专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06416677B1 Narrow track stitched GMR head 失效
标题翻译：窄轨缝合GMR头
公开(公告)号：US06416677B1
公开(公告)日：2002-07-09
申请号：US09585785
申请日：2000-06-05
申请人： Hsiang-Yi Wei , Yi-Ting Yao , Eiki Narumi , Chyu-Jiuh Torng , Cherng-Chyi Han
发明人： Hsiang-Yi Wei , Yi-Ting Yao , Eiki Narumi , Chyu-Jiuh Torng , Cherng-Chyi Han
IPC分类号： B44C122
CPC分类号： G11B5/37
摘要： As the read capabilities of magnetic disk systems improve due to advanced GMR heads, it becomes necessary to correspondingly reduce the area of recorded data. This requires a narrowing of the stitched sub-pole at the write gap. This has proved difficult for pole widths less than about 0.4 microns because of problems in filling the mold. In the present invention this is overcome by introducing a layer of PMGI (polydimethylglutarimide) between the planarized positive photoresist layer that comprises the mold and the non-magnetic write gap layer on which the mold rests. This greatly facilitates formation of a high aspect ratio hole with a clean flat bottom and essentially vertical sides as well as the subsequent removal of the photoresist after said hole has been filled through electroplating to form a stitched sub-pole.
摘要翻译：由于高级GMR磁头的磁盘系统的读取能力得到改善，所以有必要相应地减少记录数据的面积。这需要在写入间隙处的缝合子极的变窄。由于填充模具的问题，对于小于约0.4微米的极宽度来说，这已被证明是困难的。在本发明中，通过在包括模具的平坦化正性光致抗蚀剂层和模具所在的非磁性写入间隙层之间引入一层PMGI（聚二甲基戊二酰亚胺）来克服这一点。这大大有利于形成具有干净的平坦底部和基本上垂直的侧面的高纵横比孔，以及随后在通过电镀填充所述孔以形成缝合的子极之后去除光致抗蚀剂。

2. 发明授权

US07529067B2 Exchange bias structure for abutted junction GMR sensor 失效
标题翻译：对接结GMR传感器的交换偏置结构
公开(公告)号：US07529067B2
公开(公告)日：2009-05-05
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.
摘要翻译：虽然已知交换偏压可用于邻接接头用于纵向稳定化，但是需要相对较大的力矩来有效地将传感器边缘压下。由于交换偏压对磁性层厚度的反向依赖性，现有技术难以实现大的交换偏压。通过引入通过与反铁磁层交换而将偏压层的磁矩从上下两端钉住而将偏置层的磁矩大致加倍的结构已经解决了这个问题。另外，由于反铁磁层直接与自由层接触，所以它直接作用以帮助稳定传感器边缘，这是相对于已经使用的传统静磁钉扎的优点。

3. 发明授权

US06345435B1 Method to make laminated yoke for high data rate giant magneto-resistive head 失效
标题翻译：用于高数据速率巨磁阻头的叠片磁轭的方法
公开(公告)号：US06345435B1
公开(公告)日：2002-02-12
申请号：US09443448
申请日：1999-11-22
申请人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
发明人： Cherng-Chyi Han , Chyu-Jiuh Torng , Rodney Lee , Kochan Ju
IPC分类号： G11B542
CPC分类号： G11B5/59683 , G11B5/4813 , G11B5/5521 , Y10T29/49044 , Y10T29/49046
摘要： A method and design for the fabrication of a laminated yoke for a high data rate magnetic read-write transducer head. A full film layer of first ferromagnetic material is formed on a base using either plating or sputtering. The base comprises a read head, a ferromagnetic pole piece, and a ferromagnetic shield which also serves as a pole piece. A patterned layer of first non-magnetic dielectric is then formed on the full film layer of first ferromagnetic material. A patterned layer of photoresist is then formed on the full film layer of first ferromagnetic material and the patterned non-magnetic dielectric and used as a frame for a frame plating deposition of a patterned layer of second ferromagnetic material. The full film layer of first ferromagnetic material and the non-magnetic dielectric are then patterned, using the patterned layer of second ferromagnetic material as a mask and ion beam etching.
摘要翻译：一种用于制造用于高数据速率磁读写传感器头的层叠磁轭的方法和设计。使用电镀或溅射在基底上形成第一铁磁材料的完整膜层。基座包括读头，铁磁极片和铁磁屏蔽，其也用作极片。然后在第一铁磁材料的全部薄膜层上形成第一非磁性电介质的图案层。然后在第一铁磁材料和图案化非磁性电介质的完整膜层上形成图案化的光致抗蚀剂层，并用作用于第二铁磁材料的图案化层的框架电镀沉积的框架。然后使用第二铁磁材料的图案化层作为掩模和离子束蚀刻来对第一铁磁材料和非磁性介电体的全部膜层进行构图。

4. 发明申请

US20070080381A1 Robust protective layer for MTJ devices 审中-公开
标题翻译：坚固的MTJ设备保护层
公开(公告)号：US20070080381A1
公开(公告)日：2007-04-12
申请号：US11248965
申请日：2005-10-12
申请人： Chen-Jung Chien , Yu-Hsia Chen , Chyu-Jiuh Torng , Cherng-Chyi Han
发明人： Chen-Jung Chien , Yu-Hsia Chen , Chyu-Jiuh Torng , Cherng-Chyi Han
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/32 , H01L43/08
摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.
摘要翻译：当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。通过用双层层压板保护MTJ的侧壁已经克服了这个问题。第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

5. 发明授权

US07099125B2 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US07099125B2
公开(公告)日：2006-08-29
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
IPC分类号： G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

6. 发明授权

US07050273B2 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon 失效
标题翻译：底部旋转阀传感器，其上制造有铅覆盖（LOL）结构
公开(公告)号：US07050273B2
公开(公告)日：2006-05-23
申请号：US10922540
申请日：2004-08-20
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

7. 发明授权

US07016165B2 Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication 失效
标题翻译：基极GMR读头具有改进的硬偏置层及其制造方法
公开(公告)号：US07016165B2
公开(公告)日：2006-03-21
申请号：US09822491
申请日：2001-04-02
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
摘要翻译：用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件在根据该方法制造的接合区域中具有显着改善的磁性能。

8. 发明授权

US06879474B2 Junction stability and yield for spin valve heads 失效
标题翻译：自旋阀头的结点稳定性和产量
公开(公告)号：US06879474B2
公开(公告)日：2005-04-12
申请号：US10718878
申请日：2003-11-21
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

9. 发明授权

US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor 失效
标题翻译：在底部自旋阀GMR读取传感器上制造引线覆盖层（LOL）的方法
公开(公告)号：US06785954B2
公开(公告)日：2004-09-07
申请号：US10124004
申请日：2002-04-17
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

10. 发明申请

US20060164766A1 Exchange bias structure for abutted junction GMR sensor 失效
公开(公告)号：US20060164766A1
公开(公告)日：2006-07-27
申请号：US11375323
申请日：2006-03-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng-Chyi Han , Mao-Min Chen
IPC分类号： G11B5/33 , B05D5/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式