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    • 92. 发明授权
    • Liquid chromatograph with fraction collector
    • 带馏分收集器的液相色谱仪
    • US06280627B1
    • 2001-08-28
    • US09473254
    • 1999-12-27
    • Masato Kobayashi
    • Masato Kobayashi
    • B01D1508
    • G01N30/82G01N30/7233G01N2030/383G01N30/84G01N30/10
    • A fraction collecting device for a liquid chromatograph has a splitter disposed downstream to a chromatographic column and serving to split the flow from the column into two flow routes individually connected to a mass analyzer serving as a detector and a fraction collector. A plurality of pipes each having a different flow resistance and being connected in parallel with respect to one other are inserted in either of these two flow routes. A control unit serves to select one of these pipes according to inputted parameters indicating the conditions of liquid chromatography to be carried out and controls valves so as to connect this selected one of the pipes to the column through the splitter.
    • 用于液相色谱仪的级分收集装置具有分配器,其设置在色谱柱的下游,用于将来自色谱柱的流分离成两个流路,分别连接到用作检测器和馏分收集器的质量分析器。 在这两条流路中的任一条中插入有各自具有不同流阻的并且相互并联连接的多个管。 控制单元用于根据输入的参数来选择这些管道中的一个,所述参数指示要执行的液相色谱的条件,并且控制阀,以通过分离器将所选择的一个管道连接到列。
    • 98. 发明授权
    • Low temperature system and method for CVD copper removal
    • 低温系统和CVD铜去除方法
    • US5897379A
    • 1999-04-27
    • US995112
    • 1997-12-19
    • Bruce Dale UlrichTue NguyenMasato Kobayashi
    • Bruce Dale UlrichTue NguyenMasato Kobayashi
    • C23F1/02C23F1/18H01L21/304H01L21/306H01L21/3205H01L21/3213B44C1/22H01L21/308
    • H01L21/32134C23F1/18H01L21/02063H01L21/02087H01L21/3212H01L21/6708
    • A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.
    • 提供了使用稀硝酸和边缘珠除去工具从半导体晶片的周边去除铜的方法。 在一个实施例中,在施加酸之前,晶片的敏感区域被光致抗蚀剂覆盖,并且晶片外围的光致抗蚀剂被清除。 在另一个实施例中,当施加铜蚀刻剂时,晶片的敏感区域被水喷雾保护。 在第三实施例中,在对沉积的铜层进行化学机械抛光(CMP)之前,施加硝酸以清除铜的晶片周边。 铜的过剩厚度保护铜互连结构不与铜蚀刻剂反应。 所有这些方法允许铜在没有形成铜氧化物的足够低的温度下被去除。 还提供了根据上述方法清洁铜的半导体晶片和用于低温铜去除的系统。
    • 100. 发明授权
    • Method of using water vapor to increase the conductivity of cooper
desposited with cu(hfac)TMVS
    • 使用水蒸气增加铜(hfac)TMVS沉积铜的电导率的方法
    • US5744192A
    • 1998-04-28
    • US745562
    • 1996-11-08
    • Tue NguyenYoshihide SenzakiMasato KobayashiLawrence J. CharneskiSheng Teng Hsu
    • Tue NguyenYoshihide SenzakiMasato KobayashiLawrence J. CharneskiSheng Teng Hsu
    • C01G3/00C23C16/18C23C16/448C23C16/52H01L21/28H01L21/285H01L21/60B05D5/12C23C16/04
    • C23C16/4481C23C16/18H01L2924/0002
    • A method of blending water vapor with volatile Cu(hfac)TMVS (copper hexafluoroacetylacetonate trimethylvinylsilane) is provided which improves the deposition rate of Cu, without degrading the resistivity of the Cu deposited upon an integrated circuit surface. The method of the present invention uses a relatively small amount of water vapor, approximately 0.3 to 3% of the total pressure of the system in which chemical vapor deposition (CVD) Cu is applied. The method specifies the flow rates of the liquid precursor, carrier gas, and liquid water. The method also specifies the pressures of the vaporized precursor, vaporized precursor blend including carrier gas and water vapor. In addition, the temperatures of the vaporizers, chamber walls, and IC surfaces are disclosed. A Cu precursor blend is also provided comprising vaporized Cu(hfac)TMVS and water vapor. The ratio of water vapor pressure to vaporized precursor is approximately 0.5 to 5%. Further, an IC surface covered with Cu applied with a Cu precursor blend including vaporized Cu(hfac)TMVS and water vapor, with the above mentioned ratio of water vapor pressure to volatile Cu(hfac)TMVS pressure, is provided.
    • 提供了将水蒸汽与挥发性Cu(hfac)TMVS(六氟乙酰丙酮酸铜三甲基乙烯基硅烷)共混的方法,其改善了Cu的沉积速率,而不降低沉积在集成电路表面上的Cu的电阻率。 本发明的方法使用相对少量的水蒸气,其中施加化学气相沉积(CVD)Cu的系统的总压力的大约0.3至3%。 该方法规定了液体前体,载气和液态水的流量。 该方法还规定了蒸发的前体,蒸发的前体共混物包括载气和水蒸气的压力。 此外,公开了蒸发器,室壁和IC表面的温度。 还提供了包含蒸发的Cu(hfac)TMVS和水蒸气的Cu前体共混物。 水蒸气压与汽化前体的比率约为0.5〜5%。 此外,提供了用Cu涂覆Cu包含蒸发的Cu(hfac)TMVS和水蒸气的Cu前体共混物的IC表面,具有上述的水蒸气压与挥发性Cu(hfac)TMVS压力的比率。