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91. 发明申请

US20060097311A1 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US20060097311A1
公开(公告)日：2006-05-11
申请号：US11311162
申请日：2005-12-20
申请人： Tomoyuki Ishii , Kazunori Furusawa , Hideaki Kurata , Yoshihiro Ikeda
发明人： Tomoyuki Ishii , Kazunori Furusawa , Hideaki Kurata , Yoshihiro Ikeda
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , B82Y10/00 , G11C11/5621 , G11C16/0458 , G11C2211/5612 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/7887
摘要： Flash memory is rapidly decreasing in price. There is a demand for a new memory system that permits size reduction and suits multiple-value memory. A flash memory of AND type suitable for multiple-value memory with multiple-level threshold values can be made small in area if the inversion layer is utilized as the wiring; however, it suffers the disadvantage of greatly varying in writing characteristics from cell to cell. Another promising method of realizing multiple-value memory is to change the storage locations. This method, however, poses a problem with disturbance at the time of operation. The present invention provides one way to realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics. The semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to the source and drain regions without overlapping, so that it uses, at the time of writing, the assist electrode as the assist electrode for hot electrons to be injected at the source side and it uses, at the time of reading, the inversion layer formed under the assist electrode as the source region or the drain region.
摘要翻译：闪存正在迅速降价。需要一种允许大小缩小并适合多值内存的新内存系统。如果使用反转层作为布线，则可以使适用于具有多级阈值的多值存储器的AND型闪速存储器的面积小; 然而，它具有从细胞到细胞的书写特征大大变化的缺点。实现多值存储器的另一个有希望的方法是改变存储位置。然而，这种方法在操作时存在干扰问题。本发明提供了实现具有减小的写入特性的单元到单元变化的半导体存储器件的一种方式。半导体存储器具有彼此平行形成的源极区域和漏极区域以及辅助电极，其在源极和漏极区域之间并且平行于其而不重叠，从而在写入时使用辅助电极辅助电极作为用于在源极侧注入的热电子的辅助电极，并且在读取时使用形成在辅助电极下方的反型层作为源极区域或漏极区域。

92. 发明授权

US07015540B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07015540B2
公开(公告)日：2006-03-21
申请号：US10684424
申请日：2003-10-15
申请人： Tomoyuki Ishii , Kazunori Furusawa , Hideaki Kurata , Yoshihiro Ikeda
发明人： Tomoyuki Ishii , Kazunori Furusawa , Hideaki Kurata , Yoshihiro Ikeda
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , B82Y10/00 , G11C11/5621 , G11C16/0458 , G11C2211/5612 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/7887
摘要： To realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics a semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to the source and drain regions without overlapping, so that at the time of writing, the assist electrode is used as an assist electrode for hot electrons to be injected at the source side and at the time of reading, an inversion layer formed under the assist electrode is used as the source region or the drain region.
摘要翻译：为了实现具有减小的写入特性的单元到单元变化的半导体存储器件，半导体存储器具有彼此平行形成的源极区域和漏极区域以及在源极之间并平行的辅助电极，漏极区域不重叠，使得在写入时辅助电极用作在源极侧注入的热电子的辅助电极，并且在读取时，将形成在辅助电极下方的反转层用作源极区或漏极区。

93. 发明申请

US20060012833A1 Image scanning apparatus 审中-公开
标题翻译：图像扫描装置
公开(公告)号：US20060012833A1
公开(公告)日：2006-01-19
申请号：US11042895
申请日：2005-01-25
申请人： Shuichi Ito , Tomoyuki Ishii
发明人： Shuichi Ito , Tomoyuki Ishii
IPC分类号： H04N1/00
CPC分类号： H04N1/00681 , H04N1/00209 , H04N1/00708 , H04N1/00771 , H04N1/00782 , H04N2201/0065
摘要： An image scanning apparatus includes a reader which reads an original document in accordance with a first reading condition and generates a first image data corresponding to the original document, a processor which calculates a first calculated value relating to a first attribution of the first image data and a second supposed value based on a second reading condition different from the first reading condition and one of the first image data and the first calculated value, wherein the second supposed value relates to a second attribution, and the second attribution relates to a second image data which are generated in case the original document, is read in accordance with the second reading condition, and a display which displays the first calculated value and the second supposed value.
摘要翻译：一种图像扫描装置，包括：读取器，根据第一读取条件读取原始文件，并生成对应于原始文档的第一图像数据;处理器，其计算与第一图像数据的第一归属有关的第一计算值;以及基于与第一读取条件和第一图像数据和第一计算值之一不同的第二读取条件的第二假定值，其中第二假定值涉及第二归因，并且第二归因涉及第二图像数据在根据第二读取条件读取原始文档的情况下生成的显示，以及显示第一计算值和第二假定值的显示。

