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91. 发明授权

US06798404B2 Integrated digitizing tablet and display apparatus and method of operation 有权
标题翻译：集成数字化平板电脑和显示设备及操作方法
公开(公告)号：US06798404B2
公开(公告)日：2004-09-28
申请号：US10038466
申请日：2002-01-02
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G09G500
CPC分类号： G06F3/0412 , G06F3/046
摘要： An integrated digitizing tablet and display apparatus is disclosed. The digitizing tablet portion of the apparatus is comprised of an array of magnetic random access memory (MRAM) cells, wherein each MRAM cell is responsive to an externally applied magnetic field. Each memory cell has a magnetic bit that changes orientation upon application of an externally applied magnetic field to produce an electrical signal based on the orientation of the bit when a second electric field is applied across the array. The display is comprised of an array of pixel cells and each pixel cell is coupled to one of the MRAM cells. The MRAM cell activates the pixel cell by the electrical signal produced by the MRAM cell. Thus, what is achieved is an integrated digitizing tablet and display that has digitizing cells that directly control the display cells without the need for additional processors.
摘要翻译：公开了一种集成的数字化图形输入板和显示装置。该装置的数字化图形输入部分由磁性随机存取存储器（MRAM）单元阵列组成，其中每个MRAM单元响应外部施加的磁场。每个存储器单元具有磁性位，当应用外部施加的磁场时，当在阵列上施加第二电场时，基于位的取向产生电信号，从而改变取向。显示器由像素单元的阵列组成，并且每个像素单元耦合到MRAM单元之一。 MRAM单元通过由MRAM单元产生的电信号激活像素单元。因此，实现的是集成的数字化平板电脑和显示器，其具有直接控制显示单元的数字化单元，而不需要额外的处理器。

92. 发明授权

US06794697B1 Asymmetric patterned magnetic memory 有权
标题翻译：非对称图案磁记忆体
公开(公告)号：US06794697B1
公开(公告)日：2004-09-21
申请号：US10677394
申请日：2003-10-01
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： H01L2976
CPC分类号： H01L27/222 , B82Y25/00 , H01F10/06 , H01F10/324 , H01F10/3254 , H01L43/08
摘要： This invention provides an asymmetrically patterned magnetic memory storage device. In a particular embodiment at least one magnetic memory cell is provided. Each magnetic memory cell provides at least one ferromagnetic data layer of a first size, the data layer characterized by an alterable orientation of magnetization, an intermediate layer in contact with the data layer and at least one ferromagnetic reference layer of a second size, the reference layer characterized by a reference magnetic field. The reference layer is in contact with the intermediate layer, opposite from and asymmetric to the data layer. The magnetic memory cell is characterized as having only one-end involvement. More specifically, the asymmetric alignment provides that only one set of magnetic poles are in substantial vertical alignment, and as such subject to the strong influence of one another.
摘要翻译：本发明提供一种不对称图案化的磁存储器存储装置。在特定实施例中，提供了至少一个磁存储单元。每个磁存储单元提供至少一个第一大小的铁磁数据层，该数据层的特征在于磁化方向的可变方向，与该数据层接触的中间层和至少一个第二尺寸的铁磁参考层，该参考其特征在于参考磁场。参考层与数据层相反并且与数据层不对称的中间层接触。磁记忆单元的特征在于仅具有一端参与。更具体地，不对称对准提供了仅一组磁极处于基本垂直对准，并且因此受到彼此的强烈影响。

93. 发明授权

US06756239B1 Method for constructing a magneto-resistive element 有权
标题翻译：用于构造磁阻元件的方法
公开(公告)号：US06756239B1
公开(公告)日：2004-06-29
申请号：US10414325
申请日：2003-04-15
申请人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
发明人： Janice H. Nickel , Thomas Anthony , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译：构造了一个磁阻元件。铁磁感应层沉积在表面上。铁磁感应层被图案化。进行蚀刻以准备沉积介电层。介电层沉积在感应层上。在电介质层上沉积铁磁钉扎层。

94. 发明授权

US06740948B2 Magnetic shielding for reducing magnetic interference 有权
公开(公告)号：US06740948B2
公开(公告)日：2004-05-25
申请号：US10233110
申请日：2002-08-30
申请人： Manish Sharma , Manoj Bhattacharyya
发明人： Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2982
CPC分类号： H01L27/222
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.

