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    • 92. 发明授权
    • Compound, positive resist composition and method for forming resist pattern
    • 化合物,正性抗蚀剂组合物和形成抗蚀剂图案的方法
    • US08017300B2
    • 2011-09-13
    • US12299371
    • 2007-03-20
    • Daiju ShionoTaku HirayamaHideo Hada
    • Daiju ShionoTaku HirayamaHideo Hada
    • G03F7/004G03F7/039G03F7/20G03F7/30
    • C07C69/712C07C2603/74G03F7/0045G03F7/0392
    • Disclosed are a compound that can be used for a resist composition, a positive resist composition that includes the compound, and a method for forming a resist pattern.Specifically disclosed is a compound represented by a formula (A-1). In the formula (A-1), R11 to R17 each represents an alkyl group or an aromatic hydrocarbon group; g and j each represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater, provided that g+j+k+q is not greater than 5; b represents an integer of 1 or greater, and l and m each represents an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represents an integer of 0 or greater, provided that c+n+o is not greater than 4; A represents a trivalent aromatic cyclic group, alkyl group or aliphatic cyclic group, or a trivalent organic group having an aromatic cyclic group or an aliphatic cyclic group; and Z represents a group represented by a formula (z1). In the formula (z1), Y represents an alkylene group, a divalent aromatic hydrocarbon group or aliphatic cyclic group, or a divalent organic group having an aromatic hydrocarbon group or an aliphatic cyclic group; and R′ represents an acid dissociable, dissolution inhibiting group.
    • 公开了可用于抗蚀剂组合物的化合物,包含该化合物的正型抗蚀剂组合物和形成抗蚀剂图案的方法。 具体公开的是由式(A-1)表示的化合物。 式(A-1)中,R 11〜R 17表示烷基或芳香族烃基, g和j各自表示1或更大的整数,并且k和q各自表示0或更大的整数,条件是g + j + k + q不大于5; b表示1或更大的整数,并且l和m各自表示0或更大的整数,条件是b + 1 + m不大于4; c表示1或更大的整数,并且n和o各自表示0或更大的整数,条件是c + n + o不大于4; A表示三价芳族环状基团,烷基或脂肪族环状基团,或具有芳香族环状基团或脂肪族环状基团的三价有机基团, Z表示由式(z1)表示的基团。 式(z1)中,Y表示亚烷基,二价芳香族烃基或脂肪族环状基团,或具有芳香族烃基或脂肪族环状基团的二价有机基团, 并且R'表示酸解离,溶解抑制基团。
    • 93. 发明授权
    • Positive resist composition and method of forming resist pattern
    • 正型抗蚀剂组合物和形成抗蚀剂图案的方法
    • US07855044B2
    • 2010-12-21
    • US11993005
    • 2006-06-16
    • Masaru TakeshitaHideo HadaTakeshi Iwai
    • Masaru TakeshitaHideo HadaTakeshi Iwai
    • G03F7/004G03F7/30
    • G03F7/0397C08F220/28G03F7/0045Y10S430/111
    • A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.
    • 包含树脂组分(A)和酸产生剂组分(B)的正型抗蚀剂组合物,所述树脂组分(A)包含具有衍生自具有单环或多环基团的丙烯酸酯的结构单元(a1)的共聚物(A1) 含有可离解的溶解抑制基团,衍生自具有含内酯环状基团的丙烯酸酯的结构单元(a2),衍生自具有羟基和/或含氰基的丙烯酸酯的结构单元(a3) 多环基和由以下通式(a4-1)表示的结构单元(a4):其中R表示氢原子,卤素原子,低级烷基或卤代低级烷基; R'表示氢原子,低级烷基或碳原子数1〜5的烷氧基。 f表示0或1。
    • 95. 发明申请
    • COMPOUND, METHOD FOR PRODUCING SAME, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    • 化合物,其生产方法,阳性组合物和形成耐药性图案的方法
    • US20100183974A1
    • 2010-07-22
    • US12067255
    • 2006-09-13
    • Daiju ShionoTakahiro DazaiTaku HirayamaKohei KasaiHideo Hada
    • Daiju ShionoTakahiro DazaiTaku HirayamaKohei KasaiHideo Hada
    • G03F7/20C07C69/708C07C59/31G03F7/004
    • C07C69/712C07C59/70C07C59/72C07C2601/14C07C2603/74G03F7/0392
    • A compound of the present invention is a compound represented by a general formula (A-1) [wherein, R′ represents a hydrogen atom or an acid-dissociable, dissolution-inhibiting group, provided that at least one R′ group is an acid-dissociable, dissolution-inhibiting group, R11 to R17 each represent an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each represent an integer of 1 or greater, and k and q each represent an integer of 0 or greater, provided that g+j+k+q is not greater than 5; a represents an integer from 1 to 3; b represents an integer of 1 or greater, and l and m each represent an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represent an integer of 0 or greater, provided that c+n+o is not greater than 4; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
    • 本发明化合物是由通式(A-1)表示的化合物[其中,R'表示氢原子或酸解离的溶解抑制基团,条件是至少一个R'基团为酸 可溶解抑制基团,R 11至R 17各自表示1-10个碳原子的烷基或芳族烃基,其可以包括结构内的杂原子; g和j分别表示1以上的整数,k和q各自表示0以上的整数,条件是g + j + k + q不大于5; a表示1〜3的整数, b表示1或更大的整数,并且l和m各自表示0或更大的整数,条件是b + 1 + m不大于4; c表示1或更大的整数,n和o各自表示0或更大的整数,条件是c + n + o不大于4; A表示由下述通式(Ia)表示的基团,由下述通式(Ib)表示的基团或脂族环基]表示。