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91. 发明授权

US06847084B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06847084B2
公开(公告)日：2005-01-25
申请号：US10631792
申请日：2003-08-01
申请人： Mizuki Ono , Akira Nishiyama
发明人： Mizuki Ono , Akira Nishiyama
IPC分类号： H01L21/28 , H01L21/8234 , H01L27/088 , H01L29/51 , H01L29/78 , H01L29/72
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/823456 , H01L21/823462 , H01L21/823475 , H01L21/823857 , H01L27/088 , H01L27/0922 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/785
摘要： A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first circuit including a first and a second field-effect transistor, the first drain region of the first transistor accompanying a first load capacitance, the second drain region of the second transistor accompanying a second load capacitance smaller than the first load capacitance, and the first gate insulation film of the first transistor having an average relative dielectric constant higher than that of the second gate insulation film of the second transistor, thereby realizing a high operation speed.
摘要翻译：半导体器件包括半导体衬底，形成在衬底上的第一电路和连接到第一电路的第二电路作为其输入/输出部分并由比第一电路的电压高的电压供电，第一电路包括第一和第二场效应晶体管，第一晶体管的第一漏极区域伴随着第一负载电容，第二晶体管的第二漏极区域伴随着比第一负载电容小的第二负载电容，第一栅绝缘膜所述第一晶体管的平均相对介电常数高于所述第二晶体管的所述第二栅极绝缘膜的相对介电常数，从而实现高的运行速度。

92. 发明授权

US06746909B2 Transistor, semiconductor device and manufacturing method of semiconductor device 失效
标题翻译：晶体管，半导体器件及半导体器件的制造方法
公开(公告)号：US06746909B2
公开(公告)日：2004-06-08
申请号：US10360815
申请日：2003-02-10
申请人： Akira Nishiyama
发明人： Akira Nishiyama
IPC分类号： H01I218238
CPC分类号： H01L21/76897 , H01L21/28562 , H01L21/823835 , H01L21/823842 , H01L29/045 , H01L29/47 , H01L29/665 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A semiconductor device having a low channel resistance without degrading transistor characteristics even for the 0.1 &mgr;m generation or later, and also: a manufacturing method of the device. The method includes fabricating source/drain electrodes and a gate electrode without using selective metal growth methods. Further, after forming the gate electrode, a semiconductor film is temporarily formed selectively in source/drain regions. A dielectric film is next deposited on the substrate and then, the surface is etched by chemical/mechanical polish (CMP) techniques to the extent that the semiconductor film is exposed on the surface. The semiconductor film is then partly etched until its midway portion along the thickness is removed. Thereafter, a desired metal or silicide is deposited on the entire surface. Next, CMP etching is performed to form electrodes, while letting the electrodes reside on or over the source/drain semiconductor layers and a gate insulation layer.
摘要翻译：具有低通道电阻而不降低晶体管特性的半导体器件，即使是0.1μm产生或更迟，以及该器件的制造方法。该方法包括在不使用选择性金属生长方法的情况下制造源/漏电极和栅电极。此外，在形成栅电极之后，半导体膜在源极/漏极区域中暂时选择性地形成。接着在衬底上沉积电介质膜，然后通过化学/机械抛光（CMP）技术对表面进行蚀刻，使得半导体膜暴露在表面上。然后半导体膜被部分蚀刻，直到其沿着厚度的中间部分被去除。此后，在整个表面上沉积所需的金属或硅化物。接下来，进行CMP蚀刻以形成电极，同时使电极驻留在源极/漏极半导体层上或栅极绝缘层上方。

