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91. 发明授权

US06479304B1 Iridium composite barrier structure and method for same 有权
标题翻译：铱复合阻挡结构及方法相同
公开(公告)号：US06479304B1
公开(公告)日：2002-11-12
申请号：US09717993
申请日：2000-11-21
申请人： Fengyan Zhang , Jer-shen Maa , Sheng Teng Hsu
发明人： Fengyan Zhang , Jer-shen Maa , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L28/75 , H01L21/28291 , H01L28/55 , H01L29/516
摘要： An Ir combination film has been provided that is useful in forming an electrode of a ferroelectric capacitor. The combination film includes tantalum and oxygen, as well as iridium. The Ir combination film effectively prevents oxygen diffusion, and is resistant to high temperature annealing in oxygen environments. When used with an underlying Ta or TaN layer, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. A method for forming an Ir composite film barrier layer and Ir composite film ferroelectric electrode are also provided.
摘要翻译：已经提供了可用于形成铁电电容器的电极的Ir组合膜。组合膜包括钽和氧，以及铱。 Ir组合膜有效防止氧气扩散，并且在氧气环境中耐高温退火。当与下面的Ta或TaN层一起使用时，所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。结果，不形成铱硅化物产物，这降低了电极界面的特性。也就是说，即使在氧气中，Ir组合膜在高温退火过程中仍保持导电性，不会剥离或形成小丘。还提供了形成Ir复合膜阻挡层和Ir复合膜铁电电极的方法。

92. 发明授权

US06457479B1 Method of metal oxide thin film cleaning 失效
标题翻译：金属氧化物薄膜清洗方法
公开(公告)号：US06457479B1
公开(公告)日：2002-10-01
申请号：US09965581
申请日：2001-09-26
申请人： Wei-Wei Zhuang , Fengyan Zhang , Sheng Teng Hsu , Tingkai Li
发明人： Wei-Wei Zhuang , Fengyan Zhang , Sheng Teng Hsu , Tingkai Li
IPC分类号： B08B600
CPC分类号： H01L21/02071 , B08B3/12 , Y10S134/902
摘要： A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200° C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.
摘要翻译：一种在硅晶片上清洗金属氧化物薄膜的方法，包括将晶片浸入有机溶剂中; 在氮气气氛中干燥晶片; 并且在约200℃的温度下，在部分真空下，在氧气氛中从晶片上剥离任何光致抗蚀剂。也可以通过浸渍在极性有机溶剂中并将晶片浸入溶剂中使其超声波清洗晶片。

93. 发明授权

US06420740B1 Lead germanate ferroelectric structure with multi-layered electrode 失效
标题翻译：具有多层电极的锗酸铁锂结构
公开(公告)号：US06420740B1
公开(公告)日：2002-07-16
申请号：US09317780
申请日：1999-05-24
申请人： Fengyan Zhang , Tingkai Li , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L28/56 , H01L21/31604 , H01L21/31691 , H01L28/75
摘要： The ferroelectric structure including a Pt/Ir layered electrode used in conjunction with a lead germanate (Pb5Ge3O11) thin film is provided. The electrode exhibits good adhesion to the substrate, and barrier properties resistant to oxygen and lead. Ferroelectric properties are improved, without detriment to the leakage current, by using a thin IrO2 layer formed in situ, during the MOCVD lead germanate (Pb5Ge3O11) thin film process. By using a Pt/Ir electrode, a relatively low MOCVD processing temperature is required to achieve c-axis oriented lead germanate (Pb5Ge3O11) thin film. The temperature range of MOCVD caxis oriented lead germanate (Pb5Ge3O11) thin film on top of Pt/Ir is 400-500° C. Further, a relatively large nucleation density is obtained, as compared to using single-layer iridium electrode. Therefore, the lead germanate (Pb5Ge3O11) thin film has a smooth surface, a homogeneous microstructure, and homogeneous ferroelectric properties. A method of forming the above-mentioned multi-layered electrode ferroelectric structure is also provided.
摘要翻译：提供了包括与锗酸铅（Pb5Ge3O11）薄膜结合使用的Pt / Ir层叠电极的铁电体结构。该电极对基材表现出良好的粘合性，并且对氧和铅具有阻挡性能。在MOCVD锗酸铅（Pb5Ge3O11）薄膜工艺中，通过使用在原位形成的薄的IrO 2层，铁电性能得到改善，而不损害漏电流。通过使用Pt / Ir电极，需要相对低的MOCVD处理温度来实现c轴取向的锗酸铅（Pb5Ge3O11）薄膜。 Pt / Ir顶部的MOCVD caxis取向铅酸铅（Pb5Ge3O11）薄膜的温度范围为400-500℃。与使用单层铱电极相比，获得了较大的成核密度。因此，锗酸铅（Pb5Ge3O11）薄膜表面光滑，微观组织均匀，铁电性能均匀。还提供了形成上述多层电极铁电体结构体的方法。