94. 发明授权

US06965359B2 Method of driving plasma display panel by applying discharge sustaining pulses 失效
标题翻译：通过施加放电维持脉冲驱动等离子体显示面板的方法
公开(公告)号：US06965359B2
公开(公告)日：2005-11-15
申请号：US09966510
申请日：2001-09-28
申请人： Tomoyuki Ishii , Tadatsugu Hirose , Yoshikazu Kanazawa , Toshio Ueda , Tomokatsu Kishi , Shigetoshi Tomio , Fumitaka Asami
发明人： Tomoyuki Ishii , Tadatsugu Hirose , Yoshikazu Kanazawa , Toshio Ueda , Tomokatsu Kishi , Shigetoshi Tomio , Fumitaka Asami
IPC分类号： G09G3/20 , G09G3/292 , G09G3/293 , G09G3/294 , G09G3/296 , G09G3/298 , G09G3/299 , H01J17/49 , G09G3/28
CPC分类号： H01J11/28 , G09G3/2018 , G09G3/292 , G09G3/293 , G09G3/2932 , G09G3/294 , G09G3/2948 , G09G3/296 , G09G3/2983 , G09G3/299 , G09G2310/0205 , G09G2310/0218 , G09G2310/0221 , G09G2310/0224 , G09G2330/021 , H01J11/12 , H01J11/44 , H01J2211/444
摘要： Method for driving a plasma display panel. At least one first discharge sustaining pulse is applied to a first pair of display electrodes, and at least one second discharge sustaining pulse applied to an adjacent pair of display electrodes. The first and second discharge sustaining pulses are applied such that they are in the same phase as one another and/or such that a current in the first pair of display electrodes flows in the opposite direction from a current in the adjacent pair of display electrodes.
摘要翻译：驱动等离子体显示面板的方法至少一个第一放电维持脉冲被施加到第一对显示电极，并且至少一个第二放电维持脉冲施加到相邻的一对显示电极。施加第一和第二放电维持脉冲，使得它们彼此处于相同的相位和/或使得第一对显示电极中的电流与相邻的一对显示电极中的电流相反的方向流动。

95. 发明授权

US06949782B2 Semiconductor memories 失效
标题翻译：半导体存储器
公开(公告)号：US06949782B2
公开(公告)日：2005-09-27
申请号：US10790183
申请日：2004-03-02
申请人： Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
发明人： Bryan Atwood , Kazuo Yano , Tomoyuki Ishii , Taro Osabe , Kazumasa Yanagisawa , Takeshi Sakata
IPC分类号： G11C11/00 , G11C11/401 , G11C11/405 , G11C11/406 , G11C11/4076 , H01L21/8242 , H01L27/105 , H01L27/108 , H01L27/12
CPC分类号： H01L27/105 , G11C11/405 , G11C11/406 , G11C11/4076 , G11C2207/2281 , G11C2207/229 , H01L27/0207 , H01L27/108 , H01L27/1203
摘要： A high integration dynamic random access memory is provided by this invention. Furthermore, a write method is provided such that the cell size of two-and three-transistor gain cell memories is reduced. A dynamic memory incorporating a thin-channel transistor as the write element such that long data storage retention is achieved in the memory devices of this invention. A dynamic memory cell having low operating power and high density is also realized by this invention.
摘要翻译：本发明提供了高集成度的动态随机存取存储器。此外，提供了一种写入方法，使得减少了二晶体管和三晶体管增益单元存储器的单元尺寸。一种结合了作为写入元件的薄沟道晶体管的动态存储器，使得在本发明的存储器件中实现长的数据存储保持。通过本发明也实现了具有低操作功率和高密度的动态存储单元。

