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    • 92. 发明申请
    • Method and apparatus for detecting probe position error in a data storage system and method and apparatus for tracking data
    • 用于检测数据存储系统中的探针位置误差的方法和装置以及用于跟踪数据的方法和装置
    • US20050270920A1
    • 2005-12-08
    • US11143478
    • 2005-06-03
    • Dong-ki MinSeung-bum Hong
    • Dong-ki MinSeung-bum Hong
    • G11B9/14G11B7/00G11B9/00
    • G11B9/1454B82Y10/00
    • An apparatus for detecting a probe position error includes a position error extracting unit extracting probe position errors from signals detected by a probe; a position error adding unit calculating the probe position errors in units of a predetermined time; and a signal processing unit storing a past probe position error calculated by the position error extracting unit and generating a probe position error by processing the past probe position error and a current probe position error. An apparatus for tracking data includes a scanner moving a data storage medium; a probe detecting the signals from a data storage medium; an error detector detecting probe position errors in a half-period of an error extracting signal by applying the error extracting signal used to extract the probe position errors to the signal detected by the probe; and a compensator compensating for the probe position errors detected by the error detector.
    • 用于检测探头位置误差的装置包括位置误差提取单元,从由探针检测的信号中提取探针位置误差; 位置误差添加单元,以预定时间为单位计算探测位置误差; 以及信号处理单元,存储由位置误差提取单元计算出的过去的探针位置误差,并通过处理过去的探针位置误差和当前探针位置误差来产生探针位置误差。 一种用于跟踪数据的装置包括扫描仪移动数据存储介质; 检测来自数据存储介质的信号的探针; 误差检测器通过将用于提取探针位置误差的误差提取信号应用于由探针检测的信号,检测误差提取信号的半周期中的探测器位置误差; 以及补偿器,用于补偿由误差检测器检测到的探头位置误差。
    • 99. 发明授权
    • Method of fabricating electric field sensor having electric field shield
    • 制造具有电场屏蔽的电场传感器的方法
    • US07759153B2
    • 2010-07-20
    • US11872065
    • 2007-10-15
    • Chul-min ParkHyoung-soo KoSeung-bum Hong
    • Chul-min ParkHyoung-soo KoSeung-bum Hong
    • H01L21/00H01L21/84H01L21/331H01L21/8222
    • G01Q60/30
    • A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.
    • 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头,以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模,使形成在电阻区域上的电介质层通过金属层曝光。