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91. 发明申请

US20070070556A1 FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
标题翻译： FCC类三层AP2结构，用于CPP GMR EM改进
公开(公告)号：US20070070556A1
公开(公告)日：2007-03-29
申请号：US11234719
申请日：2005-09-23
申请人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
发明人： Kunliang Zhang , Dan Abels , Min Li , Chyu-Jiuh Torng , Chen-Jung Chien , Yu-Hsia Chen
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/16 , H01F10/3236 , H01F10/3259 , H01F10/3272 , H01F41/302
摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.
摘要翻译：公开了一种具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由Co＆lt; Z＆gt; Fe（100）表示的组成的FCC状三层 -Z）/ Fe（100-X）Ta x / Co Z（Fe）（100-Z）单层。自旋阀的MR比也增加，RA保持在可接受的水平。耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

92. 发明申请

US20060164765A1 Ta based bilayer seed for IrMn CPP spin valve 有权
标题翻译：用于IrMn CPP自旋阀的Ta基双层种子
公开(公告)号：US20060164765A1
公开(公告)日：2006-07-27
申请号：US11043624
申请日：2005-01-26
申请人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
发明人： Min Li , Kunliang Zhang , Chyu-Jiuh Torng , Yu-Hsia Chen
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39
摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.
摘要翻译：通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

93. 发明申请

US20060126231A1 Composite free layer for CIP GMR device 失效
标题翻译： CIP GMR器件的复合自由层
公开(公告)号：US20060126231A1
公开(公告)日：2006-06-15
申请号：US11010105
申请日：2004-12-10
申请人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Yun-Fei Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/10
摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.
摘要翻译：在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。还描述了用于制造该装置的方法。

94. 发明申请

US20060092578A1 AP1 layer for TMR device 有权
标题翻译： AP1层用于TMR设备
公开(公告)号：US20060092578A1
公开(公告)日：2006-05-04
申请号：US10977636
申请日：2004-10-29
申请人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01F41/303 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
摘要翻译：通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

95. 发明申请

US20060061916A1 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US20060061916A1
公开(公告)日：2006-03-23
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , C. C. Han
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

96. 发明申请

US20050275975A1 Novel hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的新型硬偏置设计
公开(公告)号：US20050275975A1
公开(公告)日：2005-12-15
申请号：US10868716
申请日：2004-06-15
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

97. 发明授权

US06416677B1 Narrow track stitched GMR head 失效
标题翻译：窄轨缝合GMR头
公开(公告)号：US06416677B1
公开(公告)日：2002-07-09
申请号：US09585785
申请日：2000-06-05
申请人： Hsiang-Yi Wei , Yi-Ting Yao , Eiki Narumi , Chyu-Jiuh Torng , Cherng-Chyi Han
发明人： Hsiang-Yi Wei , Yi-Ting Yao , Eiki Narumi , Chyu-Jiuh Torng , Cherng-Chyi Han
IPC分类号： B44C122
CPC分类号： G11B5/37
摘要： As the read capabilities of magnetic disk systems improve due to advanced GMR heads, it becomes necessary to correspondingly reduce the area of recorded data. This requires a narrowing of the stitched sub-pole at the write gap. This has proved difficult for pole widths less than about 0.4 microns because of problems in filling the mold. In the present invention this is overcome by introducing a layer of PMGI (polydimethylglutarimide) between the planarized positive photoresist layer that comprises the mold and the non-magnetic write gap layer on which the mold rests. This greatly facilitates formation of a high aspect ratio hole with a clean flat bottom and essentially vertical sides as well as the subsequent removal of the photoresist after said hole has been filled through electroplating to form a stitched sub-pole.
摘要翻译：由于高级GMR磁头的磁盘系统的读取能力得到改善，所以有必要相应地减少记录数据的面积。这需要在写入间隙处的缝合子极的变窄。由于填充模具的问题，对于小于约0.4微米的极宽度来说，这已被证明是困难的。在本发明中，通过在包括模具的平坦化正性光致抗蚀剂层和模具所在的非磁性写入间隙层之间引入一层PMGI（聚二甲基戊二酰亚胺）来克服这一点。这大大有利于形成具有干净的平坦底部和基本上垂直的侧面的高纵横比孔，以及随后在通过电镀填充所述孔以形成缝合的子极之后去除光致抗蚀剂。

98. 发明授权

US08436437B2 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08436437B2
公开(公告)日：2013-05-07
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层埃厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

99. 发明授权

US08289661B2 CPP structure with enhanced GMR ratio 有权
标题翻译： CPP结构具有增强的GMR比
公开(公告)号：US08289661B2
公开(公告)日：2012-10-16
申请号：US13065975
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

100. 发明授权

US08138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

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