95. 发明授权

US06738543B1 Hitless tunable wavelength filters 失效
标题翻译：无心可调波长滤波器
公开(公告)号：US06738543B1
公开(公告)日：2004-05-18
申请号：US10160383
申请日：2002-05-30
申请人： Karl W. Beeson , Lawrence W. Shacklette , Manish Sharma , Han Zou
发明人： Karl W. Beeson , Lawrence W. Shacklette , Manish Sharma , Han Zou
IPC分类号： G02B626
CPC分类号： H04Q11/0005 , G02F1/0147 , G02F2201/307 , G02F2203/585 , H04J14/02 , H04J14/0204 , H04J14/0206 , H04J14/021 , H04Q2011/0009
摘要： A hitless wavelength selective optical device includes a first thermo-optic switch (TOS), a second TOS, a first waveguide, a second waveguide, a third waveguide, a heating element and a control unit. The first TOS includes receives a wavelength division multiplexed (WDM) signal at a first port of the first TOS. The second TOS provides at least one channel of the WDM signal at a first port of the second TOS. The first waveguide is coupled between second ports of the first and second TOS. The second waveguide includes a tunable filter that reflects a selected channel from the received WDM signal and coupled between the third ports of the first and second TOS.
摘要翻译：无击穿波长选择光学器件包括第一热电开关（TOS），第二TOS，第一波导，第二波导，第三波导，加热元件和控制单元。第一TOS包括在第一TOS的第一端口处接收波分复用（WDM）信号。第二TOS在第二TOS的第一端口处提供WDM信号的至少一个信道。第一波导耦合在第一和第二TOS的第二端口之间。第二波导包括可调谐滤波器，其从所接收的WDM信号反射所选择的信道并耦合在第一和第二TOS的第三端口之间。

96. 发明授权

US06693825B1 Magneto-resistive device including clad conductor 有权
标题翻译：包括包层导体的磁阻装置
公开(公告)号：US06693825B1
公开(公告)日：2004-02-17
申请号：US10349685
申请日：2003-01-23
申请人： Manish Sharma , Thomas C. Anthony , Lung T. Tran
发明人： Manish Sharma , Thomas C. Anthony , Lung T. Tran
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C11/5607 , G11C2213/71
摘要： A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.
摘要翻译：存储单元包括用铁磁材料包覆的导体; 在包层导体的相对侧上的第一和第二间隔层; 第一间隔层上的第一数据层; 以及第二间隔层上的第二数据层。

97. 发明授权

US06667901B1 Dual-junction magnetic memory device and read method 有权
标题翻译：双结磁存储器件及读取方式
公开(公告)号：US06667901B1
公开(公告)日：2003-12-23
申请号：US10426381
申请日：2003-04-29
申请人： Frederick A. Perner , Manish Sharma , Manoj Bhattacharyya
发明人： Frederick A. Perner , Manish Sharma , Manoj Bhattacharyya
IPC分类号： G11C1115
CPC分类号： G11C11/1673 , G11C11/161
摘要： A magnetic memory device includes a first magnetic tunnel junction having a first reference ferromagnetic layer; a second magnetic tunnel junction having a second reference ferromagnetic layer; and an electrically conductive spacer layer between the first and second reference layers. The first and second reference layers are antiferromagnetically coupled.
摘要翻译：磁存储器件包括具有第一参考铁磁层的第一磁性隧道结; 具有第二参考铁磁层的第二磁性隧道结; 以及在第一和第二参考层之间的导电间隔层。第一和第二参考层是反铁磁耦合的。