94. 发明授权

US06288420B1 Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier 有权
$Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier$
标题翻译：复合铱金属氧阻隔结构与难熔金属伴侣屏障
公开(公告)号：US06288420B1
公开(公告)日：2001-09-11
申请号：US09703192
申请日：2000-10-31
申请人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
发明人： Fengyan Zhang , Sheng Teng Hsu , Jer-shen Maa , Wei-Wei Zhuang
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
摘要翻译：已经提供了可用于形成铁电电容器的电极的Ir-M-O复合膜，其中M包括各种难熔金属。 Ir组合膜在氧气环境中耐高温退火。当与由相同种类的M过渡金属制成的底层阻挡层一起使用时，所得到的导电屏障还抑制Ir扩散到任何下面的Si衬底中。结果，不形成铱硅化物产物，这降低了电极界面的特性。也就是说，即使在氧气中，Ir组合膜在高温退火过程中仍保持导电性，不会剥离或形成小丘。 Ir-M-O导电电极/屏障结构可用于非易失性FeRAM器件，DRAM，电容器，热释电红外传感器，光学显示器，光开关，压电换能器和表面声波器件。还提供了形成Ir-M-O复合膜阻挡层和Ir-M-O复合膜铁电电极的方法。

95. 发明授权

US06281022B1 Multi-phase lead germanate film deposition method 有权
标题翻译：多相锗酸铅成膜法
公开(公告)号：US06281022B1
公开(公告)日：2001-08-28
申请号：US09704496
申请日：2000-11-01
申请人： Tingkai Li , Fengyan Zhang , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/56 , H01L21/31604 , H01L28/55
摘要： A MOCVD deposition process has been provided for the deposition of an improved PGO ferroelectric film. The inclusion of a second phase of Pb3GeO5, along with the first phase of Pb5Ge3O11, provides the film with some ferroelastic properties which direct correspond to improved ferroelectric characteristics. The inclusion of the second phase regulates to first phase crystal grain size and promotes the preferred c-axis orientation of the grains. The degree of second phase Pb3GeO5 is regulated by controlling the amount of lead in the precursor, and with additional lead added to the reactor along the oxygen used to oxidize the lead-germanium film. Critical post-deposition annealing process are also described which optimize the ferroelectric properties of the PGO film. A multi-phase PGO film and capacitor structure including multi-phase PGO film of the present invention are provided by means of the invention.
摘要翻译：已经提供了用于沉积改进的PGO铁电体膜的MOCVD沉积工艺。包含Pb3GeO5的第二相以及Pb5Ge3O11的第一相为膜提供一些直接对应于改进的铁电特性的铁弹性质。第二相的包含调节到第一相晶粒尺寸并且促进晶粒的优选的c轴取向。第二相Pb3GeO5的程度是通过控制前体中的铅的量来调节的，并且沿着用于氧化铅 - 锗膜的氧加入到反应器中的另外的铅被调节。还描述了优化PGO膜的铁电性能的关键后沉积退火工艺。本发明提供了包括本发明多相PGO膜的多相PGO膜和电容器结构。