93. 发明授权

US06690047B2 MIS transistor having a large driving current and method for producing the same 失效
标题翻译：具有大驱动电流的MIS晶体管及其制造方法
公开(公告)号：US06690047B2
公开(公告)日：2004-02-10
申请号：US10132175
申请日：2002-04-26
申请人： Yukihito Oowaki , Mizuki Ono , Mitsuhiro Noguchi , Daisaburo Takashima , Akira Nishiyama
发明人： Yukihito Oowaki , Mizuki Ono , Mitsuhiro Noguchi , Daisaburo Takashima , Akira Nishiyama
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66621 , H01L29/78
摘要： In a MIS transistor, the top surfaces of source/drain regions (S/D diffusion layers) formed on a semiconductor substrate 1 are arranged nearer to a gate electrode than a channel plane on the semiconductor substrate, and the top surfaces of the source/drain regions are arranged nearer than the channel plane than the interface between a gate insulator film provided on the upper side of the channel plane and the gate electrode. In this transistor, a groove is selectively formed in the surface of the semiconductor substrate, and a polycrystalline silicon deposited in the groove may be used as a mask to form impurity diffusion layers serving as source/drain regions to laminate and form a gate insulator film of a high dielectric film and a gate electrode. Alternatively, the polycrystalline silicon may be selectively formed to be used as a mask to elevate and form the impurity diffusion layer to laminate and form the gate insulator film and the gate electrode. Thus, it is possible to achieve both of the reduction of the resistance of the S/D diffusion layers and the reduction of the gate parasitic capacitance.
摘要翻译：在MIS晶体管中，形成在半导体基板1上的源极/漏极区域（S / D扩散层）的上表面布置成比半导体衬底上的沟道平面更靠近栅电极，源极/漏极区域的顶表面漏区比布置在沟道平面上侧的栅极绝缘膜与栅电极之间的界面更靠近沟道平面。在该晶体管中，在半导体衬底的表面中选择性地形成沟槽，并且可以将沉积在沟槽中的多晶硅用作掩模，以形成用作源极/漏极区域的杂质扩散层，以层压并形成栅极绝缘膜的高介电膜和栅电极。或者，可以选择性地形成多晶硅以用作掩模以升高和形成杂质扩散层以层压并形成栅极绝缘膜和栅电极。因此，可以实现S / D扩散层的电阻的降低和栅极寄生电容的降低。

94. 发明授权

US06548875B2 Sub-tenth micron misfet with source and drain layers formed over source and drains, sloping away from the gate 失效
标题翻译：次级十分之一误差，源极和漏极层形成在源极和漏极之间，远离栅极倾斜
公开(公告)号：US06548875B2
公开(公告)日：2003-04-15
申请号：US09798924
申请日：2001-03-06
申请人： Akira Nishiyama
发明人： Akira Nishiyama
IPC分类号： H01L2978
CPC分类号： H01L21/76897 , H01L21/28562 , H01L21/823835 , H01L21/823842 , H01L29/045 , H01L29/47 , H01L29/665 , H01L29/66545 , H01L29/66628 , H01L29/7834
摘要： A semiconductor device having a low channel resistance without degrading transistor characteristics even for the 0.1 &mgr;m generation or later, and also: a manufacturing method of the device. The method includes fabricating source/drain electrodes and a gate electrode without using selective metal growth methods. Further, after forming the gate electrode, a semiconductor film is temporarily formed selectively in source/drain regions. A dielectric film is next deposited on the substrate and then, the surface is etched by chemical/mechanical polish (CMP) techniques to the extent that the semiconductor film is exposed on the surface. The semiconductor film is then partly etched until its midway portion along the thickness is removed. Thereafter, a desired metal or silicide is deposited on the entire surface. Next, CMP etching is performed to form electrodes, while letting the electrodes reside on or over the source/drain semiconductor layers and a gate insulation layer.
摘要翻译：具有低通道电阻而不降低晶体管特性的半导体器件，即使是0.1μm产生或更迟，以及该器件的制造方法。该方法包括在不使用选择性金属生长方法的情况下制造源/漏电极和栅电极。此外，在形成栅电极之后，半导体膜在源极/漏极区域中暂时选择性地形成。接着在衬底上沉积电介质膜，然后通过化学/机械抛光（CMP）技术对表面进行蚀刻，使得半导体膜暴露在表面上。然后半导体膜被部分蚀刻，直到其沿着厚度的中间部分被去除。此后，在整个表面上沉积所需的金属或硅化物。接下来，进行CMP蚀刻以形成电极，同时使电极驻留在源极/漏极半导体层上或栅极绝缘层上方。

