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91. 发明授权

US08456394B2 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 失效
公开(公告)号：US08456394B2
公开(公告)日：2013-06-04
申请号：US13544287
申请日：2012-07-09
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/32
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

92. 发明申请

US20130043499A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130043499A1
公开(公告)日：2013-02-21
申请号：US13572178
申请日：2012-08-10
申请人： Masataka Ohta , Takeshi Kamikawa
发明人： Masataka Ohta , Takeshi Kamikawa
IPC分类号： H01L33/60
CPC分类号： H01L33/483 , H01L33/507 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).
摘要翻译：一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1）在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。

93. 发明申请

US20130038938A1 OPTICAL COMPONENT AND OPTICAL MODULE 审中-公开
标题翻译：光学元件和光学模块
公开(公告)号：US20130038938A1
公开(公告)日：2013-02-14
申请号：US13548756
申请日：2012-07-13
申请人： Toshiyuki Kawakami , Takeshi Kamikawa
发明人： Toshiyuki Kawakami , Takeshi Kamikawa
IPC分类号： G02B5/28 , H01S5/02 , G02B1/10
CPC分类号： G02B27/0006 , G02B1/10 , G02B1/105 , H01S5/005 , H01S5/02296 , H01S5/028 , H01S5/0282
摘要： An optical component emits or transmits laser light of a wavelength of 460 nm or less, and a first coating formed from a dielectric film is applied upon at least a part of the surface thereof, and a second coating B formed from a dielectric film containing a noble metal or platinum group element is applied upon the first coating.
摘要翻译：光学部件发射或透射波长为460nm以下的激光，并且在其表面的至少一部分上施加由电介质膜形成的第一涂层，并且将第二涂层B由包含贵金属或铂族元素在第一次涂覆时施加。

94. 发明授权

US08367441B2 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权
标题翻译：氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件
公开(公告)号：US08367441B2
公开(公告)日：2013-02-05
申请号：US13200357
申请日：2011-09-23
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L21/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译：本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

95. 发明授权

US08319235B2 Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件和氮化物半导体发光器件的制造方法
公开(公告)号：US08319235B2
公开(公告)日：2012-11-27
申请号：US11785981
申请日：2007-04-23
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/028 , H01S5/221 , H01S5/2231
摘要： A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.
摘要翻译：一种氮化物半导体发光器件，包括依次形成在发光部分上的发光部分的涂覆膜和反射控制膜，其中发光部分由氮化物半导体形成，所述涂膜由氮氧化铝膜或氮化铝膜，反射率控制膜由氧化膜形成，以及制造氮化物半导体发光器件的方法。

96. 发明授权

US07968898B2 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权
标题翻译：氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件
公开(公告)号：US07968898B2
公开(公告)日：2011-06-28
申请号：US11713761
申请日：2007-03-05
申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
摘要翻译：提供了一种氮化物半导体发光器件，其包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜，以及制造氮化物半导体发光器件的方法。还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。

97. 发明申请

US20110042646A1 Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device 审中-公开
标题翻译：氮化物半导体晶片，氮化物半导体芯片，其制造方法和半导体器件
公开(公告)号：US20110042646A1
公开(公告)日：2011-02-24
申请号：US12805848
申请日：2010-08-20
申请人： Masataka Ohta , Takeshi Kamikawa
发明人： Masataka Ohta , Takeshi Kamikawa
IPC分类号： H01L29/12 , H01L29/20 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/12 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152 , H01S5/0201 , H01S5/0202 , H01S5/0217 , H01S5/02212 , H01S5/028 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S5/3407 , H01S2304/04 , H01L2924/00014
摘要： A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al.
摘要翻译：氮化物半导体芯片可以提高发光效率。氮化物半导体激光器芯片（氮化物半导体芯片）具有主要生长面的GaN衬底和形成在GaN衬底的主生长平面上并且具有包括阱层的量子阱结构的有源层和阻挡层。主生长面是相对于m面在a轴方向上具有偏角的平面。阻挡层由AlGaN构成，AlGaN是含有Al的氮化物半导体。

98. 发明授权

US07889161B2 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
标题翻译：发光装置，用于驱动发光装置的方法以及包括该发光装置的显示装置
公开(公告)号：US07889161B2
公开(公告)日：2011-02-15
申请号：US11644668
申请日：2006-12-22
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/32
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

99. 发明申请

US20110007770A1 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20110007770A1
公开(公告)日：2011-01-13
申请号：US12923334
申请日：2010-09-15
申请人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
发明人： Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
IPC分类号： H01S5/323
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0282 , H01S5/2231 , H01S5/34333
摘要： An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
摘要翻译：在具有氮化物III-V族化合物半导体层的氮化物半导体激光棒的光谐振器的面上放置六方晶的粘附层，并且在该粘合层上铺设小面涂层。以这种方式，获得其中将小面涂层铺设在粘合层上的结构。

100. 发明授权

US07858992B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07858992B2
公开(公告)日：2010-12-28
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

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