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    • 95. 发明申请
    • Area image sensor
    • 区域图像传感器
    • US20060164529A1
    • 2006-07-27
    • US10533925
    • 2003-11-06
    • Makoto Shimizu
    • Makoto Shimizu
    • H04N5/335
    • H04N5/378H04N5/2176H04N5/37452
    • The present invention provides a CMOS area image sensor that makes it possible to prevent or reduce at least image quality degradation based on an inappropriate brightness distribution that is produced in the pickup image and image degradation based on image distortion that is produced in the pickup image to obtain a high-quality pickup image. A plurality of pixels arranged in a lattice shape on the imaging face of the CMOS area image sensor are constituted by a photodiode 10, a select transistor TRs for outputting accumulated electrical charge resulting from exposure from the photodiode 10, an electrical charge holding circuit comprising a capacitor C for temporarily holding the accumulated electrical charge from the photodiode 10 and a transfer transistor TRt for controlling the transfer of the accumulated electrical charge to the capacitor C; and a reset transistor TRr for discharging the residual electrical charge of the capacitor C. The level of an inappropriate photoelectric conversion signal of each pixel arising from a non-uniform transmissive light amount distribution to the imaging face of the imaging optical system as a result of the photoelectric conversion signal that is outputted by each pixel being multiplied by a vertical correction coefficient that is preset for each row and a horizontal correction coefficient that is preset for each column is corrected.
    • 本发明提供一种CMOS区域图像传感器,其可以基于在拾取图像中产生的不适当的亮度分布和基于在拾取图像中产生的图像失真的图像劣化来至少防止或减少图像质量劣化, 获得高质量的拍摄图像。 在CMOS区域图像传感器的成像面上排列成格子状的多个像素由光电二极管10,用于输出由光电二极管10曝光而产生的累积电荷的选择晶体管TRs构成,电荷保持电路包括: 用于临时保持来自光电二极管10的累积电荷的电容器C和用于控制累积电荷向电容器C传送的转移晶体管TRt; 以及用于对电容器C的剩余电荷进行放电的复位晶体管TRr。由于由成像光学系统的成像面的不均匀的透射光量分布引起的每个像素的不适当的光电转换信号的电平是由于 校正由各像素输出的光电转换信号乘以对于每行预设的垂直校正系数和为每列预设的水平校正系数。