96. 发明申请

US20050056884A1 Semiconductor memory element, semiconductor device and control method thereof 有权
标题翻译：半导体存储元件，半导体器件及其控制方法
公开(公告)号：US20050056884A1
公开(公告)日：2005-03-17
申请号：US10957680
申请日：2004-10-05
申请人： Taro Osabe , Tomoyuki Ishii
发明人： Taro Osabe , Tomoyuki Ishii
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/336
CPC分类号： H01L29/42332 , G11C16/0408 , H01L21/28273 , H01L27/115 , H01L29/7885
摘要： In a semiconductor flash memory required to have high reliability, injection and extraction of electrons must be performed through an oxide film obtained by directly oxidizing a silicon substrate. Accordingly, the voltage to be used is a large voltage ranging from positive to negative one. In contrast, by storing charges in a plurality of dispersed regions, high reliability is achieved. Based on the high reliability, transfer of electrons is permitted through not only the oxide film obtained by directly thermally oxidizing a high reliability silicon substrate but also another oxide film deposited by CVD, or the like. In consequence, a device is controlled by electric potentials of the same polarity upon writing of data and upon erasing of data.
摘要翻译：在需要具有高可靠性的半导体闪速存储器中，必须通过直接氧化硅衬底获得的氧化膜进行电子注入和提取。因此，要使用的电压是从正极到负极的大电压。相反，通过在多个分散区域中存储电荷，实现了高可靠性。基于高可靠性，不仅可以通过直接热氧化高可靠性硅衬底而且通过CVD沉积的另一氧化膜等获得的氧化膜来允许电子的转移。因此，在写入数据和擦除数据时，器件由相同极性的电位控制。

97. 发明申请

US20050032276A1 Semiconductor element and process for manufacturing the same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20050032276A1
公开(公告)日：2005-02-10
申请号：US10936481
申请日：2004-09-09
申请人： Tomoyuki Ishii , Kazuo Yano , Koichi Seki , Toshiyuki Mine , Takashi Kobayashi
发明人： Tomoyuki Ishii , Kazuo Yano , Koichi Seki , Toshiyuki Mine , Takashi Kobayashi
IPC分类号： H01L27/115 , H01L27/12 , H01L29/68 , H01L29/788 , H01L21/00 , H01L21/82 , H01L21/8236
CPC分类号： H01L29/7887 , H01L27/115 , H01L27/1203 , H01L29/685 , H01L29/7883 , Y10S438/962
摘要： A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noises. In order to accomplish this a control electrode is formed so as to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile memory device can be realized with reduced size. A method of forming a memory element is also disclosed including performing the following steps of forming a first insulating layer, a second insulating layer, a first conductive layer and a layer of amorphous silicon. The amorphous silicon layer is crystallized to a polycrystalline silicon film. Semiconductor drains are deposited to form charge trapping and storage regions. A fourth insulating layer is deposited over the drains and a second conductive layer is deposited over a layer of silicon dioxide to form a control electrode of the memory element.
摘要翻译：公开了一种半导体量子存储器元件，其可以容易地在多个存储元件之间共享端子，并且可以通过高电流并且抵抗噪声。为了实现这一点，形成控制电极以覆盖连接低电阻区域的整个薄膜区域。因此，该元件可以具有小尺寸并且可以高密度地存储信息。因此，可以以减小的尺寸实现高度集成的低功耗非易失性存储器件。还公开了一种形成存储元件的方法，包括执行以下步骤：形成第一绝缘层，第二绝缘层，第一导电层和非晶硅层。非晶硅层结晶成多晶硅膜。沉积半导体漏极以形成电荷捕获和存储区域。在漏极上沉积第四绝缘层，并且在二氧化硅层上沉积第二导电层以形成存储元件的控制电极。

98. 发明申请

US20050023615A1 Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US20050023615A1
公开(公告)日：2005-02-03
申请号：US10929424
申请日：2004-08-31
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , G11C2216/06 , G11C2216/08 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L27/1203 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/785 , H01L29/7888
摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
摘要翻译：一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

