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    • 91. 发明申请
    • METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS
    • 用流平面设计沉积均匀硅膜的方法和装置
    • US20080302303A1
    • 2008-12-11
    • US11759599
    • 2007-06-07
    • Soo Young ChoiTae Kyung WonJohn M. White
    • Soo Young ChoiTae Kyung WonJohn M. White
    • C23C16/00B05B1/14
    • C23C16/24C23C16/45565C23C16/5096H01J37/32449
    • Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
    • 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中,该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板,并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈,位于角部的第一多个扼流圈,以及通过气体分配板形成的第二多个扼流圈,沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中,所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。
    • 94. 发明申请
    • CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER
    • 污染减少衬板用于电感耦合室
    • US20080118663A1
    • 2008-05-22
    • US11866490
    • 2007-10-03
    • Soo Young ChoiQunhua Wang
    • Soo Young ChoiQunhua Wang
    • C23C16/00
    • C23C16/4404
    • A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate.
    • 提供了一种通过等离子体沉积膜的方法和装置,提高了化学气相沉积工艺。 在一个实施例中,一种设备包括处理室,其具有设置在室中的线圈并且靠近室壁布置。 衬套设置在线圈上方并被材料涂层保护,其中材料涂层具有类似于衬垫的膜性质。 在一个实施例中,衬垫是含硅材料,并且被材料的涂层保护。 因此,在材料的一些保护涂层被无意中溅射的情况下,如果沉积在衬底上并且沉积在衬底上的沉积膜,则溅射材料不是污染源。
    • 95. 发明申请
    • Method and apparatus for improving uniformity of large-area substrates
    • 改善大面积基板均匀性的方法和装置
    • US20070221128A1
    • 2007-09-27
    • US11389603
    • 2006-03-23
    • Soo Young ChoiJohn M. White
    • Soo Young ChoiJohn M. White
    • C23C16/00
    • C23C16/45565C23C16/345C23C16/5096C23C16/52
    • Embodiments of the present invention generally provide methods and apparatus for improving the uniformity of a film deposited on a large-area substrate, particularly for films deposited in a PECVD system. In one embodiment, a plasma-processing chamber is configured to be asymmetrical relative to a substrate in order to compensate for plasma density non-uniformities in the chamber caused by unwanted magnetic fields. In another embodiment, a plasma-processing chamber is adapted to create a neutral current bypass path that reduces electric current flow through a magnetic field-generating feature in the chamber. In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber. The chamber is made electrically symmetric during processing by creating a neutral current bypass path, wherein the neutral current bypass path substantially reduces neutral current flow through a magnetic field-generating feature in the chamber.
    • 本发明的实施例通常提供了用于改善沉积在大面积基板上的膜的均匀性的方法和装置,特别是用于沉积在PECVD系统中的薄膜。 在一个实施例中,等离子体处理室被配置为相对于衬底是不对称的,以便补偿由不想要的磁场引起的腔室中的等离子体密度不均匀性。 在另一个实施例中,等离子体处理室适于产生中性电流旁路路径,其减小通过腔室中的磁场产生特征的电流。 在另一个实施例中,提供了一种用于在等离子体处理室中的大面积衬底上沉积均匀膜的方法。 通过产生中性电流旁路路径,室在处理期间被电对称,其中中性线旁路通过基本上减少通过腔室中的磁场产生特征的中性点电流。
    • 98. 发明授权
    • Substrate support with gas introduction openings
    • 衬底支撑与气体导入孔
    • US08853098B2
    • 2014-10-07
    • US13401755
    • 2012-02-21
    • Sam H. KimJohn M. WhiteSoo Young ChoiCarl A. SorensenRobin L. TinerBeom Soo Park
    • Sam H. KimJohn M. WhiteSoo Young ChoiCarl A. SorensenRobin L. TinerBeom Soo Park
    • H01L21/00H01L21/44H01L21/31H01L21/469H01L21/687H01L21/683
    • H01L21/68742H01L21/6831
    • Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
    • 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时,由于可能存在于基板和基板支撑件之间的气体袋,基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此,从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间,静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体,可以克服静电力,使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。