95. 发明授权

US06472544B1 Process for the preparation of optically active 2-[6-hydroxymethyl)-1,3-dioxan-4yl]acetic acid derivatives 有权
标题翻译：制备光学活性2-Ä6-（羟甲基）-1,3-二恶烷-4-基乙酸衍生物的方法
公开(公告)号：US06472544B1
公开(公告)日：2002-10-29
申请号：US09509998
申请日：2000-08-16
申请人： Noriyuki Kizaki , Yukio Yamada , Yoshihiko Yasohara , Akira Nishiyama , Makoto Miyazaki , Masaru Mitsuda , Takeshi Kondo , Noboru Ueyama , Kenji Inoue
发明人： Noriyuki Kizaki , Yukio Yamada , Yoshihiko Yasohara , Akira Nishiyama , Makoto Miyazaki , Masaru Mitsuda , Takeshi Kondo , Noboru Ueyama , Kenji Inoue
IPC分类号： C07D31906
CPC分类号： C07D319/06 , C07B2200/07 , C07C67/343 , C07C253/30 , C12P7/62 , C07C69/716 , C07C255/21
摘要： This invention provides a process for producing optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivatives, which are of value as intermediates of drugs, from inexpensive starting materials without using any special equipment such as that required for super-low temperature reactions. A process for producing optically active 2-[6-(hydroxymethyl)-1,3-dioxan-4-yl]acetic acid derivatives which comprises reacting an acetic acid derivative at a temperature of not less than −30° C. with an enolate prepared by permitting either a base or a metal having a valency of 0 to act on the derivative to produce a hydroxyoxohexanoic acid derivative, reducing this compound with the aid of a strain of microorganism to provide a halomethyldioxanylacetic acid derivative, treating this compound with an acetalizing agent in the presence of an acid catalyst to provide a halomethyldioxanylacetic acid derivative, reacted with an acyloxylating agent to provide a acyloxymethyldioxanylacetic acid derivative, and subjecting this compound to solvolysis in the presence of a base.
摘要翻译：本发明提供了从廉价起始原料生产具有价值作为药物中间体的光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物的方法，而不使用任何特殊设备例如超低温反应所需的方法。一种制备光学活性的2- [6-（羟甲基）-1,3-二恶烷-4-基]乙酸衍生物的方法，其包括在不是的温度下使乙酸衍生物反应小于-30℃，通过使碱金属或化合价为0的金属作用于衍生物以制备羟基氧代己酸衍生物而制备的烯醇化物，借助于微生物菌株还原该化合物以提供卤甲基二恶烷基乙酸衍生物，在酸催化剂存在下用缩醛化剂处理该化合物，得到卤代甲基二恶烷基乙酸衍生物，与酰氧基化剂反应，得到酰氧基甲基二恶烷基乙酸在碱的存在下，将该化合物施用于溶剂分解。

96. 发明授权

US06207486B1 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06207486B1
公开(公告)日：2001-03-27
申请号：US09151401
申请日：1998-09-11
申请人： Akira Nishiyama
发明人： Akira Nishiyama
IPC分类号： H01L218238
CPC分类号： H01L21/76823 , H01L21/28568 , H01L21/76843 , H01L21/76852 , H01L21/76855
摘要： An object of the present invention is to provide a semiconductor device manufacturing method capable of facilitating achievement of reliable electrical connections between an electrode and a wiring layer in different layers or between wiring layers therein. In accordance with one aspect of the present invention, a semiconductor device manufacturing method includes the steps of forming an element isolation region 51 on one main surface of a semiconductor substrate 50, forming a gate electrode 53, forming source and drain electrodes 56, forming an insulator nitride film 57 on the main surface of the semiconductor substrate 50, forming an interlayer insulator 58 with more than one contact hole H, converting part of the insulator nitride film 57 at the bottom of the contact hole H into a conductive nitride film 61 that is higher in bonding energy than the insulative nitride, and forming wiring layer 62 connected to the source/drain electrodes 56 through the conductive nitride film 61.
摘要翻译：本发明的一个目的是提供一种能够有助于实现电极和不同层之间或布线层之间的布线层之间的可靠电连接的半导体器件制造方法。根据本发明的一个方面，半导体器件制造方法包括以下步骤：在半导体衬底50的一个主表面上形成元件隔离区域51，形成栅电极53，形成源极和漏电极56，在半导体衬底的主表面上形成绝缘体氮化物膜57 如图50所示，形成具有多于一个接触孔H的层间绝缘体58，将接触孔H的底部的绝缘体氮化物膜57的一部分转换为与绝缘氮化物结合能力高的导电氮化物膜61，并形成通过导电氮化物膜61连接到源/漏电极56的布线层62。

