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91. 发明申请

US20060079026A1 Method of the film substrate, a method of the semiconductor device using the same, a method of the display device using the same, and a method of the electric device using the same 失效
标题翻译：薄膜基板的方法，使用该薄膜基板的半导体装置的方法，使用该方法的显示装置的方法以及使用该方法的电气装置的方法
公开(公告)号：US20060079026A1
公开(公告)日：2006-04-13
申请号：US10960168
申请日：2004-10-07
申请人： Tsutomu Matsuhira , Hideaki Adachi , Keiichiro Hayashi , Tadahiro Nishigawa , Nobukazu Koizumi
发明人： Tsutomu Matsuhira , Hideaki Adachi , Keiichiro Hayashi , Tadahiro Nishigawa , Nobukazu Koizumi
IPC分类号： H01L21/50 , H01L21/48 , H01L21/44
CPC分类号： H05K3/0011 , H01L21/4846 , H01L23/4985 , H01L24/81 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81801 , H01L2224/81805 , H01L2224/81825 , H01L2224/83102 , H01L2224/92125 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H05K1/0393 , H05K2203/1194 , H01L2924/00012 , H01L2924/00 , H01L2224/0401
摘要： A method of manufacture is provided in which position deviations during mounting are eliminated, and in which fine connections on the order of a 30 μm pitch can be stabilized. A low cost device can thus be realized by cost reductions that accompany smaller ICs. Mounting is performed in a state where moisture in a polyimide film of a film substrate has been substantially dried, or mounting is performed after conditioning under a fixed environment. Further, patterning of the film substrate is performed after similar drying processing or conditioning.
摘要翻译：提供了一种制造方法，其中消除了安装期间的位置偏差，并且可以稳定30μm级间距的精细连接。因此，可以通过伴随较小IC的成本降低来实现低成本设备。在膜基材的聚酰亚胺膜中的水分已经基本干燥的状态下进行安装，或者在固定环境下进行调理后进行安装。此外，在类似的干燥处理或调理之后进行膜基材的图案化。

92. 发明授权

US06594120B2 Magnetoresistive element and magnetic memory element and magnetic head using the same 有权
公开(公告)号：US06594120B2
公开(公告)日：2003-07-15
申请号：US09864564
申请日：2001-05-23
申请人： Akihiro Odagawa , Hideaki Adachi , Masayoshi Hiramoto , Nozomu Matukawa , Hiroshi Sakakima
发明人： Akihiro Odagawa , Hideaki Adachi , Masayoshi Hiramoto , Nozomu Matukawa , Hiroshi Sakakima
IPC分类号： G11B539
CPC分类号： H01L27/222 , B82Y10/00 , H01L43/10 , Y10S428/90 , Y10T428/1107
摘要： The present invention provides a magnetoresistive element in which discontinuity at a barrier layer interface is provided by utilizing a layered-perovskite oxide, and a device in which the foregoing magnetoresistive element is used. The element of the present invention includes a layered-perovskite oxide having a composition expressed by a formula L2(A1−zRz)2An−1MnO3n+3+x and including a (L-O)2 layer in its crystalline structure, and a pair of ferromagnetic bodies formed in contact with the layer perovskite oxide so as to sandwich the oxide. In response to bias application via the (L-O)2 layer, a magnetoresistive tunnel effect appears. In the foregoing formula, A represents at least one alkaline earth element selected from the group consisting of Ca, Sr, and Ba, L represents at least one element selected from the group consisting of Bi, Tl, and Pb, M represents at least one element selected from the group consisting of Ti, V, Cu, Ru, Ni, Mn, Co, Fe, and Cr, R represents a rare earth element, n is 1, 2, or 3, and x and z are numerical values satisfying −1≦x≦1, and 0≦z

93. 发明授权

US06555889B2 Magnetoresistive device and magnetic component 失效
标题翻译：磁阻元件和磁性元件
公开(公告)号：US06555889B2
公开(公告)日：2003-04-29
申请号：US10038083
申请日：2002-01-03
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima , Hideaki Adachi , Akihiro Odagawa
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima , Hideaki Adachi , Akihiro Odagawa
IPC分类号： H01L4300
CPC分类号： B82Y25/00 , H01F10/3254 , H01L43/12 , Y10T428/26
摘要： A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.
摘要翻译：一种磁电阻器件，包括高电阻率层（13），第一磁性层（12）和第二磁性层（14），第一磁性层（12）和第二磁性层（14）所述高电阻率层（13），其中所述高电阻率层（13）是用于在所述第一磁性层（12）和所述第二磁性层（14）之间穿过隧道电子的势垒，并且包含至少一个选择的元素LONC 来自氧，氮和碳; 选自第一磁性层（12）和第二磁性层（14）的至少一层A含有至少一种选自Fe，Ni和Co的金属元素M和与金属元素M不同的元素RCP; 并且元件RCP在能量方面比金属元件M更容易地与元件LONC组合。因此，可以获得具有低结电阻和高MR的新型磁阻器件。

94. 发明授权

US06528326B1 Magnetoresistive device and method for producing the same, and magnetic component 失效
公开(公告)号：US06528326B1
公开(公告)日：2003-03-04
申请号：US09744513
申请日：2001-01-24
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima , Hideaki Adachi , Akihiro Odagawa
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Hiroshi Sakakima , Hideaki Adachi , Akihiro Odagawa
IPC分类号： H01L2100
CPC分类号： B82Y25/00 , H01F10/3254 , H01L43/12 , Y10T428/26
摘要： A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.

95. 发明授权

US5451904A Amplifying circuit in which variable impedance circuit is used in negative feedback circuit 失效
标题翻译：可变阻抗电路用于负反馈电路的放大电路
公开(公告)号：US5451904A
公开(公告)日：1995-09-19
申请号：US218510
申请日：1994-03-25
申请人： Yukihiro Terada , Kyozo Makime , Hideaki Adachi
发明人： Yukihiro Terada , Kyozo Makime , Hideaki Adachi
IPC分类号： H03F1/08 , H03G5/10 , H03G5/22 , H03G3/30
CPC分类号： H03F1/083 , H03G5/10 , H03G5/22
摘要： An amplifying circuit includes: amplifying device for amplifying an input signal and outputting the amplified signal; feedback device for feeding the output signal from the amplifying device back to an input terminal of the amplifying device so that the output signal may have a predetermined frequency characteristic; and a variable impedance circuit which, included in the feedback device, operates on the basis of a current from a current source, and which has its impedance altered in accordance with the current.
摘要翻译：放大电路包括：放大装置，用于放大输入信号并输出放大的信号; 反馈装置，用于将来自放大装置的输出信号馈送到放大装置的输入端，使得输出信号可以具有预定的频率特性; 以及可变阻抗电路，其包括在反馈装置中，基于来自电流源的电流进行操作，并且其阻抗根据电流而改变。

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