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    • 93. 发明申请
    • Structure and method for dual-gate FET with SOI substrate
    • 具有SOI衬底的双栅极FET的结构和方法
    • US20060240610A1
    • 2006-10-26
    • US11265464
    • 2005-11-02
    • Edward NowakRichard Williams
    • Edward NowakRichard Williams
    • H01L21/8234
    • H01L29/785H01L29/41791H01L29/42384H01L29/66795H01L2029/7858
    • A method of forming a dual gate fin-type field effect transistor (FinFET) structure patterns silicon fins over an insulator and patterns a gate conductor at an angle to the fins. The gate conductor is formed laterally adjacent to and over center portions of the fins. The gate conductor is planarized such that the gate conductor is separated into distinct gate conductor portions that are separated by the fins. These gate conductor portions include front gates and back gates. The front gates and the back gates alternate along the structure, such that each fin has a front gate on one side and a back gate on the opposite side. Then front gate wiring is formed to the front gates and back gate wiring is formed to the back gates.
    • 形成双栅极鳍型场效应晶体管(FinFET)结构的方法在绝缘体上形成硅散热片,并以与鳍片成角度的方式形成栅极导体。 栅极导体横向地形成在鳍片的中心部分附近并且越过其中心部分。 栅极导体被平坦化,使得栅极导体分离成由鳍分开的不同的栅极导体部分。 这些栅极导体部分包括前门和后门。 前门和后门沿着结构交替,使得每个鳍具有一侧的前门和相对侧上的后门。 然后,前栅极布线形成于前栅极,并且后栅极布线形成于后栅极。
    • 95. 发明申请
    • STRUCTURE AND METHOD FOR MIXED-SUBSTRATE SIMOX TECHNOLOGY
    • 混合底物SIMOX技术的结构与方法
    • US20060163687A1
    • 2006-07-27
    • US10905857
    • 2005-01-24
    • Richard Williams
    • Richard Williams
    • H01L29/00
    • H01L21/76243
    • The present invention provides a semiconductor structure that includes a substrate having a crystal lattice; a first structure formed in a first region of the substrate, the first structure includes at least a heterostructure that generates a lattice stress in said crystal lattice in the first region; and a second structure surrounding the first structure for preventing lattice stress from propagating outward from the first region of the substrate. The present invention also provides various methods for forming the semiconductor structure as well as other like structures.
    • 本发明提供一种包括具有晶格的基板的半导体结构; 形成在所述基板的第一区域中的第一结构,所述第一结构至少包括在所述第一区域中在所述晶格中产生晶格应力的异质结构; 以及围绕所述第一结构的第二结构,用于防止晶格应力从所述衬底的所述第一区域向外传播。 本发明还提供了用于形成半导体结构以及其它类似结构的各种方法。
    • 99. 发明授权
    • Multi-stage filtered optical amplifier
    • 多级滤波光放大器
    • US07006280B2
    • 2006-02-28
    • US10726458
    • 2003-12-03
    • Kao-Yang HuangJohn R. CostelloeRichard Williams
    • Kao-Yang HuangJohn R. CostelloeRichard Williams
    • H04B10/12
    • H01S3/06754H01S3/10023H01S2301/04
    • A multistage amplifier is disclosed for amplifying light over a wavelength band. A first and second span of amplifying fiber are optically coupled and a gain flattening filter (GFF) in-line with one of two spans of amplifying fiber is provided for attenuating certain wavelengths of amplified light. A first gain spectral response of the first and second spans of amplifying fiber including the GFF are measured over the wavelength band, and the shape of a ripple that oscillates as a function of wavelength in the form of a plurality of peaks or maxima and valleys in the form of minima occur at a plurality of different wavelengths, each different wavelength corresponding to a different channel. A second filter is provided finishing or compensating filter having a second spectral response that has a second plurality of peaks in the form of maxima and valleys in the form of minima is provided. The second filter is designed so that the second spectral response is absent at least 50% of four most predominant peaks or valleys at channels where peaks or valleys, respectively, were present in the first spectral response. The maximum ripple amplitude in the second spectral response is less than a maximum ripple amplitude in the first gain spectral response. This arrangement lessens unwanted effects of systematic error occurring when filters having similar ripple responses with wavelength are cascaded.
    • 公开了一种用于在波长带上放大光的多级放大器。 放大光纤的第一和第二跨度是光学耦合的,并且提供与两个放大光纤的跨距之一成对的增益平坦化滤光器(GFF),用于衰减某些波长的放大光。 在波长带上测量包括GFF的放大光纤的第一和第二跨度的第一增益光谱响应,以及以多个峰值或最大值和谷值形式的波长的函数振荡的纹波的形状 最小的形式出现在多个不同的波长处,每个不同的波长对应于不同的通道。 提供了第二滤光器,其具有第二光谱响应的精加工或补偿滤光器,所述第二光谱响应具有以最小值形式的最大值和谷值形式的第二多个峰值。 第二个滤光片被设计成使得第二光谱响应在第一光谱响应中分别存在峰或谷的通道处不存在四个最主要的峰或谷中的至少50%。 第二光谱响应中的最大纹波幅度小于第一增益光谱响应中的最大纹波幅度。 当具有波长相似的波纹响应的滤波器级联时,这种布置减少了发生的系统误差的不期望的影响。