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1. 发明授权

US06248416B1 Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making 失效
标题翻译：高取向磁性薄膜，记录介质，换能器，由其制成的装置和制造方法
公开(公告)号：US06248416B1
公开(公告)日：2001-06-19
申请号：US08967669
申请日：1997-11-10
申请人： David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
发明人： David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
IPC分类号： G11B566
CPC分类号： G11B5/667 , G11B5/7325 , Y10T428/12611 , Y10T428/265
摘要： The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The recording medium includes a magnetic recording layer comprised of Co-based material, such as Co or one or more Co alloys having a (10{overscore (1)}0) crystal texture, a substrate, a first underlayer having a fcc structure and a (110) crystal texture disposed between the substrate and the magnetic recording layer. A second underlayer having a bcc structure and a (112) crystal texture is also disposed between the magnetic recording layer and the first underlayer. In particular, if a (110) Si single crystal substrate is non-oxidized certain metals having fcc structures, such as Ag, Cu, Al, and Au and fcc derivative structures, such L10 and L12 structures, can be epitaxially grown on the Si surface. While the one unit cell to one unit cell lattice match between fcc Ag and A4 (diamond) Si is quite poor, multiples of the Ag unit cell distance fit very well on the Si surface. The long range order of the Si surface induces the epitaxial growth of the Ag fcc structure. Upon this fcc structure, a bcc structure, such as Cr, or a bcc derivative, such as B2, DO3 and/or L21 can be epitaxially grown.
摘要翻译：本发明提供了由其构成的磁和磁光记录介质，换能器和数据存储装置，其具有在膜的晶体结构中具有长距离顺序的高取向膜。记录介质包括由Co基材料组成的磁记录层，例如Co或具有（10 {overscore（1）} O）晶体结构的一种或多种Co合金，衬底，具有fcc结构的第一底层和设置在基板和磁记录层之间的（110）晶体结构。具有bcc结构和（112）晶体结构的第二底层也设置在磁记录层和第一底层之间。特别地，如果（110）Si单晶衬底不被氧化，则可以在Si上外延生长具有fcc结构的某些金属，例如Ag，Cu，Al和Au以及fcc衍生结构，如L10和L12结构表面。虽然fcc Ag和A4（金刚石）Si之间的一个单元电池与一个单元电池晶格匹配相当差，但是Ag单元电池距离的倍数在Si表面上很好地匹配。 Si表面的长距离顺序引起Ag fcc结构的外延生长。在该fcc结构中，可以外延生长诸如Cr的bcc结构或bcc衍生物，例如B2，DO3和/或L21。

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