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91. 发明申请

US20090142879A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：US20090142879A1
公开(公告)日：2009-06-04
申请号：US12324220
申请日：2008-11-26
申请人： Fumito ISAKA , Sho Kato , Koji Dairiki
发明人： Fumito ISAKA , Sho Kato , Koji Dairiki
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

92. 发明申请

US20090102055A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090102055A1
公开(公告)日：2009-04-23
申请号：US11919635
申请日：2006-05-26
申请人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
发明人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
IPC分类号： H01L23/52
CPC分类号： H01L27/13 , G06K19/07749 , H01L21/6835 , H01L23/5227 , H01L23/552 , H01L23/576 , H01L23/585 , H01L27/105 , H01L27/11509 , H01L27/11526 , H01L27/11546 , H01L27/1203 , H01L27/124 , H01L27/1266 , H01L29/78618 , H01L2221/6835 , H01L2221/68368 , H01L2924/0002 , H01L2924/12044 , H01L2924/30105 , H01Q1/2208 , H01L2924/00
摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.
摘要翻译：本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。第二导电膜的第一端部和第二端部彼此不连接。

93. 发明授权

US07504317B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07504317B2
公开(公告)日：2009-03-17
申请号：US11600070
申请日：2006-11-16
申请人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
发明人： Tomoyuki Aoki , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/78 , H01L27/1214
摘要： It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.
摘要翻译：本发明的目的是提供一种高可靠性的半导体器件的制造方法。多个第一半导体集成电路，多个第二半导体集成电路，每个第二半导体集成电路被布置为与第一半导体集成电路之一相邻，多个第三半导体集成电路被布置为与第一半导体集成电路和第二半导体集成电路之一，以及多个第四半导体集成电路，每个第四半导体集成电路被布置为与第一半导体集成电路之一相邻，第二半导体集成电路之一和第二半导体集成电路之一第三半导体集成电路形成在第一基板上。第一半导体集成电路被转移到第二衬底。形成第一保护层以覆盖第一半导体集成电路和第一半导体集成电路的周边中的第二基板的表面。第二基板和第一保护层被分割成使得多个第一半导体集成电路被分成单独的部分，并且第二基板的一部分保留在第一半导体集成电路的周围。因此，制造具有第一半导体集成电路的半导体器件。

94. 发明申请

US20070212875A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT 有权
标题翻译：制造薄膜集成电路的方法
公开(公告)号：US20070212875A1
公开(公告)日：2007-09-13
申请号：US11570854
申请日：2005-06-15
申请人： Takuya Tsurume , Koji Dairiki
发明人： Takuya Tsurume , Koji Dairiki
IPC分类号： H01L29/786
CPC分类号： H01L27/1266 , H01L27/1214 , H01L2221/68363 , H01L2221/68368
摘要： An object of the present invention is to prevent a thin film integrate circuit from peeling off during the process of transferring to a base material. By a manufacturing method of the present invention, a separation layer is formed selectively on a surface of a substrate; thus, a first region where the separation layer is provided and a second region where the separation layer is not provided are formed. A thin film integrated circuit is formed over the separation layer. Then, an opening portion for exposing the separation layer is formed, en etching agent is introduced into the opening portion to remove the separation layer. Thus, a space is generated in the region provided with the separation layer, whereas a space is not generated in the region without the separation layer. Therefore, the thin film integrated circuit can be prevented from peeling off even after the separation layer is removed, by providing the region where the space is not generated after that.
摘要翻译：本发明的目的是在转印到基材的过程中防止薄膜集成电路剥离。通过本发明的制造方法，在基板的表面上选择性地形成分离层，因此，形成了设置分离层的第一区域和不设置分离层的第二区域。在分离层上形成薄膜集成电路。然后，形成用于暴露分离层的开口部分，将蚀刻剂引入开口部分以除去分离层。因此，在设置有分离层的区域中产生空间，而在没有分离层的区域中不产生空间。因此，即使在分离层被去除之后，也可以防止薄膜集成电路剥离，通过在其之后提供不产生空间的区域。

95. 发明申请

US20070128747A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070128747A1
公开(公告)日：2007-06-07
申请号：US11602261
申请日：2006-11-21
申请人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
发明人： Tomoko Tamura , Tomoyuki Aoki , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1214
摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.
摘要翻译：第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。因此，可以获得第四基板和第五基板中的每一个的大分割裕度。