99. 发明授权

US06587232B1 Image printing apparatus 失效
标题翻译：图像打印装置
公开(公告)号：US06587232B1
公开(公告)日：2003-07-01
申请号：US09319157
申请日：1999-05-28
申请人： Yuji Yamamoto , Tomoyuki Ishii
发明人： Yuji Yamamoto , Tomoyuki Ishii
IPC分类号： H04N104
CPC分类号： B41J2/465 , G03B27/50 , H04N1/121 , H04N1/193
摘要： Image printing apparatus including an exposure head for making a line-by-line exposure of a light-sensitive material, a positioning member facing the exposure head and having a projecting part situated on an optical axis of the exposure head on a side facing the exposure head, a first transfer path on an upstream side of the positioning member to transfer the material toward the positioning member, and a second transfer path on a downstream side of the positioning member to transfer the material downstream. The projecting part is located on a side closer to the exposure head than the intersection between an extension of the first transfer path and the optical axis and the intersection of an extension of the second transfer path and the optical axis. The positioning member has on its upstream side an inclined portion for guiding a forward end of the material transferred from the first transfer path onto the projecting part.
摘要翻译：图像打印设备包括用于使感光材料逐行曝光的曝光头，面向曝光头的定位构件，并且具有在面对曝光的一侧位于曝光头的光轴上的突出部分头部，位于定位构件的上游侧的第一传送路径，用于将材料转移到定位构件;以及位于定位构件的下游侧的第二传送路径，用于将材料转移到下游。突出部位于比第一传送路径的延伸部和光轴的交点以及第二传送路径的延伸线与光轴的交点更靠近曝光头的一侧。定位构件在其上游侧具有倾斜部分，用于将从第一传送路径传送的材料的前端引导到突出部分上。

100. 发明授权

US06373452B1 Plasma display panel, method of driving same and plasma display apparatus 失效
标题翻译：等离子体显示面板，驱动方法和等离子体显示装置
公开(公告)号：US06373452B1
公开(公告)日：2002-04-16
申请号：US08690038
申请日：1996-07-31
申请人： Tomoyuki Ishii , Tadatsugu Hirose , Yoshikazu Kanazawa , Toshio Ueda , Tomokatsu Kishi , Shigetoshi Tomio , Fumitaka Asami
发明人： Tomoyuki Ishii , Tadatsugu Hirose , Yoshikazu Kanazawa , Toshio Ueda , Tomokatsu Kishi , Shigetoshi Tomio , Fumitaka Asami
IPC分类号： G09G328
CPC分类号： H01J11/28 , G09G3/2018 , G09G3/292 , G09G3/293 , G09G3/2932 , G09G3/294 , G09G3/2948 , G09G3/296 , G09G3/2983 , G09G3/299 , G09G2310/0205 , G09G2310/0218 , G09G2310/0221 , G09G2310/0224 , G09G2330/021 , H01J11/12 , H01J11/44 , H01J2211/444
摘要： An electrode drive circuit performs interlaced scanning, ensuring that the phases of the sustaining pulse in odd-numbered lines and even-numbered lines among L1 to L8 between surface discharge electrodes are the reverse of each other. With this, when either odd-numbered lines or even-numbered lines are displayed, the voltages applied between the electrodes of the undisplayed lines are at 0, eliminating the necessity for partitioning walls on the surface discharge electrodes. In surface discharge electrodes, X electrodes are provided on the two sides of a Y electrode and the area between the Y electrode and the X electrode on one side is assigned a display line at an odd-numbered frame, and the area between the Y electrode and the X electrode on the other side is assigned a display line in an even-numbered frame. Alternate areas between the surface discharge electrodes are assigned as blind lines and a discharge light emission in the blind lines is blocked or incident light to the blind lines from the outside is absorbed. Address electrodes are provided for each monochromatic pixel column and selectively connected with the pads above them, performing simultaneous selection of lines.
摘要翻译：电极驱动电路进行隔行扫描，确保表面放电电极之间的L1〜L8中的奇数行和偶数行中的维持脉冲的相位彼此相反。这样，当显示奇数行或偶数行时，施加在未显示行的电极之间的电压为0，消除了在表面放电电极上分隔壁的必要性。在表面放电电极中，X电极设置在Y电极的两侧，并且一侧的Y电极和X电极之间的区域被指定为奇数帧的显示线，并且Y电极并且在另一侧的X电极被分配有偶数帧中的显示行。表面放电电极之间的交替区域被分配为盲线，并且盲线中的放电发光被阻挡，或者从外部吸收到盲线的入射光。为每个单色像素列提供地址电极，并选择性地与其上的焊盘连接，执行行的同时选择。

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