会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 91. 发明授权
    • OBIC observation method and apparatus therefor
    • OBIC观察方法及其设备
    • US5334540A
    • 1994-08-02
    • US56908
    • 1993-05-05
    • Tatsuya Ishii
    • Tatsuya Ishii
    • G01R31/311H01L21/00
    • G01R31/311
    • In order to enable OBIC observation of a high density silicon semiconductor device provided on a semiconductor chip whose surface is mostly covered with a metal wire, i.e., for measurement of an OBIC current, the silicon semiconductor device is irradiated with a light beam from a rear surface side thereof. The wavelength of the light beam to be used has a light penetration depth, i.e., a depth for allowing light absorption of silicon (depth allowing penetration of light required for generating a photovoltaic effect) that is larger than the thickness of the silicon chip, and is shorter than the absorption edge of silicon. For example, a YAG laser beam of 1064 nm in wavelength or an InGaAs laser beam of 980 nm in wavelength is used as the light beam.
    • 为了使OBIC能够观察到设置在半导体芯片上的高密度硅半导体器件,该半导体芯片的表面大部分被金属线覆盖,即用于测量OBIC电流,硅半导体器件被来自后面的光束 其表面侧。 要使用的光束的波长具有光穿透深度,即,允许硅的光吸收的深度(允许穿透产生光伏效应所需的光的深度)的深度大于硅芯片的厚度,以及 比硅的吸收边短。 例如,使用波长为1064nm的YAG激光束或980nm波长的InGaAs激光束作为光束。