96. 发明授权

US06350699B1 Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistry 有权
标题翻译：使用非氯氟烃，氟基化学的各向异性等离子体蚀刻方法
公开(公告)号：US06350699B1
公开(公告)日：2002-02-26
申请号：US09584407
申请日：2000-05-30
申请人： Jer-shen Maa , Fengyan Zhang
发明人： Jer-shen Maa , Fengyan Zhang
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , C23F4/00
摘要： A method of anisotropically etching metals, especially iridium, platinum, ruthenium, osmium, and rhenium using a non-chlorofluorocarbon, fluorine-based chemistry. A substrate having metal deposited thereon, is inserted into an ECR plasma etch chamber and heated. A fluorine containing gas, such as, carbon tetrafluoride (CF4), nitrogen trifluoride (NF3) or sulfur hexafluoride (SF6) is introduced into the chamber and ionized to form a plasma. Fluorine ions within the plasma strike, or contact, the metal to form volatile metal-fluorine compounds. The metal-fluorine compounds are exhausted away from the substrate to reduce, or eliminate, redeposition of etch reactants.
摘要翻译：使用非氯氟烃氟基化学物质各向异性蚀刻金属，特别是铱，铂，钌，锇和铼的方法。将其上沉积有金属的衬底插入到ECR等离子体蚀刻室中并加热。将四氟化碳（CF 4），三氟化氮（NF 3）或六氟化硫（SF 6）等含氟气体引入室内并离子化形成等离子体。等离子体内的氟离子冲击，或接触金属，形成挥发性金属氟化合物。金属 - 氟化合物从衬底排出，以减少或消除蚀刻反应物的再沉积。

97. 发明授权

US09371226B2 Methods for forming particles 有权
标题翻译：形成颗粒的方法
公开(公告)号：US09371226B2
公开(公告)日：2016-06-21
申请号：US13019879
申请日：2011-02-02
申请人： Robert V. Fox , Fengyan Zhang , Rene G. Rodriguez , Joshua J. Pak , Chivin Sun
发明人： Robert V. Fox , Fengyan Zhang , Rene G. Rodriguez , Joshua J. Pak , Chivin Sun
IPC分类号： H01L31/02 , H01L31/18 , C01B17/00 , B82Y30/00 , C01G15/00 , H01L31/032 , H01L31/0392 , H01L31/0749
CPC分类号： B82Y30/00 , C01G15/006 , C01P2002/72 , C01P2002/84 , C01P2004/62 , C01P2004/64 , C01P2006/40 , H01L31/0322 , H01L31/03923 , H01L31/0749 , Y02E10/541
摘要： Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.
摘要翻译：将单源前体或单源前体的预共聚物进行微波辐射以形成I-III-VI2材料的颗粒。这样的颗粒可以以纤锌矿相形成，并且可以通过例如暴露于热而转变成黄铜矿相。纤锌矿相中的颗粒可以具有基本上六边形的形状，其能够堆叠成有序层。纤锌矿相中的颗粒可以与黄铜矿相中的颗粒（即，黄铜矿纳米颗粒）混合，其可以填充纤锌矿相中颗粒的有序层内的空隙，从而产生具有良好覆盖率的膜。在一些实施例中，所述方法用于形成包含I-III-VI2材料的半导体材料层。可以使用这样的方法来制造诸如薄膜太阳能电池的装置。

98. 发明申请

US20070167008A1 Nanotip electrode non-volatile memory resistor cell 审中-公开
标题翻译：纳米电极非易失性存储电阻单元
公开(公告)号：US20070167008A1
公开(公告)日：2007-07-19
申请号：US11717818
申请日：2007-03-14
申请人： Sheng Hsu , Fengyan Zhang , Gregory Stecker , Robert Barrowcliff
发明人： Sheng Hsu , Fengyan Zhang , Gregory Stecker , Robert Barrowcliff
IPC分类号： H01L21/44
CPC分类号： H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/147 , H01L45/16 , H01L45/1675
摘要： A non-volatile memory resistor cell with a nanotip electrode, and corresponding fabrication method are provided. The method comprises: forming a first electrode with nanotips; forming a memory resistor material adjacent the nanotips; and, forming a second electrode adjacent the memory resistor material, where the memory resistor material is interposed between the first and second electrodes. Typically, the nanotips are iridium oxide (IrOx) and have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. In one aspect, the substrate material can be silicon, silicon oxide, silicon nitride, or a noble metal. A metalorganic chemical vapor deposition (MOCVD) process is used to deposit Ir. The IrOx nanotips are grown from the deposited Ir.
摘要翻译：提供了具有纳米尖端电极的非易失性存储器电阻单元及相应的制造方法。该方法包括：形成具有纳米尖端的第一电极; 在所述纳米尖端附近形成记忆电阻材料; 并且形成与所述存储电阻材料相邻的第二电极，其中所述存储电阻材料置于所述第一和第二电极之间。通常，纳米针是氧化铱（IrOx），并且具有约50纳米或更小的尖端基底尺寸，在5至50nm范围内的尖端高度，以及每平方微米大于100纳米尖端的纳米密度密度。一方面，衬底材料可以是硅，氧化硅，氮化硅或贵金属。使用金属有机化学气相沉积（MOCVD）工艺沉积Ir。 IrOx纳米尖端从沉积的Ir生长。