96. 发明申请

US20060055014A1 Wireless chip and manufacturing method of the same 失效
标题翻译：无线芯片和制造方法相同
公开(公告)号：US20060055014A1
公开(公告)日：2006-03-16
申请号：US11213997
申请日：2005-08-30
申请人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
发明人： Takuya Tsurume , Koji Dairiki , Naoto Kusumoto
IPC分类号： H01L23/02 , H01L23/24
CPC分类号： H01L21/6835 , H01L23/20 , H01L23/22 , H01L23/58 , H01L24/83 , H01L2221/6834 , H01L2221/68363 , H01L2221/68368 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01019 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/30105 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a new type wireless chip that can be used without being fixed on a product. Specifically, a wireless chip can have a new function by a sealing step. One feature of a wireless chip according to the present invention is to have a structure in which an integrated circuit is sealed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the wireless chip can have a new function.
摘要翻译：本发明提供了一种新型无线芯片，可以在不固定在产品上的情况下使用。具体地说，无线芯片可以通过密封步骤具有新的功能。根据本发明的无线芯片的一个特征是具有其中集成电路被膜密封的结构。特别地，密封集成电路的膜具有中空结构; 因此无线芯片可以具有新功能。

97. 发明申请

US20050214984A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050214984A1
公开(公告)日：2005-09-29
申请号：US11079262
申请日：2005-03-15
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/46 , H01L21/58 , H01L21/68 , H01L21/77 , H01L21/84 , H01L27/12
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板上剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

98. 发明授权

US08530335B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08530335B2
公开(公告)日：2013-09-10
申请号：US13071629
申请日：2011-03-25
申请人： Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen , Koji Dairiki , Takuya Tsurume
发明人： Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen , Koji Dairiki , Takuya Tsurume
IPC分类号： H01L21/30 , H01L21/46 , H01L21/302 , H01L21/461 , H01L23/58
CPC分类号： H01L21/02381 , H01L21/84 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68359 , H01L2221/68368 , H01L2224/81001
摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
摘要翻译：形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。半导体器件通过层压等密封剥离的薄膜集成电路而形成。

99. 发明授权

US08343858B2 Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08343858B2
公开(公告)日：2013-01-01
申请号：US13035037
申请日：2011-02-25
申请人： Tetsuhiro Tanaka , Tomokazu Yokoi , Koji Dairiki
发明人： Tetsuhiro Tanaka , Tomokazu Yokoi , Koji Dairiki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L31/1136 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/14692 , H01L31/03685 , Y02E10/545 , Y02E10/548
摘要： A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.
摘要翻译：提供了一种制造具有高结晶度的微晶半导体膜的方法。提供了一种具有良好的电特性，高生产率的半导体装置的制造方法。在基板上形成第一微晶半导体膜之后，进行使第一微晶半导体膜的表面变平的处理。然后，进行用于除去平坦化的第一微晶半导体膜的表面侧的非晶半导体区域的处理，使得形成具有高结晶度和平坦度的第二微晶半导体膜。之后，在第二微晶半导体膜上形成第三微晶半导体膜。

100. 发明授权

US07915058B2 Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same 有权
标题翻译：具有图案的基板及其制造方法，以及半导体装置及其制造方法
公开(公告)号：US07915058B2
公开(公告)日：2011-03-29
申请号：US11334474
申请日：2006-01-19
申请人： Tomoyuki Aoki , Koji Dairiki
发明人： Tomoyuki Aoki , Koji Dairiki
IPC分类号： H01L21/00
CPC分类号： H01L23/49894 , C03C17/3649 , G02F1/13439 , H01L21/4867 , H01L21/6835 , H01L27/3244 , H01L27/3281 , H01L27/3297 , H01L51/0021 , H01L51/524 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.
摘要翻译：本发明提供了一种制造具有能够控制相邻膜图案之间的距离的图案的基板的制造方法，并且还提供了一种制造基板的方法，特别是具有窄的宽度和厚度的图案控制胶片图案之间的宽度。本发明提供一种制造具有导电膜的基板的方法，该导电膜用作具有小的电感变化的天线，并且具有大的电动势，并且提供了一种以高产率制造半导体器件的方法。在其中组合硅和氧并且非活性基团与硅在基底，绝缘膜或导电膜上组合的膜之后，通过其上的印刷方法印刷组合物，并且被烘烤以形成膜模式。

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