97. 发明授权

US08401359B2 Video receiving apparatus and video receiving method 失效
标题翻译：视频接收装置和视频接收方法
公开(公告)号：US08401359B2
公开(公告)日：2013-03-19
申请号：US11890298
申请日：2007-08-03
申请人： Takuro Shoji , Akira Nishiyama
发明人： Takuro Shoji , Akira Nishiyama
IPC分类号： H04N5/765 , H04N7/12 , H04N9/80 , H04N17/00 , H04N7/00 , H04N7/16 , H03M7/00 , H04J3/06 , H04L12/28
CPC分类号： G09G5/006 , G09G2370/047 , H04N5/06 , H04N5/46 , H04N21/43632
摘要： A video receiving apparatus having an input terminal to receive pixel-based video data transmitted with pixel clock synchronized with the video data is provided. The video receiving apparatus may include a separation unit, an information acquisition unit, and a determination unit. The separation unit may be configured to separate auxiliary data added to the video data from the video data obtained at the input terminal. The information acquisition unit may be configured to acquire information on the number of horizontal pixels and the number of vertical pixels for the input video data from the auxiliary data separated at the separation unit. The determination unit may be configured to determine a type of the input video data based on the information on the number of horizontal pixels and the number of vertical pixels that is obtained at the information acquisition unit.
摘要翻译：提供具有输入端子以接收与视频数据同步的像素时钟发送的基于像素的视频数据的视频接收装置。视频接收装置可以包括分离单元，信息获取单元和确定单元。分离单元可以被配置为从在输入端获得的视频数据中分离添加到视频数据的辅助数据。信息获取单元可以被配置为从在分离单元处分离的辅助数据获取关于输入视频数据的水平像素数和垂直像素数的信息。确定单元可以被配置为基于关于在信息获取单元获得的水平像素的数量和垂直像素的数量的信息来确定输入视频数据的类型。

98. 发明申请

US20090326246A1 Method for Production of Optically Active 3-Amino-Nitrogenated Compound 失效
标题翻译：光学活性3-氨基氮化合物的制备方法
公开(公告)号：US20090326246A1
公开(公告)日：2009-12-31
申请号：US12375141
申请日：2007-07-23
申请人： Masatoshi Ohnuki , Masashi Izumida , Akira Nishiyama , Shingo Matsumoto
发明人： Masatoshi Ohnuki , Masashi Izumida , Akira Nishiyama , Shingo Matsumoto
IPC分类号： C07D207/04
CPC分类号： C07D207/14 , C07D207/10 , C07D207/12 , C07D207/27
摘要： Aiming at production of an optically active 3-amino nitrogen-containing compound which is useful as an intermediate in synthesis of medicines and pesticides, in particular, an optically active 1-protected-3-aminopyrrolidine derivative, from an inexpensive and readily available raw material by a process which is efficient and can be practiced industrially, an optically active 3-amino nitrogen-containing compound is produced by performing a reaction of an optically active 3-substituted nitrogen-containing compound with ammonia, methylamine, ethylamine or dimethylamine in the presence of water. In addition, a 1-protected-3-aminopyrrolidine derivative is produced by performing a reaction of an optically active 1-protected-3-(sulfonyloxy)pyrrolidine derivative with ammonia, methylamine, ethylamine, or dimethylamine in the presence of methanol, ethanol, n-propanol, or isopropanol under a pressure of less than 30 barr.
摘要翻译：本发明涉及一种光学活性3-氨基含氮化合物的制备，其可用作药物和农药合成中的中间体，特别是光学活性的1-保护的3-氨基吡咯烷衍生物，由廉价且容易获得的原料通过工业上有效且可以在工业上实践的方法，通过在存在下进行光学活性的3-取代的含氮化合物与氨，甲胺，乙胺或二甲胺的反应来制备光学活性的3-氨基含氮化合物的水。此外，通过在甲醇，乙醇，甲醇，乙醇等的存在下进行光学活性的1-保护的3-（磺酰氧基）吡咯烷衍生物与氨，甲胺，乙胺或二甲胺的反应来制备1-保护的3-氨基吡咯烷衍生物，正丙醇或异丙醇，压力小于30巴。

