material, such as Co or one or more Co alloys having a (10{overscore (1)}0) crystal texture, a substrate, a first underlayer having a fcc structure and a (110) crystal texture disposed between the substrate and the magnetic recording layer. A second underlayer having a bcc structure and a (112) crystal texture is also disposed between the magnetic recording layer and the first underlayer. In particular, if a (110) Si single crystal substrate is non-oxidized certain metals having fcc structures, such as Ag, Cu, Al, and Au and fcc derivative structures, such L10 and L12 structures, can be epitaxially grown on the Si surface. While the one unit cell to one unit cell lattice match between fcc Ag and A4 (diamond) Si is quite poor, multiples of the Ag unit cell distance fit very well on the Si surface. The long range order of the Si surface induces the epitaxial growth of the Ag fcc structure. Upon this fcc structure, a bcc structure, such as Cr, or a bcc derivative, such as B2, DO3 and/or L21 can be epitaxially grown.
    • 本发明提供了由其构成的磁和磁光记录介质,换能器和数据存储装置,其具有在膜的晶体结构中具有长距离顺序的高取向膜。 记录介质包括由Co基材料组成的磁记录层,例如Co或具有(10 {overscore(1)} O)晶体结构的一种或多种Co合金,衬底,具有fcc结构的第一底层和 设置在基板和磁记录层之间的(110)晶体结构。 具有bcc结构和(112)晶体结构的第二底层也设置在磁记录层和第一底层之间。 特别地,如果(110)Si单晶衬底不被氧化,则可以在Si上外延生长具有fcc结构的某些金属,例如Ag,Cu,Al和Au以及fcc衍生结构,如L10和L12结构 表面。 虽然fcc Ag和A4(金刚石)Si之间的一个单元电池与一个单元电池晶格匹配相当差,但是Ag单元电池距离的倍数在Si表面上很好地匹配。 Si表面的长距离顺序引起Ag fcc结构的外延生长。 在该fcc结构中,可以外延生长诸如Cr的bcc结构或bcc衍生物,例如B2,DO3和/或L21。