99. 发明申请

US20070111368A1 Photovoltaic structure with a conductive nanowire array electrode 失效
标题翻译：具有导电纳米线阵列电极的光伏结构
公开(公告)号：US20070111368A1
公开(公告)日：2007-05-17
申请号：US11280423
申请日：2005-11-16
申请人： Fengyan Zhang , Robert Barrowcliff , Sheng Hsu
发明人： Fengyan Zhang , Robert Barrowcliff , Sheng Hsu
IPC分类号： H01L51/40 , H01L21/00
CPC分类号： H01L51/4213 , B82Y10/00 , H01L51/0046 , H01L51/0048 , H01L51/4226 , H01L51/4233 , H01L51/441 , Y02E10/52 , Y02E10/549
摘要： A photovoltaic (PV) structure is provided, along with a method for forming a PV structure with a conductive nanowire array electrode. The method comprises: forming a bottom electrode with conductive nanowires; forming a first semiconductor layer of a first dopant type (i.e., n-type) overlying the nanowires; forming a second semiconductor layer of a second dopant type, opposite of the first dopant type (i.e., p-type), overlying the first semiconductor layer; and, forming a top electrode overlying the second semiconductor layer. The first and second semiconductor layers can be a material such as a conductive polymer, a conjugated polymer with a fullerene derivative, and inorganic materials such as CdSe, CdS, Titania, or ZnO. The conductive nanowires can be a material such as IrO2, In2O3, SnO2, or indium tin oxide (ITO).
摘要翻译：提供光伏（PV）结构以及用于形成具有导电纳米线阵列电极的PV结构的方法。该方法包括：形成具有导电纳米线的底电极; 形成覆盖在纳米线上的第一掺杂剂型（即n型）的第一半导体层; 形成与所述第一掺杂剂类型（即，p型）相反的第二掺杂剂类型的第二半导体层，所述第二掺杂剂类型覆盖所述第一半导体层; 以及形成覆盖所述第二半导体层的顶部电极。第一和第二半导体层可以是诸如导电聚合物，具有富勒烯衍生物的共轭聚合物和诸如CdSe，CdS，二氧化钛或ZnO的无机材料的材料。导电纳米线可以是诸如IrO 2，In 2 O 3，SnO 2，或铟的材料氧化锡（ITO）。

100. 发明申请

US20060180817A1 Silicon phosphor electroluminescence device with nanotip electrode 有权
标题翻译：具有纳米尖电极的硅荧光体电致发光器件
公开(公告)号：US20060180817A1
公开(公告)日：2006-08-17
申请号：US11061946
申请日：2005-02-17
申请人： Sheng Hsu , Fengyan Zhang , Gregory Stecker , Robert Barrowcliff
发明人： Sheng Hsu , Fengyan Zhang , Gregory Stecker , Robert Barrowcliff
IPC分类号： H01L27/15
CPC分类号： H05B33/145
摘要： An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
摘要翻译：提供了一种电致发光（EL）器件和用于制造具有纳米尖端电极的所述器件的方法。该方法包括：形成具有纳米尖端的底部电极; 在所述纳米尖端附近形成Si磷光体层; 并形成透明的顶部电极。 Si荧光体层介于底部和顶部电极之间。纳米尖端可以具有约50纳米或更小的尖端基部尺寸，5至50nm范围内的尖端高度，以及每平方毫米大于100纳米尖端的纳米密度密度。通常，纳米尖端由氧化铱（IrOx）纳米尖端形成。 MOCVD工艺形成Ir底部电极。 IrOx纳米尖嘴从Ir生长。在一个方面，Si磷光体层是SRSO层。响应于SRSO退火步骤，形成具有1至10nm范围内的尺寸的纳米晶体的纳米晶SRSO。

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