99. 发明授权

US07303965B2 MIS transistor and method for producing same 失效
标题翻译： MIS晶体管及其制造方法
公开(公告)号：US07303965B2
公开(公告)日：2007-12-04
申请号：US09879208
申请日：2001-06-13
申请人： Yukihito Oowaki , Mizuki Ono , Mitsuhiro Noguchi , Daisaburo Takashima , Akira Nishiyama
发明人： Yukihito Oowaki , Mizuki Ono , Mitsuhiro Noguchi , Daisaburo Takashima , Akira Nishiyama
IPC分类号： H01L21/33 , H01L21/3205 , H01L31/00
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66621 , H01L29/78
摘要： In a MIS transistor, the top surfaces of source/drain regions (S/D diffusion layers) formed on a semiconductor substrate 1 are arranged nearer to a gate electrode than a channel plane on the semiconductor substrate, and the top surfaces of the source/drain regions are arranged nearer than the channel plane than the interface between a gate insulator film provided on the upper side of the channel plane and the gate electrode. In this transistor, a groove is selectively formed in the surface of the semiconductor substrate, and a polycrystalline silicon deposited in the groove may be used as a mask to form impurity diffusion layers serving as source/drain regions to laminate and form a gate insulator film of a high dielectric film and a gate electrode. Alternatively, the polycrystalline silicon may be selectively formed to be used as a mask to elevate and form the impurity diffusion layer to laminate and form the gate insulator film and the gate electrode. Thus, it is possible to achieve both of the reduction of the resistance of the S/D diffusion layers and the reduction of the gate parasitic capacitance.
摘要翻译：在MIS晶体管中，形成在半导体基板1上的源极/漏极区域（S / D扩散层）的上表面布置成比半导体衬底上的沟道平面更靠近栅电极，源极/漏极区域的顶表面漏区比布置在沟道平面上侧的栅极绝缘膜与栅电极之间的界面更靠近沟道平面。在该晶体管中，在半导体衬底的表面中选择性地形成沟槽，并且可以将沉积在沟槽中的多晶硅用作掩模，以形成用作源极/漏极区域的杂质扩散层，以层压并形成栅极绝缘膜的高介电膜和栅电极。或者，可以选择性地形成多晶硅以用作掩模以升高和形成杂质扩散层以层压并形成栅极绝缘膜和栅电极。因此，可以实现S / D扩散层的电阻的降低和栅极寄生电容的降低。

100. 发明授权

US07223859B2 Method for producing (R)-3-[4-(trifluoromethyl) phenylamino]-pentanoic acid amide derivative 失效
标题翻译：（R）-3- [4-（三氟甲基）苯基氨基] - 戊酸酰胺衍生物的制备方法
公开(公告)号：US07223859B2
公开(公告)日：2007-05-29
申请号：US10801141
申请日：2004-03-16
申请人： Tatsuyoshi Tanaka , Masanobu Sugawara , Hirofumi Maeda , Akira Nishiyama , Yoshihiko Yasohara , Nobuo Nagashima
发明人： Tatsuyoshi Tanaka , Masanobu Sugawara , Hirofumi Maeda , Akira Nishiyama , Yoshihiko Yasohara , Nobuo Nagashima
IPC分类号： C07D205/02 , C07C233/00
CPC分类号： C07D205/08 , C07C231/02 , C07C309/66 , C07C309/73
摘要： The present invention provides a method for easily producing an (R)-3-[4-(trifluoromethyl)phenylamino]-pentanoic acid amide derivative useful for an intermediate for pharmaceutical products, particularly an inhibitor of a cholesteryl ester transfer protein (CETP) from easily available raw materials. In the present invention, (S)-N-[4-(trifluoromethyl)phenyl]-3-hydroxypentanoic acid amide prepared from easily available raw materials leads a production of (R)-4-ethyl-1-[4-(trifluoromethyl)phenyl]-2-azetidinone to give (R)-3-[4-(trifluoromethyl)phenylamino]-pentanoic acid amide. Furthermore, (R)-4-ethyl-1-[4-(trifluoromethyl)phenyl]-2-azetidinone is reacted with a carbamic acid ester to give an (R)-3-[4-(trifluoromethyl)phenylamino]-pentanoic acid amide derivative.
摘要翻译：本发明提供了一种容易地制备用于药物产品中间体（特别是胆固醇酯转移蛋白（CETP）抑制剂）的（R）-3- [4-（三氟甲基）苯基氨基] - 戊酸酰胺衍生物的方法，容易获得的原料。在本发明中，由容易获得的原料制备的（S）-N- [4-（三氟甲基）苯基] -3-羟基戊酸酰胺导致（R）-4-乙基-1- [4-（三氟甲基））苯基] -2-氮杂环丁酮，得到（R）-3- [4-（三氟甲基）苯基氨基] - 戊酸酰胺。此外，将（R）-4-乙基-1- [4-（三氟甲基）苯基] -2-氮杂环丁酮与氨基甲酸酯反应，得到（R）-3- [4-（三氟甲基）苯基氨基] - 戊酸酰胺衍生物。

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