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    • 96. 发明授权
    • EUV light source
    • EUV光源
    • US07411203B2
    • 2008-08-12
    • US11647016
    • 2006-12-27
    • Igor V. FomenkovAlexander I. Ershov
    • Igor V. FomenkovAlexander I. Ershov
    • H01J49/00
    • G03F7/70033B82Y10/00G03F7/70175G03F7/70916G21K1/062G21K2201/061G21K2201/065G21K2201/067H05G2/003H05G2/005H05G2/006H05G2/008
    • An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a ibeus defining a desired plasma initiation site, comprising; a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis genemily perpendicular to the target stream track from a desired stream truck intersecting the desired plasma initiation site.
    • 公开了一种用于EUV光产生的装置和方法,其可以包括激光产生的等离子体(“LPP”)极紫外(“EUV”)光源控制系统,其包括适于递送移动等离子体引发靶的目标传送系统和EUV光收集 光学元件具有限定期望的等离子体起始位置的ibeus,包括: 目标跟踪和反馈系统,包括:至少一个成像装置,其提供目标流轨迹的图像作为输出,其中所述目标流轨迹由所述摄像机的成像速度导致太慢以不能成像形成所述目标的各个等离子体形成目标 流成像为目标流轨道; 流轨迹误差检测器,从与期望的等离子体起始位置相交的期望的流动车辆,在垂直于目标流轨迹的至少一个轴中至少一个轴上检测目标流轨迹的位置的误差。
    • 98. 发明授权
    • EUV light source collector lifetime improvements
    • EUV光源收集器寿命改善
    • US07365349B2
    • 2008-04-29
    • US11168190
    • 2005-06-27
    • William N. PartloAlexander I. ErshovIgor V. FomenkovOleh Khodykin
    • William N. PartloAlexander I. ErshovIgor V. FomenkovOleh Khodykin
    • H01J35/20
    • H05G2/003B82Y10/00G03F7/70925G21K1/062H05G2/005
    • An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.
    • 一种用于从等离子体产生的EUV光源收集器光学元件清洗等离子体源材料化合物的装置和方法,其可以包括使等离子体源材料化合物与氢反应以从等离子体源中包含的等离子体源材料形成等离子体源材料的氢化物 收集器光学元件上的材料化合物。 该方法还可以包括通过将氢引入到包含收集器光学元件的等离子体形成室中来引发反应,并且还可以包括例如通过清洗等离子体作用和/或等离子体源材料溅射或其它方法从收集器光学元件中去除氢化物 可能被确定为有效。 延长等离子体产生的EUV光源集电器涂层的使用寿命的装置和方法可包括通过将涂层材料沉积到涂层上来原位置换涂层的材料。
    • 99. 发明授权
    • LPP EUV light source
    • LPP EUV光源
    • US07317196B2
    • 2008-01-08
    • US10979919
    • 2004-11-01
    • William N. PartloDaniel J. W. BrownIgor V. FomenkovAlexander I. ErshovDavid W. Myers
    • William N. PartloDaniel J. W. BrownIgor V. FomenkovAlexander I. ErshovDavid W. Myers
    • H01J35/20
    • B82Y10/00G03F7/70033H05G2/003H05G2/008
    • An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
    • 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低的临界密度,从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收 等离子体照射脉冲从初始目标照射位置充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。