98. 发明授权

US06539352B1 Subword-based speaker verification with multiple-classifier score fusion weight and threshold adaptation 失效
标题翻译：基于子词的说话人验证与多分类器得分融合权重和阈值适应
公开(公告)号：US06539352B1
公开(公告)日：2003-03-25
申请号：US08976280
申请日：1997-11-21
申请人： Manish Sharma , Xiaoyu Zhang , Richard J. Mammone
发明人： Manish Sharma , Xiaoyu Zhang , Richard J. Mammone
IPC分类号： G10L1700
CPC分类号： G10L17/10 , G10L15/04 , G10L15/07 , G10L15/10 , G10L15/16 , G10L15/1815 , G10L17/04
摘要： The voice print system of the present invention is a subword-based, text-dependent automatic speaker verification system that embodies the capability of user-selectable passwords with no constraints on the choice of vocabulary words or the language. Automatic blind speech segmentation allows speech to be segmented into subword units without any linguistic knowledge of the password. Subword modeling is performed using a multiple classifiers. The system also takes advantage of such concepts as multiple classifier fusion and data resampling to successfully boost the performance. Key word/key phrase spotting is used to optimally locate the password phrase. Numerous adaptation techniques increase the flexibility of the base system, and include: channel adaptation, fusion adaptation, model adaptation and threshold adaptation.
摘要翻译：本发明的语音打印系统是一种基于词语的文本相关的自动说话人验证系统，其体现了用户可选择密码的能力，对词汇词或语言的选择没有限制。自动盲语分割允许语音被分割成子词单元，而没有密码的任何语言知识。使用多个分类器执行子字建模。该系统还利用了诸如多分类器融合和数据重采样这样的概念来成功提高性能。关键词/关键短语发现用于最佳地定位密码短语。许多适应技术增加了基本系统的灵活性，包括：信道适应，融合适应，模型适应和阈值适配。

99. 发明授权

US06507513B1 Using delayed electrical pulses with magneto-resistive devices 有权
标题翻译：使用具有磁阻器件的延迟电脉冲
公开(公告)号：US06507513B1
公开(公告)日：2003-01-14
申请号：US10176179
申请日：2002-06-20
申请人： Manish Sharma , Manoj Bhattacharyya , Lung The Tran
发明人： Manish Sharma , Manoj Bhattacharyya , Lung The Tran
IPC分类号： G11C1114
CPC分类号： G11C11/15
摘要： A device having a magneto-resistive element, a first conductor proximate to the magneto-resistive element, and a second conductor proximate to the magneto-resistive element. The magneto-resistive element is exposed to a magnetic field generated by a first electrical pulse carried by the first conductor. The magneto-resistive element is also exposed to a magnetic field generated by a second electrical pulse carried by the second conductor. The second electrical pulse is delayed relative to the first electrical pulse.
摘要翻译：具有磁阻元件，靠近磁阻元件的第一导体和靠近磁阻元件的第二导体的器件。磁阻元件暴露于由第一导体承载的第一电脉冲产生的磁场。磁阻元件也暴露于由第二导体承载的第二电脉冲产生的磁场。第二电脉冲相对于第一电脉冲被延迟。

100. 发明授权

US06483734B1 Memory device having memory cells capable of four states 有权
标题翻译：具有能够具有四种状态的存储单元的存储器件
公开(公告)号：US06483734B1
公开(公告)日：2002-11-19
申请号：US09992426
申请日：2001-11-26
申请人： Manish Sharma , Lung T. Tran
发明人： Manish Sharma , Lung T. Tran
IPC分类号： G11C1702
CPC分类号： H01L27/224 , G11C11/005 , G11C11/16 , G11C11/56 , G11C11/5607 , G11C11/5671 , G11C17/16 , G11C2216/26
摘要： A memory device includes memory cells having a re-writeable element and a write-once element in series with the re-writeable element. The re-writeable element is programmable between a high resistance state and a low resistance state. The write-once element can be an anti-fuse element that is programmable from a high resistance state to a low resistance state, or a fuse element that is programmable from a low resistance state to a high resistance state. The two possible states for the re-writeable element and the two possible states for the write-once element allow the memory cells to store four different bits.
摘要翻译：存储器件包括具有可重写元件和与可重写元件串联的一次写入元件的存储器单元。可重写元件可在高电阻状态和低电阻状态之间编程。一次写入元件可以是可从高电阻状态到低电阻状态的可编程熔丝元件，或可从低电阻状态到高电阻状态的可编程熔丝元件。可重写元件的两种可能状态和一次写入元件的两种可能状态允许存储单元存储四个不同的位。

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